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Interface resistance switching at a few nanometer thick perovskite manganite active layers
Abstract
We have studied the transport and resistance switching properties of Ti∕Sm0.7Ca0.3MnO3 (n unit cells)/La0.7Sr0.3MnO3 [Ti∕SCMO(n)∕LSMO] layered structures. The metal-to-metal contact of the Ti/LSMO junction (n=0) does not exhibit resistance switching effect, while the insertion of a very thin insulating SCMO layer (n⩾1) induces resistance switching effect. As the SCMO layer thickness (n) increases, the resistance switching amplitude grows and the response gets faster. This indicates that the SCMO layer as thin as several u.c. adjacent to the interface works as an active source for the resistance switching effect.
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Research works printed but not linked: 20
- 2000, Appl. Phys. Lett., 76, 2749, 10.1063/1.126464 · DOI · Paper page
- 2000, Appl. Phys. Lett., 77, 139, 10.1063/1.126902 · DOI · Paper page
- 2003, Appl. Phys. Lett., 83, 957, 10.1063/1.1590741 · DOI · Paper page
- 2003, Appl. Phys. Lett., 82, 3077, 10.1063/1.1572960 · doi:10.1063/1.1572960
- 2004, Appl. Phys. Lett., 85, 4073, 10.1063/1.1812580 · DOI · Paper page
- 2004, Phys. Rev. B, 70, 224403, 10.1103/PhysRevB.70.224403 · DOI · Paper page
- 2005, Appl. Phys. Lett., 86, 012107, 10.1063/1.1845598 · DOI · Paper page
- 2004, Appl. Phys. Lett., 85, 5655, 10.1063/1.1831560 · DOI · Paper page
- 2005, Phys. Rev. B, 71, 045305, 10.1103/PhysRevB.71.045305 · DOI · Paper page
- 2005, J. Appl. Phys., 98, 033715, 10.1063/1.2001146 · DOI · Paper page
- 2005, Jpn. J. Appl. Phys., Part 2, 44, L1241, 10.1143/JJAP.44.L1241 · doi:10.1143/jjap.44.l1241
- 2005, Appl. Phys. Lett., 87, 233506, 10.1063/1.2139843 · DOI
- 2006, Appl. Phys. Lett., 88, 042901, 10.1063/1.2162860 · DOI
- Tech. Dig. - Int. Electron Devices Meet., 2002, 193
- Tech. Dig. - Int. Electron Devices Meet., 2004, 587
- 2004, Phys. Rev. Lett., 92, 178302, 10.1103/PhysRevLett.92.178302 · DOI · Paper page
- 2006, Appl. Phys. Lett., 88, 033510, 10.1063/1.2164917 · DOI
- 2006, Phys. Rev. Lett., 95, 266403, 10.1103/PhysRevLett.95.266403 · DOI
- 1996, Phys. Rev. B, 53, R1689, 10.1103/PhysRevB.53.R1689 · DOI
- 2004, Phys. Rev. B, 70, 014432, 10.1103/PhysRevB.70.014432 · doi:10.1103/physrevb.70.014432
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Metadata
- Authors
- Sawa, A., Fujii, T., Kawasaki, M., & Tokura, Y.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2006-06-05
- Volume
- 88
- Issue
- 23
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2026264728
- Cited by
- 172
- References
- 0
- FWCI
- 9.11
- Type
- journal article
- Language
- en
- Open access
- closed
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