The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs
Abstract
This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFETs devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-on transient characteristic (di/dt), the on-state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for di/dt. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“The switching parameters like turnon delay time [90]-[92], turn-on di/dt [83], [93]-[95], turn-off delay time [70], [96], [97], and turn-off di/dt [95], are presented in the literature for junction temperature measurement of SiC MOSFETs.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
Experimental — accuracy not yet measuredThe cited source says what the claim attributes to it.
In the citing paper
“In [83], the parasitic impedance between the kelvin source and power source pins is used to measure the threshold voltage, which is suitable only for 4-pin devices.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039
Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
Wang, H., Liserre, M., & Blaabjerg, F. (2013) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2013.2252958 · Cited by 919
Avenas, Y., Dupont, L., & Khatir, Z. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2178433 · Cited by 559
Oh, H., Han, B., McCluskey, P., Han, C., & Youn, B. D. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2346485 · Cited by 515
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
Roschke, M., & Schwierz, F. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.930664 · Cited by 359
Temperature measurements of semiconductor devices - a review
Blackburn, D. L. (2004) · doi:10.1109/stherm.2004.1291304 · Cited by 319
Luo, H., Chen, Y., Sun, P., Li, W., & He, X. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2481465 · Cited by 240
Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
Bryant, A. T., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P. J., & Palmer, P. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2125803 · Cited by 236
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2312427 · Cited by 232
Xiong, Y., Cheng, X., Shen, Z. J., Mi, C. C., Wu, H., & Garg, V. K. (2008) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2008.918399 · Cited by 226
Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
Chen, H., Ji, B., Pickert, V., & Cao, W. (2014) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2013.2292547 · Cited by 192
A Physical Model of High Temperature 4H-SiC MOSFETs
Potbhare, S., Goldsman, N., Lelis, A. J., McGarrity, J. M., McLean, F. B., & Habersat, D. B. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926665 · Cited by 187
Online Vce measurement method for wear-out monitoring of high power IGBT modules
Bęczkowski, S., Ghimre, P., de Vega, A. R., Munk‐Nielsen, S., Rannestad, B., & Thøgersen, P. (2013) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2013.6634390 · Cited by 170
IGBT Junction Temperature Measurement via Peak Gate Current
Baker, N., Munk‐Nielsen, S., Iannuzzo, F., & Liserre, M. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2464714 · Cited by 166
An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs
Gonzalez, J. A. O., Alatise, O. M., Ji, H., Ran, L., & Mawby, P. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2631447 · Cited by 148
Condition Monitoring: A Decade of Proposed Techniques
Avenas, Y., Dupont, L., Baker, N., Zara, H., & Barruel, F. (2015) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2015.2481564 · Cited by 107
Perpiñà, X., Servière, J. F., Saiz, J., Barlini, D., Mermet-Guyennet, M., & Millán, J. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.078 · Cited by 104
Barlini, D., Ciappa, M., Castellazzi, A., Mermet-Guyennet, M., & Fichtner, W. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.058 · Cited by 92
Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics
Alghassi, A., Perinpanayagam, S., Samie, M., & Sreenuch, T. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2360662 · Cited by 78
Carrier mobility model for simulation of SiC-based electronic devices
Mnatsakanov, T. T., Levinshteĭn, M. E., Pomortseva, L. I., & Yurkov, S. N. (2002) · Semiconductor Science and Technology · doi:10.1088/0268-1242/17/9/313 · Cited by 67
Sensing Power MOSFET Junction Temperature Using Gate Drive Turn-On Current Transient Properties
Niu, H., & Lorenz, R. D. (2015) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2015.2497202 · Cited by 66
On-line Junction Temperature Measurement of CoolMOS Devices
Köenig, A., Plum, T., Fidler, P., & Doncker, R. W. D. (2007) · International Conference on Power Electronics and Drive Systems · doi:10.1109/peds.2007.4487683 · Cited by 66
Raman, M. S., Kifle, T., Bhattacharya, E., & Bhat, K. N. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.878020 · Cited by 62
Niu, H., & Lorenz, R. D. (2016) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2016.2614773 · Cited by 62
Ccoa, J. A. B., Strauss, B., Mitić, G., & Lindemann, A. (2014) · Cited by 56
Carubelli, S., & Khatir, Z. (2003) · Microelectronics Journal · doi:10.1016/s0026-2692(03)00205-2 · Cited by 54
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2013) · Annual Conference of the IEEE Industrial Electronics Society (IECON) · doi:10.1109/iecon.2013.6699260 · Cited by 50
Online junction temperature measurement via internal gate resistance during turn-on
Baker, N., Munk‐Nielsen, S., Liserre, M., & Iannuzzo, F. (2014) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2014.6911024 · Cited by 48
Sundaramoorthy, V. K., Bianda, E., Bloch, R., & Zurfluh, F. (2014) · Cited by 34
Eleffendi, M. A., & Johnson, C. M. (2015) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2015.7309265 · Cited by 33
Temperature Sensitive Electrical Parameters for Condition Monitoring in SiC Power MOSFETs
Gonzalez, J. A. O., Mawby, P., Ji, H., Ran, L., & Alatise, O. M. (2016) · IET International Conference on Power Electronics, Machines and Drives (PEMD) · doi:10.1049/cp.2016.0267 · Cited by 32
Sundaramoorthy, V. K., Bianda, E., Bloch, R., Angelosante, D., Nistor, I., Riedel, G. J., Zurfluh, F., Knapp, G., & Heinemann, A. (2014) · Microelectronics Reliability · doi:10.1016/j.microrel.2014.06.002 · Cited by 27
Niu, H., & Lorenz, R. D. (2015) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2015.7310460 · Cited by 25
Research works printed but not linked: 2
- kuhn, 2009, Online junction temperature measurement of IGBTs based on temperature sensitive electrical parameters, Proc 13th Eur Conf Power Electron Appl, 1
- brekel, 2009, Time resolved in situ Tvj measurements of 6.5kV IGBTs during inverter operation, Proc Power Convers Intell Motion Eur, 806
Cited by
Sorted by citations
Zeng, Z., Zhang, X., & Zhang, Z. (2019) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2019.2901655 · Cited by 165
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121
Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
Jiang, X., Wang, J., Yu, H., Chen, J., Zeng, Z., Yang, X., & Shen, Z. J. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3022390 · Cited by 119
Self-citationYang, F., Pu, S., Xu, C., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3009202 · Cited by 117
Intelligent Gate Drivers for Future Power Converters
Henn, J., Lüdecke, C., Laumen, M., Beushausen, S., Kalker, S., van der Broeck, C. H., Engelmann, G., & Doncker, R. W. D. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3112337 · Cited by 105
Metadata
- Authors
- Griffo, A., Wang, J., Colombage, K., & Kamel, T.
- Affiliations
- University of Sheffield (GB)
- Malvern Instruments, Ltd., Malvern, U.K.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2018-03
- Volume
- 65
- Issue
- 3
- Pages
- 2663-2671
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W2747182495
- Cited by
- 175
- References
- 33
- Citations by year
- 2026: 10 · 2025: 27 · 2024: 27 · 2023: 19 · 2022: 17 · 2021: 33 · 2020: 20 · 2019: 16 · 2018: 6
- FWCI
- 4.78
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Industrial Electronics (publishedVersion)
- White Rose Research Online (University of Leeds, The University of Sheffield, University of York) (acceptedVersion)
- Funders
- European Commission Horizon 2020 – Mobility for Growth Program (636170)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, junction temperature estimation, temperature-sensitive electrical parameters, online condition monitoring, threshold voltage, turn-on transient, on-state voltage
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
