The DOI matches its Crossref record; 44 of the 44 references it cites were found in a registry or an index.
Bottom-Up Nanofabrication with Extreme-Ultraviolet Light: Metal–Organic Frameworks on Patterned Monolayers
Open accessAbstract
The fabrication of integrated circuits with ever smaller (sub-10 nm) features poses fundamental challenges in chemistry and materials science. As smaller nanostructures are fabricated, thinner layers of materials are required, and surfaces and interfaces gain a more important role in the formation of nanopatterns. We present a new bottom-up approach in which we use the high optical resolution offered by extreme ultraviolet (EUV) lithography to print patterns on self-assembled monolayers (SAMs). Upon radiation, low-energy electrons induce chemical changes in the SAM so that the projected image is transferred to the substrate surface. We use the chemical differences between exposed and unexposed regions to promote a selective growth of hybrid structures that can act as an etch-resistant layer for further pattern transfer or can be used as functional nanostructures. The EUV doses required to promote selective growth on exposed areas are close to industrial requirements. Furthermore, this method allows for the independent tuning of different steps in the EUV lithography process (photo-induced chemistry, spatially resolved chemical contrast, and formation of nanopatterns), an advantage over current resists, in which the same material plays all roles.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
MOF thickness can be controlled and scaled down.
“MOFs, whose thickness can be controlled and scaled down, have shown promising results 74 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [74]
In Step 3: SURMOF Growth (page unavailable), the paper reports that film thickness varies with EUV dose and discusses growth parameters that may affect it. This supports the possibility of influencing thickness, but the paper demonstrates nanoscale pattern widths, not that MOF thickness itself was deliberately scaled down. (LLM, conf=0.80)
Experimental — accuracy not yet measured
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Henke, B. L., Gullikson, E. M., & Davis, J. C. (1993) · Atomic Data and Nuclear Data Tables · doi:10.1006/adnd.1993.1013 · Cited by 6,386
Self-assembled monolayers of thiols and dithiols on gold: new challenges for a well-known system
Vericat, C., Vela, M. E., Benitez, G. A., Carro, P., & Salvarezza, R. C. (2010) · Chemical Society Reviews · doi:10.1039/b907301a · Cited by 1,476
Patterning self-assembled monolayers
Smith, R. K., Lewis, P. A., & Weiss, P. S. (2004) · Progress in Surface Science · doi:10.1016/j.progsurf.2003.12.001 · Cited by 815
Chemical functionality in self-assembled monolayers: structural and electrochemical properties
Chidsey, C. E. D., & Loiacono, D. N. (1990) · Langmuir · doi:10.1021/la00093a026 · Cited by 640
Bradshaw, D., Garai, A., & Huo, J. (2011) · Chemical Society Reviews · doi:10.1039/c1cs15276a · Cited by 600
Biemmi, E., Scherb, C., & Bein, T. (2007) · Journal of the American Chemical Society · doi:10.1021/ja0701208 · Cited by 536
Tanuma, S., Powell, C. J., & Penn, D. R. (1993) · Surface and Interface Analysis · doi:10.1002/sia.740200112 · Cited by 442
Extreme ultraviolet resist materials for sub-7 nm patterning
Li, L., Liu, X., Pal, S., Wang, S., Ober, C. K., & Giannelis, E. P. (2017) · Chemical Society Reviews · doi:10.1039/c7cs00080d · Cited by 350
Zhuang, J., Terfort, A., & Wöll, C. (2015) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2015.09.013 · Cited by 233
Srisombat, L., Jamison, A. C., & Lee, T. R. (2011) · Colloids and Surfaces A Physicochemical and Engineering Aspects · doi:10.1016/j.colsurfa.2011.09.020 · Cited by 229
Heinke, L., & Wöll, C. (2019) · Advanced Materials · doi:10.1002/adma.201806324 · Cited by 192
Zharnikov, M., Frey, S., Heister, K., et al. (2000) · Langmuir · doi:10.1021/la991034r · Cited by 167
Barriet, D., Yam, C. M., Shmakova, O. E., Jamison, A. C., & Lee, T. R. (2007) · Langmuir · doi:10.1021/la7007733 · Cited by 128
Zharnikov, M., Geyer, W., Gölzhäuser, A., et al. (1999) · Physical Chemistry Chemical Physics · doi:10.1039/a902013f · Cited by 127
Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers
Harnett, C. K., Satyalakshmi, K. M., & Craighead, H. G. (2000) · Applied Physics Letters · doi:10.1063/1.126378 · Cited by 107
Kinetics of Exchange of Alkanethiol Monolayers Self-Assembled on Polycrystalline Gold
Baralia, G. G., Duwez, A., Nysten, B., et al. (2005) · Langmuir · doi:10.1021/la050245v · Cited by 83
Morphology control of perovskite light-emitting diodes by using amino acid self-assembled monolayers
Wang, N., Cheng, L., Si, J., et al. (2016) · Applied Physics Letters · doi:10.1063/1.4945330 · Cited by 79
Ashby, P. D., Olynick, D. L., Ogletree, D. F., & Naulleau, P. P. (2015) · Advanced Materials · doi:10.1002/adma.201501171 · Cited by 75
Wang, Z., & Wöll, C. (2018) · Advanced Materials Technologies · doi:10.1002/admt.201800413 · Cited by 72
Fosbinder, A. A. (2002) · Seminars in Radiologic Technology · doi:10.1053/srat.2002.123933 · Cited by 66
Kim, G., An, S., Hyeong, S., Lee, S., Kim, M., & Shin, N. (2019) · Chemistry of Materials · doi:10.1021/acs.chemmater.9b03155 · Cited by 63
Surface-Mounted Metal–Organic Frameworks: Past, Present, and Future Perspectives
Semrau, A. L., Zhou, Z., Mukherjee, S., Tu, M., Li, W., & Fischer, R. A. (2021) · Langmuir · doi:10.1021/acs.langmuir.1c00245 · Cited by 56
Characterization of extreme ultraviolet resists with interference lithography
Gronheid, R., Solak, H. H., Ekinci, Y., Jouve, A., & Roey, F. V. (2006) · Microelectronic Engineering · doi:10.1016/j.mee.2006.01.149 · Cited by 55
Self-citationModification of semifluorinated alkanethiolate monolayers by low energy electron irradiation
Frey, S., Heister, K., Zharnikov, M., et al. (2000) · Physical Chemistry Chemical Physics · doi:10.1039/a910314g · Cited by 55
Current challenges and opportunities for EUV lithography
Levinson, H., & Brunner, T. A. (2018) · International Conference on Extreme Ultraviolet Lithography · doi:10.1117/12.2502791 · Cited by 51
What We Don’t Know About EUV Exposure Mechanisms
Narasimhan, A. K., Wisehart, L., Grzeskowiak, S., Ocola, L. E., Denbeaux, G., & Brainard, R. L. (2017) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.30.113 · Cited by 44
High-NA EUV lithography: pushing the limits
Zahlten, C., Gräupner, P., van Schoot, J., Kuerz, P., Stoeldraijer, J. M. D., & Kaiser, W. M. (2019) · European Mask and Lithography Conference (EMLC) · doi:10.1117/12.2536469 · Cited by 44
EUV photolithography: resist progress and challenges
Xu, H., Kosma, V., Giannelis, E. P., Ober, C. K., & Sakai, K. (2018) · Extreme Ultraviolet (EUV) Lithography · doi:10.1117/12.2302759 · Cited by 36
Lee, S. H., Rho, W., Park, S. J., Kim, J., Kwon, O. S., & Jun, B. (2018) · Scientific Reports · doi:10.1038/s41598-018-35195-9 · Cited by 35
Yang, J., Ichii, T., Murase, K., et al. (2012) · Langmuir · doi:10.1021/la301042y · Cited by 32
Photo Material Readiness at the Eve of EUVL HVM
Simone, D. D., Vanelderen, P., & Vandenberghe, G. (2017) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.30.613 · Cited by 26
Li, Q., Gies, J., Yu, X., et al. (2020) · Chemistry - A European Journal · doi:10.1002/chem.202000594 · Cited by 25
EUVL: Challenges to Manufacturing Insertion
Wood, O. R. (2017) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.30.599 · Cited by 23
EUV Photoresists: A Progress Report and Future Prospects
Lio, A. (2019) · Synchrotron Radiation News · doi:10.1080/08940886.2019.1634431 · Cited by 22
Yildirim, C., Füser, M., Terfort, A., et al. (2016) · The Journal of Physical Chemistry C · doi:10.1021/acs.jpcc.6b11269 · Cited by 18
High-NA EUV imaging: challenges and outlook
Bilski, B., Zimmermann, J., Roesch, M., Liddle, J. A., van Setten, E., Bottiglieri, G., & van Schoot, J. (2019) · European Mask and Lithography Conference (EMLC) · doi:10.1117/12.2536329 · Cited by 15
The production and verification of pristine semi-fluorinated thiol monolayers on gold
Ford, K., Battersby, B. J., Wood, B., et al. (2011) · Journal of Colloid and Interface Science · doi:10.1016/j.jcis.2011.10.081 · Cited by 11
Impact of Synthetic Conditions on the Morphology and Crystallinity of FDMOF-1(Cu) Thin Films
Lugier, O. C. M., Pokharel, U., & Castellanos, S. (2020) · Crystal Growth & Design · doi:10.1021/acs.cgd.0c00529 · Cited by 11
Self-citationSite-selective immobilization of functionalized DNA origami on nanopatterned Teflon AF
Shaali, M., Woller, J. G., Johansson, P. G., et al. (2017) · Journal of Materials Chemistry C · doi:10.1039/c7tc01015j · Cited by 7
Estimation of the Number of Quantum Dots Immobilized on an Ultra-flat Au Surface
Ito, H., Iio, A., Tokuhara, K., et al. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-017-2056-2 · Cited by 6
The hidden energy tail of low energy electrons in EUV lithography
Fallica, R., Rezvani, S. J., Nannarone, S., et al. (2019) · doi:10.1117/12.2514998 · Cited by 6
DNA self-assembly-driven positioning of molecular components on nanopatterned surfaces
Szymonik, M., Davies, A. G., & Wälti, C. (2016) · Nanotechnology · doi:10.1088/0957-4484/27/39/395301 · Cited by 5
Wu, C. H., Wang, Y., Han, X., et al. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/23/235302 · Cited by 4
Lugier, O. C. M., Troglia, A., Sadegh, N., et al. (2020) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.33.229 · Cited by 2
Self-citation
Flagged first, then by citations
Research works printed but not linked: 2
- Moore, G. Cramming More Components onto Integrated Circuits, Reprinted from Electronics; IEEE, 1965; Vol. 38.
- IEEE International Roadmap for Devices and SystemsTM. https://irds.ieee.org, (accessed Jan 2, 2020).
Cited by
Sorted by citations
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Self-citationResistless EUV lithography: Photon-induced oxide patterning on silicon
Tseng, L.-T., Karadan, P., Kazazis, D., Constantinou, P. C., Stock, T. J. Z., Curson, N. J., Schofield, S. R., Muntwiler, M., Aeppli, G., & Ekinci, Y. (2023) · Science Advances · doi:10.1126/sciadv.adf5997 · Cited by 34
Self-citationRecent Progress of Nonchemically‐Amplified Resists for High‐Resolution Lithography †
Li, H., Peng, R., Liu, Z., Lian, P., Chen, J., Yu, T., Zeng, Y., Wang, S., Guo, X., Hu, R., et al. (2026) · Chinese Journal of Chemistry · doi:10.1002/cjoc.70573 · Cited by 2
Metadata
- Authors
- Lugier, O., Thakur, N., Wu, L., Vockenhuber, M., Ekinci, Y., & Castellanos, S.
- Affiliations
- Advanced Research Center for Nanolithography (Netherlands) (NL)
- Paul Scherrer Institute (CH)
- Corresponding author
- Lugier, O.
- Castellanos, S.
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2021-08-31
- Volume
- 13
- Issue
- 36
- Pages
- 43777-43786
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W3198531915
- Cited by
- 13
- References
- 44
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 2 · 2023: 3 · 2022: 2
- FWCI
- 0.51
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- ACS Applied Materials & Interfaces (publishedVersion, cc-by-nc-nd)
- PubMed (publishedVersion)
- DORA PSI (Paul Scherrer Institute) (submittedVersion, cc-by-nc-nd)
- ARCNL Institutional Repository (ARCNL) (submittedVersion)
- Funders
- H2020 Research Infrastructures (730872)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Materials Science › Surfaces, Coatings and Films › Nanofabrication and Lithography Techniques
- Physical Sciences › Chemistry › Physical and Theoretical Chemistry › Surface Chemistry and Catalysis
- Keywords
- bottom-up nanofabrication, EUV lithography, metal-organic frameworks, self-assembled monolayers, low-energy electron irradiation, selective growth, nanopatterning, hybrid nanostructures, pattern transfer
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
