The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Scaling the Si MOSFET: from bulk to SOI to bulk
Abstract
Scaling the Si MOSFET is reconsidered. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to an undesirably large junction capacitance and degraded mobility. By studying the scaling of fully depleted SOI devices, the important concept of controlling horizontal leakage through vertical structures is highlighted. Several structural variations of conventional SOI structures are discussed in terms of a natural length scale to guide the design. The concept of vertical doping engineering can also be realized in bulk Si to obtain good subthreshold characteristics without large junction capacitance or heavy channel doping.>
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Cites
Design of ion-implanted MOSFET's with very small physical dimensions
Dennard, R. H., Gaensslen, F. H., Yu, H.-N., Rideout, V. L., Bassous, E., & LeBlanc, A. R. (1974) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.1974.1050511 · Cited by 3,548
Short-channel effect in fully depleted SOI MOSFETs
Young, K. K. (1989) · IEEE Transactions on Electron Devices · doi:10.1109/16.19942 · Cited by 916
Generalized guide for MOSFET miniaturization
Brews, J. R., Fichtner, W., Nicollian, E. H., & Sze, S. M. (1980) · IEEE Electron Device Letters · doi:10.1109/edl.1980.25205 · Cited by 356
Analysis of conduction in fully depleted SOI MOSFETs
Young, K. K.-L. (1989) · IEEE Transactions on Electron Devices · doi:10.1109/16.19960 · Cited by 151
Two-dimensional analytic modeling of very thin SOI MOSFETs
Woo, J. C. S., Terrill, K. W., & Vasudev, P. K. (1990) · IEEE Transactions on Electron Devices · doi:10.1109/16.57162 · Cited by 73
Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Two-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
Channel Length Scaling of MoS2 MOSFETs
Liu, H., Neal, A. T., & Ye, P. D. (2012) · ACS Nano · doi:10.1021/nn303513c · Cited by 816
Frontiers of silicon-on-insulator
Celler, G. K., & Cristoloveanu, S. (2003) · Journal of Applied Physics · doi:10.1063/1.1558223 · Cited by 699
Cao, W., Bu, H., Vinet, M., Cao, M., Takagi, S., Hwang, S., Ghani, T., & Banerjee, K. (2023) · Nature · doi:10.1038/s41586-023-06145-x · Cited by 621
Metadata
- Authors
- Yan, R.-H., Ourmazd, A., & Lee, K. F.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1992-07
- Volume
- 39
- Issue
- 7
- Pages
- 1704-1710
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2133800303
- Cited by
- 910
- References
- 5
- FWCI
- 11.19
- Type
- journal article
- Language
- en
- Open access
- closed
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