The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
Open accessAbstract
Electric-pulse induced resistance hysteresis switching loops for Pr0.7Ca0.3MnO3 perovskite oxide films were found to exhibit an additional sharp "shuttle tail" peak around the negative pulse maximum for films deposited in an oxygen-deficient ambient. The resistance relaxation in time of this "shuttle tail" peak as well as resistance relaxation in the transition regions of the resistance hysteresis loop show evidence of oxygen diffusion under electric pulsing, and support a proposed oxygen diffusion model with oxygen vacancy pileup at the metal electrode interface region as the active process for the nonvolatile resistance switching effect in transition-metal oxides.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Colossal magnetoresistant materials: the key role of phase separation
Dagotto, E., Hotta, T., & Moreo, A. (2001) · Physics Reports · doi:10.1016/s0370-1573(00)00121-6 · Cited by 3,565
The physics of manganites: Structure and transport
Salamon, M. B., & Jaime, M. (2001) · Reviews of Modern Physics · doi:10.1103/revmodphys.73.583 · Cited by 2,488
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006) · Nature Materials · doi:10.1038/nmat1614 · Cited by 1,651
Reproducible switching effect in thin oxide films for memory applications
Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., & Widmer, D. (2000) · Applied Physics Letters · doi:10.1063/1.126902 · Cited by 1,122
Tomioka, Y., Asamitsu, A., KUWAHARA, H., et al. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.53.r1689 · Cited by 895
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
Liu, S. Q., Wu, N. J., & Ignatiev, A. (2000) · Applied Physics Letters · doi:10.1063/1.126464 · Cited by 843
Self-citationSawa, A., Fujii, T., Kawasaki, M., & Tokura, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1812580 · Cited by 747
Nonvolatile Memory with Multilevel Switching: A Basic Model
Rozenberg, M. J., Inoue, I. H., & Sánchez, M. J. (2004) · Physical Review Letters · doi:10.1103/physrevlett.92.178302 · Cited by 571
Ju, H. L., Gopalakrishnan, J., Peng, J. L., Li, Q., Xiong, G. C., Venkatesan, T., & Greene, R. L. (1995) · Physical Review B · doi:10.1103/physrevb.51.6143 · Cited by 543
Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface
Baikalov, A., Wang, Y. Q., Shen, B., Lorenz, B., Tsui, S., Sun, Y. Y., Xue, Y. Y., & Chu, C. W. (2003) · Applied Physics Letters · doi:10.1063/1.1590741 · Cited by 404
Research works printed but not linked: 5
- 10.1016/S0921-4534(01)00631-1 · doi:10.1016/s0921-4534(01)00631-1
- 10.1063/1.1473694 · doi:10.1063/1.1473694
- 10.1103/PhysRevB.67.180506 · doi:10.1103/physrevb.67.180506
- M. E. Glicksman, 2000, Diffusion in Solids: Field theory, Solid-State Principles, and Applications
- 10.1209/epl/i2000-00177-6 · doi:10.1209/epl/i2000-00177-6
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Iodine Migration and its Effect on Hysteresis in Perovskite Solar Cells
Li, C., Tscheuschner, S., Paulus, F., Hopkinson, P. E., Kießling, J., Köhler, A., Vaynzof, Y., & Huettner, S. (2016) · Advanced Materials · doi:10.1002/adma.201503832 · Cited by 549
Metadata
- Authors
- Nian, Y. B., Strozier, J., Wu, N. J., Chen, X., & Ignatiev, A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-04-04
- Volume
- 98
- Issue
- 14
- Pages
- 146403-146403
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1990936281
- Cited by
- 521
- References
- 13
- FWCI
- 40.63
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides. https://app.cochat.ai/papers/10.1103/physrevlett.98.146403
- The paper
- Nian, Y. B., Strozier, J., Wu, N. J., Chen, X., & Ignatiev, A. (2007). Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides. Physical Review Letters. https://doi.org/10.1103/physrevlett.98.146403
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
