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Zhao, C., He, B., Wang, G., et al. (2016) · Macromolecular Rapid Communications · doi:10.1002/marc.201600307 · Cited by 5
Liu, M., & Liu, X. (2018) · Ferroelectrics · doi:10.1080/00150193.2018.1448175 · Cited by 5
Comparison of Durability for PUA Type Resin using Wear and Nano-indentation Test
Choi, H. M., Kwon, S., Jung, Y.-G., et al. (2018) · Journal of the Korean Society of Manufacturing Process Engineers · doi:10.14775/ksmpe.2018.17.5.008 · Cited by 5
Li, L., Huang, Z., & Yang, Y. (2020) · IEEE Access · doi:10.1109/access.2020.3033327 · Cited by 5
“Typical industrial applications requiring high pulse-repetition frequencies (PRFs) include plasma assisted combustion [3], pulsed extreme ultraviolet light source [4], non-thermal plasma processing [5]–[7], plasmamedical [8] and so on.”
BackgroundCryo-electron tomography reconstructs polymer in liquid film for fab-compatible lithography
Zheng, L., Xia, Y., Jia, X., Gao, M., Liu, N., Song, J., Li, X., Zhao, X., Gao, X., Zhou, W., et al. (2025) · Nature Communications · doi:10.1038/s41467-025-63689-4 · Cited by 5
Scalable and reproducible sub-5 nm manufacturing for next-generation devices
Chen, L., Luo, S., Yang, D., Yuan, Q., Zhang, Y., Sun, B. T., Lv, J., Chen, X., Tian, H., Li, X., et al. (2025) · International Journal of Extreme Manufacturing · doi:10.1088/2631-7990/ae2578 · Cited by 4
Tert‐Butyl–Engineered Trinuclear Tin Complexes for High‐Sensitivity Sub‐10 Nm Patterning
Gong, X., Cong, R., Huang, X., Zhao, Y., Wang, D., Chen, Z., Zhang, M., Zheng, L., Li, W., Xu, R., et al. (2026) · Advanced Functional Materials · doi:10.1002/adfm.202531807 · Cited by 4
Liu, M., Lu, B., Lv, J. H., et al. (2024) · Micromachines · doi:10.3390/mi15020200 · Cited by 4
“…limitations [11–13], which are expected to overcome the challenges of complex fabrication processes, limited processing material, and high environmental requirements in micro-nano manufacturing processes, such as photolithography [14], focused ion beam [15], and electron beam lithography [16].”
BackgroundLigand effect on In–Ti-oxo nanoclusters for nanolithography
Wu, J., Chen, J., Wang, L., Ye, Y., Zhan, X., Song, Y., Li, Q., Yi, X., & Zhang, J. (2025) · Materials Horizons · doi:10.1039/d4mh01920b · Cited by 4
Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices
Yu, J., Zhi, T., Zhang, D., et al. (2025) · Applied Physics Letters · doi:10.1063/5.0292605 · Cited by 4
Zhang, T., Ma, Y., Li, J., Sun, T., Zhao, X., & Cui, J. (2021) · Optics Express · doi:10.1364/oe.420761 · Cited by 5
Won, S., Choi, S., Kim, T., et al. (2023) · Nanophotonics · doi:10.1515/nanoph-2023-0300 · Cited by 4
Pan, Y., Sunahara, A., Namba, S., et al. (2023) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ace36f · Cited by 4
You, C., Hu, Y., Lin, G., et al. (2024) · Optics Express · doi:10.1364/oe.539532 · Cited by 4
Irradiation Effects on EUV Nanolithography Collector Mirrors
Allain, J. P. (2011) · InTech eBooks · doi:10.5772/24316 · Cited by 4
Dinh, T.-H., Suzuki, Y., Hirose, R., et al. (2014) · Review of Scientific Instruments · doi:10.1063/1.4901934 · Cited by 4
Reflective mask for projection lithography operating at a wavelength of 13.5 nm
Gusev, S. A., Zuev, S. Y., Klimov, A. Y., et al. (2012) · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · doi:10.1134/s1027451012070075 · Cited by 4
FePt Thin Films: Fundamentals and Applications
Hsiao, S. (2016) · Elsevier eBooks · doi:10.1016/b978-0-12-803581-8.02678-3 · Cited by 4
Femtosecond laser-matter interactions in ternary zinc phosphate glasses
Hernandez‐Rueda, J., Troy, N. W., Freudenberger, P. T., Brow, R. K., & Krol, D. M. (2018) · Optical Materials Express · doi:10.1364/ome.8.003622 · Cited by 4
Musgrave, C. S. A., Shoji, S., & Nagai, K. (2020) · Scientific Reports · doi:10.1038/s41598-020-62858-3 · Cited by 4
Photoresist for Extreme Ultraviolet Lithography
Tao, P., Sheng, L., Wang, Q., Cui, H., Wang, X., He, X., & Xu, H. (2020) · International Workshop on Advanced Patterning Solutions (IWAPS) · doi:10.1109/iwaps51164.2020.9286794 · Cited by 4
Extreme-ultraviolet structured beams via high harmonic generation
Pandey, A. K., Heras, A. D. L., Román, J. S., Serrano, J., Plaja, L., Baynard, E., Pittman, M., Dovillaire, G., Kazamias, S., Durfee, C. G., et al. (2022) · The European Physical Journal Special Topics · doi:10.1140/epjs/s11734-022-00678-4 · Cited by 4
“On the other hand, intense EUV vector beams obtained through HHG in an extended generation medium pave the way for short-wavelength lithography [46, 47], microscopy [48], and diffraction imaging applications [49, 50].”
BackgroundSoleymaniha, M., & Felts, J. R. (2019) · doi:10.1117/12.2514686 · Cited by 4
“With the latest developments in conventional photolithography, new technologies such as Extreme Ultraviolet (EUV) lithography[1] and double or quadruple patterning [2, 3] have provided the ability to pattern with the resolution better than 20 nm.”
MethodRen, Y., Wang, X., Di, X., et al. (2022) · Applied Physics B · doi:10.1007/s00340-022-07866-z · Cited by 4
Focusing of an elliptical mirror based system with aberrations
Liu, J., Ai, M., Zhang, H., et al. (2013) · Journal of Optics · doi:10.1088/2040-8978/15/10/105709 · Cited by 4
Kim, H., Danylyuk, S., Brocklesby, W. S., et al. (2016) · Journal of the Optical Society of Korea · doi:10.3807/josk.2016.20.2.245 · Cited by 4
Design of a compact device to generate and test beams with orbital angular momentum in the EUV
Pabón, D. O., Ledesma, S. A., Quinteiro, G. F., et al. (2017) · Applied Optics · doi:10.1364/ao.56.008048 · Cited by 4
Overlapping-aware throughput-driven stencil planning for E-beam lithography
Kuang, J., & Young, E. F. Y. (2014) · doi:10.1109/iccad.2014.7001360 · Cited by 4
Bismuth-oxo Clusters for Next Generation Extreme Ultraviolet Light Photolithography
MacKenzie, H. K., LaPierre, E. A., Zhang, Q., Kostko, O., Young, H. K. S., & Manners, I. (2025) · Chemistry of Materials · doi:10.1021/acs.chemmater.5c01797 · Cited by 3
The dynamics and distribution of debris on laser-ablated Ga-In-Sn liquid film
Zhai, T., Xu, C., Chen, X., et al. (2026) · Science China Physics Mechanics and Astronomy · doi:10.1007/s11433-025-2842-x · Cited by 3
Hong, Q., Zhang, J., Wang, S., Chu, Z., Wang, M., Sun, J., & Guo, Q. (2021) · Applied Optics · doi:10.1364/ao.433564 · Cited by 3
Bottom grating asymmetry-induced inaccuracy in diffraction-based overlay measurement
Zhang, Y., Zhang, D. W., Bian, Y., et al. (2022) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.21.3.034001 · Cited by 3
Liu, Y., Rui, Y., Zhao, Z., et al. (2022) · Symmetry · doi:10.3390/sym14112469 · Cited by 3
Generating high-harmonic array beams
Reddy, A. N. K., Zacharias, H., Yılmaz, H., et al. (2025) · APL Photonics · doi:10.1063/5.0240124 · Cited by 3
Won, S., Kim, J., Oh, Y., et al. (2025) · PhotoniX · doi:10.1186/s43074-025-00206-2 · Cited by 3
“The recent advent of extreme ultraviolet (EUV, λ = 10—120 nm) lithography has further narrowed the transistor linewidths to the tens of nanometers [5, 6], thereby necessitating a high-resolution measurement of periodic patterns and precision relative alignment of the mask with respect to existing…”
Advanced matrix laser lithography for fabrication of photonic micro-structures
Škereň, M., Svoboda, J., & Fiala, P. (2012) · Journal of the European Optical Society Rapid Publications · doi:10.2971/jeos.2012.12043 · Cited by 3
“The leading-edge lithographic devices have been primarily developed for the semiconductor industry [1]–[3].”
BackgroundElectron scattering analysis based on electron ray-tracing in extreme ultraviolet photomask
Choi, J. J., Ahn, B.-S., & Jeon, C. U. (2014) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.4878943 · Cited by 3
Productivity of femtosecond DUV laser photomask repair in a real world mask house
Lin, J., Chen, C. Y., Tsai, F.-G., et al. (2011) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.898502 · Cited by 3
Characteristics of laser induced discharge tin plasma and its extreme ultraviolet radiation
Wang, J., Wang, X., & Zuo, D. (2020) · Frontiers of Optoelectronics · doi:10.1007/s12200-020-0964-8 · Cited by 3
Investigation on Sensitivity of a Contact-Type Thermal Sensor for Surface Defect Inspections
Shimizu, Y., Ohba, Y., & Gao, W. (2015) · International Journal of Automation Technology · doi:10.20965/ijat.2015.p0291 · Cited by 3
Response of ∼100 micron water jets to intense nanosecond laser blasts
Gao, L., Liu, Y., Tang, H., et al. (2022) · Physical Review Fluids · doi:10.1103/physrevfluids.7.034001 · Cited by 3
Klebanoff, L. (2022) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/6.0001816 · Cited by 3
Yang, W., Xu, H., & Wang, S. (2022) · Technology Analysis and Strategic Management · doi:10.1080/09537325.2022.2155807 · Cited by 3
“The fi fth-generation EUV lithography machine is the industry ’ s most advanced, which uses 13.5 nm extreme ultraviolet light and is capable of producing a 7 nm process (Wagner and Harned 2010).”
InfluentialSaini, A., Negi, H., Srivastava, A., et al. (2024) · Silicon · doi:10.1007/s12633-024-02899-9 · Cited by 3
Huifang, 赵. Z., Zuohu, 周. Z., & Lei, 张. Z. (2024) · Chinese Journal of Lasers · doi:10.3788/cjl241047 · Cited by 3
Li, B., Wang, K., Tang, X., Zhang, C., Wang, B., & Jin, C. (2024) · Physical Review A · doi:10.1103/physreva.110.043511 · Cited by 3
EUV mask technologies: evolution and ecosystem for devices
Choi, J. (2024) · SPIE Photomask Technology Conference · doi:10.1117/12.3037237 · Cited by 3
Huang, Q., Feng, J., Li, T., et al. (2019) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ab0873 · Cited by 3
Quantum theory for plasmon-assisted local field enhancement
Grigorenko, I. (2015) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2015.09.032 · Cited by 3
Liu, Y., & Li, Y. (2016) · Optical Engineering · doi:10.1117/1.oe.55.9.095108 · Cited by 3
Liquid tin droplet fragmentation by ultra-short laser pulse
Grigoryev, S. Y., Dyachkov, S. A., Khokhlov, V. A., et al. (2019) · Journal of Physics Conference Series · doi:10.1088/1742-6596/1147/1/012067 · Cited by 3
Modeling multilayer coating profiles with defects on EUV collector with grating
Sun, S., Jin, C., Yu, B., et al. (2019) · Optical Engineering · doi:10.1117/1.oe.58.10.107102 · Cited by 3
The mechanisms and research progress of laser fabrication technologies beyond diffraction limit
Xin-Zheng, Z., Feng, X., & Xu, J. (2017) · Acta Physica Sinica · doi:10.7498/aps.66.144207 · Cited by 3
Improved Smith–Purcell free-electron laser based on quasi-bound states in the continuum
Chen, Z., Mao, L., Jin, M., et al. (2022) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aca33e · Cited by 3
Methods for Fabricating Printed Electronics with High Conductivity and High Resolution
Zhang, T. (2013) · Scholarship@Western (Western University) · Cited by 3
Comparative study of nanolithography based on extraordinary and diffracted optical transmissions
Kim, T., Ahn, H., Song, H., et al. (2019) · Optics & Laser Technology · doi:10.1016/j.optlastec.2019.105658 · Cited by 3
Zhu, J., Guo, S. W., Zhao, J., Li, X., Shao, J., Zhou, H., & Huo, T. (2025) · Chinese Optics Letters · doi:10.3788/col202523.033401 · Cited by 2
“Extreme ultraviolet (EUV) radiation covers the wavelength range of 5 – 40 nm and is of great importance to applications in EUV lithography [1 – 3] , synchrotron radiation [4] , solar astronomy [5] , photon-level diagnostics [6] , and free-electron lasers [7] .”
Chen, Y., Song, C., Long, J., et al. (2025) · Applied Optics · doi:10.1364/ao.579483 · Cited by 2
Ku, Y., Park, H. B., Kim, G., Choi, H.-E., Lee, J., Lee, J.-W., Lee, S., Kim, J., Hur, M., & Kim, J. H. (2025) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c22668 · Cited by 4
A Novel Approach for Atomic-Scale Manufacturing via Enzymatic Hydrolysis Machining
Wu, B., Zhang, Y., Wang, Y., et al. (2026) · Engineering · doi:10.1016/j.eng.2026.01.024 · Cited by 2
A review of nanoimprint lithography for improving the optical performance of solar cells
Ribeiro, E. J., Violas, A., Lopes, T. S., et al. (2026) · Microelectronic Engineering · doi:10.1016/j.mee.2026.112455 · Cited by 2
Optical diagnostics of flow velocity in pressure-matched near-vacuum gaseous micro jets
Song, Z., Wakata, Y., Zhao, C., et al. (2026) · Science China Physics Mechanics and Astronomy · doi:10.1007/s11433-025-2880-3 · Cited by 2
Pengxiang, W., Yiang, Z., Rui, Y., et al. (2026) · Tribology International · doi:10.1016/j.triboint.2026.112016 · Cited by 2
Diffraction-limited short-wavelength optics: Analysis, fabrication, and application
Салащенко, Н. Н., & Chkhalo, N. I. (2012) · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · doi:10.1134/s1027451012060213 · Cited by 2
Recent advances in rapid polishing process of large aperture optical flats
Xie, R., Zhao, S., Liao, D., et al. (2019) · doi:10.1117/12.2505131 · Cited by 2
“) have strict requirements for the manufacturing precision of optical components [1-4].”
BackgroundHigh repetition rate high harmonic generation with ultra-high photon flux
Tschernajew, M., Hädrich, S., Klas, R., et al. (2021) · Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) · doi:10.1109/cleo/europe-eqec52157.2021.9542198 · Cited by 2
Polycrystalline CVD Diamond for Industrial Applications
Wörner, E., & Wild, C. (2014) · Elsevier eBooks · doi:10.1016/b978-0-08-096527-7.00052-0 · Cited by 2
Multipass cell post-compression at 515 nm as an efficient driver for a table-top 13.5 nm source
Karst, M., Pfaller, P., Klas, R., et al. (2023) · EPJ Web of Conferences · doi:10.1051/epjconf/202328708008 · Cited by 2
Li, H., Wan, S., Jiang, P., et al. (2024) · Optics Letters · doi:10.1364/ol.527827 · Cited by 2
Li, Y., Wu, D., Wang, X., et al. (2024) · Plasma Sources Science and Technology · doi:10.1088/1361-6595/ad6586 · Cited by 2
“For example, extreme ultraviolet lithography (EUVL) is the most promising means for the next generation nanolithography [10, 11, 38–40].”
Tailoring the morphological and optical properties of monodisperse silica
Saini, A., Negi, H., Srivastava, S. K., et al. (2024) · Journal of Sol-Gel Science and Technology · doi:10.1007/s10971-024-06604-5 · Cited by 2
“MPs in the present study exhibited PL throughout a wider spectrum of wavelengths than those in previous studies, suggesting that they may have applications in bio-medical, deep UV lithography systems etc. [58].”
Understanding and measuring EUV mask 3D effects
Sherwin, S., Hettermann, M., Houser, D., et al. (2024) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.23.4.041407 · Cited by 2
Byeon, J., Kim, D., Kim, S., Ahn, J., Oh, D. S., Yoon, Y. H., Jee, H., Kim, Y., Hwang, C.-C., & Hong, S. (2024) · Materials Today Chemistry · doi:10.1016/j.mtchem.2024.102474 · Cited by 3
Verkerk, K., Kasemsinsup, Y., Butler, H., et al. (2015) · 2006 14th Mediterranean Conference on Control and Automation · doi:10.1109/med.2015.7158898 · Cited by 2
“As the feature size of the image is ever decreasing [1], the wafer stage that holds the wafer has to be positioned with increasing precision in the horizontal plane [2].”
BackgroundHuang, Q., de Boer, M. J., Barreaux, J. L. P., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2046415 · Cited by 2
Laser-Produced Heavy Ion Plasmas as Efficient Soft X-Ray Sources
Higashiguchi, T., Dunne, P. A., & O’Sullivan, G. (2016) · InTech eBooks · doi:10.5772/63455 · Cited by 2
“7 nm [6–8] based on laser-produced plasmas (LPP) have been demonstrated in high-volume manufacturing of integrated circuits (IC) having node sizes of 22 nm or less [9, 10].”
BackgroundMultilayers for EUV, soft x-ray and x-ray optics
Wang, Z., Huang, Q., & Zhang, Z. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2218081 · Cited by 2
Nanolithography: Status and challenges
Hasan, R. M. M., & Luo, X. (2017) · International Conference on Automation and Computing (ICAC) · doi:10.23919/iconac.2017.8081979 · Cited by 2
“Figure 1 shows a schematic of an EUVL exposure system [5].”
BackgroundNanolithography using thermal stresses
Purohit, G., Deepak, D., & Katiyar, M. (2018) · RSC Advances · doi:10.1039/c8ra00278a · Cited by 2
Yee, T. D., Watson, C., Roehling, J. D., et al. (2019) · Soft Matter · doi:10.1039/c9sm00303g · Cited by 2
Direct Writing of 3D Micro/Nanostructures Based on Nanoscale Strong Electric Field of Electron Beam
Yang, G., Huang, X., & Jia, C. (2022) · Advanced Engineering Materials · doi:10.1002/adem.202200822 · Cited by 2
Understanding and measuring EUV mask 3D effects
Sherwin, S., Hettermann, M., Houser, D., et al. (2024) · doi:10.1117/12.3012400 · Cited by 2
Micro-to-Nanometer Scale Patterning of Perovskite Inks via Controlled Self-Assemblies
Kang, M., Choi, D., Bae, J. Y., & Byun, M. (2022) · Materials · doi:10.3390/ma15041521 · Cited by 2
Design of XY Air Bearing Stage for Ultra-Precision
Kumar, R., & Khatait, J. P. (2021) · Lecture notes in mechanical engineering · doi:10.1007/978-981-16-0550-5_104 · Cited by 1
Synthesis of Highly Ordered Si-Containing Fluorinated Block Copolymers
Zhou, J., Li, X., & Deng, H. (2021) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.34.329 · Cited by 1
Domestic wastewater treatment using floating raft techniques
Joshi, H. C., Singh, Y., Bhatt, M. K., & Prakash, O. (2022) · Elsevier eBooks · doi:10.1016/b978-0-323-91860-2.00014-2 · Cited by 1
Cen, J., Liu, W., Xu, J., Wang, X., Zhang, J., Zhang, J., Deng, Z., Zhou, C., Hu, J., & Liu, S. (2024) · Angewandte Chemie · doi:10.1002/ange.202415588 · Cited by 1
Mun, J. H., Jang, S.-H., & Nam, S. K. (2024) · Physical Review A · doi:10.1103/physreva.110.043115 · Cited by 2
Carbon Group: Elements of the Fourth Main Group
Sicius, H. (2024) · Springer eBooks · doi:10.1007/978-3-662-68921-9_4 · Cited by 1
New EUV interference lithography tool at PSI: pushing the limits of resolution beyond hyper NA EUVL
Kazazis, D., Maag, S., Schneider, M., et al. (2025) · doi:10.1117/12.3049465 · Cited by 1
Nanolithographic Techniques for Scaled-Up Manufacturing of Nanostructures
Li, B. (2025) · Smart nanomaterials technology · doi:10.1007/978-981-96-9176-0_14 · Cited by 1
Wang, Z., & Yu, Q. (2025) · Optics Express · doi:10.1364/oe.568917 · Cited by 1
Sim, J., Kim, D. J., Kim, E., et al. (2025) · Advanced Functional Materials · doi:10.1002/adfm.202518685 · Cited by 1
Boundary Stabilization of a Class of Coupled Hyperbolic‐Parabolic PDE Systems
Guo, Q., & Jin, F. (2025) · Mathematical Methods in the Applied Sciences · doi:10.1002/mma.70385 · Cited by 1
“In addition to the above-mentioned coupled systems, the hyperbolic-parabolic coupled system has garnered attention in recent years for its application in modeling the transport of metal droplets and plasma diffusion in Extreme Ultra Violet (EUV) [30].”
Contrast Modulation in DNA‐Based Lithography: Pathway to 3D Nanofabrication
Xu, A., Pop, A. N., Kim, H., & Liu, H. (2026) · Small Structures · doi:10.1002/sstr.202500718 · Cited by 1
Fan, T., Chen, X., Qi, M., Liu, Y., Yan, Q., Wang, L., Shen, J., & Yao, G. (2026) · Small Structures · doi:10.1002/sstr.202500690 · Cited by 1
“…two major challenges for industrial application: (i) FNAs cannot be directly employed for ion etching, and secondary transfer often leads to pattern distortion; (ii) the dimensions of DNA origami are too small to satisfy the large-area array requirements of semiconductor processing [121, 141, 142].”
Synergistic Fluoroalkyl and Electron-Rich Vinyl Units for Ionizing Radiation-Induced Cross-Linking
Kim, G., Ku, Y., Hwang, S. W., Lee, J., Kim, J., Lee, S., Jang, Y. H., Lee, S., Jung, B. J., Koh, C., et al. (2026) · Organic Letters · doi:10.1021/acs.orglett.5c04299 · Cited by 2
Lv, X., Feng, P., Chang, C., et al. (2026) · Optics and Lasers in Engineering · doi:10.1016/j.optlaseng.2026.109702 · Cited by 1
Jiang, X., Lv, B., Lin, B., et al. (2026) · The International Journal of Advanced Manufacturing Technology · doi:10.1007/s00170-026-18011-x · Cited by 1
Free-standing hybrid Zr/NGF filter for high-power EUV purification in EUV lithography
Jeong, M. J., Nam, K., Kim, M., et al. (2026) · Diamond and Related Materials · doi:10.1016/j.diamond.2026.113661 · Cited by 1
Metadata
- Authors
- Wagner, C., & Harned, N.
- Affiliations
- ASML (Netherlands) (NL)
- Corresponding author
- Wagner, Christian
- ORCID
- Wagner, Christian
- Venue
- Nature Photonics
- Published
- 2010-01
- Volume
- 4
- Issue
- 1
- Pages
- 24-26
- ISSN
- 1749-4885 (ISSN-L)
- 1749-4893
- OpenAlex
- W2975639389
- Cited by
- 650
- References
- 0
- Citations by year
- 2026: 46 · 2025: 48 · 2024: 52 · 2023: 52 · 2022: 52 · 2021: 40 · 2020: 59 · 2019: 44 · 2018: 42 · 2017: 44 · 2016: 37 · 2015: 40 · 2014: 35 · 2013: 25 · 2012: 16
- FWCI
- 8.99
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Nature Photonics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- EUV lithography, photolithography, integrated circuit fabrication, semiconductor manufacturing, high-volume manufacturing
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