Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators
Open accessAbstract
Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to software-based simulations owing to their poor reliability. Herein, we propose a self-rectifying memristor-based 1 kb CA as a hardware accelerator for NN computations. We conducted fully hardware-based single-layer NN classification tasks involving the Modified National Institute of Standards and Technology database using the developed passive CA, and achieved 100% classification accuracy for 1500 test sets. We also investigated the influences of the defect-tolerance capability of the CA, impact of the conductance range of the integrated memristors, and presence or absence of selection functionality in the integrated memristors on the image classification tasks. We offer valuable insights into the behavior and performance of CA devices under various conditions and provide evidence of the practicality of memristor-integrated passive CAs as hardware accelerators for NN applications.
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Non-Ohmic conduction is an inherent challenge in low-current devices.
“This is not a specific problem in our device but is an inherent challenge in low-current devices, where the conduction mechanism is non-Ohmic38,39.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [39]
The Results section (Electrical characteristics of the SRM-based 1 kb passive CA; page unavailable) says low-current memristors often show current drops at specific voltages, but attributes those drops to measurement-equipment resolution, not an inherent device characteristic. It does not identify non-Ohmic conduction as the cause or as an inherent challenge of low-current devices. (LLM, conf=0.78)
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Cites
MobileNetV2: Inverted Residuals and Linear Bottlenecks
Sandler, M., Howard, A., Zhu, M., Zhmoginov, A., & Chen, L.-C. (2018) · 2018 IEEE/CVF Conference on Computer Vision and Pattern Recognition · doi:10.1109/cvpr.2018.00474 · Cited by 28,755 · see citing works
State-of-the-art in artificial neural network applications: A survey
Abiodun, O. I., Jantan, A., Omolara, A. E., Dada, K. V., Mohamed, N. A., & Arshad, H. (2018) · Heliyon · doi:10.1016/j.heliyon.2018.e00938 · Cited by 3,109 · see citing works
Fully hardware-implemented memristor convolutional neural network
Yao, P., Wu, H., Gao, B., Tang, J., Zhang, Q., Zhang, W., Yang, J. J., & Qian, H. (2020) · Nature · doi:10.1038/s41586-020-1942-4 · Cited by 2,179 · see citing works
Optimizing FPGA-based Accelerator Design for Deep Convolutional Neural Networks
Zhang, C., Li, P., Sun, G., Guan, Y., Xiao, B., & Cong, J. (2015) · Proceedings of the 2015 ACM/SIGDA International Symposium on Field-Programmable Gate Arrays · doi:10.1145/2684746.2689060 · Cited by 2,158 · see citing works
McGaugh, J. L. (1966) · Science · doi:10.1126/science.153.3742.1351 · Cited by 1,468 · see citing works
Tian, Y., Pei, K., Jana, S., & Ray, B. (2018) · ACM/IEEE International Conference on Software Engineering: Companion Proceedings (ICSE-Companion) · doi:10.1145/3180155.3180220 · Cited by 1,400 · see citing works
Analogue signal and image processing with large memristor crossbars
Li, C., Hu, M., Li, Y., Jiang, H., Ge, N., Montgomery, E., Zhang, J., Song, W., Dávila, N., Graves, C. E., et al. (2017) · Nature Electronics · doi:10.1038/s41928-017-0002-z · Cited by 1,292 · see citing works
Going Deeper with Embedded FPGA Platform for Convolutional Neural Network
Qiu, J., Wang, J., Yao, S., Guo, K., Li, B., Zhou, E., Yu, J., Tang, T., Xu, N., Song, S., et al. (2016) · ACM/SIGDA International Symposium on Field-Programmable Gate Arrays (FPGA) · doi:10.1145/2847263.2847265 · Cited by 1,268 · see citing works
A Primer on Neural Network Models for Natural Language Processing
Goldberg, Y. (2016) · Journal of Artificial Intelligence Research · doi:10.1613/jair.4992 · Cited by 1,259 · see citing works
Quantized Convolutional Neural Networks for Mobile Devices
Wu, J., Leng, C., Wang, Y., Hu, Q., & Cheng, J. (2016) · IEEE Computer Society Conference on Computer Vision and Pattern Recognition/Proceedings - IEEE Computer Society Conference on Computer Vision and Pattern Recognition/Proceedings · doi:10.1109/cvpr.2016.521 · Cited by 1,244 · see citing works
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214 · see citing works
Fully memristive neural networks for pattern classification with unsupervised learning
Wang, Z., Joshi, S., Savel’ev, S., Song, W., Midya, R., Li, Y., Rao, M., Yan, P., Asapu, S., Zhuo, Y., et al. (2018) · Nature Electronics · doi:10.1038/s41928-018-0023-2 · Cited by 1,106 · see citing works
A compute-in-memory chip based on resistive random-access memory
Wan, W., Kubendran, R., Schaefer, C., Eryilmaz, S. B., Zhang, W., Wu, D., Deiss, S., Raina, P., Qian, H., Gao, B., et al. (2022) · Nature · doi:10.1038/s41586-022-04992-8 · Cited by 943 · see citing works
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
Li, C., Belkin, D., Li, Y., Yan, P., Hu, M., Ge, N., Jiang, H., Montgomery, E., Lin, P., Wang, Z., et al. (2018) · Nature Communications · doi:10.1038/s41467-018-04484-2 · Cited by 931 · see citing works
Memristor‐Based Analog Computation and Neural Network Classification with a Dot Product Engine
Hu, M., Graves, C. E., Li, C., Li, Y., Ge, N., Montgomery, E., Davila, N., Jiang, H., Williams, R. S., Yang, J. J., et al. (2018) · Advanced Materials · doi:10.1002/adma.201705914 · Cited by 751 · see citing works
A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations
Cai, F., Correll, J. M., Lee, S. H., Lim, Y., Bothra, V., Zhang, Z., Flynn, M. P., & Lu, W. D. (2019) · Nature Electronics · doi:10.1038/s41928-019-0270-x · Cited by 728 · see citing works
Structured Pruning of Deep Convolutional Neural Networks
Anwar, S., Hwang, K., & Sung, W. (2017) · ACM Journal on Emerging Technologies in Computing Systems · doi:10.1145/3005348 · Cited by 709 · see citing works
Bankruptcy prediction for credit risk using neural networks: A survey and new results
Atiya, A. F. (2001) · IEEE Transactions on Neural Networks · doi:10.1109/72.935101 · Cited by 699 · see citing works
A crossbar array of magnetoresistive memory devices for in-memory computing
Jung, S., Lee, H., Myung, S., Kim, H., Yoon, S. K., Kwon, S.-W., Ju, Y., Kim, M., Yi, W., Han, S., et al. (2022) · Nature · doi:10.1038/s41586-021-04196-6 · Cited by 644 · see citing works
Programmable computing with a single magnetoresistive element
Ney, A., Pampuch, C., Koch, R., & Ploog, K. (2003) · Nature · doi:10.1038/nature02014 · Cited by 400 · see citing works
Optimizing Loop Operation and Dataflow in FPGA Acceleration of Deep Convolutional Neural Networks
Ma, Y., Cao, Y. K., Vrudhula, S. B. K., & Seo, J.-S. (2017) · ACM/SIGDA International Symposium on Field-Programmable Gate Arrays (FPGA) · doi:10.1145/3020078.3021736 · Cited by 399 · see citing works
Artificial convolution neural network for medical image pattern recognition
Lo, S. B., Chan, H., Lin, J.-S., Li, H., Freedman, M. T., & Mun, S. K. (1995) · Neural Networks · doi:10.1016/0893-6080(95)00061-5 · Cited by 321 · see citing works
In situ training of feed-forward and recurrent convolutional memristor networks
Wang, Z., Li, C., Lin, P., Rao, M., Nie, Y., Song, W., Qiu, Q., Li, Y., Yan, P., Strachan, J. P., et al. (2019) · Nature Machine Intelligence · doi:10.1038/s42256-019-0089-1 · Cited by 307 · see citing works
The use of artificial neural networks in materials science based research
Sha, W., & Edwards, K. L. (2007) · Materials & Design (1980-2015) · doi:10.1016/j.matdes.2007.02.009 · Cited by 286 · see citing works
4K-memristor analog-grade passive crossbar circuit
Kim, H., Mahmoodi, M. R., Nili, H., & Strukov, D. B. (2021) · Nature Communications · doi:10.1038/s41467-021-25455-0 · Cited by 265 · see citing works
Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01781 · Cited by 246 · see citing works
YodaNN: An Ultra-Low Power Convolutional Neural Network Accelerator Based on Binary Weights
Andri, R., Cavigelli, L., Rossi, D., & Luca Benini, C. (2016) · IEEE Computer Society Annual Symposium on VLSI · doi:10.1109/isvlsi.2016.111 · Cited by 213 · see citing works
Kim, G. H., Lee, J.-H., Ahn, Y., Jeon, W., Song, S. J., Seok, J. Y., Yoon, J. H., Yoon, K. J., Park, T. J., & Hwang, C. S. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201202170 · Cited by 174 · see citing works
Self-citationUltrahigh drive current and large selectivity in GeS selector
Jia, S., Li, H., Gotoh, T., Longeaud, C., Zhang, B., Lyu, J., Lv, S., Zhu, M., Song, Z., Liu, Q., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-18382-z · Cited by 162 · see citing works
3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector
Jo, S. H., Kumar, T., Narayanan, S., Lu, W. D., & Nazarian, H. (2014) · 2014 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2014.7046999 · Cited by 155 · see citing works
Ferroelectric Second-Order Memristor
Mikheev, V., Chouprik, A. A., Lebedinskiǐ, Y. Y., Zarubin, S., Matveyev, Y., Kondratyuk, E., Kozodaev, M. G., Markeev, A. M., Zenkevich, A. V., & Negrov, D. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b08189 · Cited by 135 · see citing works
Self-rectifying resistive memory in passive crossbar arrays
Jeon, K., Kim, J., Ryu, J. J., Yoo, S.-J., Song, C., Yang, M., Jeong, D. S., & Kim, G. H. (2021) · Nature Communications · doi:10.1038/s41467-021-23180-2 · Cited by 131 · see citing works
Self-citationChoi, S., Jang, S., Moon, J., Kim, J. C., Jeong, H. Y., Jang, P.-H., Lee, K., & Wang, G. (2018) · NPG Asia Materials · doi:10.1038/s41427-018-0101-y · Cited by 129 · see citing works
In‐Memory Computing with Memristor Content Addressable Memories for Pattern Matching
Graves, C. E., Li, C., Sheng, X., Miller, D., Ignowski, J., Kiyama, L., & Strachan, J. P. (2020) · Advanced Materials · doi:10.1002/adma.202003437 · Cited by 108 · see citing works
Caffeinated FPGAs: FPGA framework For Convolutional Neural Networks
DiCecco, R., Lacey, G., Vasiljevic, J., Chow, P., Taylor, G. W., & Areibi, S. M. (2016) · International Conference on Field-Programmable Technology (FPT) · doi:10.1109/fpt.2016.7929549 · Cited by 107 · see citing works
Kalyan, K., Jakhia, B., Lele, R. D., Joshi, M. S., & Chowdhary, A. S. (2014) · Advances in Bioinformatics · doi:10.1155/2014/708279 · Cited by 101 · see citing works
Compute-in-Memory with Emerging Nonvolatile-Memories: Challenges and Prospects
Yu, S., Sun, X., Peng, X., & Huang, S. (2020) · Custom Integrated Circuits Conference · doi:10.1109/cicc48029.2020.9075887 · Cited by 83 · see citing works
Review of ASIC accelerators for deep neural network
Machupalli, R., Hossain, M., & Mandal, M. K. (2022) · Microprocessors and Microsystems · doi:10.1016/j.micpro.2022.104441 · Cited by 82 · see citing works
Ryu, J., Hussain, F. A., Mahata, C., Ismail, M., Abbas, Y., Kim, M., Choi, C., Park, B., & Kim, S. (2020) · Applied Surface Science · doi:10.1016/j.apsusc.2020.147167 · Cited by 79 · see citing works
Self-citationBenchmarking Memory-Centric Computing Systems: Analysis of Real Processing-In-Memory Hardware
Gómez-Luna, J., Hajj, I. E., Fernandez, I., Giannoula, C., Junior, G. F. D. O., & Mutlu, O. (2021) · International Green and Sustainable Computing Conference · doi:10.1109/igsc54211.2021.9651614 · Cited by 71 · see citing works
Phase Change Random Access Memory for Neuro‐Inspired Computing
Wang, Q., Niu, G., Ren, W., Wang, R., Chen, X.-G., Li, X., Ye, Z., Xie, Y., Song, S., & Song, Z. (2021) · Advanced Electronic Materials · doi:10.1002/aelm.202001241 · Cited by 70 · see citing works
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
Chien, W.-C., Yeh, C. W., Bruce, R. L., Cheng, H., Kuo, I. T., Yang, C.-H., Ray, A., Miyazoe, H., Kim, W. W., Carta, F., et al. (2018) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2871197 · Cited by 62 · see citing works
Shenoy, R. S., Burr, G. W., Virwani, K. R., Jackson, B. L., Padilla, A., Narayanan, P., Rettner, C. T., Shelby, R. M., Bethune, D. S., Raman, K. V., et al. (2014) · Semiconductor Science and Technology · doi:10.1088/0268-1242/29/10/104005 · Cited by 61 · see citing works
Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device
Kim, G. H., Ju, H., Yang, M., Lee, D. K., Choi, J. W., Jang, J. H., Lee, S. G., Su, I., Park, B. K., Han, J. H., et al. (2017) · Small · doi:10.1002/smll.201701781 · Cited by 46 · see citing works
Self-citationWoo, H. C., Kim, J., Lee, S., Kim, H. J., & Hwang, C. S. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200656 · Cited by 28 · see citing works
Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance
Seo, H. K., Ryu, J. J., Lee, S. Y., Park, M., Park, S.-G., Song, W., Kim, G. H., & Yang, M. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200161 · Cited by 24 · see citing works
Self-citationDealing with Non-Idealities in Memristor Based Computation-In-Memory Designs
Gebregiorgis, A., Singh, A., Diware, S., Bishnoi, R., & Hamdioui, S. (2022) · IEEE/IFIP International Conference on Very Large Scale Integration of System-on-Chip · doi:10.1109/vlsi-soc54400.2022.9939618 · Cited by 23 · see citing works
Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device
Ryu, J. J., Jeon, K., Yeo, S., Lee, G., Kim, C., & Kim, G. H. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b20035 · Cited by 19 · see citing works
Self-citationSelf-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure
Deng, Y., Xu, X., Xu, Z., Wang, M., Liu, Q., Ma, Y., Chen, J., Meng, K., Wu, Y., Miao, J., et al. (2021) · Ceramics International · doi:10.1016/j.ceramint.2021.11.005 · Cited by 17 · see citing works
Liu, B., Tai, H. H., Liang, H., Zheng, E.-Y., Sahoo, M., Hsu, C. H., Chen, T., Huang, C. A., Wang, J., Hou, T., et al. (2020) · Materials Chemistry Frontiers · doi:10.1039/d0qm00152j · Cited by 14 · see citing works
Cho, H., & Kim, S. (2020) · Coatings · doi:10.3390/coatings10090908 · Cited by 13 · see citing works
Memristive devices based on Cu-doped NbO films with large self-rectifying ratio
Huang, J., Huang, H.-M., Xiao, Y., Wang, T., & Guo, X. (2021) · Solid State Ionics · doi:10.1016/j.ssi.2021.115732 · Cited by 13 · see citing works
Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device
Jeon, K., Ryu, J. J., Jeong, D. S., & Kim, G. H. (2022) · Advanced Materials Interfaces · doi:10.1002/admi.202200392 · Cited by 12 · see citing works
Self-citationPhase Change Memory-based Hardware Accelerators for Deep Neural Networks (invited)
Burr, G., Narayanan, P., Ambrogio, S., Okazaki, A., Tsai, H., Hosokawa, K., Mackin, C., Nomura, A., Yasuda, T., Demarest, J., et al. (2023) · 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · doi:10.23919/vlsitechnologyandcir57934.2023.10185411 · Cited by 2 · see citing works
Flagged first, then by citations
2 of the 56 references couldn’t be matched to a known paper.
Research works printed but not linked: 8
- [1]Hertz, J., Krogh, A. & Palmer, R. G. Introduction of Neural Computation (Perseus, Cambridge, MA, 1991).
- [4]Tian, Y., Pei, K., Jana, S. DeepTest: Automated testing of deep-neural-network-driven autonomous cars. in Proceedings of the 40th International Conference on Software Engineering (ICSE ‘18) 303–314 (Assoc. for Computing Machinery, New York, 2018).
- [9]Hubara I Courbariaux M Soudry D El-Yaniv R Bengio Y Quantized Neural Network. Training neural networks with low precision weights and activations J. Mach. Learn. Res. (JMLR) 2018 18 1 30
- [11]Han, S., Mao, H. & Dally, W. J. Deep compression: Compressing deep neural networks with pruning, trained quantization and huffman coding. arXiv preprint arXiv:1510.00149. (2015). · arXiv
- [12]Zhu, C., Han, S., Mao, H. & Dally, W. J. Trained ternary quantization. arXiv preprint arXiv:1612.01064. (2016). · arXiv
- [13]Howard, A. G. et al. MobileNets: Efficient Convolutional Neural Networks for Mobile Vision Applications. arXiv:1704.04861, (2017). · arXiv
- [20]Lee, S. et al. Hardware architecture and software stack for PIM based on commercial DRAM technology: Industrial product. in Ac. Med. 48th Annual International Symposium on Computer Architecture (ISCA) 43–56 (IEEE, 20212021).
- [58]Courbariaux, M., Hubara, I., Soudry, D., El-Yaniv, R. & Bengio, Y. Binarized neural networks: Training deep neural networks with weights and activations constrained to+ 1 or-1. arXiv preprint arXiv:1602.02830 (2016). · arXiv
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Woo, K. S., Han, J., Yi, S., Thomas, L., Park, H., Kumar, S., & Hwang, C. S. (2024) · Nature Communications · doi:10.1038/s41467-024-47488-x · Cited by 76 · see citing works
Kim, Y. S., Baek, J. H., Im, I. H., Lee, D. H., Park, M. H., & Jang, H. W. (2024) · ACS Nano · doi:10.1021/acsnano.4c12884 · Cited by 70 · see citing works
Kim, K., Song, M. S., Hwang, H., Hwang, S., & Kim, H. (2024) · Frontiers in Neuroscience · doi:10.3389/fnins.2024.1279708 · Cited by 70 · see citing works
Peng, H., Gan, L., & Guo, X. (2024) · Chip · doi:10.1016/j.chip.2024.100093 · Cited by 56 · see citing works
Adaptive mode selection of electrical activities in a neuron with a memristive ion channel
Yang, F., Song, X., & Yu, Z. (2024) · Nonlinear Dynamics · doi:10.1007/s11071-024-10710-y · Cited by 55 · see citing works
Pan, J., Kan, H., Liu, Z., Gao, S., Wu, E., Li, Y., & Zhang, C. (2024) · npj Flexible Electronics · doi:10.1038/s41528-024-00356-6 · Cited by 50 · see citing works
Zhang, G., Fan, X., Wang, J., Wang, Z., Zhang, Z., Li, P., Ma, Y., Huang, K., Yu, B., Wan, Q., et al. (2025) · Nature Communications · doi:10.1038/s41467-025-60970-4 · Cited by 41 · see citing works
Liu, Q., Ren, H. J., Wei, Q., & Li, M. (2025) · Advanced Science · doi:10.1002/advs.202509155 · Cited by 34 · see citing works
A Review of Recent Developments in Neuromorphic Computing Based on Emerging Memory Devices
Sun, J., Sun, Y., Li, X., Sun, Y., Hong, Q., & Wang, C. (2025) · Nonlinear Dynamics · doi:10.1007/s11071-025-11727-7 · Cited by 32 · see citing works
Kim, M.-S., & Kim, S. (2024) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c00428 · Cited by 24 · see citing works
A neuronal circuit based on a second-order memristor
Shi, F., Cao, Y., Banerjee, S., & Mou, J. (2024) · Nonlinear Dynamics · doi:10.1007/s11071-024-10662-3 · Cited by 25 · see citing works
Kim, S., Park, K., Hong, K., Kim, T., Park, J., Youn, S., Kim, H., & Choi, W. Y. (2024) · Advanced Materials Technologies · doi:10.1002/admt.202400063 · Cited by 24 · see citing works
Choi, S., Bezugam, S. S., Bhattacharya, T., Kwon, D., & Strukov, D. B. (2025) · Nature Communications · doi:10.1038/s41467-025-63831-2 · Cited by 24 · see citing works
Pan, J., Wu, T., Yang, W., Li, Y., Zhang, J., & Kan, H. (2024) · Science China Materials · doi:10.1007/s40843-024-2946-y · Cited by 21 · see citing works
Advances of Emerging Memristors for In-Memory Computing Applications
Chen, Q., Lin, L., Meng, J., Xu, M., & Wang, T. (2025) · Research · doi:10.34133/research.0916 · Cited by 22 · see citing works
Ghazanfar, H., Rabeel, M., Nisar, S., Ahmad, M., Zulfiqar, M. W., Sulaman, M., Kim, H., Dastgeer, G., & Kim, D. (2026) · Journal of Colloid and Interface Science · doi:10.1016/j.jcis.2026.139943 · Cited by 21 · see citing works
Real-time signal processing enabled by fused networks on a memristor-based system on a chip
Wang, Z., Song, W., Wang, T., Wang, Z., Xu, Y., Rao, M., Cai, F., Yin, W., Chen, M. S., Ge, N., et al. (2025) · Science Advances · doi:10.1126/sciadv.adv3436 · Cited by 20 · see citing works
Zhang, G., Wang, Z., Fan, X., Wang, Z., Li, P., Luo, Q., Gao, D., Wan, Q., & Zhang, Y. (2024) · Applied Physics Letters · doi:10.1063/5.0225833 · Cited by 20 · see citing works
Lee, Y., Rhee, H., Kim, G., Cheong, W. H., Kim, D. H., Song, H., Kay, S. N., Lee, J., & Kim, K. M. (2025) · Nature Communications · doi:10.1038/s41467-025-59589-2 · Cited by 19 · see citing works
Self-citationCheng, X., Huang, Z., Yu, Y. M., Bai, L., Sun, M., Han, Z., Zhang, R., & Li, S. (2025) · Scientific Data · doi:10.1038/s41597-025-05065-x · Cited by 18 · see citing works
Lee, D. H., Kim, J. E., Cho, Y. H., Kim, S., Park, G. H., Choi, H., Lee, S. Y., Kwon, T., Kim, D. H., Jeong, M., et al. (2024) · Materials Horizons · doi:10.1039/d4mh00519h · Cited by 17 · see citing works
Zhang, G., Wang, Z., Fan, X., Li, P., Gao, D., Zhang, Z., Wan, Q., & Zhang, Y. (2024) · Nano Letters · doi:10.1021/acs.nanolett.4c04385 · Cited by 17 · see citing works
Photoelectric Reservoir Computing Based on TiOx Memristor for Analog Signal Processing
Li, Z., Gu, D., Xie, X., Li, P., Sun, B. T., Liao, C., Hu, X., Jia, Y., Wang, L., Duan, S., et al. (2025) · ACS Applied Nano Materials · doi:10.1021/acsanm.5c00337 · Cited by 17 · see citing works
Large-scale crossbar arrays based on three-terminal MoS2 memtransistors
Schranghamer, T. F., Pannone, A., Kumar, J. M., Baiju, D. K. T., Chen, C., Knight, T. V. M., Tadekawa, S., Haines, E., Ordoñez, R. C., Hayashi, C. K., et al. (2025) · Nature Communications · doi:10.1038/s41467-025-64536-2 · Cited by 18 · see citing works
High-performance CMOS-compatible self-rectifying memristor for passive array integration
Wang, Z., Zhang, G., Li, P., Xing, S., Wang, Z., Fan, X., Sun, J., Gao, D., Wan, Q., & Zhang, Y. (2024) · Physical Review Applied · doi:10.1103/physrevapplied.22.064003 · Cited by 15 · see citing works
Zhang, G., Fan, X., Wang, Z., Li, P., Zhang, Z., Yu, B., Gao, D., Loke, D. K., Zhong, S., Wan, Q., et al. (2026) · Nano-Micro Letters · doi:10.1007/s40820-025-02035-1 · Cited by 14 · see citing works
Yang, F., Sun, H., Zhang, X., Chen, D., Chen, J., Zhang, X., Chen, J., Zhao, Y. C., & Li, Y. (2025) · Advanced Functional Materials · doi:10.1002/adfm.202516894 · Cited by 14 · see citing works
Yang, D.-P., Yan, K., Jun, L., Tang, X., Zhong, R., Tang, Z., & Zhang, T. (2025) · Optics & Laser Technology · doi:10.1016/j.optlastec.2025.113491 · Cited by 13 · see citing works
Interface-Type Ionic Memristor for Energy-Efficient Neuromorphic Hardware
Yoo, C. S., & Lee, H. (2024) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c00373 · Cited by 12 · see citing works
Pramanik, S., Chakraborty, R., Maurya, P. P., Suman, S., Swaminathan, P., & Pal, B. N. (2025) · Advanced Functional Materials · doi:10.1002/adfm.202514732 · Cited by 12 · see citing works
Kim, Y., Kwon, Y., Yoo, Y., Theyagarajan, K., Saikrithika, S., Lee, A., Bae, N. H., Lee, W.-C., Sim, G., Lee, Y., et al. (2025) · Nature Communications · doi:10.1038/s41467-025-66372-w · Cited by 12 · see citing works
Nie, Y., Jiao, S., Yang, X., Gao, S., Wang, D., Li, Y. F., Wang, J., & Zhao, L. (2026) · Light Science & Applications · doi:10.1038/s41377-026-02298-2 · Cited by 12 · see citing works
Digital Light Processing 3D Printing Technology in Biomedical Engineering: A Review
Chang, X., Liu, J., & Lü, J. (2025) · Macromolecular Bioscience · doi:10.1002/mabi.202500101 · Cited by 12 · see citing works
Luo, S., Fu, C., Zhang, C.-Y., Li, Z., Zhu, Z., Wang, J., Wang, Y., He, G., Luo, L., & Liang, F. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3408782 · Cited by 11 · see citing works
So, H., Kim, S., & Kim, S. (2024) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2024.175644 · Cited by 10 · see citing works
Temperature-dependent behavior of VO2-based artificial neurons
Zhao, T., Xu, Y. F., Liu, J., Bao, X., Liu, Y., & Gu, D. (2024) · Applied Physics Letters · doi:10.1063/5.0231840 · Cited by 9 · see citing works
Jang, J., & Gi, S.-G. (2025) · Advanced Materials Technologies · doi:10.1002/admt.202500588 · Cited by 11 · see citing works
Composition-dependent electrical characteristics of GeSeTe-based selector-only memory device
Mun, Y. Y., Yang, M. K., & Kim, G. H. (2025) · Applied Surface Science · doi:10.1016/j.apsusc.2025.165576 · Cited by 9 · see citing works
Self-citationMemristor-based Neuromorphic Diagnostic Systems: An Emerging Strategy for Intelligent Medicine
Sun, B. T., Zhang, J., Yang, C. F., Zhou, G., Sun, L., Cao, Z., Yang, B., Li, X., Chen, X., & Shao, J. (2025) · ACS Nano Medicine · doi:10.1021/acsnanomed.5c00084 · Cited by 8 · see citing works
Zhang, G., Wang, Z., Fan, X., Luo, Q., Li, P., Zhang, Z., Huang, K., Ma, Y., Zhang, Y., Gao, D., et al. (2025) · Device · doi:10.1016/j.device.2025.100988 · Cited by 8 · see citing works
AI-driven model for optimized pulse programming of memristive devices
Spetzler, B., Fritscher, M., Park, S., Kim, N., Wenger, C., & Ziegler, M. (2025) · APL Machine Learning · doi:10.1063/5.0251113 · Cited by 7 · see citing works
Advancements in Fluidic Ionic Devices: Implications for Neuromorphic Integrated Circuit Design
Lv, H., Liu, R., & Zhang, Y. (2025) · ACS Sensors · doi:10.1021/acssensors.5c01063 · Cited by 7 · see citing works
Liu, Z., Gao, C., Yang, J., Chen, Z., Li, E., Li, J., Li, M., & Zhang, J. (2025) · International Journal of Extreme Manufacturing · doi:10.1088/2631-7990/ae053a · Cited by 8 · see citing works
Device‐Level Implementation of Reservoir Computing With Memristors
Park, S., Kim, H., & Jang, H. W. (2026) · Advanced Intelligent Systems · doi:10.1002/aisy.202500843 · Cited by 8 · see citing works
Artificial Intelligence for Materials Science: Transforming Research Paradigms
Li, Y., Wang, S., Wang, J., Liu, Q., & Zhang, J. (2026) · Chemical Reviews · doi:10.1021/acs.chemrev.6c00012 · Cited by 8 · see citing works
Duan, Z., Chen, J., He, S., Yu, X., Wang, Q., Zhang, X., & Xiong, P. (2025) · Micromachines · doi:10.3390/mi16030246 · Cited by 7 · see citing works
Jeong, S. Y., Jung, J., Seo, H. K., Jeong, J., Lee, J. H., Kim, G. H., & Yang, M. (2024) · Results in Engineering · doi:10.1016/j.rineng.2024.102906 · Cited by 7 · see citing works
Self-citationFan, X., Wang, Z., Yu, H., Zhang, G., Li, P., Zhang, Z., Zhu, X., & Zhang, Y. (2025) · Applied Physics Letters · doi:10.1063/5.0283706 · Cited by 6 · see citing works
Lei, Y., Zhang, T., Qian, F., Chen, L., He, Y., Ma, W., Wu, Y., & Li, S. (2025) · Laser & Photonics Review · doi:10.1002/lpor.202502338 · Cited by 6 · see citing works
Park, T., Kim, J., Kwon, Y. J., Kim, H., Yim, S., Shin, D. H., Kim, Y. R., Kim, H. J., & Hwang, C. S. (2024) · Advanced Materials Technologies · doi:10.1002/admt.202400965 · Cited by 6 · see citing works
Pham, P., Tran, T., Anh, T. V. V., Nguyen, T. D., Brügger, J., Kawazoe, Y., Phan, T. B., Nguyen-Tran, T., Vu, N. H., & Pham, N. K. (2025) · Advanced Functional Materials · doi:10.1002/adfm.202516695 · Cited by 5 · see citing works
Skin-conformal electronics for intelligent gesture recognition
Lee, I., Shin, H., Cho, H., Choi, J.-G., Wang, G., & Park, S. (2025) · Nature Reviews Electrical Engineering · doi:10.1038/s44287-025-00215-0 · Cited by 5 · see citing works
Li-based NbOx self-rectifying memristor crossbar arrays for precisely reversible weight programming
Son, J.-K., Kim, H., Son, K., Shin, Y.-S., Dae-Hee, H., & Lee, H. (2026) · Nano Energy · doi:10.1016/j.nanoen.2026.111869 · Cited by 5 · see citing works
Cluster-type conductive path-based selector-less 1R memristor array for spiking neural networks
Kim, J. E., Hu, S., Kwon, J. Y., Chun, S. Y., Soh, K., Yun, H., Baek, S., Nahm, S., Jeong, Y. J., & Yoon, J. H. (2025) · Nano Energy · doi:10.1016/j.nanoen.2025.110983 · Cited by 4 · see citing works
Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing
Son, K., Cho, J. M., Shin, D. H., Kim, Y. R., Ghenzi, N., Cheong, S., Kim, B. S., Lee, J., Kim, S., Choi, W., et al. (2025) · Advanced Materials · doi:10.1002/adma.202514099 · Cited by 4 · see citing works
Bakhit, B., Xie, X., Fairclough, S. M., Jan, A., Persson, I., Martino, G. D., Zhu, B., Ducati, C., Jia, Q., Yildiz, B., et al. (2026) · Science Advances · doi:10.1126/sciadv.aec2324 · Cited by 4 · see citing works
Fault Impact Map for Memristive Crossbar Neural Networks
Schroedter, R., Haidar, A., & Tetzlaff, R. (2024) · International Conference on Modern Circuits and Systems Technologies · doi:10.1109/mocast61810.2024.10615515 · Cited by 4 · see citing works
Microfluidic memristive oscillators as universal logic gates for neuromorphic computing
Stuhlmüller, N. C. X., van Roij, R., & Dijkstra, M. (2025) · Soft Matter · doi:10.1039/d5sm00601e · Cited by 4 · see citing works
A Fault-Tolerant Framework for Stuck-at Fault Mitigation in Memristor-Based Ternary Neural Networks
You, K., & Li, C. (2025) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2025.3609785 · Cited by 4 · see citing works
Dynamic memristor array with multiple reservoir states for training efficient neuromorphic computing
Noh, M., Ju, D., & Kim, S. (2024) · Journal of Materials Chemistry C · doi:10.1039/d4tc02324b · Cited by 4 · see citing works
Transistor-Structured Artificial Dendrites for Spatiotemporally Correlated Reservoir Computing
Ni, Y., Zhang, Y., Lin, J., Liu, X., Yu, Y., Liu, L., Zhong, W., Chen, Y., Chen, R., Kwok, H. S., et al. (2025) · IEEE Electron Device Letters · doi:10.1109/led.2025.3598823 · Cited by 3 · see citing works
A Multifunctional Self-Rectifying Memristor Enabling LIF Neuron and Nociceptor Behaviors
Cai, B., Wang, C., Chen, K., Sun, Q., Zhang, D. W., & Chen, L. (2025) · IEEE Electron Device Letters · doi:10.1109/led.2025.3614142 · Cited by 3 · see citing works
Ghafoor, F., Kim, H., Zhang, H., Ghafoor, B., Lee, M., Shi, T., & Kim, D. (2026) · Advanced Composites and Hybrid Materials · doi:10.1007/s42114-025-01566-w · Cited by 3 · see citing works
Kim, Y. W., An, Y.-J., Kim, S.-H., Kim, Y.-B., Kim, D.-M., Gautam, S. K., Ban, S.-H., Lee, J.-H., Yeom, J.-H., Kim, K., et al. (2026) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.5c02491 · Cited by 3 · see citing works
Self-Organized Protonic Conductive Nanochannel Arrays for Ultra-High-Density Data Storage
Wang, D., Zhang, J., Liu, Y., Guo, Z., Fu, Z., Ren, H., Zhu, X., Jiang, Y., Zhao, Q., Chen, J., et al. (2025) · Nano Letters · doi:10.1021/acs.nanolett.4c05414 · Cited by 3 · see citing works
Curvature-Based Piecewise Linear Approximation Method of GELU Activation Function in Neural Networks
Mohaidat, T., Khan, M. R. K., & Khalil, K. (2024) · International Conference on Artificial Intelligence, Blockchain, and Internet of Things (AIBThings) · doi:10.1109/aibthings63359.2024.10863181 · Cited by 3 · see citing works
Electric Field‐Driven Conformational Changes in Molecular Memristor and Synaptic Behavior
Lim, C., Kim, T., Park, Y. J., Kim, D., Shin, C., Ha, S., Lin, J., Li, Y., & Park, J. (2025) · Advanced Science · doi:10.1002/advs.202505016 · Cited by 3 · see citing works
Device-level nonlinearity and temporal memory in optoelectronic reservoir computing
Lee, W. W., Cho, J.-H., Hur, J., Oh, H., & Yoo, H. (2025) · Nano Convergence · doi:10.1186/s40580-025-00522-0 · Cited by 5 · see citing works
Rigid propagation of visual motion in the insect’s neural system
Chen, H., Fan, B., Li, H., & Peng, J. (2024) · Neural Networks · doi:10.1016/j.neunet.2024.106874 · Cited by 3 · see citing works
Designing Memristive Materials for Artificial Dynamic Intelligence
Kim, Y. S., & Jang, H. W. (2025) · Advanced Intelligent Discovery · doi:10.1002/aidi.202500020 · Cited by 2 · see citing works
Ali, A., Abbas, H., Li, J., Jung, J., & Ang, D. S. (2024) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c01392 · Cited by 2 · see citing works
GRAMC: General-Purpose and Reconfigurable Analog Matrix Computing Architecture
Pan, L., Wang, S., Zuo, P., & Sun, Z. (2025) · Design, Automation, and Test in Europe · doi:10.23919/date64628.2025.10992953 · Cited by 1 · see citing works
Computational magnetic metasurfaces in the low radiofrequency regime
Dellabate, A., Monorchio, A., & Brizi, D. (2025) · Scientific Reports · doi:10.1038/s41598-025-24629-w · Cited by 1 · see citing works
Van der Waals integration of 2D materials for advanced intelligent computing
Kwak, C., Park, K., Song, M., Jang, H. W., & Suh, J. M. (2025) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ae294e · Cited by 1 · see citing works
Zhang, G., Fan, X., Wang, Z., Li, P., Zhou, Y., Sun, D., Ren, K., Li, Y., Yu, B., Wan, Q., et al. (2025) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm50572.2025.11353573 · Cited by 1 · see citing works
Chun, S. Y., Jang, Y. H., Kim, J. E., Soh, K., Nam, M. S., Yu, N. K., Han, J., Lee, S. H., Kang, C., Hwang, C. S., et al. (2026) · Small Methods · doi:10.1002/smtd.202502405 · Cited by 1 · see citing works
WO3−x:N/ZnO:N broadband optoelectronic synapse for object detection in edge computing
Wu, T., Wu, J., Yue, W., Zhang, M., Kim, E.-S., Kim, N., & Li, Y. (2026) · Science China Materials · doi:10.1007/s40843-025-3839-4 · Cited by 1 · see citing works
Lee, M. K., Jeong, J.-S., Jung, J., Seo, H. K., Shin, C., Kim, G. H., & Yang, M. K. (2026) · Advanced Composites and Hybrid Materials · doi:10.1007/s42114-026-01695-w · Cited by 1 · see citing works
Self-citationJu, S., & Kim, S. (2026) · Journal of Materials Chemistry C · doi:10.1039/d6tc00138f · Cited by 1 · see citing works
Dong, M., Hu, R., Wang, J., Han, J., Wu, Z., Li, D., Yang, D., & Pi, X. (2026) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ae6f47 · Cited by 1 · see citing works
Characteristics of multi-level resistance states in hafnium oxide-based nonvolatile memristors
Wang, Y., Zhou, J., Huang, C.-Y., Yu, W.-D., Wu, H., Lin, S., Tian, N., Li, Q., & Zhang, B. (2026) · Nano Express · doi:10.1088/2632-959x/ae72ab · Cited by 1 · see citing works
Ultrafast Self-Rectifying Memristors for Advanced in-Memory Computing
Zhang, G., Wang, Z., Fan, X., Wang, Z., Li, P., Gao, D., & Zhang, Y. (2024) · IEEE International Conference on IC Design and Technology (ICICDT) · doi:10.1109/icicdt63592.2024.10717728
Kim, B., Lee, G.-S., Kwak, S., Min, B.-J., Choi, B.-H., Choi, H.-J., Jeong, J., & Nahm, S. (2025) · Journal of Materials Chemistry C · doi:10.1039/d5tc01371b
Zhang, G., Wang, Z., Fan, X., Gao, D., & Zhang, Y. (2025) · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · doi:10.1109/edtm61175.2025.11040489
Zhang, G., Wang, Z., Fan, X., Ma, Y., Yu, B., Wan, Q., & Zhang, Y. (2025) · doi:10.1109/esserc66193.2025.11213955
Lee, H., Son, J.-K., Kim, H.-S., Son, K., Shin, Y.-S., & Han, D.-H. (2025) · SSRN Electronic Journal · doi:10.2139/ssrn.5763137
Tun, T. T. T., Huo, J., & Ang, K. (2025) · Nanoscale Horizons · doi:10.1039/d5nh00675a
Samanta, P., Yadav, D. N., Das, P. P., & Sengupta, I. (2025) · Journal of Circuits Systems and Computers · doi:10.1142/s0218126626500775
Fully parallel programming on 1k graphene interfacial memristor crossbar array for edge computingPreprint
Roy, T. (2026) · Research Square · doi:10.21203/rs.3.rs-8051099/v1
Obernberger, S., González, Y., Sarkissian, A., Schindler, C., & Ruediger, A. P. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.6250359
Accelerating optimisation algorithms via optical propagation in complex media
Delloye, L. (2024) · theses.fr (ABES) · doi:10.70675/4b413b60z53e5z41bdzb56ezd58ede1ef04d
GRAS: General-Purpose and Reconfigurable Analog Solver for Matrix Computing
Pan, L., Wang, S., Zuo, P., & Sun, Z. (2026) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2026.3682645
Signal Integrity-Based Improved Training and Inference Scheme for Memristor Crossbar Arrays
Ma, H., Qiu, J., Shi, Y., Peng, B., Zhu, X., Chen, W., Li, D., & Li, E. (2026) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2026.3685536
Xu, J., & Sun, Y. (2026) · ChemElectroChem · doi:10.1002/celc.70208
Alimisis, V., Papathanasiou, A., Moustakas, V., Mylona, A., Dimas, C., & Sotiriadis, P. P. (2026) · IEEE Open Journal of Circuits and Systems · doi:10.1109/ojcas.2026.3665625
Chung, P. H., Ryu, J., Seo, D., Min, K., & Yoon, T. (2026) · npj Unconventional Computing · doi:10.1038/s44335-026-00065-5
Self-citationHigh-Reliability Volatile Self-Rectifying Memristors for Reservoir Computing
Cai, B., Wang, C., Chen, K., Sun, Q., Zhang, D. Y., & Chen, L. (2026) · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · doi:10.1109/edtm65772.2026.11497550
Bai, Y., Kong, Y., Du, Y., Zhang, J., Liu, S., Liu, M., Chen, S., Zha, C., Meng, Z., Zhang, L., et al. (2026) · Nano Research · doi:10.26599/nr.2026.94908794
Far, S. B., Qazani, M. R. C., & Rad, A. I. (2026) · Peer-to-Peer Networking and Applications · doi:10.1007/s12083-026-02268-w
- Authors
- Jeon, K., Ryu, J. J., Im, S., Seo, H. K., Eom, T., Ju, H., Yang, M. K., Jeong, D. S., & Kim, G. H.
- Affiliations
- Korea Research Institute of Chemical Technology (KR)
- Yonsei University (KR)
- Korea Institute of Science and Technology (KR)
- Sahmyook University (KR)
- Hanyang University (KR)
- Corresponding author
- Ju, Hyunsu
- Yang, Min Kyu
- Jeong, Doo Seok
- Kim, Gun Hwan
- Venue
- Nature Communications
- Published
- 2024-01-02
- Volume
- 15
- Issue
- 1
- Pages
- 129-129
- ISSN
- 2041-1723 (ISSN-L)
- PMC
- PMC10761713
- OpenAlex
- W4390502105
- Cited by
- 108
- References
- 56
- Citations by year
- 2026: 33 · 2025: 48 · 2024: 27
- FWCI
- 11.17
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Nature Communications (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- RePEc: Research Papers in Economics (submittedVersion)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Funders
- Ministry of Culture, Sports and Tourism (CR202104002)
- Korea Institute of Science and Technology (2E32242)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Artificial Intelligence › Neural Networks and Applications
- Physical Sciences › Computer Science › Artificial Intelligence › Neural Networks and Reservoir Computing
- Keywords
- memristors, self-rectifying memristors, defect tolerance, image classification
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