Cited by 175Silicon Carbide Semiconductor TechnologiesRadiation Effects in ElectronicsGaN-based semiconductor devices and materials

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Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo, Antonio, Wang, Jiabin, Colombage, Kalhana, Kamel, Tamer·2018·IEEE Transactions on Industrial Electronics

DOI 10.1109/tie.2017.2739687

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Abstract

This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFETs devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-on transient characteristic (di/dt), the on-state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for di/dt. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.

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Authors: Griffo, A., Wang, J., Colombage, K., & Kamel, T.
Affiliations: University of Sheffield (GB)
Malvern Instruments, Ltd., Malvern, U.K.
ORCID: Griffo, Antonio
Wang, Jiabin
Kamel, Tamer
Venue: IEEE Transactions on Industrial Electronics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Published: 2018-03
Volume: 65
Issue: 3
Pages: 2663-2671
ISSN: 0278-0046 (ISSN-L)
1557-9948
DOI: 10.1109/tie.2017.2739687
OpenAlex: W2747182495
Cited by: 175
References: 33
Citations by year: 2026: 10 · 2025: 27 · 2024: 27 · 2023: 19 · 2022: 17 · 2021: 33 · 2020: 20 · 2019: 16 · 2018: 6
FWCI: 4.78
Type: journal article
Language: en
Open access: closed
Licence: ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
doi.org/10.15223/policy-029 (stm-asf)
doi.org/10.15223/policy-037 (stm-asf)
Locations: IEEE Transactions on Industrial Electronics (publishedVersion)
White Rose Research Online (University of Leeds, The University of Sheffield, University of York) (acceptedVersion)
Funders: European Commission Horizon 2020 – Mobility for Growth Program (636170)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Keywords: SiC MOSFET, junction temperature estimation, temperature-sensitive electrical parameters, online condition monitoring, threshold voltage, turn-on transient, on-state voltage

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Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

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