Cited by 175Silicon Carbide Semiconductor TechnologiesRadiation Effects in ElectronicsGaN-based semiconductor devices and materials

The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo, Antonio, Wang, Jiabin, Colombage, Kalhana, Kamel, Tamer·2018·IEEE Transactions on Industrial Electronics

DOI 10.1109/tie.2017.2739687

Open this paper in CoChat — free account

Abstract

This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFETs devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-on transient characteristic (di/dt), the on-state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for di/dt. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

Integrity signals

Registry

Crossref · 10.1109/tie.2017.2739687

Cites

34 of 34 references verified0 citation errors · 0 not checkable

Statistics

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039
Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
Wang, H., Liserre, M., & Blaabjerg, F. (2013) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2013.2252958 · Cited by 919
Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
Avenas, Y., Dupont, L., & Khatir, Z. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2178433 · Cited by 559
Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review
Oh, H., Han, B., McCluskey, P., Han, C., & Youn, B. D. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2346485 · Cited by 515
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
Roschke, M., & Schwierz, F. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.930664 · Cited by 359
Temperature measurements of semiconductor devices - a review
Blackburn, D. L. (2004) · doi:10.1109/stherm.2004.1291304 · Cited by 319
Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules
Luo, H., Chen, Y., Sun, P., Li, W., & He, X. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2481465 · Cited by 240
Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
Bryant, A. T., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P. J., & Palmer, P. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2125803 · Cited by 236
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2312427 · Cited by 232

Flagged first, then by citations

Show all 33 references

Research works printed but not linked: 2

kuhn, 2009, Online junction temperature measurement of IGBTs based on temperature sensitive electrical parameters, Proc 13th Eur Conf Power Electron Appl, 1
brekel, 2009, Time resolved in situ Tvj measurements of 6.5kV IGBTs during inverter operation, Proc Power Convers Intell Motion Eur, 806

Sorted by citations

Items 101–175 of 175

On the Effect of SiC Power MOSFET Gate Oxide Degradation in High Frequency Phase Leg-Based Applications
Naghibi, J., Mohsenzade, S., Iqbal, S., Mehran, K., & Foster, M. P. (2022) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce50734.2022.9947441 · Cited by 4
Comparative Analysis on Thermal Performance and Reliability of Discrete SiC MOSFET in Press-Pack Package and Wire-Bonded Package
Zhu, Z., Yao, R., Li, H., Lai, W., Chen, Z., Li, J., Li, Y., & Wang, M. (2023) · IEEE International Power Electronics and Application Symposium (PEAS) · doi:10.1109/peas58692.2023.10395140 · Cited by 4
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage
Du, M., Liu, F., Yin, J., Dong, C., & Ouyang, Z. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3438673 · Cited by 4
A High-Resolution In Situ Condition Monitoring Circuit for SiC Gate Turn-Off Thyristor in Grid Applications
Liu, Y., Liu, L., Yin, S., Gu, Y., Deng, S., Xing, Z., Zhou, Q., Li, Z., & Zhou, K. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3061580 · Cited by 4
Junction Temperature Monitoring of Power Devices Using Convolutional Neural Networks
Xu, Z., Wang, H., Ge, X., Zhang, Y., Xie, D., Yao, B., Zhang, L., Wang, Y., & Feng, X. (2025) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2025.3549389 · Cited by 3
Turn-OFF Delay Time Based Online Junction Temperature Monitoring for SiC MOSFETs Over Aging
Zhang, B., Wang, Z., Zou, Z., Shi, G., Qiu, Y., & Du, B. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3596062 · Cited by 3
Quasi-Online Measurement of Threshold Voltage for SiC MOSFET
Wang, X., Peng, Y., & Shuai, Z. (2023) · IEEE International Power Electronics and Application Symposium (PEAS) · doi:10.1109/peas58692.2023.10395790 · Cited by 3
Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET
Dong, C., Gao, S., Liu, Y., Wang, G., Yin, J., & Du, M. (2024) · Microelectronics Journal · doi:10.1016/j.mejo.2024.106460 · Cited by 3
Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit
Chang, Y., Su, Y., Xiao, M., Wu, J., Zhang, X., & Chen, H. (2025) · Micromachines · doi:10.3390/mi16030304 · Cited by 3
A Kalman Filter Method Based on Adaptive Thermal Model for Online Junction Temperature Estimation of SiC MOSFET
Fu, Z., Wu, W., Chen, Y., Chen, Z., Tong, X., & Xu, L. (2025) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2025.3570281 · Cited by 3
Estimation of Thermal Network Models Parameters Based on Particle Swarm Optimization Algorithm
Bąba, S., Żelechowski, M., & Jasiński, M. (2019) · IEEE International Conference on Compatibility, Power Electronics and Power Engineering · doi:10.1109/cpe.2019.8862422 · Cited by 3
Junction Temperature Measurement Method for Thermal Resistance Testing of SiC MOSFET Module
Guo, H., Guo, C., Wei, L., & Liu, Y. (2021) · Journal of Physics Conference Series · doi:10.1088/1742-6596/1907/1/012012 · Cited by 3
Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging
Fujimoto, K., Hanafusa, H., Sato, T., & Higashi, S. (2022) · Applied Physics Express · doi:10.35848/1882-0786/ac4a10 · Cited by 3
Temperature Sensitive Electrical Parameters Selection for 10 kV SiC Power Module
Lin, M., Chen, R., Li, D., Tolbert, L. M., Wang, F., & Bai, H. K. (2023) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce53617.2023.10362474 · Cited by 3
Realization of an Online Junction Temperature Monitoring Scheme of SiC MOSFET Based on On-state Voltage Drop
Liang, G., Wang, H., Ge, X., & Wang, Y. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567705 · Cited by 3
Analysis and design of a latching current limiter based on a SiC N-MOSFET
López, A., Miaja, P. F., Arias, M., & Fernandez, A. (2021) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce47101.2021.9595074 · Cited by 3
Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs
Liu, F., Du, M., Yin, J., Dong, C., & Ouyang, Z. (2022) · Journal of Power Electronics · doi:10.1007/s43236-022-00562-3 · Cited by 3
A Bridge-Level Junction Temperature Estimation Method for SiC MOSFETs Combining Transient Voltage and Current Peaks
Wu, S., Sun, P., Huang, X., & Li, K. (2023) · Energies · doi:10.3390/en16104105 · Cited by 2
Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction
Kamel, T., Olagunju, O., & Johnson, T. (2025) · Machines · doi:10.3390/machines13080689 · Cited by 2
Self-citation
A Junction Temperature Monitoring Method Based on Turn-Off Current for IGBT Modules
Liu, L., Ge, X., Wang, H., Xu, Z., & Zhang, L. (2023) · IEEE International Power Electronics and Application Symposium (PEAS) · doi:10.1109/peas58692.2023.10395557 · Cited by 2
Selecting Temperature Sensitive Parameter for a Transient Thermal Impedance Measurements of E-Mode Power GaN HEMT
Górecki, P. (2024) · IEEE International Conference on Compatibility, Power Electronics and Power Engineering · doi:10.1109/cpe-powereng60842.2024.10604403 · Cited by 2
Analysis of errors in junction temperature estimated by temperature-sensitive electrical parameter for parallel-connected SBDs
Fukunaga, S., & Funaki, T. (2025) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/adacf5 · Cited by 2
Junction Temperature Ripple Modeling and Validation for SiC MOSFETs
Bharath, G. V., & Hu, Y. (2024) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce55643.2024.10860813 · Cited by 2
A High-Sensitive Online Tj Extracting Method Based on Electrothermal Interaction and Linear-Mode Current Response for Power MOSFET Devices
Yang, F., Wang, L., She, X., Cheng, Z., Zhu, M., Zhang, H., & Jia, L. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3540865 · Cited by 2
Automatic Big Data Acquisition of Electrical Parameters in Wide Bandgap Devices
Liu, C., Ni, Z., Wei, M., Niehaus, A., & Cao, D. (2019) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda46397.2019.8998833 · Cited by 2
Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation
Barón, K. M., Sharma, K., Nitzsche, M., & Kallfass, I. (2021) · European Conference on Power Electronics and Applications · doi:10.23919/epe21ecceeurope50061.2021.9570478 · Cited by 2
Real-Time Comprehensive Condition Monitoring Technique for SiC MOSFET-Based Inverters in EV Applications
Naghibi, J., Mehran, K., & Foster, M. P. (2023) · Transportation research procedia · doi:10.1016/j.trpro.2023.11.043 · Cited by 2
Contribution to condition monitoring of Silicon Carbide MOSFET based Power Module
Hologne, M. (2018) · doi:10.70675/1a6eaff2z0f5ez4df8z8fcfz7be33241c7e5 · Cited by 2
Investigations of Off-line Calibration and Consistency of SiC MOSFETs with Different Gate Structures
Liao, Y., Xu, Z., Wang, H., Ge, X., & Wang, Y. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567893 · Cited by 1
PCB Coil Based Turn-On Delay Measurement For Junction Temperature Estimation of SiC MOSFETs
Rafiq, A., & Pramanick, S. K. (2024) · Energy Conversion Congress and Expo Europe (ECCE Europe) · doi:10.1109/ecceeurope62508.2024.10752066 · Cited by 1
A pulse-current junction calibration method for power SiC MOSFET
Wang, T., Li, Q., Wang, D., Yang, G., & Guo, J. (2025) · IEICE Electronics Express · doi:10.1587/elex.22.20240702 · Cited by 1
Condition monitoring for detection of humidity-induced failures in control electronics of power converters
Sehr, F. F., Wagner, S., Schulz, A., & Vorwerk, A. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115832 · Cited by 1
Sensorless Dual TSEP (Vth, Rdson) Implementation for Junction Temperature Measurement in Parallelized SiC MOSFETs
Alauzet, L., Tounsi, P., & Fradin, J.-P. (2025) · Energies · doi:10.3390/en18133470 · Cited by 1
A Review of On-State Voltage Monitoring Circuits for Power Devices
Ding, Y., Zhang, T., Li, H., Zhang, J., Liu, W., & Li, W. (2025) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec64805.2025.11116264 · Cited by 1
Static Electrothermal Study of >3 kV Co-Packaged MOSFETs and Monolithic BiDFETs
Floyd, R., Mancini, S. A., Jang, S. Y., Yates, L., Binder, A. T., Flicker, J., Kaplar, R., Atcitty, S., Morgan, A. J., & Sung, W. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3619916 · Cited by 1
Active Thermal Control optimization and evaluation with detailed simulation and different lifetime models
Brzycki, M., Sharma, N., Lai, L., Rodionov, A., & Liu, Y. (2025) · Annual Conference of the IEEE Industrial Electronics Society (IECON) · doi:10.1109/iecon58223.2025.11221919 · Cited by 1
Noncontact Monitoring of Gate-Oxide Degradation in SiC MOSFETs Using Gate-Switching Oscillation
Li, H., Yang, Z., Xiang, D., Tian, X. C., Cui, H., Huang, H., & Lei, X. (2025) · IEEE Transactions on Instrumentation and Measurement · doi:10.1109/tim.2025.3635834 · Cited by 1
Comprehensive Evaluation and Optimization of Level Count for Cascaded H-Bridge Multilevel Inverters with Carrier-Phase-Shifted PWM
Li, Z., & Li, J. (2026) · Machines · doi:10.3390/machines14060628 · Cited by 1
Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for SiC MOSFET
Zeng, Z., Li, Z., Li, F., Jiang, X., & Wang, J. (2020) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia48364.2020.9367681 · Cited by 1
Self-citation
Revisiting On-State Resistance as TSEP for Discrete SiC MOSFETs: Steps Towards the In-Circuit Approach
Panciroli, E., Musetti, A., & Soldati, A. (2025) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2025.3560768 · Cited by 1
Insulated-gate bipolar transistor junction temperature estimation based on ℋ∞ robust controller in wind energy applications
Alhmoud, L., & Al‐Jiboory, A. K. (2019) · Wind Engineering · doi:10.1177/0309524x19877645 · Cited by 1
Online Health Monitoring in Power Modules for Inverter Topologies using Isolated Parameter Acquisition
Barón, K. M., Sharma, K., Nitzsche, M., & Kallfass, I. (2021) · IEEE Design Methodologies Conference (DMC) · doi:10.1109/dmc51747.2021.9529946 · Cited by 1
Research on modern power semiconductor modelling methodology for efficiency evaluation of power electronic systems in electromagnetic transient simulation
Xu, Y. (2021) · Mspace (University of Manitoba) · Cited by 1
Reliability and Condition Monitoring of Sic Power MOSFETsPreprint
Farhadi, M. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.4832844 · Cited by 2
Développement d’outils électrothermiques pour la localisation de défauts et pour l’optimisation de la performance de modules mécatroniques de puissance SiC
Nguyen, Q. C. (2021) · doi:10.70675/da736545z51dez428eza633zf798b5dcf8cd · Cited by 1
Junction Temperature measurement of SiC BJT via the voltage drop of VBC
Shi, B., Feng, S., He, Q., Zhang, Y., & Bai, K. (2018) · IEEE International Conference on Solid-State and Integrated Circuit Technology · doi:10.1109/icsict.2018.8564990
Research on Online Junction Temperature Measurement of MOSFET Devices
Jiang, B.-Y., Guo, C., & Luo, L. (2019) · Journal of Physics Conference Series · doi:10.1088/1742-6596/1237/3/032070
Temperature Measurement of RF Power Amplifier
Bąba, S., Jasiński, M., & Żelechowski, M. (2021) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/pemc48073.2021.9432633
A Current Harmonic Monitoring-Based Online Condition Monitoring Method for SiC MOSFETs
Ding, X., Wang, B., Shi, J., & Song, X. (2021) · IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) · doi:10.1109/sdemped51010.2021.9605541
Junction Temperature Measurement Method for SiC MOSFET Based on Charge Variation
Wu, S., Sun, P., & Li, K. (2023) · Lecture notes in electrical engineering · doi:10.1007/978-981-99-0357-3_90
A high-precision realization of online junction temperature estimation
Zheng, D., Ning, P., Qiu, Z., Sun, W., Fan, T., & Wen, X. (2023) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec58067.2023.10165888
A Comparative Study of Temperature Sensitive Electrical Characteristics of SiC MOSFETs Considering Structural Variations
Luo, M., Tan, K., Zhang, P., Li, Z., Ji, B., Tang, X., Hu, C., & Cao, W. (2024) · Lecture notes in electrical engineering · doi:10.1007/978-981-97-3940-0_23
Data-Driven Condition Monitoring Applications of Power Metal Oxide Semiconductor Field-Effect Transistor - a ReviewPreprint
He, Q. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.5052734
Data-Driven Condition Monitoring Applications of Power Metal Oxide Semiconductor Field-Effect Transistor - a ReviewPreprint
He, Q. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.5055218
Heat Generation Measurement of MOSFET in High-Frequency Transformer Circuits
Cheng, J., Zhang, Y., Cheng, X., & Liu, Y. (2024) · Journal of Physics Conference Series · doi:10.1088/1742-6596/2891/15/152007
Multidimensional Characterization of Temperature Sensitive Electrical Parameters in SiC Mosfets using Automation of Measurement Data Analysis
Solomakha, O., Barón, K. M., Afanasenko, V., & Kallfass, I. (2024) · IEEE Design Methodologies Conference (DMC) · doi:10.1109/dmc62632.2024.10812155
An accurate nonlinear temperature-dependent analytical model of the drain-source turn-on current changing rate for SiC MOSFETs
Zhang, Q., Chen, S., & Zhang, P. (2024) · Annual Conference of the IEEE Industrial Electronics Society (IECON) · doi:10.1109/iecon55916.2024.10905621
A Study of Module Design Method to Suppress the Oscillation Occurs Between Parallel-Connected Power Devices
Yato, S., Sakai, H., Araki, H., & Shimosako, S. (2025) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48143.2025.10977086
SiC MOSFET Vth sampling circuit design based on JEP183A
Wang, T., Li, Q., Wang, D., Liu, B., & Zhao, J. H. (2025) · IEICE Electronics Express · doi:10.1587/elex.22.20250269
Non-Intrusive Online Junction Temperature Monitoring in Si and SiC Power MOSFETs
Tutusaus, M., Perpiñà, X., Vellvehi, M., Fernández, M., Llorente, S., & Jordà, X. (2025) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd62843.2025.11117398
A Pulse Current Source for Transient Thermal Impedance Measurement With Low Nonthermal Switching Transient Effects
Wang, X., Kang, J., Lai, Y., Duan, Y., Xue, J., & Xin, Z. (2025) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2025.3600998
A New Gate-Oscillation-Based Miller Platform Voltage Online Monitoring Circuit for SiC-Mosfets
Zhao, C., Peng, Y., Cao, Y., & Shuai, Z. (2025) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec64805.2025.11116472
Evaluation of Threshold Hysteresis for SiC MOSFETs in Active Gate Drive Application
Wu, B., Lin, H., Feng, H., & Ran, L. (2025) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2025.3602658
Temperature Sensitivity Optimization for Dynamic Threshold Voltage-based Junction Temperature Estimation in SiC MOSFETs
Magdy, E., Mahmoud, H., & Taha, M. (2025) · IEEE Conference on Power Electronics and Renewable Energy (CPERE) · doi:10.1109/cpere65146.2025.11240091
Thermal Network Model of Sic Power Module Considering Material Temperature Variation Effect and Chip Thermal Coupling Effect
Ye, S., Zhu, Z., Dong, H., Yang, Y., Luo, H., Li, C., & Li, W. (2025) · Energy Conversion Congress and Expo Europe (ECCE Europe) · doi:10.1109/ecce-europe62795.2025.11238417
Modeling and Validation of Junction Temperature Estimation in High-Power SiC MOSFET Inverters for Electric Vehicle Applications
Willers, L. R., Silva, P. H. A., Rocha, L. R., & Vieira, R. P. (2026) · Eletrônica de Potência · doi:10.18618/rep.e202611
AI-Based Fault Diagnosis and Prediction of Power Switches
Lee, J.-J., Yu, B., Kim, S., Pyeon, D.-H., Lee, H.-S., & Choi, H.-J. (2026) · International Conference on Electronics, Information, and Communication (ICEIC) · doi:10.1109/iceic69189.2026.11386071
Characterization, analysis and modeling of silicon carbide power MOSFET
Dang, D. L. (2019) · doi:10.70675/4b78b1f8z6745z428az982ezc2db25c130f8
Turn-On Delay Based Online Junction Temperature Monitoring for Silicon Carbide Power Modules With a 70 ps Resolution Time-Digital Converter Circuit
Li, Y., Ning, Y., Yuan, X., Zhang, Y., Wang, K., Zhang, Z., Alatise, O. M., & Zhou, W. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3683441
A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices
Zhu, G., Li, X., Xiong, S., & Wang, C. (2026) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2026.3689949
Body-Diode Reliability Characterization of Silicon Carbide MOSFETs Toward a Degradation-Insensitive Online Junction Temperature Monitoring
Khadka, P., Zhang, Z., & Edrington, C. S. (2026) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec51134.2026.11516872
Online Parameter Estimation Based Digital Twin and EKF for Health Indicators of Buck Converters
Jin, B., Lv, C., Liu, J., & Tan, P. (2026) · International Power Electronics Conference (IPEC) · doi:10.23919/ipec-nagasaki2026-ec64663.2026.11596764
Data-Driven Decomposition of On-State Resistance of SiC MOSFETs for Health Monitoring
Simjanoski, F., Shekhar, A., Guoqi, Z., & van Driel, W. (2026) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/pemc69244.2026.11726044
A Review of Condition Monitoring and Lifetime Prediction for Power Semiconductor Devices
Molenaar, M., Shekhar, A., & Bauer, P. (2026) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/pemc69244.2026.11726138
Improving Thermal Resilience of SiC Power Converters: From Device Design, Packaging to Temperature Monitoring and Active Thermal Management
Chang, Y., Acosta, I. A., Zhang, K., Stathatos, A., Lee, J., & Li, C. (2026) · Chinese Journal of Electrical Engineering · doi:10.23919/cjee.2026.000118

Authors: Griffo, A., Wang, J., Colombage, K., & Kamel, T.
Affiliations: University of Sheffield (GB)
Malvern Instruments, Ltd., Malvern, U.K.
ORCID: Griffo, Antonio
Wang, Jiabin
Kamel, Tamer
Venue: IEEE Transactions on Industrial Electronics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Published: 2018-03
Volume: 65
Issue: 3
Pages: 2663-2671
ISSN: 0278-0046 (ISSN-L)
1557-9948
DOI: 10.1109/tie.2017.2739687
OpenAlex: W2747182495
Cited by: 175
References: 33
Citations by year: 2026: 10 · 2025: 27 · 2024: 27 · 2023: 19 · 2022: 17 · 2021: 33 · 2020: 20 · 2019: 16 · 2018: 6
FWCI: 4.78
Type: journal article
Language: en
Open access: closed
Licence: ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
doi.org/10.15223/policy-029 (stm-asf)
doi.org/10.15223/policy-037 (stm-asf)
Locations: IEEE Transactions on Industrial Electronics (publishedVersion)
White Rose Research Online (University of Leeds, The University of Sheffield, University of York) (acceptedVersion)
Funders: European Commission Horizon 2020 – Mobility for Growth Program (636170)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Keywords: SiC MOSFET, junction temperature estimation, temperature-sensitive electrical parameters, online condition monitoring, threshold voltage, turn-on transient, on-state voltage

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Abstract

Overview

Integrity signals

Verification

Claims the paper makes

Claims other papers make about this one

Self-check

Citations

Cites

Cited by

Related

Metadata

Record

About these checks