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Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
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The gapless surface states of topological insulators could enable quantitatively different types of electronic device. A study of the topological insulating Bi2Se3 thin films finds that a gap in these states opens up in films below a certain thickness. This in turn suggests that in thicker films, gapless states exist on both upper and lower surfaces.
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Cited by
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Metadata
- Authors
- Zhang, Y., He, K., Chang, C.-Z., Song, C.-L., Wang, L.-L., Chen, X., Jia, J.-F., Fang, Z., Dai, X., Shan, W.-Y., Shen, S.-Q., Niu, Q., Qi, X.-L., Zhang, S.-C., Ma, X.-C., & Xue, Q.-K.
- Venue
- Nature Physics
- Published
- 2010-06-13
- Volume
- 6
- Issue
- 8
- Pages
- 584-588
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W2119751781
- Cited by
- 1,454
- References
- 31
- FWCI
- 51.88
- Type
- journal article
- Language
- en
- Open access
- bronze
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