Cited by 650Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesSemiconductor materials and devices

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Lithography gets extreme

Wagner, Christian, Harned, Noreen·2010·Nature Photonics

DOI 10.1038/nphoton.2009.251

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“Up to now other techniques like nano-imprint lithography [2] or extreme UV lithography [3] do not fit to the requests in low defect density or are limited by the exposure area.”
Background
Bilayer wire-grid polarizers for DUV to IR fabricated using EUV interference and nanoimprint lithography
Wang, L., Schift, H., Kristiansen, P. M., et al. (2013) · doi:10.1109/nems.2013.6559941 · Cited by 1
“Alternatively, for largearea and high-resolution manufacturing, particular interest has been directed towards EUV lithography, which is considered as the leading candidate for 22 nm half-pitch (HP) processing and below [9, 10].”
Background
Scaling of high average power, short-pulse CO2 lasers
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“5 nm, which is applied in EUV lithography [15].”
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Advancement in resist materials for sub-7 nm patterning and beyond
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Modelling of EUV light sources based on microwave discharge in inhomogeneous flow of nonequilibrium plasma with multiply charged tin and xenon ions
Abramov, I. S., Gospodchikov, E. D., & Shalashov, A. G. (2018) · EPJ Web of Conferences · doi:10.1051/epjconf/201818701001 · Cited by 1
“Extreme ultraviolet (EUV) lithography is key technology for further decrease of integral circuit (IC) scales [1].”
Background
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Shimizu, Y. (2019) · Precision manufacturing · doi:10.1007/978-981-10-4938-5_18 · Cited by 1
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“However, its manufacturing cost is also the highest [9].”
Background
Ultra-high photon flux high-harmonic generation
Tschernajew, M., Hädrich, S., Klas, R., et al. (2022) · Optica High-brightness Sources and Light-driven Interactions Congress 2022 · doi:10.1364/euvxray.2022.eth3a.3 · Cited by 1
Atomic structure considerations for the low-temperature opacity of Xenon
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Si containing block copolymers quickly assemble into sub-6 nm domains
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Enhancing infrared emissivity of thin films through multilayer configurations
Hwang, J. (2023) · Journal of the Korean Physical Society · doi:10.1007/s40042-023-00933-4 · Cited by 1
“To further this trend, extreme ultraviolet (EUV) lithography equipment utilizing EUV light sources has been introduced [1].”
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Cai, Y., & Wu, J. (2025) · Physical Review Accelerators and Beams · doi:10.1103/physrevaccelbeams.28.050701 · Cited by 1
Multilayer mirrors for attosecond pulses
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“With this method high throughput can be achieved, but sophisticated tricks [8–10] are needed to achieve this resolution and usually highly specialised, expensive equipment for immersion photolithography, deep or extreme ultraviolet photolithography [ 11 , 12] is necessary.”
Method
Understanding the behavior of laser-produced tin plasma by time-resolved spectroscopy and simulations of their spectra
Kambali, I., McCormack, T., Scally, E., et al. (2011) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.878869
“2 Tin UTA intensity of Sn VI – Sn XXV versus wavelength calculated by Cowan suite of code [1] convolved with Gaussian broadening of 0.”
BackgroundMethod
High-intensity nanosecond all-fiber-coiled laser and extreme ultraviolet generation
Chang, C.-L., Li, Y.-Y., Lai, P.-Y., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2075546
“5 nm in wavelength from tin plasmas [5] for high volume manufacture lithography with an efficiency of ~5% using a 10.”
Method
Project for manufacturing a Russian EUV nanolithographer for the fabrication of chips according to technological standards of 22 nm
Салащенко, Н. Н., & Chkhalo, N. I. (2011) · Bulletin of the Russian Academy of Sciences Physics · doi:10.3103/s1062873811010229
Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology
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“Up to now other techniques like nano-imprint lithography [3] or extreme UV lithography [4] do not fulfil the requests of low defect density or are limited by the exposure area.”
Background
Research of the CO2 laser produced tin plasma and its extreme ultraviolet emission
Wang, X., DouLuo, Z., Lu, P., et al. (2012) · International Photonics and Optoelectronics Meetings · doi:10.1364/ltst.2012.mf2a.2
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Satō, T., Yamada, A., & Suto, T. (2015) · Advanced Optical Technologies · doi:10.1515/aot-2015-0022
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“Many efforts have been devoted to it recent years, one straightforward method is to use ultrashort light source, such as extreme UV [1, 2], x-rays [3, 4] and electron beam [5, 6] etc.”
Method
Interferometric light microscopy for wafer defect inspection and three-dimensional object reconstruction
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III-V compound semiconductor selective area epitaxy on silicon substrates
Lu, Y. (2014) · Illinois Digital Environment for Access to Learning and Scholarship (University of Illinois at Urbana-Champaign)
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Cao, H., & Deng, H. (2018) · China Semiconductor Technology International Conference (CSTIC) · doi:10.1109/cstic.2018.8369215
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Luo, X. (2019) · Springer eBooks · doi:10.1007/978-981-13-5755-8_7
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Wei, J. (2019) · Springer series in materials science · doi:10.1007/978-981-15-0943-8_1
EUV spectroscopy of optically thin germanium plasmas in the 9-18 nm region
Maguire, O., Kos, D., O’Sullivan, G., et al. (2020) · Journal of Physics Conference Series · doi:10.1088/1742-6596/1412/19/192016
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Nie, Y., Shafer, D. R., Ottevaere, H., et al. (2021) · doi:10.1117/12.2601240
High-order harmonic generation in noble gas driven by high-power ultrafast thulium-doped fiber lasers
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Soft x-ray high order harmonic generation from high power ultrafast thulium-doped fiber lasers
Gebhardt, M., Heuermann, T., Gaida, C., et al. (2020) · OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS) · doi:10.1364/euvxray.2020.em2a.7
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Khosroabadi, A. A. (2014)
Development of counter-facing discharge device for extreme ultraviolet source. Control of current waveform and its effects on the plasma dynamics
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Spectra of high energy ions as debris in laser-produced plasma EUV source
Nakayama, Y., Kawasaki, H., & Higashiguchi, T. (2021) · doi:10.1117/12.2601122
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Helical displacement Talbot lithography for duty cycles of periodic patterning
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“In the following 30 years, the Talbot lithography under UV [20], DUV [21], and EUV [22] has also been experimentally verified.”
BackgroundInfluential
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Authors: Wagner, C., & Harned, N.
Affiliations: ASML (Netherlands) (NL)
Corresponding author: Wagner, Christian
ORCID: Wagner, Christian
Venue: Nature Photonics
Publisher: Springer Science and Business Media LLC
Published: 2010-01
Volume: 4
Issue: 1
Pages: 24-26
ISSN: 1749-4885 (ISSN-L)
1749-4893
DOI: 10.1038/nphoton.2009.251
OpenAlex: W2975639389
Cited by: 650
References: 0
Citations by year: 2026: 46 · 2025: 48 · 2024: 52 · 2023: 52 · 2022: 52 · 2021: 40 · 2020: 59 · 2019: 44 · 2018: 42 · 2017: 44 · 2016: 37 · 2015: 40 · 2014: 35 · 2013: 25 · 2012: 16
FWCI: 8.99
Type: journal article
Language: en
Open access: closed
Licence: www.springer.com/tdm (tdm)
Locations: Nature Photonics (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords: EUV lithography, photolithography, integrated circuit fabrication, semiconductor manufacturing, high-volume manufacturing

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