Cited by 650Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesSemiconductor materials and devices

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Lithography gets extreme

Wagner, Christian, Harned, Noreen·2010·Nature Photonics

DOI 10.1038/nphoton.2009.251

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Background
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Background
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Background
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Authors: Wagner, C., & Harned, N.
Affiliations: ASML (Netherlands) (NL)
Corresponding author: Wagner, Christian
ORCID: Wagner, Christian
Venue: Nature Photonics
Publisher: Springer Science and Business Media LLC
Published: 2010-01
Volume: 4
Issue: 1
Pages: 24-26
ISSN: 1749-4885 (ISSN-L)
1749-4893
DOI: 10.1038/nphoton.2009.251
OpenAlex: W2975639389
Cited by: 650
References: 0
Citations by year: 2026: 46 · 2025: 48 · 2024: 52 · 2023: 52 · 2022: 52 · 2021: 40 · 2020: 59 · 2019: 44 · 2018: 42 · 2017: 44 · 2016: 37 · 2015: 40 · 2014: 35 · 2013: 25 · 2012: 16
FWCI: 8.99
Type: journal article
Language: en
Open access: closed
Licence: www.springer.com/tdm (tdm)
Locations: Nature Photonics (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords: EUV lithography, photolithography, integrated circuit fabrication, semiconductor manufacturing, high-volume manufacturing

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