Cited by 650Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesSemiconductor materials and devices

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Lithography gets extreme

Wagner, Christian, Harned, Noreen·2010·Nature Photonics

DOI 10.1038/nphoton.2009.251

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“The emergence of lithography technologies, including nanoimprint [17–19], electron beams [20–25], extreme ultraviolet [26], and scanning probes [27], provide another opportunity for the fabrication of high-resolution micro/nano structures.”
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BackgroundMethodInfluential
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“Next-generation photolithography tools in the extreme UVwavelength regime (EUV lithography) (Wagner & Harned, 2010) and directed self-assembly of block copolymer (BCP) thin films (Leibler, 1980; Darling, 2007; Albert & Epps, 2010; Liu et al., 2013; Chang et al., 2014; Bates et al., 2014) are…”
Method
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“For example, extreme ultraviolet (EUV) lithography necessitates extra modeling for reflective projection optics [Wagner and Harned 2010], while etching-based or nanoimprint methods require an added step to transform the resist profile into the final structure [Barcelo and Li 2016].”
Method
Watt-level acousto-optically Q-switched Pr:YLF laser at 639 nm
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“Direct red laser generation based on Pr 3 (cid:1) doping can also produce effective coherent ultraviolet radiation through simple frequency doubling, offering a straightforward solution for pulsed visible and UV sources, which are required for materials processing [15] and lithography [16] .”
Background
Manipulating spatial light fields for micro- and nano-photonics
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“The plasma, which influences the droplet stream, will diffuse in space, which is modeled using a parabolic PDE, giving arise to the coupled hyperbolic-parabolic mixed-type PDE system [6].”
Method
Tutorial: Fabrication and three-dimensional integration of nanoscale memristive devices and arrays
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Plasmonic interference lithography by coupling the bulk plasmon polariton mode and the waveguide mode
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High throughput fabrication of large-area plasmonic color filters by soft-X-ray interference lithography
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Stabilization of an underactuated coupled transport-wave PDE system
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“A more in depth overview of the physics of the system can be found in [8].”
Background
Manipulation and simulations of thermal field profiles in laser heat-mode lithography
Wei, T., Wei, J., Wang, Y., et al. (2017) · Journal of Applied Physics · doi:10.1063/1.5002575 · Cited by 12
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Critical dimension prediction of metal oxide nanoparticle photoresists for electron beam lithography using a recurrent neural network
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Evaluation of H2 Plasma‐Induced Damage in Materials for EUV Lithography
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Authors: Wagner, C., & Harned, N.
Affiliations: ASML (Netherlands) (NL)
Corresponding author: Wagner, Christian
ORCID: Wagner, Christian
Venue: Nature Photonics
Publisher: Springer Science and Business Media LLC
Published: 2010-01
Volume: 4
Issue: 1
Pages: 24-26
ISSN: 1749-4885 (ISSN-L)
1749-4893
DOI: 10.1038/nphoton.2009.251
OpenAlex: W2975639389
Cited by: 650
References: 0
Citations by year: 2026: 46 · 2025: 48 · 2024: 52 · 2023: 52 · 2022: 52 · 2021: 40 · 2020: 59 · 2019: 44 · 2018: 42 · 2017: 44 · 2016: 37 · 2015: 40 · 2014: 35 · 2013: 25 · 2012: 16
FWCI: 8.99
Type: journal article
Language: en
Open access: closed
Licence: www.springer.com/tdm (tdm)
Locations: Nature Photonics (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords: EUV lithography, photolithography, integrated circuit fabrication, semiconductor manufacturing, high-volume manufacturing

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