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Nonlinear Optics with 2D Layered Materials
Autere, A., Jussila, H., Dai, Y., Wang, Y., Lipsanen, H. K., & Sun, Z. (2018) · Advanced Materials · doi:10.1002/adma.201705963 · Cited by 840 · see citing works
Directed self-assembly of block copolymers for use in bit patterned media fabrication
Griffiths, R. A., Williams, A. T., Oakland, C., et al. (2013) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/46/50/503001 · Cited by 375 · see citing works
Review on Micro- and Nanolithography Techniques and their Applications
Pimpin, A., & Srituravanich, W. (2012) · Engineering Journal · doi:10.4186/ej.2012.16.1.37 · Cited by 374 · see citing works
“In recent years, immersion lithography [8], resolution enhancement technology [9] and extreme-UV lithography [10] have been developed to improve the lithography”
BackgroundMethodShort-wavelength free-electron laser sources and science: a review *
Seddon, E. A., Clarke, J. A., Dunning, D. J., Masciovecchio, C., Milne, C. J., Parmigiani, F., Rugg, D. J., Spence, J. C. H., Thompson, N. R., Ueda, K., et al. (2017) · Reports on Progress in Physics · doi:10.1088/1361-6633/aa7cca · Cited by 249 · see citing works
Evolution in Lithography Techniques: Microlithography to Nanolithography
Sharma, E., Rathi, R., Misharwal, J., Sinhmar, B., Kumari, S., Dalal, J., & Kumar, A. (2022) · Nanomaterials · doi:10.3390/nano12162754 · Cited by 257 · see citing works
“The masks used in EUVL must be reflective and should not have a protective pellicle, as pellicle can result in absorption of the EUV beam [40].”
BackgroundSreenivasan, S. V. (2017) · Microsystems & Nanoengineering · doi:10.1038/micronano.2017.75 · Cited by 228 · see citing works
Kennemur, J. G., Yao, L., Bates, F. S., & Hillmyer, M. A. (2014) · Macromolecules · doi:10.1021/ma4020164 · Cited by 226 · see citing works
Chen, L., Wen, J., Zhang, P., Yu, B., Chen, C., Ma, T., Lu, X., Kim, S. H., & Qian, L. (2018) · Nature Communications · doi:10.1038/s41467-018-03930-5 · Cited by 219 · see citing works
Top-down fabrication of shape-controlled, monodisperse nanoparticles for biomedical applications
Fu, X., Cai, J., Zhang, X., Li, W., Ge, H., & Hu, Y. (2018) · Advanced Drug Delivery Reviews · doi:10.1016/j.addr.2018.07.006 · Cited by 218 · see citing works
Controlling the orbital angular momentum of high harmonic vortices
Kong, F., Zhang, C., Bouchard, F., Li, Z., Brown, G. G., Ko, D. H., Hammond, T. J., Arissian, L., Boyd, R. W., Karimi, E., et al. (2017) · Nature Communications · doi:10.1038/ncomms14970 · Cited by 209 · see citing works
Trends in photoresist materials for extreme ultraviolet lithography: A review
Wang, X., Tao, P., Wang, Q., Zhao, R., Liu, T., Hu, Y., Hu, Z., Wang, Y., Wang, J., Tang, Y., et al. (2023) · Materials Today · doi:10.1016/j.mattod.2023.05.027 · Cited by 222 · see citing works
Lithography at EUV wavelengths
Tallents, G. J., Wagenaars, E., & Pert, G. J. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.277 · Cited by 206 · see citing works
Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography
Makarov, G. N. (2013) · Physics-Uspekhi · doi:10.3367/ufne.0183.201307a.0673 · Cited by 196 · see citing works
Designing with Light: Advanced 2D, 3D, and 4D Materials
Jung, K., Corrigan, N. A., Çiftçi, M., Xu, J., Seo, S. E., Hawker, C. J., & Boyer, C. A. (2019) · Advanced Materials · doi:10.1002/adma.201903850 · Cited by 197 · see citing works
Optical Metasurfaces for Energy Conversion
Cortés, E., Wendisch, F. J., Sortino, L., Mancini, A., Ezendam, S., Saris, S., Menezes, L. D. S., Tittl, A., Ren, H., & Maier, S. A. (2022) · Chemical Reviews · doi:10.1021/acs.chemrev.2c00078 · Cited by 177 · see citing works
Sub-10 nm patterning using EUV interference lithography
Päivänranta, B., Langner, A., Kirk, E. C., Dávid, C., & Ekinci, Y. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/37/375302 · Cited by 173 · see citing works
Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens
Gao, P., Yao, N., Wang, C., et al. (2015) · Applied Physics Letters · doi:10.1063/1.4914000 · Cited by 166 · see citing works
Beyond EUV lithography: a comparative study of efficient photoresists' performance
Mojarad, N., Gobrecht, J., & Ekinci, Y. (2015) · Scientific Reports · doi:10.1038/srep09235 · Cited by 162 · see citing works
Ultrahigh 22 nm resolution coherent diffractive imaging using a desktop 13 nm high harmonic source
Seaberg, M., Adams, D. E., Townsend, E., Raymondson, D. A., Schlotter, W. F., Liu, Y., Menoni, C. S., Lu, R., Chen, C., Miao, J., et al. (2011) · Optics Express · doi:10.1364/oe.19.022470 · Cited by 159 · see citing works
Promising Lithography Techniques for Next-Generation Logic Devices
Hasan, R. M. M., & Luo, X. (2018) · Nanomanufacturing and Metrology · doi:10.1007/s41871-018-0016-9 · Cited by 159 · see citing works
Foundations of low-temperature plasma enhanced materials synthesis and etching
Oehrlein, G. S., & Hamaguchi, S. (2018) · Plasma Sources Science and Technology · doi:10.1088/1361-6595/aaa86c · Cited by 150 · see citing works
Torretti, F., Sheil, J., Schupp, R., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-15678-y · Cited by 140 · see citing works
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
“There is no foreseeable move to an even smaller wavelength beyond EUV (BEUV) owing to several technical, economic and logistical hurdles, although it has been proposed 105 and cannot be excluded as a long-term, next-generation solution.”
Synthesis, Assembly, Optical Properties, and Sensing Applications of Plasmonic Gap Nanostructures
Kim, J., Lee, C., Lee, Y., Lee, J., Park, S., Park, S., & Nam, J. (2021) · Advanced Materials · doi:10.1002/adma.202006966 · Cited by 130 · see citing works
Metal–organic framework-inspired metal-containing clusters for high-resolution patterning
Xu, H., Sakai, K., Kasahara, K., Kosma, V., Yang, K., Herbol, H. C., Odent, J., Clancy, P., Giannelis, E. P., & Ober, C. K. (2018) · Chemistry of Materials · doi:10.1021/acs.chemmater.8b01573 · Cited by 129 · see citing works
Additive nanomanufacturing – A review
Engstrøm, D. S., Porter, B. F., Pacios, M., & Bhaskaran, H. (2014) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2014.159 · Cited by 127 · see citing works
“For decades, realistic options for full scale industrial nanomanufacturing have relied on photolithography using electromagnetic radiation with increasingly shorter wave length.(18) The equipment to reach nanometer dimensions reliably is, however, prohibitively expensive, thereby excluding smaller R&D facilities and s…”
BackgroundNanostructure‐Enhanced Photoconductive Terahertz Emission and Detection
Yardimci, N. T., & Jarrahi, M. (2018) · Small · doi:10.1002/smll.201802437 · Cited by 127 · see citing works
Li, L., Chakrabarty, S., Spyrou, K., Ober, C. K., & Giannelis, E. P. (2015) · Chemistry of Materials · doi:10.1021/acs.chemmater.5b01506 · Cited by 126 · see citing works
Jeong, B., Han, H., & Park, C. (2020) · Advanced Materials · doi:10.1002/adma.202000597 · Cited by 121 · see citing works
Interference lithography at EUV and soft X-ray wavelengths: Principles, methods, and applications
Mojarad, N., Gobrecht, J., & Ekinci, Y. (2015) · Microelectronic Engineering · doi:10.1016/j.mee.2015.03.047 · Cited by 114 · see citing works
Zhang, T., Wang, X., Li, T., et al. (2013) · Journal of Materials Chemistry C · doi:10.1039/c3tc31740d · Cited by 113 · see citing works
Detecting 20 nm Wide Defects in Large Area Nanopatterns Using Optical Interferometric Microscopy
Zhou, R., Edwards, C., Arbabi, A., et al. (2013) · Nano Letters · doi:10.1021/nl401622b · Cited by 112 · see citing works
Chkhalo, N. I., Churin, S. A., Пестов, А. Е., et al. (2014) · Optics Express · doi:10.1364/oe.22.020094 · Cited by 111 · see citing works
Material-specific high-resolution table-top extreme ultraviolet microscopy
Eschen, W., Loetgering, L., Schuster, V., et al. (2022) · Light Science & Applications · doi:10.1038/s41377-022-00797-6 · Cited by 108 · see citing works
Extreme ultraviolet vector beams driven by infrared lasers
Hernández-García, C., Turpin, A., Román, J. S., Picón, A., Drevinskas, R., Čerkauskaitė, A., Kazansky, P. G., Durfee, C. G., & Sola, Í. J. (2017) · Optica · doi:10.1364/optica.4.000520 · Cited by 105 · see citing works
“This, combined with the state-of-the-art EUV/X-ray focusing techniques already allowing for focal spots as small as 15 nm [65], will bring the application of vector beams to the nanometric scale, especially in areas such as ultrafast diffraction imaging [25,66] and EUV lithography [67,68].”
BackgroundMojarad, N., Hojeij, M., Wang, L., Gobrecht, J., & Ekinci, Y. (2015) · Nanoscale · doi:10.1039/c4nr07420c · Cited by 102 · see citing works
Freeform imaging systems: Fermat’s principle unlocks “first time right” design
Duerr, F., & Thienpont, H. (2021) · Light Science & Applications · doi:10.1038/s41377-021-00538-1 · Cited by 104 · see citing works
Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics
Huang, Q., Medvedev, V. V., van de Kruijs, R. W. E., et al. (2017) · Applied Physics Reviews · doi:10.1063/1.4978290 · Cited by 103 · see citing works
Atomic level deposition to extend Moore’s law and beyond
Chen, R., Li, Y., Cai, J., Cao, K., & Lee, H. (2020) · International Journal of Extreme Manufacturing · doi:10.1088/2631-7990/ab83e0 · Cited by 99 · see citing works
Exceptional Light Sensitivity by Thiol–Ene Click Lithography
Wang, Q., Cui, H., Wang, X., Hu, Z., Tao, P., Li, M., Wang, J., Tang, Y., Xu, H., & He, X. (2023) · Journal of the American Chemical Society · doi:10.1021/jacs.2c11887 · Cited by 101 · see citing works
Precision glass molding: Toward an optimal fabrication of optical lenses
Zhang, L., & Liu, W. (2016) · Frontiers of Mechanical Engineering · doi:10.1007/s11465-017-0408-3 · Cited by 95 · see citing works
Scalable Fabrication of Metallic Nanogaps at the Sub‐10 nm Level
Luo, S., Hoff, B. H., Maier, S. A., et al. (2021) · Advanced Science · doi:10.1002/advs.202102756 · Cited by 92 · see citing works
Next generation nanolithography based on Ru/Be and Rh/Sr multilayer optics
Чхало, Н. И., & Салащенко, Н. Н. (2013) · AIP Advances · doi:10.1063/1.4820354 · Cited by 90 · see citing works
Nanostructure and Microstructure Fabrication: From Desired Properties to Suitable Processes
van Assenbergh, P., Meinders, E. R., Geraedts, J. M. P., & Dodou, D. (2018) · Small · doi:10.1002/smll.201703401 · Cited by 91 · see citing works
Molecular Layer Deposition of Functional Thin Films for Advanced Lithographic Patterning
Zhou, H., & Bent, S. F. (2011) · ACS Applied Materials & Interfaces · doi:10.1021/am1010805 · Cited by 85 · see citing works
Smith-Purcell radiation from low-energy electrons
Massuda, A., Roques‐Carmes, C., Yang, Y., Kooi, S. E., Yang, Y., Murdia, C., Berggren, K. K., Kaminer, I. E., & Marin Soljacic, A. (2017) · ACS Photonics · doi:10.1021/acsphotonics.8b00743 · Cited by 83 · see citing works
“Physical Review Letters 2016, 117(15): 157401.”
3D direct laser writing using a 405 nm diode laser
Mueller, P., Thiel, M., & Wegener, M. (2014) · Optics Letters · doi:10.1364/ol.39.006847 · Cited by 88 · see citing works
Wan, S., Wei, C., Hu, C., et al. (2020) · International Journal of Machine Tools and Manufacture · doi:10.1016/j.ijmachtools.2020.103673 · Cited by 84 · see citing works
Self-peeling of impacting droplets
de Ruiter, J., Soto, D., & Varanasi, K. K. (2017) · Nature Physics · doi:10.1038/nphys4252 · Cited by 83 · see citing works
Comparison of technologies for nano device prototyping with a special focus on ion beams: A review
Bruchhaus, L., Mazarov, P., Bischoff, L., Gierak, J., Wieck, A. D., & Hövel, H. (2017) · Applied Physics Reviews · doi:10.1063/1.4972262 · Cited by 82 · see citing works
Smart Nanostructured Materials based on Self‐Assembly of Block Copolymers
Kim, J. H., Jin, H. M., Yang, G. G., Han, K. H., Yun, T., Shin, J. Y., Jeong, S., & Kim, S. O. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201902049 · Cited by 83 · see citing works
Feasibility study of broadband efficient “water window” source
Higashiguchi, T., Otsuka, T. P., Yugami, N., et al. (2012) · Applied Physics Letters · doi:10.1063/1.3673912 · Cited by 81 · see citing works
Microdroplet-tin plasma sources of EUV radiation driven by solid-state-lasers (Topical Review)
Versolato, O. O., Sheil, J., Witte, S. M., et al. (2022) · Journal of Optics · doi:10.1088/2040-8986/ac5a7e · Cited by 80 · see citing works
Chkhalo, N. I., Kas’kov, I. A., Малышев, И. В., et al. (2017) · Precision Engineering · doi:10.1016/j.precisioneng.2017.01.004 · Cited by 80 · see citing works
Directed Self‐Assembly of Liquid‐Crystalline Molecular Building Blocks for Sub‐5 nm Nanopatterning
Nickmans, K., & Schenning, A. P. H. J. (2017) · Advanced Materials · doi:10.1002/adma.201703713 · Cited by 79 · see citing works
Wang, C., Zhang, W., Zhao, Z., et al. (2016) · Micromachines · doi:10.3390/mi7070118 · Cited by 79 · see citing works
“This, unfortunately, requires considerable complex optics, new materials and some other challenging technology problems, and presents a great increase in cost for users and researchers, especially for modest investigations [2].”
BackgroundLi, L., Chakrabarty, S., Jiang, J., Zhang, B., Ober, C., & Giannelis, E. P. (2016) · Nanoscale · doi:10.1039/c5nr07334k · Cited by 78 · see citing works
Basu, P., Verma, J., Abhinav, V., Ratnesh, R. K., Singla, Y. K., & Kumar, V. (2025) · International Journal of Molecular Sciences · doi:10.3390/ijms26073027 · Cited by 81 · see citing works
Single-Step Dual-Layer Photolithography for Tunable and Scalable Nanopatterning
Liu, W., Wang, J., Xu, X., et al. (2021) · ACS Nano · doi:10.1021/acsnano.1c03703 · Cited by 77 · see citing works
Stochastic Electronics: A Neuro-Inspired Design Paradigm for Integrated Circuits
Hamilton, T. J., Afshar, S., André, V. S., & Tapson, J. C. (2014) · Proceedings of the IEEE · doi:10.1109/jproc.2014.2310713 · Cited by 71 · see citing works
“Adding to these issues has been the difficulty for IC manufacturers in maintaining this rate of reduction in the minimum feature size of transistors [17].”
BackgroundCoherent extreme-ultraviolet emission generated through frustrated tunnelling ionization
Yun, H., Mun, J. H., Hwang, S. I., Park, S. B., Ivanov, I. A., Nam, C. H., & Kim, K. T. (2018) · Nature Photonics · doi:10.1038/s41566-018-0255-8 · Cited by 74 · see citing works
Extreme Ultraviolet Fractional Orbital Angular Momentum Beams from High Harmonic Generation
Turpin, A., Rego, L., Picón, A., Román, J. S., & Hernández-García, C. (2017) · Scientific Reports · doi:10.1038/srep43888 · Cited by 70 · see citing works
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Chen, J., Sun, M.-Y., Wang, Z., Zhang, Z., Zhang, K., Wang, S., Zhang, Y., Wu, X., Ren, T.-L., Liu, H., et al. (2024) · Nano-Micro Letters · doi:10.1007/s40820-024-01461-x · Cited by 68 · see citing works
Extreme ultraviolet source at 6.7 nm based on a low-density plasma
Higashiguchi, T., Otsuka, T. P., Yugami, N., et al. (2011) · Applied Physics Letters · doi:10.1063/1.3660275 · Cited by 66 · see citing works
Deng, J., Bailey, S., Jiang, S., & Ober, C. K. (2022) · Journal of the American Chemical Society · doi:10.1021/jacs.2c08202 · Cited by 63 · see citing works
Novikov, I. V., Krasnikov, D. V., Lee, I. H., Agafonova, E. E., Serebrennikova, S. I., Lee, Y., Kim, S., Nam, J., Kondrashov, V. A., Han, J., et al. (2025) · Advanced Materials · doi:10.1002/adma.202413777 · Cited by 70 · see citing works
Ultrahigh-printing-speed photoresists for additive manufacturing
Liu, T., Tao, P., Wang, X., Wang, H., He, M., Wang, Q., Cui, H., Wang, J., Tang, Y., Tang, J., et al. (2024) · Nature Nanotechnology · doi:10.1038/s41565-023-01517-w · Cited by 63 · see citing works
“It is noted that the LW of 38 nm is in close proximity to the feature of the currently most advanced 193 nm immersion lithography systems 39,40 .”
Akhsakhalyan, A. D., Kluenkov, E. B., Lopatin, A. Y., et al. (2017) · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · doi:10.1134/s1027451017010049 · Cited by 62 · see citing works
Hardtdegen, H. H., Mikulics, M., Rieß, S., Schuck, M., Saltzmann, T., Simon, U., & Longo, M. (2015) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2015.10.001 · Cited by 61 · see citing works
Huang, J., Xu, L., Zhao, D., et al. (2019) · Chemical Engineering Journal · doi:10.1016/j.cej.2019.123199 · Cited by 61 · see citing works
Fluorine-Containing Styrenic Block Copolymers toward High χ and Perpendicular Lamellae in Thin Films
Jo, S., Jeon, S., Jun, T., et al. (2018) · Macromolecules · doi:10.1021/acs.macromol.8b01325 · Cited by 58 · see citing works
Deep-ultraviolet Smith–Purcell radiation
Ye, Y., Liu, F., Wang, M., et al. (2019) · Optica · doi:10.1364/optica.6.000592 · Cited by 57 · see citing works
Optical Patterning of Two-Dimensional Materials
Kollipara, P. S., Li, J., & Zheng, Y. (2020) · Research · doi:10.34133/2020/6581250 · Cited by 57 · see citing works
“Deep UV rays with a wavelength of 193 to 248nm have achieved a resolution down to sub-100 nm [95].”
BackgroundPrecision imaging multilayer optics for soft X-rays and extreme ultraviolet bands
Barysheva, M. M., Пестов, А. Е., Салащенко, Н. Н., et al. (2012) · Physics-Uspekhi · doi:10.3367/ufne.0182.201207c.0727 · Cited by 57 · see citing works
Thakur, N., Vockenhuber, M., Ekinci, Y., Watts, B., Giglia, A., Mahne, N., Nannarone, S., Castellanos, S., & Brouwer, A. M. (2022) · ACS Materials Au · doi:10.1021/acsmaterialsau.1c00059 · Cited by 57 · see citing works
“3,4 The steep jump in the wavelength from 193 to 13.5 nm has posed numerous challenges, and a key factor that will determine the future improvements of EUV lithography (EUVL) is the choice of the photoresist and its solubility-switching chemistry.”
InfluentialScalable and High-Throughput Top-Down Manufacturing of Optical Metasurfaces
Lee, T., Lee, C., Oh, D. K., Badloe, T., Ok, J. G., & Rho, J. (2020) · Sensors · doi:10.3390/s20154108 · Cited by 56 · see citing works
“Moreover, the immersion method of using water as the background medium rather than air can also realize higher resolutions due to the increase of the refractive index, n [56,64,65].”
MethodReduction in Cross-Talk Errors in a Six-Degree-of-Freedom Surface Encoder
Matsukuma, H., Ishizuka, R., Furuta, M., et al. (2019) · Nanomanufacturing and Metrology · doi:10.1007/s41871-019-00039-1 · Cited by 54 · see citing works
Ten years of two-color photolithography [Invited]
Λιάρος, Ν., & Fourkas, J. T. (2019) · Optical Materials Express · doi:10.1364/ome.9.003006 · Cited by 54 · see citing works
The means of managing momentum: Bridging technological paths and organisational fields
Schubert, C., Sydow, J., & Windeler, A. (2013) · Research Policy · doi:10.1016/j.respol.2013.04.004 · Cited by 52 · see citing works
Ohashi, H., Higashiguchi, T., Suzuki, Y., et al. (2014) · Applied Physics Letters · doi:10.1063/1.4883475 · Cited by 53 · see citing works
High Energy and Short Pulse Lasers
Viskup, R. (2016) · InTech eBooks · doi:10.5772/61628 · Cited by 55 · see citing works
Mixed-ligand zinc-oxoclusters: Efficient chemistry for high resolution nanolithography
Thakur, N., Bliem, R., Mochi, I., Vockenhuber, M., Ekinci, Y., & Castellanos, S. (2020) · Journal of Materials Chemistry C · doi:10.1039/d0tc03597a · Cited by 52 · see citing works
Hsu, C., Dong, X., Lin, Z., Ni, B., Lu, P., Jiang, Z., Tian, D., Shi, A., Thomas, E. L., & Cheng, S. Z. D. (2015) · ACS Nano · doi:10.1021/acsnano.5b06038 · Cited by 51 · see citing works
A facile way of fabricating a flexible and conductive cotton fabric
Liu, S., Hu, M., & Yang, J. (2016) · Journal of Materials Chemistry C · doi:10.1039/c5tc03679h · Cited by 52 · see citing works
Three-dimensional nanolithography guided by DNA modular epitaxy
Shen, J., Sun, W., Liu, D., Schaus, T. E., & Yin, P. (2021) · Nature Materials · doi:10.1038/s41563-021-00930-7 · Cited by 49 · see citing works
Beryllium-based multilayer X-ray optics
Полковников, В. Н., Салащенко, Н. Н., Свечников, М. В., et al. (2019) · Physics-Uspekhi · doi:10.3367/ufne.2019.05.038623 · Cited by 51 · see citing works
Evidencing the nonlinearity independence of resolution in femtosecond laser ablation
García-Lechuga, M., Uteza, O. P., Sanner, N., & Grojo, D. (2020) · Optics Letters · doi:10.1364/ol.382610 · Cited by 48 · see citing works
Huang, J., Gui, C., Ma, H., et al. (2020) · Composites Science and Technology · doi:10.1016/j.compscitech.2020.108547 · Cited by 50 · see citing works
Abramov, I. S., Gospodchikov, E. D., & Shalashov, A. G. (2018) · Physical Review Applied · doi:10.1103/physrevapplied.10.034065 · Cited by 49 · see citing works
Gui, C., Yao, C., Huang, J., et al. (2019) · Applied Surface Science · doi:10.1016/j.apsusc.2019.144935 · Cited by 49 · see citing works
Fragmentation dynamics of liquid–metal droplets under ultra-short laser pulses
Basko, M. M., Krivokorytov, M. S., Vinokhodov, A. Y., et al. (2017) · Laser Physics Letters · doi:10.1088/1612-202x/aa539b · Cited by 48 · see citing works
Diulus, J. T., Frederick, R. T., Hutchison, D. C., Lyubinetsky, I., Addou, R., Nyman, M., & Herman, G. S. (2020) · ACS Applied Nano Materials · doi:10.1021/acsanm.9b02387 · Cited by 50 · see citing works
Li, X., Li, J., Wang, C., et al. (2019) · Journal of Materials Chemistry C · doi:10.1039/c8tc06480f · Cited by 47 · see citing works
Rohdenburg, M., Thakur, N., Cartaya, R., Castellanos, S., & Swiderek, P. (2021) · Physical Chemistry Chemical Physics · doi:10.1039/d1cp02334a · Cited by 46 · see citing works
Luo, S., Mancini, A., Berté, R., et al. (2021) · Advanced Materials · doi:10.1002/adma.202100491 · Cited by 46 · see citing works
Nie, Y., Shafer, D. R., Ottevaere, H., et al. (2021) · Optics Express · doi:10.1364/oe.426207 · Cited by 46 · see citing works
Suppressing of secondary electron diffusion for high-precision nanofabrication
Wang, Q., Zhou, Y., Wang, X., Gao, H., Shu, Z., Hu, Z., Tao, P., Ekinci, Y., Vockenhuber, M., Chen, Y., et al. (2023) · Materials Today · doi:10.1016/j.mattod.2023.06.005 · Cited by 46 · see citing works
Roy, N. K., & Cullinan, M. A. (2018) · Precision Engineering · doi:10.1016/j.precisioneng.2018.04.007 · Cited by 44 · see citing works
Methodology for standard cell compliance and detailed placement for triple patterning lithographyPreprint
Yu, B., Xu, X., Gao, J.-R., et al. (2014) · arXiv (Cornell University) · doi:10.48550/arxiv.1402.2635 · Cited by 43 · see citing works
“INTRODUCTION As the feature size of semiconductor process technology nodes further scales to sub-16nm, triple patterning lithography (TPL) is regarded as one of the most promising lithography candidates, along with extreme ultra-violet lithography (EUVL), directed self-assembly (DSA), and…”
BackgroundTop‐Down Fabrication of Ordered Nanophotonic Structures for Biomedical Applications
Wen, B., Yang, J., Hu, C., Cai, J., & Zhou, J. (2023) · Advanced Materials Interfaces · doi:10.1002/admi.202300856 · Cited by 43 · see citing works
- Authors
- Wagner, C., & Harned, N.
- Affiliations
- ASML (Netherlands) (NL)
- Corresponding author
- Wagner, Christian
- ORCID
- Wagner, Christian
- Venue
- Nature Photonics
- Published
- 2010-01
- Volume
- 4
- Issue
- 1
- Pages
- 24-26
- ISSN
- 1749-4885 (ISSN-L)
- 1749-4893
- OpenAlex
- W2975639389
- Cited by
- 650
- References
- 0
- Citations by year
- 2026: 46 · 2025: 48 · 2024: 52 · 2023: 52 · 2022: 52 · 2021: 40 · 2020: 59 · 2019: 44 · 2018: 42 · 2017: 44 · 2016: 37 · 2015: 40 · 2014: 35 · 2013: 25 · 2012: 16
- FWCI
- 8.99
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Nature Photonics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- EUV lithography, photolithography, integrated circuit fabrication, semiconductor manufacturing, high-volume manufacturing
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
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