The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs
Abstract
This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFETs devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-on transient characteristic (di/dt), the on-state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for di/dt. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.
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“The switching parameters like turnon delay time [90]-[92], turn-on di/dt [83], [93]-[95], turn-off delay time [70], [96], [97], and turn-off di/dt [95], are presented in the literature for junction temperature measurement of SiC MOSFETs.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
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“In [83], the parasitic impedance between the kelvin source and power source pins is used to measure the threshold voltage, which is suitable only for 4-pin devices.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
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Citations
Cites
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039
Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
Wang, H., Liserre, M., & Blaabjerg, F. (2013) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2013.2252958 · Cited by 919
Avenas, Y., Dupont, L., & Khatir, Z. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2178433 · Cited by 559
Oh, H., Han, B., McCluskey, P., Han, C., & Youn, B. D. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2346485 · Cited by 515
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
Roschke, M., & Schwierz, F. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.930664 · Cited by 359
Temperature measurements of semiconductor devices - a review
Blackburn, D. L. (2004) · doi:10.1109/stherm.2004.1291304 · Cited by 319
Luo, H., Chen, Y., Sun, P., Li, W., & He, X. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2481465 · Cited by 240
Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
Bryant, A. T., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P. J., & Palmer, P. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2125803 · Cited by 236
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2312427 · Cited by 232
Research works printed but not linked: 2
- kuhn, 2009, Online junction temperature measurement of IGBTs based on temperature sensitive electrical parameters, Proc 13th Eur Conf Power Electron Appl, 1
- brekel, 2009, Time resolved in situ Tvj measurements of 6.5kV IGBTs during inverter operation, Proc Power Convers Intell Motion Eur, 806
Cited by
Sorted by citations
Zeng, Z., Zhang, X., & Zhang, Z. (2019) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2019.2901655 · Cited by 165
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121
Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
Jiang, X., Wang, J., Yu, H., Chen, J., Zeng, Z., Yang, X., & Shen, Z. J. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3022390 · Cited by 119
Self-citationYang, F., Pu, S., Xu, C., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3009202 · Cited by 117
Intelligent Gate Drivers for Future Power Converters
Henn, J., Lüdecke, C., Laumen, M., Beushausen, S., Kalker, S., van der Broeck, C. H., Engelmann, G., & Doncker, R. W. D. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3112337 · Cited by 105
Metadata
- Authors
- Griffo, A., Wang, J., Colombage, K., & Kamel, T.
- Affiliations
- University of Sheffield (GB)
- Malvern Instruments, Ltd., Malvern, U.K.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2018-03
- Volume
- 65
- Issue
- 3
- Pages
- 2663-2671
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W2747182495
- Cited by
- 175
- References
- 33
- Citations by year
- 2026: 10 · 2025: 27 · 2024: 27 · 2023: 19 · 2022: 17 · 2021: 33 · 2020: 20 · 2019: 16 · 2018: 6
- FWCI
- 4.78
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Industrial Electronics (publishedVersion)
- White Rose Research Online (University of Leeds, The University of Sheffield, University of York) (acceptedVersion)
- Funders
- European Commission Horizon 2020 – Mobility for Growth Program (636170)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, junction temperature estimation, temperature-sensitive electrical parameters, online condition monitoring, threshold voltage, turn-on transient, on-state voltage
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