Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach
Abstract
Accurate information of the junction temperature of SiC power mosfets ensures safe operation and helps reliability assessment of the devices. In this paper, an online junction temperature extraction method is proposed based on the electroluminescence phenomenon of the body diode of SiC power mosfets. It is found that during the forward conduction interval of the body diode, visible blue light is emitted around the chip, which ascribes to the radiative recombination in the low doped region of SiC mosfets. Experimental results suggest the light intensity changes linearly with the variation of the temperature and behaves as a temperature sensitive optic parameter (TSOP). Further, an electro-thermal-optic model is proposed to reveal the relationship between the electroluminescence intensity, forward current, and junction temperature. Based on the TSOP, an online junction temperature extraction method is proposed for SiC mosfets and verified in an SiC mosfet based inverter. Compared with state-of-the-art methods, the proposed junction temperature measurement method is contactless and immune from the aging of the package.
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Junction temperature can be monitored directly by optical sensors and integrated on-chip sensors.
“Junction temperature can be monitored directly by optical sensors [80] and integrated on-chip sensors [81].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [80]
Optical and integrated on-chip sensor techniques are considered invasive and expensive.
“However, these techniques are considered invasive and expensive.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [80]
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Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
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AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
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- Authors
- Li, C., Luo, H., Li, C., Li, W., Yang, H., & He, X.
- Affiliations
- University of Illinois Urbana-Champaign (US)
- Zhejiang University (CN)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2019-10
- Volume
- 34
- Issue
- 10
- Pages
- 10143-10152
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2909888246
- Cited by
- 59
- References
- 30
- Citations by year
- 2026: 7 · 2025: 9 · 2024: 9 · 2023: 16 · 2022: 4 · 2021: 9 · 2020: 2 · 2019: 3
- FWCI
- 1.62
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- National Basic Research Program of China (2017YFE0112400)
- National Nature Science Foundations of China (51677166, 51877192)
- Zhejiang Provincial Natural Science Foundation (LR16E070001)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Keywords
- SiC power MOSFETs, electroluminescence, body diode, radiative recombination, non-contact temperature measurement, SiC inverter, device reliability
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