The DOI matches its Crossref record; 31 of the 31 references it cites were found in a registry or an index.
Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure
Abstract
The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and electroforming‐free characteristics is an impending task for the development of resistance switching random access memory. In this work, a two‐layered dielectric structure consisting of HfO 2 and Ta 2 O 5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration. The HfO 2 layer works as the resistance switching layer by trapping or detrapping of electronic carriers, whereas the Ta 2 O 5 layer remains intact during the whole switching cycle, which provides the rectification. With the optimized structure and operation conditions for the given materials, excellent RS uniformity, electroforming‐free, and self‐rectifying functionality could be simultaneously achieved from the Pt/Ta 2 O 5/HfO 2/TiN structure.
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In the citing paper
“It has a low current analog operation capability and electroforming-free characteristics, allowing high reliability and uniformity.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [24]
In the citing paper
“the self-rectifying characteristics of the device enable large-array operation without complex transistor or selector processes”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [24]
In the citing paper
“the device is highly compatible with the conventional CMOS process.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [24]
In the citing paper
“A charge trap memristor (CTM) is an attractive candidate for the memristor cell of the MCA, because the embodied rectifying characteristic frees it from the sneak current issue.”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [4]
In the citing paper
“In this regard, charge trap memristors (CTM) are promising memristive systems due to their inherent forming‐free and self‐rectifying characteristics.[ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [4]
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Self-citation
Metadata
- Authors
- Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S.
- Affiliations
- Seoul National University (KR)
- Corresponding author
- Hwang, Cheol Seong
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2014-05-26
- Volume
- 24
- Issue
- 32
- Pages
- 5086-5095
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2167342413
- Cited by
- 277
- References
- 31
- Citations by year
- 2026: 17 · 2025: 34 · 2024: 30 · 2023: 27 · 2022: 21 · 2021: 26 · 2020: 23 · 2019: 23 · 2018: 21 · 2017: 15 · 2016: 22 · 2015: 17 · 2014: 1
- FWCI
- 9.74
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Advanced Functional Materials (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive random access memory, electroforming-free switching, hafnium oxide, tantalum pentoxide, TiN electrodes, platinum electrode, carrier trapping and detrapping, random access memory
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