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A hybrid nanomemristor/transistor logic circuit capable of self-programming
Open accessAbstract
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.
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“They can also be used to implement digital logic [9], synapses in neural applications [10,11], and hybrid circuits [6,12].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [12]
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Xie, L., Cai, H., Wang, C., & Yang, J. (2019) · Integration · doi:10.1016/j.vlsi.2019.09.009 · Cited by 4
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Shahsavari, M., & Boulet, P. (2017) · arXiv (Cornell University) · doi:10.48550/arxiv.1703.00331 · Cited by 4
True random number generators in modern cryptography: A review
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Metadata
- Authors
- Borghetti, J., Li, Z., Straznicky, J., Li, X., Ohlberg, D. A. A., Wu, W., Stewart, D. R., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Proceedings of the National Academy of Sciences
- Publisher
- National Academy of Sciences
- Published
- 2009-02-10
- Volume
- 106
- Issue
- 6
- Pages
- 1699-1703
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- PMC
- PMC2631082
- OpenAlex
- W2064632620
- Cited by
- 270
- References
- 29
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 8 · 2023: 6 · 2022: 5 · 2021: 11 · 2020: 13 · 2019: 16 · 2018: 18 · 2017: 21 · 2016: 11 · 2015: 23 · 2014: 18 · 2013: 26 · 2012: 21
- FWCI
- 22.98
- Type
- journal article
- Language
- en
- Open access
- green
- www.ncbi.nlm.nih.gov
- Locations
- Proceedings of the National Academy of Sciences (publishedVersion)
- PubMed Central (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- memristor crossbar, Boolean circuits, nanoimprint lithography, nonvolatile switching
- MeSH terms
- Computers, Transistors, Electronic, Nanotechnology
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