Electronic properties of two-dimensional systems

Cites (1,635)

Items 201–400 of 1,635

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2. LEED study of the stepped surface of vicinal Si (100)
   Ray Kaplan · 1980 · Surface Science
3. Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields
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4. Atomic densities of states near Si (111) surfaces
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5. Electrodynamics of quasi-two-dimensional electrons
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6. Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
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7. Generalization of the Ruderman-Kittel-Kasuya-Yosida Interaction for Nonspherical Fermi Surfaces
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8. Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
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9. Effects of Interactions on Non-Metallic Behaviors in Two-Dimensional Disordered Systems
   Hidetoshi Fukuyama · 1980 · Journal of the Physical Society of Japan
10. Tunneling in thin MOS structures
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11. Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructures
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12. Two-Dimensional Electrical Conductivity in Quench-Condensed Metal Films
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13. Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
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14. Tunneling of electrons from Si into thermally grown SiO2
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15. g Factor of the Two-Dimensional Interacting Electron Gas
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16. Anderson Localization in d<~2 Dimensions: A Self-Consistent Diagrammatic Theory
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17. Selection Rules Connecting Different Points in the Brillouin Zone
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18. Progress in Solid State Chemistry
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19. Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice
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20. Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in n -Type Silicon
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21. Conductivity and mobility edges for two-dimensional disordered systems
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22. Electronic properties of InAsGaSb superlattices
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23. Magnetic Susceptibility of InSb
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24. Phase diagram of the two-dimensional electron liquid
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25. Far infrared emission from plasma oscillations of Si inversion layers
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26. Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. III. Many-Site Approximation
    Tsuneya Ando · 1974 · Journal of the Physical Society of Japan
27. Nonmetallic Conduction in Thin Metal Films at Low Temperatures.
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28. Electron States in Crystals with “nipi‐Superstructure”
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29. Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion Layers
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30. Quantized Surface States of a Narrow-Gap Semiconductor
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31. Influence of defects on the electronic structure of zinc oxide surfaces
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32. Study of melting in two dimensions
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33. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation
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34. Constancy of Minimum Metallic Conductivity in Two Dimensions
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35. Dielectric Anomaly and the Metal-Insulator Transition in n -Type Silicon
    Theodore G. Castner, N. K. Lee, G. S. Cieloszyk · 1975 · Physical Review Letters
36. Cyclotron resonance of electrons in surface space-charge layers on silicon
    G. Abstreiter, J. P. Kotthaus, J. Frederick Koch · 1976 · Physical review. B, Solid state
37. Interface states on semiconductor/insulator surfaces
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38. Physics of Narrow Gap Semiconductors
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39. Electron-Electron Interactions Continuously Variable in the Range 2.1>rs>0.9
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40. Quantization of coupled orbits in metals
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41. Correlations in a two-dimensional electron system
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42. The interface EM modes of a “surface quantized” plasma layer on a semiconductor surface
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43. The Physics of MOS Insulators
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44. Inter-subband optical absorption in space-charge layers on semiconductor surfaces
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45. Experimental study of quantum size effects in thin metal films by electron tunneling
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46. The effect of randomness in the distribution of impurity atoms on FET thresholds
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47. Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
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48. Theory of Two-Dimensional Melting.
    Bertrand I. Halperin, David R. Nelson · 1978 · Physical Review Letters
49. New method for scaling theory of localization. II. Multichannel theory of a "wire" and possible extension to higher dimensionality
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50. Hall Effect and Conductivity in Porous Media
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51. Crystallization of electrons on the surface of liquid helium
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52. SiSiO2 interface characterization by ESCA
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53. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
    Horst L. Stormer, Aron Pinczuk, Arthur C. Gossard · 1981 · Applied Physics Letters
54. Two-dimensional electron transport in semiconductor layers II: Screening
    Peter J. Price · 1981 · Journal of Vacuum Science and Technology
55. Spectroscopy of electrons in image-potential-induced surface states outside liquid helium
    C. C. Grimes, Thomas M. Brown, Michael L Burns · 1976 · Physical review. B, Solid state
56. Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields II. Single-Site Approximation under Strong Fields
    Tsuneya Ando · 1974 · Journal of the Physical Society of Japan
57. Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice
    Gottfried H. Döhler, H. Künzel, Diego J. Olego · 1981 · Physical Review Letters
58. Electron-spectroscopic studies of the early stages of the oxidation of Si
    C. Michael Garner, Ingolf Lindau, Chung‐Yi Su · 1979 · Physical review. B, Condensed matter
59. Effective Hamiltonians and bindings energies of Wannier excitons in polar semiconductors
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60. Mobility of Electrons on the Surface of Liquid He4
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61. Theory of Surface Waves Coupled to Surface Carriers
    Masatoshi Nakayama · 1974 · Journal of the Physical Society of Japan
62. Nodal Hydrogenic Wave Functions of Donors on Semiconductor Surfaces
    Jules D. Levine · 1965 · Physical Review
63. On the role of scattering by surface roughness in silicon inversion layers
    Yingchun Cheng, E. A. Sullivan · 1973 · Surface Science
64. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
    S. Mori, Toshiya Ando · 1979 · Physical review. B, Condensed matter
65. Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity Scattering
    Eric D. Siggia, P. C. Kwok · 1970 · Physical review. B, Solid state
66. Plasmons in inversion layers
    Thomas N. Theis · 1980 · Surface Science
67. Finite-size scaling approach to Anderson localisation. II. Quantitative analysis and new results
    J.‐L. Pichard, G. Sarma · 1981 · Journal of Physics C Solid State Physics
68. Observation of Surface Bound State and Two-Dimensional Energy Band by Electron Tunneling
    Daniel C. Tsui · 1970 · Physical Review Letters
69. Electrons in surface states on liquid helium
    C. C. Grimes · 1978 · Surface Science
70. Polar surfaces of zinc oxide crystals
    Gerhard Heiland, P. Kunstmann · 1969 · Surface Science
71. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
    Otto Leistiko, Andrew S. Grove, C. T. Sah · 1965 · IEEE Transactions on Electron Devices
72. Electrical and photoelectrical transport properties of Langmuir-Blodgett films and a discussion of possible device applications
    P.S. Vincett, Gareth G Roberts · 1980 · Thin Solid Films
73. Warm Electrons on the Liquid 4He Surface
    Motohiko Saitoh · 1977 · Journal of the Physical Society of Japan
74. Conductivity Cusp in a Disordered Metal
    T. F. Rosenbaum, Klaus Andres, Gordon A. Thomas · 1981 · Physical Review Letters
75. On the interaction of surface electrons in liquid helium with oscillations of the vapor-liquid interface
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76. Surface Physics of Materials
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77. Quantum properties of surface space-charge layers
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78. Pinning and conductivity of two-dimensional charge-density waves in magnetic fields
    Hidetoshi Fukuyama, Patrick A. Lee · 1978 · Physical review. B, Condensed matter
79. Plasmon Mechanism of Superconductivity in Two- and Three-Dimensional Electron Systems
    Yasutami Takada · 1978 · Journal of the Physical Society of Japan
80. Characterization of low 1/f noise in MOS transistors
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81. Properties of an Excess Electron in Liquid Helium: The Effect of Pressure on the Properties of the Negative Ion
    B. E. Springett, Morrel H. Cohen, Joshua Jortner · 1967 · Physical Review
82. Periodic lattice distortions and charge density waves in one- and two-dimensional metals
    Richard Henry Friend, D. Jérôme · 1979 · Journal of Physics C Solid State Physics
83. Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
    Horst L. Stormer, Arthur C. Gossard, W. Wiegmann · 1981 · Applied Physics Letters
84. Effects of Mutual Interactions in Weakly Localized Regime of Disordered Two-Dimensional Systems. I. Magnetoresistance and Spin-Susceptibility
    Hidetoshi Fukuyama · 1981 · Journal of the Physical Society of Japan
85. High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surface
    Z. A. Weinberg, W. C. Johnson, Murray A. Lampert · 1976 · Journal of Applied Physics
86. Variable range hopping in a non-uniform density of states
    E. M. Hamilton · 1972 · Philosophical magazine
87. Structures Grown by Molecular Beam Epitaxy
    L.L. Chang, L. Esaki, Webster E. Howard · 1973 · Journal of Vacuum Science and Technology
88. Shubnikov—de Haas Oscillations in a Semiconductor Superlattice
    L.L. Chang, H. Sakaki, C. A. Chang, L. Esaki · 1977 · Physical Review Letters
89. Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems
    S. Das Sarma, Anupam Madhukar · 1980 · Physical review. B, Condensed matter
90. Two-Dimensional Localization in Thin Copper Films
    L. Van den Dries, C. Van Haesendonck, Y. Bruynseraede · 1981 · Physical Review Letters
91. Electronic properties of the AlAs-GaAs (001) interface and superlattice
    J. N. Schulman, T. C. McGill · 1979 · Physical review. B, Condensed matter
92. Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
    Daniel C. Tsui, Th. Englert, A.Y. Cho · 1980 · Physical Review Letters
93. Physics in High Magnetic Fields
    Chikazumi, Sōshin, Miura, Noború · 1981 · Springer series in solid-state sciences
94. Plasma Frequency of the Electron Gas in Layered Structures
    D. Grecu · 1973 · Physical review. B, Solid state
95. SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
    A. Goetzberger, Volker Heine, Edward H. Nicollian · 1968 · Applied Physics Letters
96. Quantitative evaluation of random distributed steps at interfaces and surfaces
    M. Henzler · 1978 · Surface Science
97. First-order optical and intervalley scattering in semiconductors
    David K. Ferry · 1976 · Physical review. B, Solid state
98. Effect of Stress on the Donor Wave Functions in Germanium
    H. Fritzsche · 1962 · Physical Review
99. The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
    Shinji Kawaji · 1969 · Journal of the Physical Society of Japan
100. Theory of Surface Polarons
     Josef Sak · 1972 · Physical review. B, Solid state
101. Electron crystallization
     CHRISTOPHER M. CARE, Norman Henry March · 1975 · Advances In Physics
102. Inelastic light scattering by charge carrier excitations in two-dimensional plasmas: Theoretical considerations
     E. Burstein, Aron Pinczuk, D. L. Mills · 1980 · Surface Science
103. Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs- AlxGa1−xAs Heterojunctions
     G. Abstreiter, K. H. Ploog · 1979 · Physical Review Letters
104. Negative Magnetoresistance in Silicon (100) MOS Inversion Layers
     Yoichi Kawaguchi, Shinji Kawaji · 1980 · Journal of the Physical Society of Japan
105. Charge Density Wave State of Two-Dimensional Electrons in Strong Magnetic Fields
     Daijiro Yoshioka, Hidetoshi Fukuyama · 1979 · Journal of the Physical Society of Japan
106. Interaction of Slow Electrons with the Surface of a Model Dielectric: Theory of Surface Polarons
     E. Evans, D. L. Mills · 1973 · Physical review. B, Solid state
107. Self-Diffusion in the Two-Dimensional, Classical Electron Gas
     J. P. Hansen, D. Levesque, J. J. Weis · 1979 · Physical Review Letters
108. Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical Spectra
     Tsuneya Ando, Shojiro Mori · 1979 · Journal of the Physical Society of Japan
109. Electron scattering in silicon inversion layers by oxide and surface roughness
     A. Hartstein, Tak H. Ning, Alan B. Fowler · 1976 · Surface Science
110. Experimental study of localization in thin wires
     Nicholas J. Giordano · 1980 · Physical review. B, Condensed matter
111. Experimental Study of Anderson Localization in Thin Wires
     Nicholas J. Giordano, W. Gilson, D. E. Prober · 1979 · Physical Review Letters
112. Two-dimensional electron gas m.e.s.f.e.t. structure
     D. Delagebeaudeuf, P. Delescluse, P. Étienne · 1980 · Electronics Letters
113. Iteration methods for calculating self-consistent fields in semiconductor inversion layers
     Frank Stern · 1970 · Journal of Computational Physics
114. The observation of interaction and localisation effects in a two-dimensional electron gas at low temperatures
     Michael J. Uren, R A Davies, M. Pepper · 1980 · Journal of Physics C Solid State Physics
115. The two-dimensional electron gas in a strong magnetic field
     Hiroyuki Fukuyama, P. M. Platzman, P. W. Anderson · 1978 · Surface Science
116. Numerical experiment on two-dimensional electron liquids. Thermodynamic properties and onset of short-range order
     Hiroo Totsuji · 1978 · Physical Review A
117. Many-body effects in n -type Si inversion layers. I. Effects in the lowest subband
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118. Polytype Superlattices and Multi-Heterojunctions
     L. Esaki, L. L. Chang, Emilio E. Mendez · 1981 · Japanese Journal of Applied Physics
119. Electron Exchange Energy in Si Inversion Layers
     Frank Stern · 1973 · Physical Review Letters
120. Effective-mass approximation in the presence of an interface
     Lu Jeu Sham, M. Nakayama · 1979 · Physical review. B, Condensed matter
121. Direct Spectroscopic Observation of Electrons in Image-Potential States Outside Liquid Helium
     C. C. Grimes, Thomas M. Brown · 1974 · Physical Review Letters
122. Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
     Lu Jeu Sham, S. J. Allen, Avid Kamgar, Daniel C. Tsui · 1978 · Physical Review Letters
123. Oscillations in MOS tunneling
     G. Lewicki, Joseph L. Maserjian · 1975 · Journal of Applied Physics
124. Two-dimensional magnetoplasmon in the silicon inversion layer
     Thomas Theis, J. P. Kotthaus, Phillip J. Stiles · 1977 · Solid State Communications
125. Electrical and Optical Properties of Crystals with “nipi‐Superstructure”
     Gottfried H. Döhler · 1972 · physica status solidi (b)
126. Theory of Quantum Crystals
     N. R. Werthamer · 1969 · American Journal of Physics
127. Phonons in a half space
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128. Magnetic and nonmagnetic impurities in two-dimensional metals
     Baruch Fischer, Michael W. Klein · 1975 · Physical review. B, Solid state
129. Numerical Study of Electron Localization in Anderson Model for Disordered Systems: Spatial Extension of Wavefunction
     Sayaka Yoshino, Makoto Okazaki · 1977 · Journal of the Physical Society of Japan
130. Theory of cyclotron resonance of interacting electrons in a semiconducting surface inversion layer
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131. Disordered system withn orbitals per site: 1/n expansion
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132. Hall Effect in Two-Dimensional Disorderd Systems
     Hidetoshi Fukuyama · 1980 · Journal of the Physical Society of Japan
133. High Electron Mobility Transistor Logic
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134. Explanation of quantized-Hall-resistance plateaus in heterojunction inversion layers
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135. Effective Mass and g Factor of Interacting Electrons in the Surface Inversion Layer of Silicon
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136. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces
     Tai Satô, Yoshiyuki Takeishi, Hisashi Hara · 1969 · Japanese Journal of Applied Physics
137. Real-Space Scaling Studies of Localization
     Patrick A. Lee · 1979 · Physical Review Letters
138. Infrared magneto-transmittance of a two-dimensional electron gas
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139. Quantum theory of longitudinal dielectric response properties of a two-dimensional plasma in a magnetic field
     Norman J. M. Horing, Musa Yildiz · 1976 · Annals of Physics
140. Interface excitations in metal-insulator-semiconductor structures
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141. Raman scattering in superlattices: Anisotropy of polar phonons
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142. Intersubband spectroscopy of two dimensional electron gases: Coulomb interactions
     Aron Pinczuk, John M. Worlock, Horst L. Stormer · 1980 · Solid State Communications
143. Optical Properties of the Interface between Si and Its Thermally Grown Oxide
     D. E. Aspnes, J. B. Theeten · 1979 · Physical Review Letters
144. Relationship between trapped holes and interface states in MOS capacitors
     G.J. Hu, W. C. Johnson · 1980 · Applied Physics Letters
145. Temperature dependence of threshold current for quantum-well AlxGa1−xAs-GaAs heterostructure laser diodes
     R. Chin, N. Holonyak, Bruce A. Vojak · 1980 · Applied Physics Letters
146. Superconductivity at dielectric pairing of spatially separated quasiparticles
     Yu. E. Lozovik, Vladimir I. Yudson · 1976 · Solid State Communications
147. Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
     L.L. Chang, N. Kawai, G.A. Sai-Halasz · 1979 · Applied Physics Letters
148. Theory of the electronic structure of the Si-Si O2 interface
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149. Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized Regimes
     S. J. Allen, Daniel C. Tsui, F. DeRosa · 1975 · Physical Review Letters
150. Velocity of surface carriers in inversion layers on silicon
     Rena Coen, Rikky Muller · 1980 · Solid-State Electronics
151. Observation of Cyclotron Resonance in Surface-Bound Electrons on Liquid Helium
     Thomas M. Brown, C. C. Grimes · 1972 · Physical Review Letters
152. Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer
     Avid Kamgar, P. Kneschaurek, G. Dorda · 1974 · Physical Review Letters
153. Conductivity and mobility edges in disordered systems. II. Further calculations for the square and diamond lattices
     Donald C. Licciardello, D. J. Thouless · 1978 · Journal of Physics C Solid State Physics
154. Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers
     G. Dorda · 1971 · Journal of Applied Physics
155. Electronic states at the silicon-silicon dioxide interface
     Yingchun Cheng · 1977 · Progress in Surface Science
156. Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate Semiconductor
     Gene A. Baraff, Joel A. Appelbaum · 1972 · Physical review. B, Solid state
157. Surface Physics of Phosphors and Semiconductors
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158. Semiconductor superfine structures by computer-controlled molecular beam epitaxy
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159. Electronic levels in surface space charge layers on Si(100)
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160. International Electron Devices Meeting. Technical Digest
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161. A revised model for the oxidation of Si by oxygen
     Joseph Blanc · 1978 · Applied Physics Letters
162. Stoichiometry of thin silicon oxide layers on silicon
     T. W. Sigmon, W. K. Chu, Eriabu Lugujjo · 1974 · Applied Physics Letters
163. Observation of intersubband excitations in a multilayer two dimensional electron gas
     Aron Pinczuk, Horst L. Stormer, R. Dingle · 1979 · Solid State Communications
164. Polaronic aspects of two-dimensional electrons on films of liquid He
     S. A. Jackson, P. M. Platzman · 1981 · Physical review. B, Condensed matter
165. Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-Si O2 Interface
     L. C. Feldman, P. J. Silvėrman, J. S. Williams · 1978 · Physical Review Letters
166. Surfons and the Electron Mobility in Silicon Inversion Layers
     Hiroshi Ezawa, Shinji Kawaji, Koichi Nakamura · 1974 · Japanese Journal of Applied Physics
167. Fluctuations and Physical Properties of the Two-Dimensional Crystal Lattice
     Y. Imry, Leon Gunther · 1971 · Physical review. B, Solid state
168. Hall voltage dependence on inversion-layer geometry in the quantum Hall-effect regime
     R. W. Rendell, S. M. Girvin · 1981 · Physical review. B, Condensed matter
169. Elements of solid state theory
     Henri Amar · 1959 · Journal of the Franklin Institute
170. Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory
     Fusayoshi J. Ohkawa, Yasutada Uemura · 1977 · Journal of the Physical Society of Japan
171. Resonant Raman Scattering in a Semiconductor Superlattice
     Pascal Manuel, G.A. Sai-Halasz, L. L. Chang · 1976 · Physical Review Letters
172. Electronic energy-band structure of α quartz
     Eduardo Calabrese, W. Beall Fowler · 1978 · Physical review. B, Condensed matter
173. Quantum size effects in semiconducting and semimetallic films
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174. Electron density of states and energy relaxation time in magnetic field
     B. L. Altshuler, A. G. Aronov · 1981 · Solid State Communications
175. Electrical Transport Properties in a Superlattice
     Paul A. Lebwohl, Raphael Tsu · 1970 · Journal of Applied Physics
176. The effect of inelastic electron scattering on the conductivity of very thin wires
     D. J. Thouless · 1980 · Solid State Communications
177. The infrared optical properties of SiO2 and SiO2 layers on silicon
     Herbert R. Philipp · 1979 · Journal of Applied Physics
178. Many-body effects in n -type Si inversion layers. II. Excitations to higher subbands
     B. Vinter · 1977 · Physical review. B, Solid state
179. Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.
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180. Cyclotron Resonance of Electrons in an Inversion Layer on Si
     G. Abstreiter, P. Kneschaurek, J. P. Kotthaus · 1974 · Physical Review Letters
181. Inter-subband optical transitions in a surface space-charge layer
     Toshiya Ando · 1977 · Solid State Communications
182. Electrodynamics and thermodynamics of a classical electron surface layer
     Alexander L. Fetter · 1974 · Physical review. B, Solid state
183. Disorder-induced carrier localization in silicon surface inversion layers
     Emil Arnold · 1974 · Applied Physics Letters
184. Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion Layers
     Daniel C. Tsui, S. J. Allen · 1974 · Physical Review Letters
185. Evidence for a Collective Ground State in Si Inversion Layers in the Extreme Quantum Limit
     Barbara A. Wilson, S. J. Allen, Daniel C. Tsui · 1980 · Physical Review Letters
186. Diffusion and logarithmic corrections to the conductivity of a disordered non-interacting 2D electron gas: power law localisation
     M. Kaveh, N. F. Mott · 1981 · Journal of Physics C Solid State Physics
187. Theory of weakly localized regime of the Anderson localizaton in two dimensions
     Hidetoshi Fukuyama · 1982 · Surface Science
188. Two-dimensional electronic structure in InAs-GaSb superlattices
     H. Sakaki, L.L. Chang, G.A. Sai-Halasz · 1978 · Solid State Communications
189. A lambda transition in a classical electron film
     Roger W. Hockney, Thomas M. Brown · 1975 · Journal of Physics C Solid State Physics
190. Gallium Arsenide and Related Compounds, 1978
     C.S. Brown · 1979 · Electronics and Power
191. Effective mass and collision time of (100) Si surface electrons
     Frank F. Fang, Alan B. Fowler, A. Hartstein · 1977 · Physical review. B, Solid state
192. Transverse Hall Effect in the Electric Quantum Limit
     Frank Stern · 1968 · Physical Review Letters
193. Electron-Tunneling Studies of a Quantized Surface Accumulation Layer
     Daniel C. Tsui · 1971 · Physical review. B, Solid state
194. Localisation and the two-dimensional Hall effect
     D. J. Thouless · 1981 · Journal of Physics C Solid State Physics
195. Effect of electron-electron interactions on hopping and on delocalization
     M. Pollak · 1980 · Philosophical Magazine B
196. Tunneling from Electronic Bubble States in Liquid Helium through the Liquid-Vapor Interface
     W. Schoepe, George W. Rayfield · 1973 · Physical Review A
197. Stability and image-potential-induced screening of electron vibrational excitations in a three-layer structure
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198. Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices
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199. Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices
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200. Image potential near a gradual interface between two dielectrics
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