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The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.

Thermal transport through GaN–SiC interfaces from 300 to 600 K

Ziade, Elbara, Yang, Jia, Brummer, Gordie, Nothern, Denis, Moustakas, Theodore, Schmidt, Aaron J.·2015·Applied Physics Letters
DOI 10.1063/1.4930104
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Abstract

Silicon carbide is used as a substrate for high-power GaN devices because of its closely matched lattice spacing with GaN and its high thermal conductivity. In these devices, thermal resistance at the GaN–SiC interface is a bottleneck to heat flow, making this property an important factor in device design. In this letter, we report the first measurements of the thermal boundary conductance of epitaxial GaN grown directly on SiC without a transition layer. We find that the thermal boundary conductance increases from approximately 230 MW/m2K at 300 K to 330 MW/m2K at 600 K. Our measured values are in good qualitative agreement with the diffuse mismatch model for thermal boundary conductance and are in good quantitative agreement when we include a correction factor based on the ratio of Debye temperatures of the two materials. We also report the thermal conductivity of the GaN film, the thermal conductivity of 4H-SiC, and the thermal boundary conductance between Ni and GaN.

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Crossref · 10.1063/1.4930104

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6 of 6 references verified0 citation errors · 0 not checkable

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  • TDTR technique is implemented extensively to study thermal transport mechanisms across interfaces, including surface chemistry effects on interfacial thermal conductance across functionalized liquid-solid and solid-solid interfaces, interfacial thermal conductance between metals and dielectrics, and interface between low dimensional materials and bulk substrates.

    “TDTR technique is therefore implemented extensively to study the thermal transport mechanisms across interfaces, including the effect of surface chemistry on interfacial thermal conductance across functionalized liquid-solid boundary[95,117,118] and solid-solid interfaces[119], interfacial thermal conductance between metals and dielectrics,[120][121][122][123][124] and interface between low dim”

    From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [121]

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Research works printed but not linked: 23

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Metadata

Authors
Ziade, E., Yang, J., Brummer, G., Nothern, D., Moustakas, T., & Schmidt, A. J.
Affiliations
  • Boston University 1 Department of Mechanical Engineering, , Boston, Massachusetts 02215, USA
  • Boston University 2 Photonics Center, , Boston, Massachusetts 02215, USA
ORCID
Nothern, Denis
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2015-08-31
Volume
107
Issue
9
ISSN
  • 0003-6951
  • 1077-3118
DOI
10.1063/1.4930104
Cited by
101
References
6
Language
en
Funders
Trustees of Boston University

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