Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

Cites (1,635)

Items 1,601–1,635 of 1,635

  1. Anisotropic relaxation time in quantized (110) silicon inversion layers
    A. R. Nelson · 1974 · Journal of Applied Physics
  2. Correct form of energy-balance equation for intervalley and intersubband scattering in semiconductors
    P. K. Basu · 1979 · Physical review. B, Condensed matter
  3. Hall Mobility of Electrons in Silicon Surface Inversion Layers
    Takuo Sugano, H. Sakaki, Koitiro Hoh · 1968 · Japanese Journal of Applied Physics
  4. PHÉNOMÈNES DE TRANSPORT EN SURFACE DANS LES SEMI-CONDUCTEURS
    J. Grosvalet · 1968 · Le Journal de Physique Colloques
  5. Electron mobility in Si-mosfets with an additional impalanted channel
    Wolfgang M. Fischer, Erwin P. Jacobs, I. Eisele · 1978 · Chemical Engineering Science
  6. Shubnikov-De Haas Oscillations Caused by a Two-Dimensional Leakage Channel on Silicon Mosfets Induced by Electron Irradiation
    M. Roos, G. Landwehr · 1978 · IEEE Transactions on Nuclear Science
  7. The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase
    Mats Johnson, Gowri Srinivasan · 1978 · Physica Scripta
  8. Velocity Autocorrelation Function in a Strongly Coupled, Magnetized, Pure Electron Plasma
    Rodney L. Varley, John E. Tigner · 1979 · Physical Review Letters
  9. On the theory of a natural (orientational) superlattice in a two‐dimensional electron gas
    V. A. Volkov, V. B. Sandomirskiǐ · 1979 · physica status solidi (b)
  10. Internal electroabsorption in inverted heterostructures: An optical method for probing epitaxial layers
    N. Bottka, Marian E. Hills · 1978 · Applied Physics Letters
  11. Quantum spatial distribution of a non-degenerate free charge carrier gas in semiconductors subject to high external electric fields at low temperatures
    Yitzhak Weissman · 1976 · Journal of Physics C Solid State Physics
  12. The transient response of hot electrons in quasi-two-dimensional semiconductors
    J. Scott Moore, Pankaj Kumar Das · 1979 · Journal of Applied Physics
  13. Effect of electron-electron scattering on electrical conduction in inversion layers
    J C Inkson, K B Ma · 1979 · Journal of Physics C Solid State Physics
  14. Electron energies in n-inversion layers of Si/SiO2 calculated without effective-mass approximation
    Florian Schulte · 1980 · Surface Science
  15. Abstract: Spectroscopy of surface space-charge layers
    F. A. Koch · 1976 · Journal of Vacuum Science and Technology
  16. Low-lying collective modes in the charge density wave state inn-type inversion layers of semiconductors
    Y. Ono, U. Paulus · 1979 · The European Physical Journal B
  17. Van der Waals Theory of the Phase Transition in Quasi‐Two‐Dimensional Electron Gas in Magnetic Semiconductors
    V. G. Baru, E. V. Grekov · 1981 · physica status solidi (b)
  18. The calculation of the carrier concentration in a symmetrical misim structure inversion layer
    Ž. Spasojević, V. Milanović, D.A. Tjapkin · 1980 · Solid State Communications
  19. On the magnetic field dependence of resonance line width in the inversion layers
    Mahendra Prasad · 1978 · Solid State Communications
  20. Bound states of electrons and optical phonons under conditions of one‐dimensional quantizing
    V. S. Sardaryan, M. M. Arakelyan · 1978 · physica status solidi (b)
  21. Effects of a perpendicular electric field on a quasi-two-dimensional system: Hydrogenic model
    Basab B. Dasgupta · 1980 · Journal of Physics and Chemistry of Solids
  22. Hall measurements on trap states in n-channel Si MOSFETS at 77 K
    B. T. Moore, David K. Ferry · 1980 · Solid State Communications
  23. MAGNÉTORÉSISTANCE DANS UNE COUCHE ÉLECTRONIQUE D'INVERSION SUR UNE SURFACE (100) D'UN CRISTAL DE SILICIUM A 77°K
    R. POIRIER · 1968 · Le Journal de Physique Colloques
  24. Surface States at Clean and Cesiated Ge (111) Surfaces
    J. Von Wienskowski, Winfried Mönch · 1974 · Proceedings of the Twelfth International Conference on the Physics of Semiconductors
  25. Magnetically Controlled Surface Conduction in p-Type InSb at Liquid Helium Temperatures
    Jan A. Chroboczek, D. I. Aladashvili, Leonard Sosnowski · 1974 · Proceedings of the Twelfth International Conference on the Physics of Semiconductors
  26. The Influence of Landau Level Broadening on the Shubnikov-De Haas Effect in Two-Dimensional Conductors
    L. Bliek · 1974 · Proceedings of the Twelfth International Conference on the Physics of Semiconductors
  27. Negative and Positive Magnetoresistance Related to Surface States in SiliconInversion Layers
    G. Dorda, I. Eisele · 1974 · Proceedings of the Twelfth International Conference on the Physics of Semiconductors
  28. Electron transport in silicon inversion layers.
    David K. Ferry · 1976
  29. Quasi-two-dimensional electron systems in semiconductor space charge layers
    Phillip J. Stiles · 1980 · Surface Science
  30. Band Structure of AlAs-GaAs(100) Superlattices
    J. N. Schulman, T. C. McGill · 1978 · Physical Review Letters
  31. Conference summary
    D.C. Tsui · 1978 · Surface Science
  32. Optical properties of the quasi two-dimensional systems on tellurium surfaces
    Michael von Ortenberg · 1980 · Surface Science
  33. On the optical transitions in size quantized films
    M. Zału̇ny · 1981 · Surface Science
  34. Erratum: “Existence of Dipole-Density-Wave (DDW) State in Electron-Hole Junction Systems”
    Daijiro Yoshioka, Hidetoshi Fukuyama · 1979 · Journal of the Physical Society of Japan
  35. Erratum: Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors
    A.M. Voshchenkov, J. N. Zemel · 1975 · Physical review. B, Solid state