Real-Time Aging Detection of SiC MOSFETs
Abstract
This paper presents a comprehensive study on degradation monitoring of silicon carbide mosfets and proposes an early warning method to detect aging. The proposed plug-in tool can be integrated to smart gate drivers or directly to power converters. During the accelerated aging tests (power cycling within safe operating area), several electrical parameters are monitored to find out critical signatures and precursors of failure. Among those, gate leakage current is identified as the most practical precursor, which exhibits consistent changes in all aged devices and is relatively easy to monitor. Due to its simple scheme and low cost, it can potentially be embedded into commercial gate drivers featuring improved reliability options.
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IGSS is almost constant over the lifetime and increases suddenly at the end of the lifetime.
“IGSS is almost constant over the lifetime and increases suddenly at the end of the lifetime.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [73]
Gate leakage current IGSS is another precursor for gate-oxide degradation monitoring.
“The gate leakage current ( I GSS ) is another precursor for gate-oxide degradation monitoring [73].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [73]
Cites
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A method for online ageing detection in SiC MOSFETs
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System Benefits for Solar Inverters using SiC Semiconductor Modules
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Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261 · see citing works
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Ugur, E., Yang, F., Pu, S., Zhao, S., & Akin, B. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2891214 · Cited by 159 · see citing works
Self-citationA New Complete Condition Monitoring Method for SiC Power MOSFETs
Ugur, E., Xu, C., Yang, F., Pu, S., & Akin, B. (2021) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2020.2970668 · Cited by 126 · see citing works
Self-citationEvaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
Self-citationFarhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93 · see citing works
Self-citationA Practical On-Board SiC MOSFET Condition Monitoring Technique for Aging Detection
Pu, S., Yang, F., Vankayalapati, B. T., Ugur, E., Xu, C., & Akin, B. (2020) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2020.2980220 · Cited by 75 · see citing works
Self-citationAC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“The gate leakage current ( I GSS ) is another precursor for gate-oxide degradation monitoring [73].”
BackgroundSelf-citationMurat Sezer, M., Akici, F., Afshar, M., Teja Vankayalapati, B., & Akin, B. (2025) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2025.3546928 · Cited by 8 · see citing works
Self-citation
- Authors
- Erturk, F., Ugur, E., Olson, J., & Akin, B.
- Affiliations
- The University of Texas at Dallas (US)
- Venue
- IEEE Transactions on Industry Applications
- Published
- 2019-01
- Volume
- 55
- Issue
- 1
- Pages
- 600-609
- ISSN
- 0093-9994 (ISSN-L)
- 1939-9367
- OpenAlex
- W2888804127
- Cited by
- 85
- References
- 16
- Citations by year
- 2026: 8 · 2025: 14 · 2024: 12 · 2023: 6 · 2022: 9 · 2021: 18 · 2020: 14 · 2019: 4
- FWCI
- 3.44
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Industry Applications (publishedVersion)
- Funders
- Office of Naval Research (N00014-15-1-2325)
- TxACE (ID 2712.026)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, degradation monitoring, gate leakage current, failure precursors, power cycling, accelerated aging test, converter reliability, real-time monitoring
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