Yu, Shimeng
Georgia Institute of Technology
28 papers on CoChatORCID 0000-0002-0068-3652
Most cited papers
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Metal–Oxide RRAM
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 2,757
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Neuro-Inspired Computing With Emerging Nonvolatile Memorys
Yu, S. (2018) · Proceedings of the IEEE
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 1,170
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Neuro-inspired computing chips
Zhang, W., Gao, B., Tang, J., Yao, P., Yu, S., Chang, M.-F., Yoo, H.-J., Qian, H., & Wu, H. (2020) · Nature Electronics
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 892
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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
Yu, S., Wu, Y., Jeyasingh, R., Kuzum, D., & Wong, H.-S. P. (2011) · IEEE Transactions on Electron Devices
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 805
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SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Choi, S., Tan, S. H., Li, Z., Kim, Y., Choi, C., Chen, P.-Y., Yeon, H., Yu, S., & Kim, J. (2018) · Nature Materials
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 690
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Ferroelectric FET analog synapse for acceleration of deep neural network training
Jerry, M., Chen, P.-Y., Zhang, J., Sharma, P., Ni, K., Yu, S., & Datta, S. (2017) · 2017 IEEE International Electron Devices Meeting (IEDM)
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 599
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On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 355
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Overcoming the challenges of crossbar resistive memory architectures
Xu, C., Niu, D., Muralimanohar, N., Balasubramonian, R., Zhang, T., Yu, S., & Xie, Y. (2015) · 2015 IEEE 21st International Symposium on High Performance Computer Architecture (HPCA)
Advanced Memory and Neural ComputingParallel Computing and Optimization Techniques
Cited by 340
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DNN+NeuroSim V2.0: An End-to-End Benchmarking Framework for Compute-in-Memory Accelerators for On-Chip Training
Peng, X., Huang, S., Jiang, H., Lu, A., & Yu, S. (2021) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 317
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Improving Analog Switching in HfO x -Based Resistive Memory With a Thermal Enhanced Layer
Wu, W., Wu, H., Gao, B., Deng, N., Yu, S., & Qian, H. (2017) · IEEE Electron Device Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 282
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A 65nm 4Kb algorithm-dependent computing-in-memory SRAM unit-macro with 2.3ns and 55.8TOPS/W fully parallel product-sum operation for binary DNN edge processors
Khwa, W.-S., Chen, J.-J., Li, J.-F., Si, X., Yang, E.-Y., Sun, X., Liu, R., Chen, P.-Y., Li, Q., Yu, S., et al. (2018) · 2018 IEEE International Solid - State Circuits Conference - (ISSCC)
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 260
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XNOR-RRAM: A scalable and parallel resistive synaptic architecture for binary neural networks
Sun, X., Yin, S., Peng, X., Liu, R., Seo, J.-S., & Yu, S. (2018) · 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 246
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Binary neural network with 16 Mb RRAM macro chip for classification and online training
Yu, S., Li, Z., Chen, P.-Y., Wu, H., Gao, B., Wang, D., Wu, W., & Qian, H. (2016) · 2016 IEEE International Electron Devices Meeting (IEDM)
Advanced Memory and Neural ComputingAdvanced Neural Network Applications
Cited by 219
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A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
Yu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting
Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing
Cited by 213
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A Methodology to Improve Linearity of Analog RRAM for Neuromorphic Computing
Wu, W., Wu, H., Gao, B., Yao, P., Zhang, X., Peng, X., Yu, S., & Qian, H. (2018) · 2018 IEEE Symposium on VLSI Technology
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 197
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15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips
Su, J.-W., Si, X., Chou, Y.-C., Chang, T.-W., Huang, W.-H., Tu, Y.-N., Liu, R., Lu, P.-J., Liu, T.-W., Wang, J.-H., et al. (2020) · 2020 IEEE International Solid- State Circuits Conference - (ISSCC)
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 189
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Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
Gao, B., Bi, Y., Chen, H.-Y., Liu, R., Huang, P., Chen, B., Liu, L., Liu, X., Yu, S., Wong, H.-S. P., et al. (2014) · ACS Nano
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 188
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High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS
Yin, S., Sun, X., Yu, S., & Seo, J.-S. (2020) · IEEE Transactions on Electron Devices
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 171
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Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks
Sun, X., & Yu, S. (2019) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 170
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HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
Chen, H.-Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 144
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Three-Dimensional nand Flash for Vector–Matrix Multiplication
Wang, P., Xu, F., Wang, B., Gao, B., Wu, H., Qian, H., & Yu, S. (2019) · IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Advanced Memory and Neural ComputingLow-power high-performance VLSI design
Cited by 132
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Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory Arrays
Liu, R., Wu, H., Pang, Y., Qian, H., & Yu, S. (2015) · IEEE Electron Device Letters
Physical Unclonable Functions (PUFs) and Hardware SecurityAdvanced Memory and Neural Computing
Cited by 132
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Investigation of statistical retention of filamentary analog RRAM for neuromophic computing
Zhao, M., Wu, H., Gao, B., Zhang, Q., Wu, W., Wang, S., Xi, Y., Wu, D., Deng, N., Yu, S., et al. (2017) · 2017 IEEE International Electron Devices Meeting (IEDM)
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 95
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A 40-nm MLC-RRAM Compute-in-Memory Macro With Sparsity Control, On-Chip Write-Verify, and Temperature-Independent ADC References
Li, W., Sun, X., Huang, S., Jiang, H., & Yu, S. (2022) · IEEE Journal of Solid-State Circuits
Advanced Memory and Neural ComputingAdvanced Neural Network Applications
Cited by 77
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