Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

High-κ gate dielectrics: Current status and materials properties considerations

Wilk, G. D., Wallace, R. M., & Anthony, J. M. (2001) · Journal of Applied Physics · doi:10.1063/1.1361065 · Cited by 5,905

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929

Complementary resistive switches for passive nanocrossbar memories

Linn, E., Rosezin, R., Kügeler, C., & Waser, R. M. (2010) · Nature Materials · doi:10.1038/nmat2748 · Cited by 1,286

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S. M., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R. M., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,149

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 643

High-Density Crossbar Arrays Based on a Si Memristive System

Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Gavartin, J. L., Ramo, D. M., Shluger, A. L., Bersuker, G. I., & Lee, B. H. (2006) · Applied Physics Letters · doi:10.1063/1.2236466 · Cited by 354

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Son, M., Lee, J., Park, J., Shin, J., Choi, G., Jung, S., Lee, W., Kim, S., Park, S., & Hwang, H. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2163697 · Cited by 304

An artificial nociceptor based on a diffusive memristor

Yoon, J. H., Wang, Z., Kim, K. M., Wu, H., Ravichandran, V., Xia, Q., Hwang, C. S., & Yang, J. J. (2018) · Nature Communications · doi:10.1038/s41467-017-02572-3 · Cited by 531

All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

Hu, L., Yang, J., Wang, J., Cheng, P., Chua, L. O., & Zhuge, F. (2020) · Advanced Functional Materials · doi:10.1002/adfm.202005582 · Cited by 467

Memristors for Energy‐Efficient New Computing Paradigms

Jeong, D. S., Kim, K. M., Kim, S., Choi, B. J., & Hwang, C. S. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201600090 · Cited by 419

Prospective of Semiconductor Memory Devices: from Memory System to Materials

Hwang, C. S. (2015) · Advanced Electronic Materials · doi:10.1002/aelm.201400056 · Cited by 251

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01781 · Cited by 246

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

Jeong, D. S., & Hwang, C. S. (2018) · Advanced Materials · doi:10.1002/adma.201704729 · Cited by 247

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220

Nociceptive Memristor

Kim, Y., Kwon, Y. J., Kwon, D. E., Yoon, K. J., Yoon, J. H., Yoo, S., Kim, H. J., Park, T. H., Han, J., Kim, K. M., et al. (2018) · Advanced Materials · doi:10.1002/adma.201704320 · Cited by 217

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large‐Scale Circuits

Huang, P. C., Kang, J., Zhao, Y., Chen, S., Han, R., Zhou, Z., Chen, Z., Ma, W., Li, M., Liu, L., et al. (2016) · Advanced Materials · doi:10.1002/adma.201602418 · Cited by 212

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices

Wang, H., Du, Y., Li, Y., Zhu, B., Leow, W. R., Li, Y., Pan, J., Wu, T., & Chen, X. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201501389 · Cited by 207

Memristive Crossbar Arrays for Storage and Computing Applications

Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Park, M. H., Kim, H., Kim, Y. J., Lee, Y. H., Moon, T., Kim, K. D., Hyun, S. D., & Hwang, C. S. (2015) · Applied Physics Letters · doi:10.1063/1.4935588 · Cited by 185

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials · doi:10.1002/adma.201501167 · Cited by 175

A Highly Transparent Artificial Photonic Nociceptor

Kumar, M., Kim, H., & Kim, J. (2019) · Advanced Materials · doi:10.1002/adma.201900021 · Cited by 168

Competing memristors for brain-inspired computing

Kim, S. J., Kim, S., & Jang, H. W. (2020) · iScience · doi:10.1016/j.isci.2020.101889 · Cited by 150

Roadmap to neuromorphic computing with emerging technologies

Mehonić, A., Ielmini, D., Roy, K., Mutlu, O., Kvatinsky, S., Serrano‐Gotarredona, T., Linares-Barranco, B., Spiga, S., Savel'ev, S. E., Balanov, A. G., et al. (2024) · APL Materials · doi:10.1063/5.0179424 · Cited by 163

Optically driven intelligent computing with ZnO memristor

Yang, J., Hu, L., Shen, L., Wang, J., Cheng, P., Lu, H., Zhuge, F., & Ye, Z. (2022) · Fundamental Research · doi:10.1016/j.fmre.2022.06.019 · Cited by 137

Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

Yao, Z., Pan, L., Liu, L., Zhang, J., Lin, Q., Ye, Y., Zhang, Z., Xiang, S., & Chen, B. (2019) · Science Advances · doi:10.1126/sciadv.aaw4515 · Cited by 132

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

Sokolov, A. S., Jeon, Y.-R., Kim, S., Ku, B., Lim, D.-H., Han, H., Chae, M. G., Lee, J., Ha, B. G., & Choi, C. (2017) · Applied Surface Science · doi:10.1016/j.apsusc.2017.11.016 · Cited by 127

A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

Choi, S., Jang, S., Moon, J., Kim, J. C., Jeong, H. Y., Jang, P.-H., Lee, K., & Wang, G. (2018) · NPG Asia Materials · doi:10.1038/s41427-018-0101-y · Cited by 130

Voltage divider effect for the improvement of variability and endurance of TaOx memristor

Kim, K. M., Yang, J. J., Strachan, J. P., Grafals, E. M., Ge, N., Dávila, N., Li, Z., & Williams, R. S. (2016) · Scientific Reports · doi:10.1038/srep20085 · Cited by 131

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films

Park, M. H., Kim, H. J., Kim, Y. J., Moon, T., Kim, K. D., Lee, Y. H., Hyun, S. D., & Hwang, C. S. (2015) · Journal of Materials Chemistry C · doi:10.1039/c5tc01074h · Cited by 124

Memristive Devices for New Computing Paradigms

Im, I. H., Kim, S. J., & Jang, H. W. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000105 · Cited by 120

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Zhang, X., Xu, L., Zhang, H., Liu, J., Tan, D., Chen, L., Ma, Z., & Li, W. (2020) · Nanoscale Research Letters · doi:10.1186/s11671-019-3229-y · Cited by 107

Bipolar Resistive Switching in TiO 2 Artificial Synapse Mimicking Pavlov’s Associative Learning

Jena, A. K., Sahu, M. C., Mohanan, K. U., Mallik, S. K., Sahoo, S., Pradhan, G. K., & Sahoo, S. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c17228 · Cited by 111

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Kim, S., Jung, S., Kim, M., Chen, Y., Chang, Y., Ryoo, K., Cho, S., Lee, J., & Park, B. (2018) · Small · doi:10.1002/smll.201704062 · Cited by 103

Vertically Aligned WS 2 Layers for High‐Performing Memristors and Artificial Synapses

Kumar, M., Ban, D., Kim, S. M., Kim, J., & Wong, C. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201900467 · Cited by 100

A Low‐Current and Analog Memristor with Ru as Mobile Species

Yoon, J. H., Zhang, J., Lin, P., Upadhyay, N. K., Yan, P., Liu, Y., Xia, Q., & Yang, J. J. (2020) · Advanced Materials · doi:10.1002/adma.201904599 · Cited by 96

Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing

Ren, S., Dong, A., Yang, L., Xue, Y., Li, J., Yu, Y., Zhou, H., Zuo, W., Li, Y., Cheng, W., et al. (2024) · Advanced Materials · doi:10.1002/adma.202307218 · Cited by 96

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Yoon, J. H., Zhang, J., Ren, X., Wang, Z., Wu, H., Li, Z., Barnell, M., Wu, Q., Lauhon, L. J., Xia, Q., et al. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201702010 · Cited by 95

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Yoon, K. J., Kim, Y., & Hwang, C. S. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800914 · Cited by 97

Time-varying data processing with nonvolatile memristor-based temporal kernel

Jang, Y. H., Kim, W., Kim, J., Woo, K. S., Lee, H. J., Jeon, J. W., Shim, S. K., Han, J., & Hwang, C. S. (2021) · Nature Communications · doi:10.1038/s41467-021-25925-5 · Cited by 94

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Liu, C.-F., Tang, X., Wang, L.-Q., Tang, H., Jiang, Y., Liu, Q., Li, W., & Tang, Z. (2019) · Nanomaterials · doi:10.3390/nano9081124 · Cited by 90

Electronic resistance switching in the Al/TiO x /Al structure for forming-free and area-scalable memory

Shao, X. L., Zhou, L., Yoon, K. J., Jiang, H., Zhao, J., Zhang, K., Yoo, S., & Hwang, C. S. (2015) · Nanoscale · doi:10.1039/c4nr06417h · Cited by 88

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abbas, H., Li, J., & Ang, D. S. (2022) · Micromachines · doi:10.3390/mi13050725 · Cited by 87

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Luo, Q., Zhang, X., Hu, Y., Gong, T., Xu, X., Yuan, P., Ma, H., Dong, D., Lv, H., Long, S., et al. (2018) · IEEE Electron Device Letters · doi:10.1109/led.2018.2821162 · Cited by 89

Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing

Ryu, J.-H., & Kim, S. (2020) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2020.110236 · Cited by 87

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure

Zhao, J., Zhang, M., Wan, S., Yang, Z., & Hwang, C. S. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b16214 · Cited by 85

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory

Li, X., Yang, J.-G., Ma, H.-P., Liu, Y., Ji, Z., Huang, W., Ou, X., Zhang, D. W., & Lü, H.-L. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.0c06476 · Cited by 83

Artificial Neural Networks Based on Memristive Devices: From Device to System

Huang, H.-M., Wang, Z., Wang, T., Xiao, Y., & Guo, X. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000149 · Cited by 82

Enhanced resistive switching in all-printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer

Siddiqui, G. U., Rehman, M. M., & Choi, K. H. (2016) · Polymer · doi:10.1016/j.polymer.2016.07.081 · Cited by 74

Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching

Ismail, M., Rahmani, M. K., Khan, S. A., Choi, J., Hussain, F. A., Batool, Z., Rana, A. M., Lee, J., Cho, H., & Kim, S. (2019) · Applied Surface Science · doi:10.1016/j.apsusc.2019.143833 · Cited by 75

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly

Frascaroli, J., Brivio, S., Lupi, F. F., Seguini, G., Boarino, L., Perego, M., & Spiga, S. (2015) · ACS Nano · doi:10.1021/nn505131b · Cited by 74

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

Kim, G., Son, S., Song, H., Jeon, J. B., Lee, J., Cheong, W. H., Choi, S., & Kim, K. M. (2023) · Advanced Science · doi:10.1002/advs.202205654 · Cited by 72

A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

Wang, W., Wang, R., Shi, T., Wei, J., Cao, R., Zhao, X., Wu, Z., Zhang, X., Lü, J., Xu, H. F., et al. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2929240 · Cited by 75

Tunable stochastic memristors for energy-efficient encryption and computing

Woo, K. S., Han, J., Yi, S., Thomas, L., Park, H., Kumar, S., & Hwang, C. S. (2024) · Nature Communications · doi:10.1038/s41467-024-47488-x · Cited by 77

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Ryu, H., & Kim, S. (2020) · Nanomaterials · doi:10.3390/nano10112159 · Cited by 70

Nanoscale memristor devices: materials, fabrication, and artificial intelligence

Yu, Y., Xiao, M. W., Fieser, D., Zhou, W., & Hu, A. (2024) · Journal of Materials Chemistry C · doi:10.1039/d3tc04510b · Cited by 70

Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration

Kim, Y. S., Baek, J. H., Im, I. H., Lee, D. H., Park, M. H., & Jang, H. W. (2024) · ACS Nano · doi:10.1021/acsnano.4c12884 · Cited by 71

Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor

Sung, J. H., Park, J. H., Jeon, D. S., Kim, D., Yu, M. J., Khot, A. C., Dongale, T. D., & Kim, T. G. (2021) · Materials & Design · doi:10.1016/j.matdes.2021.109845 · Cited by 68

Strategic Development of Memristors for Neuromorphic Systems: Low‐Power and Reconfigurable Operation

Lee, J. W., Han, J., Kang, B., Hong, Y. J., Lee, S., & Jeon, I. (2025) · Advanced Materials · doi:10.1002/adma.202413916 · Cited by 69

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

Kim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b16499 · Cited by 64

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Woo, K. S., Wang, Y., Kim, J., Kim, Y., Kwon, Y. J., Yoon, J. H., Kim, W., & Hwang, C. S. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800543 · Cited by 64

MOF‐Based Sustainable Memory Devices

Kulachenkov, N. K., Haar, Q., Shipilovskikh, S. A., Yankin, A. N., Pierson, J. F., Nominé, A., & Milichko, V. A. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202107949 · Cited by 61

Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer through Redox-Induced Trap-Controlled Conduction

Chen, W., Cheng, C.-H., Lin, P., Tseng, Y., Chang, T., & Chen, J. (2019) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.9b00572 · Cited by 63

3D resistive RAM cell design for high-density storage class memory—a review

Hudec, B., Hsu, C.-W., Wang, I., Lai, W.-L., Chang, C., Wang, T., Fröhlich, K., Ho, C., Lin, C.-H., & Hou, T. (2016) · Science China Information Sciences · doi:10.1007/s11432-016-5566-0 · Cited by 60

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

Akbari, M. K., Hu, J., Verpoort, F., Lü, H.-L., & Zhuiykov, S. (2020) · Nano-Micro Letters · doi:10.1007/s40820-020-00419-z · Cited by 62

Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

Ryu, H., & Kim, S. (2021) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2021.111223 · Cited by 62

Controllable digital resistive switching for artificial synapses and pavlovian learning algorithm

Kumar, M., Abbas, S., Lee, J., & Kim, J. (2019) · Nanoscale · doi:10.1039/c9nr02027f · Cited by 60

In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application

Xu, N., Park, T., Yoon, K. J., & Hwang, C. S. (2021) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.202100208 · Cited by 59

Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

Bousoulas, P., Asenov, P., Karageorgiou, I., Sakellaropoulos, D., Stathopoulos, S., & Tsoukalas, D. (2016) · Journal of Applied Physics · doi:10.1063/1.4964872 · Cited by 59

Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor

Jeon, J. H., Joo, H., Kim, Y., Lee, D. H., Kim, J., Kim, Y. S., Choi, T., & Park, B. H. (2016) · Scientific Reports · doi:10.1038/srep23299 · Cited by 55

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta 2 O 5 /HfO 2– x Structure with a Sub-μm 2 Cell Area

Yoon, J. H., Yoo, S., Song, S. J., Yoon, K. J., Kwon, D. E., Kwon, Y. J., Park, T. H., Kim, H. J., Shao, X. L., Kim, Y., et al. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b05657 · Cited by 54

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

Li, J., Abbas, H., Ang, D. S., Ali, A., & Ju, X. (2023) · Nanoscale Horizons · doi:10.1039/d3nh00180f · Cited by 52

Resistive switching in microscale anodic titanium dioxide-based memristors

Aglieri, V., Zaffora, A., Lullo, G., Santamaria, M., Franco, F. D., Cicero, U. L., Mosca, M., & Macaluso, R. (2017) · Superlattices and Microstructures · doi:10.1016/j.spmi.2017.10.031 · Cited by 52

The current limit and self-rectification functionalities in the TiO 2 /HfO 2 resistive switching material system

Yoon, J. H., Kwon, D. E., Kim, Y., Kwon, Y. J., Yoon, K. J., Park, T. H., Shao, X. L., & Hwang, C. S. (2017) · Nanoscale · doi:10.1039/c7nr02215h · Cited by 51

Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage

Qi, M., Tao, Y., Wang, Z., Xu, H., Zhao, X., Liu, W. Y. X., Ma, J., & Liu, Y. (2018) · Applied Surface Science · doi:10.1016/j.apsusc.2018.07.095 · Cited by 51

A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors

Xu, N., Park, T. G., Kim, H. J., Shao, X., Yoon, K. J., Park, T. H., Fang, L., Kim, K. M., & Hwang, C. S. (2019) · Advanced Intelligent Systems · doi:10.1002/aisy.201900082 · Cited by 49

Spatiotemporal Data Processing with Memristor Crossbar‐Array‐Based Graph Reservoir

Jang, Y. H., Lee, S. H., Han, J., Kim, W., Shim, S. K., Cheong, S., Woo, K. S., Han, J., & Hwang, C. S. (2023) · Advanced Materials · doi:10.1002/adma.202309314 · Cited by 51

Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories

Zhang, K., Ren, Y. J., Ganesh, P., & Cao, Y. (2022) · npj Computational Materials · doi:10.1038/s41524-022-00770-2 · Cited by 49

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Oh, S.-I., Rani, J. R., Hong, S., & Jang, J. (2017) · Nanoscale · doi:10.1039/c7nr01840a · Cited by 48

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

Qiu, J.-T. T., Samanta, S., Dutta, M., Ginnaram, S., & Maikap, S. (2019) · Langmuir · doi:10.1021/acs.langmuir.8b04090 · Cited by 46

Self-Rectifying Al 2 O 3 /TaO x Memristor With Gradual Operation at Low Current by Interfacial Layer

Zhao, X., Zhang, K., Hu, K., Zhang, Y., Zhou, Q., Wang, Z., She, Y., Zhang, Z., & Wang, F. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3120701 · Cited by 47

Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

Lim, H., Ahn, H.-W., Kornijčuk, V., Kim, G., Seok, J. Y., Kim, I., Hwang, C. S., & Jeong, D. S. (2016) · Nanoscale · doi:10.1039/c6nr01278g · Cited by 46

Low voltage and robust InSe memristor using van der Waals electrodes integration

Li, Q., Tao, Q., Chen, Y., Kong, L., Shu, Z., Duan, H., Liao, L., & Liu, Y. (2021) · International Journal of Extreme Manufacturing · doi:10.1088/2631-7990/ac2296 · Cited by 46

SiO 2 /Ta 2 O 5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity

Guo, X., Wang, Q., Lv, X., Yang, H., Sun, K., Yang, D., Zhang, H., Hasegawa, T., & He, D. (2020) · Nanoscale · doi:10.1039/c9nr09845c · Cited by 46

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Lee, Y., Jeon, B., Cho, Y., Kim, J., Shim, W., & Kim, S. (2024) · Advanced Materials Technologies · doi:10.1002/admt.202400585 · Cited by 47

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Ryu, H., & Kim, S. (2020) · Nanomaterials · doi:10.3390/nano10081550 · Cited by 44

Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference

Kim, J. P., Kim, S. K., Park, S., Kuk, S., Kim, T.-Y., Kim, B. H., Ahn, S., Cho, Y., Jeong, Y., Choi, S., et al. (2023) · Nano Letters · doi:10.1021/acs.nanolett.2c03453 · Cited by 44

Demonstration of Neuromodulation‐inspired Stashing System for Energy‐efficient Learning of Spiking Neural Network using a Self‐Rectifying Memristor Array

Cheong, W. H., Jeon, J. B., In, J. H., Kim, G., Song, H., An, J., Park, J., Kim, Y. S., Hwang, C. S., & Kim, K. M. (2022) · Advanced Functional Materials · doi:10.1002/adfm.202200337 · Cited by 41

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Rasheed, U., Ryu, H., Mahata, C., Khalil, R. M. A., Imran, M., Rana, A. M., Kousar, F., Kim, B., Kim, Y., Cho, S., et al. (2021) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2021.160204 · Cited by 41

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures

Jiang, H., Li, X. Y., Chen, R., Shao, X. L., Yoon, J. H., Hu, X., Hwang, C. S., & Zhao, J. (2016) · Scientific Reports · doi:10.1038/srep22216 · Cited by 43

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Shen, Z., Zhao, C., Zhao, T., Xu, W., Liu, Y., Qi, Y., Mitrović, I. Z., Yang, L., & Zhao, C. (2021) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.0c01094 · Cited by 41

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Ghenzi, N., Park, T. W., Kim, S. S., Kim, H. J., Jang, Y. H., Woo, K. S., & Hwang, C. S. (2023) · Nanoscale Horizons · doi:10.1039/d3nh00493g · Cited by 41

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Han, X., Xu, Y., Sun, B., Xu, R., Xu, J. L., Wang, H., Fu, Z., Zhu, H. S., Sun, X., Chang, J., et al. (2022) · Applied Physics Letters · doi:10.1063/5.0082538 · Cited by 40

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Mohanty, S. K., Panda, D., Reddy, K. P. K., Lee, P.-T., Wu, C., & Chang, K. (2023) · Ceramics International · doi:10.1016/j.ceramint.2023.02.052 · Cited by 38

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Zaffora, A., Quarto, F. D., Habazaki, H., Valov, I., & Santamaria, M. (2018) · Faraday Discussions · doi:10.1039/c8fd00112j · Cited by 38

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Jang, Y. H., Han, J., Kim, J., Kim, W., Woo, K. S., Kim, J., & Hwang, C. S. (2022) · Advanced Materials · doi:10.1002/adma.202209503 · Cited by 36

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Chou, C.-T., Hudec, B., Hsu, C.-W., Lai, W.-L., Chang, C.-C., & Hou, T. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.04.002 · Cited by 36

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Ma, H., Zhang, X., Wu, F., Luo, Q., Gong, T., Yuan, P., Xu, X., Liu, Y., Zhao, S., Zhang, K., et al. (2018) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2883192 · Cited by 35

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Zaffora, A., Macaluso, R., Habazaki, H., Valov, I., & Santamaria, M. (2018) · Electrochimica Acta · doi:10.1016/j.electacta.2018.04.087 · Cited by 35

Nociceptors: Their Role in Body’s Defenses, Tissue Specific Variations and Anatomical Update

Nikolenko, V. N., Shelomentseva, E. M., Tsvetkova, M. M., Abdeeva, E. I., Giller, D. B., Babayeva, J. V., Achkasov, E. E., Gavryushova, L. V., & Sinelnikov, M. Y. (2022) · Journal of Pain Research · doi:10.2147/jpr.s348324 · Cited by 34

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Ge, N., Yoon, J. H., Hu, M., Grafals, E. M., Dávila, N., Strachan, J. P., Li, Z., Holder, H., Xia, Q., Williams, R. S., et al. (2017) · Scientific Reports · doi:10.1038/srep40135 · Cited by 34

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Li, L., Chen, Y., Cai, C., Ma, P., Ji, H., & Zou, G. (2021) · Small · doi:10.1002/smll.202103881 · Cited by 33

Anomalous rectification in a purely electronic memristor

Wang, J., Pan, R., Cao, H., Wang, Y., Liang, L., Zhang, H., Gao, J., & Zhuge, F. (2016) · Applied Physics Letters · doi:10.1063/1.4963887 · Cited by 32

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Chakrabarti, S., Panja, R., Roy, S., Roy, A., Samanta, S., Dutta, M., Ginnaram, S., Maikap, S., Cheng, H.-M., Tsai, L.-N., et al. (2017) · Applied Surface Science · doi:10.1016/j.apsusc.2017.10.072 · Cited by 32

Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Mullani, N. B., Ali, I., Dongale, T. D., Kim, G. H., Choi, B. J., Basit, M. A., & Park, T. J. (2019) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2019.104907 · Cited by 32

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Wang, J., Zhuge, X., & Zhuge, F. (2021) · Science and Technology of Advanced Materials · doi:10.1080/14686996.2021.1911277 · Cited by 34

Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor

Ni, R., Yang, L., Huang, X.-D., Ren, S.-G., Wan, T.-Q., Li, Y., & Miao, X.-S. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3106234 · Cited by 31

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Ma, H., Feng, J., Lv, H., Gao, T., Xu, X., Luo, Q., Gong, T., & Yuan, P. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-017-1905-3 · Cited by 24

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta 2 O 5 /HfO 2– x Structure with a Sub-μm 2 Cell Area

Yoon, J. H., Yoo, S., Song, S. J., Yoon, K. J., Kwon, D. E., Kwon, Y. J., Park, T. H., Kim, H. J., Shao, X. L., Kim, Y., et al. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b05657 · Cited by 54

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Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F. (2015) · Nanoscale · doi:10.1039/c4nr06406b · Cited by 113

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Yoon, J. H., Kwon, D. E., Kim, Y., Kwon, Y. J., Yoon, K. J., Park, T. H., Shao, X. L., & Hwang, C. S. (2017) · Nanoscale · doi:10.1039/c7nr02215h · Cited by 51

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Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials · doi:10.1002/adma.201501167 · Cited by 175