Electronic properties of two-dimensional systems

Cites (1,635)

Items 1,201–1,400 of 1,635

1. Electrical Conductivity in an n-Type Surface Inversion Layer of InSb at Low Temperature
   Kiichi F. Komatsubara, Hajime Kamioka, Yoshifumi Katayama · 1969 · Journal of Applied Physics
2. Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfaces
   Avid Kamgar · 1977 · Solid State Communications
3. Studies of electron screening effects on the electron mobility in silicon surface inversion layers
   C. C. Shiue, C. T. Sah · 1976 · Surface Science
4. Pair correlation function for a two-dimensional electron gas
   M. L. Glasser · 1977 · Journal of Physics C Solid State Physics
5. Cluster expansion for two-dimensional electron liquids
   Hiroo Totsuji · 1979 · Physical Review A
6. Comparison between the two theories of cyclotron resonance lineshape for a two-dimensional electron-impurity system
   M. Prasad, Shigeji Fujita · 1977 · Solid State Communications
7. Mesostructure electronics
   Peter J. Price · 1981 · IEEE Transactions on Electron Devices
8. Surface structure of liquid He4
   Frederick D. Mackie, Chia-Wei Woo · 1978 · Physical review. B, Condensed matter
9. Self Consistent Calculations of Electric Subbands in P-Type Silicon Inversion Layers
   E. Bangert, Klaus von Klitzing, G. Landwehr · 1974 · Proceedings of the Twelfth International Conference on the Physics of Semiconductors
10. Low temperature saturation of the channel conductivity in silicon inversion layers
    M.E. Sjöstrand, Teresa Cole, P. J. Stiles · 1976 · Surface Science
11. Subband energies in n -channel inversion layers on (111) Ge
    B. Vinter · 1979 · Physical review. B, Condensed matter
12. Carrier concentration in the inversion layer of a MOS field effect transistor
    J. Laur, T. S. Jayadevaiah · 1973 · Solid-State Electronics
13. Submillimeter cyclotron resonance studies of inversion layers at low electron density
    R. J. Wagner, Daniel C. Tsui · 1979 · Journal of Magnetism and Magnetic Materials
14. Polaron and bipolaron states in Si-inversion layers: Possible origins and effects
    Carter T White, Kia Ling Ngai · 1980 · Surface Science
15. Absence of crystalline order in two dimensions
    Sudip Chakravarty, Chandan Dasgupta · 1980 · Physical review. B, Condensed matter
16. Optical spectrum of inter-subband transition in n-Si (111) MOS charge layer
    M. Nakayama · 1978 · Surface Science
17. Electron-hole rearrangements in two-dimensional semimetals in high magnetic fields
    Igor V. Lerner, Yu. E. Lozovik · 1979 · Journal of Physics C Solid State Physics
18. Calculation of surface states in accumulation layer of tellurium
    Eugenia Kaczmarek, E. Bangert · 1977 · Solid State Communications
19. Non-parabolicity and transverse mass of electron carriers in silicon
    L. M. Falicov · 1976 · Solid State Communications
20. LOCALIZATION BY CORRELATION AND BY DISORDER
    D. J. Thouless · 1976 · Le Journal de Physique Colloques
21. On the effect of gate oxide thickness upon the hall mobility and other magneto-electrical characteristics in most structures
    J. Kassabov, N. B. Velchev, V. Gancheva · 1974 · Solid-State Electronics
22. Observation of valley splitting in (lll) n-type silicon inversion layers
    Th. Englert, Daniel C. Tsui, G. Landwehr · 1980 · Solid State Communications
23. Two dimensional plasmons on the surface of piezocrystal
    Alexander V. Chaplik, M. V. Krasheninnikov · 1978 · Solid State Communications
24. Many-body effects in the Si metal-oxide—semiconductor inversion layer: Subband structure
    Kouji Nakamura, H. Ezawa, K. Watanabe · 1980 · Physical review. B, Condensed matter
25. Photoconductivity measurements related to intersubband transitions in silicon MOSFET structures
    C. Hu, Jeff Pearse, Kit Man Cham · 1978 · Surface Science
26. Magnetoreflectance of surface space charge layers on PbTe
    Helmut Schaber, Ryan E. Doezema, J. Frederick Koch · 1978 · Solid State Communications
27. Microwave hot electron effects in semiconductor quantized inversion layers
    David K. Ferry, Pankaj Kumar Das · 1977 · Solid-State Electronics
28. The influence of ion bombardment and annealing on the conductivity of thepolar ZnO surface
    Y. Margoninski, David Eger · 1979 · Surface Science
29. On the effective mass and collision time of (100) Si surface electrons
    Frank F. Fang, Alan B. Fowler, A. Hartstein · 1978 · Surface Science
30. Quantum theory of the cyclotron resonance lineshape for a two-dimensional electron-phonon system
    Mahendra Prasad · 1979 · Physics Letters A
31. Effects of Higher Landau Levels and Valley Degeneracy on Charge Density Wave Instability of Two-Dimensional Electrons in Strong Magnetic Fields
    Daijiro Yoshioka, Hidetoshi Fukuyama · 1981 · Journal of the Physical Society of Japan
32. Band Structure Investigation on p-Type Silicon Inversion Layers by Piezoresistance and Mobility Measurements
    G. Dorda, H. Friedrich, Ekkehard Preuss · 1972 · Journal of Vacuum Science and Technology
33. Magneto-transport properties of silicon inversion layers at low carrier densities
    Th. Englert, G. Landwehr · 1976 · Surface Science
34. Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperatures
    R J Tidey, R. A. Stradling, M. Pepper · 1974 · Journal of Physics C Solid State Physics
35. Band theory of the quantum size effect
    Alan Cottey · 1972 · Journal of Physics C Solid State Physics
36. Current states and domains in systems with electron-hole pairing
    Yu. E. Lozovik, Alena Klyuchnik · 1980 · Journal of Low Temperature Physics
37. Variation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layers
    A. Hartstein, Frank F. Fang · 1978 · Physical review. B, Condensed matter
38. Electrons in a surface space charge layer on germanium — Shubnikov-de Haas oscillations and cyclotron resonance
    W. Weber, G. Abstreiter, J. Frederick Koch · 1976 · Solid State Communications
39. Spatial correlations of a two-dimensional electron gas
    A. Isihara, Tadashi Toyoda · 1976 · The European Physical Journal B
40. Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
    Zoran G. Djuric, Ž. Spasojević, D.A. Tjapkin · 1976 · Solid-State Electronics
41. Ground-state energy of strongly bound charged particles on surfaces
    Oscar Hipólito · 1979 · Journal of Physics C Solid State Physics
42. Deformation potentials of superlattices and interfaces
    Kiwon Mon, K. Hess, J. D. Dow · 1981 · Journal of Vacuum Science and Technology
43. Observation of Landau levels in InAs by electron tunneling
    Daniel C. Tsui · 1970 · Solid State Communications
44. Energies of external electron surface states on liquid helium
    T. M. Sanders, Gabriel Weinreich · 1976 · Physical review. B, Solid state
45. Quantum transport in an anisotropic two-dimensional system under strong magnetic fields
    Tsuneya Ando · 1976 · The European Physical Journal B
46. Effect of biaxial stress on Si(100) inversion layers
    Frank F. Fang · 1980 · Surface Science
47. On the modification of the einstein relation for semiconductor inversion layers
    D. R. Choudhury, Prasanta Kumar Basu, A. N. Chakravarti · 1976 · physica status solidi (a)
48. Energy loss of warm and hot carriers in surface inversion layers of polar semiconductors
    Erich Vass, K. Hess · 1976 · The European Physical Journal B
49. The phonon-mediated intervalley electron-electron interaction in silicon
    M J Kelly · 1978 · Solid State Communications
50. MOSFET thresholds at 4.2 K induced by cooling bias
    A.R. Tokuda, Peter O. Lauritzen · 1974 · IEEE Transactions on Electron Devices
51. Electron-phonon interaction at a silicon surface
    M J Kelly, W. Hanke · 1981 · Physical review. B, Condensed matter
52. Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors
    D. R. Choudhury, Ananya Chowdhury, A. N. Chakravarti · 1980 · Applied Physics A
53. Scattering of Carriers in Semiconductors by Screened Surface Charges
    Richard Greene, John Malamas · 1973 · Physical review. B, Solid state
54. On the distribution and properties of interface states at compound semiconductor-insulator interfaces
    Hideki Hasegawa, Takayuki SAWADA · 1980 · Surface Science
55. Effective-mass variation in silicon inversion layers
    A. W. Overhauser · 1978 · Physical review. B, Condensed matter
56. Coulomb scattering in the band tall of n-channel silicon MOSFETs
    Atsuo Yagi, M. Nakai · 1980 · Surface Science
57. Possibility of a spin-density-wave or a valley-density-wave in the ground state of a two-dimensional electron fluid
    David J. Bergman, T. M. Rice · 1977 · Solid State Communications
58. Influence of the free surface on the electrical behavior of metal contacts to p-InAs
    Michael F. Millea, Arnold H. Silver · 1978 · Journal of Vacuum Science and Technology
59. Space-charge layers on Ge surfaces. II. High-frequency conductivity and cyclotron resonance
    Jörg T. Binder, A. Huber, K. G. Germanova · 1979 · Physical review. B, Condensed matter
60. Hall effect measurements of hole mobility in an inversion layer of a mos structure at low temperatures
    C.A. Ribeiro, J. C. Pfister · 1972 · Solid State Communications
61. Orbital magnetic moment of two-dimensional Wigner crystal
    Hiroyuki Fukuyama, J. W. McClure · 1975 · Solid State Communications
62. Electromagnetic modes of an inversion layer
    A. G. Eguiluz, A. A. Maradudin · 1978 · Surface Science
63. Electronic properties of insulator-semiconductor interfaces
    F. Koch · 1979 · Surface Science
64. On the extent of the localized wavefunction
    Donald C. Licciardello, D. J. Thouless · 1976 · Journal of Physics C Solid State Physics
65. Electron-phonon coupling and resonant magneto-phonon effect in optical behaviour of two-dimensionally confined charge carriers
    Anupam Madhukar, S. Das Sarma · 1980 · Surface Science
66. CINEMATOGRAPHIC INVESTIGATION OF BUBBLONS IN SUPERFLUID HELIUM
    M. S. Khaǐkin · 1978 · Le Journal de Physique Colloques
67. Inversion layers in silicon on insulating substrates
    Th. Englert, G. Landwehr, J. de Pontcharra · 1980 · Surface Science
68. The low temperature strain sensitivity of MOS transistors
    B.G. Gaydon · 1973 · Solid-State Electronics
69. Theory of Nondegenerate Two‐Dimensional Electrons Interacting with Phonons in Quantizing Magnetic Fields
    M. I. Dykman · 1976 · physica status solidi (b)
70. Collective properties of a two-dimensional classical electron liquid
    Lennart Sjögren · 1980 · Journal of Physics C Solid State Physics
71. Properties of surface carriers at GaAs–native-oxide interfaces
    J. E. Stannard, T. A. Kennedy, B. D. McCombe · 1976 · Journal of Vacuum Science and Technology
72. An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devices
    Robin J. Nicholas, Klaus von Klitzing, R. A. Stradling · 1976 · Solid State Communications
73. Electron-phonon interactions in n-type silicon inversion layers at low temperatures
    Kit Man Cham, Robert G. Wheeler · 1980 · Surface Science
74. Defect states and phase transition in the two-dimensional Wigner crystal
    Arno Holz · 1980 · Physical review. B, Condensed matter
75. Those other space-charge layers
    F. Koch · 1980 · Surface Science
76. One-dimensional hydrogenic atom in an electric field with solid-state applications
    Robert F. O’Connell · 1977 · Physics Letters A
77. On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si
    M. Prasad, T.K. Srinivas, Shigeji Fujita · 1977 · Solid State Communications
78. Electron correlations in a two-dimensional electron gas
    Shyamalendu M. Bose · 1976 · Physical review. B, Solid state
79. Interaction-induced transition at low densities in silicon inversion layer
    Walter L. Bloss, Lu Jeu Sham, B. Vinter · 1980 · Surface Science
80. Determination of intervalley electron-phonon deformation potential constants in n -silicon by analysis of high electric field transport properties
    James G. Nash, James W. Holm‐Kennedy · 1974 · Applied Physics Letters
81. Sound modes of a two-dimensional electron gas bound to a helium film
    Whittak Huang, Joseph Rudnick, Arnold J. Dahm · 1977 · Journal of Low Temperature Physics
82. Electric Field dependence of non-metallic conduction in a two-dimensional random system
    T. Tsuzuki · 1981 · Solid State Communications
83. Effect of electron correlation on the high-frequency conductivity of electron liquids on a liquid helium surface
    Hiroo Totsuji · 1980 · Physical review. B, Condensed matter
84. Measurements of interface state density in MNOS structures
    Emil Arnold, H. Schauer · 1978 · Applied Physics Letters
85. Noise of hot carriers in the channel of n silicon junction gate field effect transistors
    Jean Pierre Nougier, D. Sodini, M. Rolland · 1978 · Solid-State Electronics
86. Application of effective-medium theory to inversion layers
    C. J. Adkins · 1979 · Journal of Physics C Solid State Physics
87. Magnetoconductance oscillations and inversion layer subbands in silicon on sapphire
    Katsunori Hatanaka, Shinji Onga, Yusuke Yasuda · 1978 · Surface Science
88. Shubnikov-de Haas oscillations in n-channel silicon 〈100〉 MOSFETS in magnetic fields up to 35 T
    Robin J. Nicholas, R. A. Stradling, J. C. Portal · 1979 · Solid State Communications
89. Impurity pinning in one, two, and three dimensions in incommensurate modulated lattices
    J. F. Weisz, Jeffrey B. Sokoloff, J. E. Sacco · 1979 · Physical review. B, Condensed matter
90. Scattering of holes of a two-dimensional gas near Germanium surfaces cleaved in liquid Nitrogen
    V. N. Dobrovolskii, Yu. S. Zharkikh · 1971 · physica status solidi (a)
91. Evidence for a mobility edge in inversion layers. II
    Frank Stern · 1974 · Journal of Vacuum Science and Technology
92. Impurity scattering in inversion layers in density functional formalisms
    B. Vinter · 1980 · Surface Science
93. Harmonic lattice model for the internal energy of the classical two-dimensional one-component plasma fluid
    Naoki Itoh, Setsuo Ichimaru · 1980 · Physical review. B, Condensed matter
94. VI. Is the Hall effect in silicon inversion layers consistent with macroscopic inhomogeneities?
    JamesC. Thompson · 1978 · Philosophical Magazine B
95. Coupled electron-phonon system in two dimensions and its implications for inversion layers
    Anupam Madhukar · 1977 · Solid State Communications
96. A simplified treatment of exchange and correlation in semiconducting surface inversion layers
    R. K. Kalia, G.H. Kawamoto, J. J. Quinn · 1980 · Solid State Communications
97. Optical measurements of the minigaps in electron inversion layers on vicinal planes of Si(001)
    Avid Kamgar, Michael D. Sturge, Daniel C. Tsui · 1980 · Physical review. B, Condensed matter
98. Pressure dependence of structure in the mobility of (100) silicon inversion layers
    H. Gesch, I. Eisele, G. Dorda · 1978 · Surface Science
99. Conductance oscillations and source-drain-limited conduction in Si MOSFETs
    M. Pepper, Michael J. Uren, R.E. Oakley · 1979 · Journal of Physics C Solid State Physics
100. High-frequency conductivity of a two-dimensional, two-component electron gas
     Narkis Tzoar, P. M. Platzman · 1979 · Physical review. B, Condensed matter
101. Quantum size effect in SnTe observed by tunnel experiments
     M. Altwein, H. Finkenrath · 1975 · physica status solidi (b)
102. Energy relaxation to acoustic phonons in quasi-two-dimensional semiconductors
     David K. Ferry · 1977 · Solid State Communications
103. Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire
     Y. Ohmura · 1979 · Journal of the Physical Society of Japan
104. Chain like localization in the two dimensional disordered system
     S. Yoshino, Makoto Okazaki · 1978 · Solid State Communications
105. Electronic transport near the surface of indium antimonide films
     A. Zemel, James R. Sites · 1977 · Thin Solid Films
106. Frequency dependence of cyclotron resonance in si inversion layers in the region of activated conductivity
     R. J. Wagner, T. A. Kennedy, Bruce D. McCombe · 1976 · Surface Science
107. Null Faraday rotation—a clean method for determination of relaxation times and effective masses in MIS and other systems
     Robert F. O’Connell, G. Wallace · 1981 · Solid State Communications
108. Hall effect measurements of hole mobility in an inversion layer at the SiSiO2 interface
     A. Toscano-Rico, J. C. Pfister · 1971 · physica status solidi (a)
109. Quantum size effect in the electrical conductivity of Bi8Te7S5
     Terrence D. Clark · 1974 · Journal of Physics and Chemistry of Solids
110. Electronic Band Structure of Superlattices in Magnetic Fields
     Kenji Nakao · 1979 · Journal of the Physical Society of Japan
111. Cyclotron resonance of two-dimensional electrons forming wigner crystal
     M. I. Dykman · 1980 · Solid State Communications
112. Lateral Photovoltaic Effect in MOS Structures
     Hirohiko Niu, Munezo Takai · 1978 · Japanese Journal of Applied Physics
113. Two-dimensional Wigner crystal in magnetic fields
     Hiroyuki Fukuyama · 1976 · Surface Science
114. Surface states in the conduction band region of Si
     I. Eisele, G. Dorda · 1974 · Solid State Communications
115. Variation with Fermi level of the hole cyclotron masses in silicon and germanium
     N. Garcia, L. M. Falicov · 1975 · Solid State Communications
116. Hartree-Fock solution of CDW of two-dimensional electron gas in magnetic field
     Arisato Kawabata · 1978 · Solid State Communications
117. Anderson localization in silicon inversion layers
     M. Pepper, S. Pollitt, C. J. Adkins · 1975 · C R C Critical Reviews in Solid State Sciences
118. Erratum: Plasma oscillation of a charge layer at an insulator surface
     Donald E. Beck, Pradeep Kumar · 1976 · Physical review. B, Solid state
119. Many body effects in the absorption spectrum of electrons in two-dimensional systems
     P. M. Platzman, Narkis Tzoar · 1976 · Surface Science
120. Temperature dependence of the cyclotron resonance in electron inversion layers on Si
     J. P. Kotthaus, H. Küblbeck · 1976 · Surface Science
121. Warm electrons in degenerate quasi-two-dimensional semiconductors
     David K. Ferry · 1978 · Surface Science
122. Chemically sensitive devices
     JAY N. ZEMEL · 1979 · Surface Science
123. Critical tests of the theory of magnetoconductance in two dimensions
     Amir A. Lakhani, P. J. Stiles · 1976 · Physical review. B, Solid state
124. Normalization of wave functions in an MIS structure
     G. Noti · 1972 · Solid-State Electronics
125. Quantum-Limit Piezoresistance of n-Type Inversion Layers of Silicon and Germanium
     Ryoichi Ito · 1972 · Journal of Applied Physics
126. The radiation hardness of the Si-SiO2interface and carrier localisation in the inversion layer
     M. Pepper · 1977 · Journal of Physics C Solid State Physics
127. Coulomb interaction effects on cyclotron resonance in 2D systems
     H. Fukuyama, Yoshio Kuramoto, P. M. Platzman · 1978 · Surface Science
128. Interference Effects of \(\varGamma\) and X Electric-Break-Throughs in Inversion Layers of Si
     Fusayoshi J. Ohkawa · 1979 · Journal of the Physical Society of Japan
129. Spatially separated electron-hole system in high magnetic fields
     Igor V. Lerner, Yu. E. Lozovik, D. R. Musin · 1981 · Journal of Physics C Solid State Physics
130. Photoconductivity of silicon inversion layers
     Yasuhiro Shiraki · 1977 · Journal of Physics C Solid State Physics
131. Stress and temperature dependence of the electronic properties of n-type silicon inversion layers
     Michael Joseph Kelly, L. M. Falicov · 1977 · Journal of Physics C Solid State Physics
132. The influence of dielectric charge on the hole field-effect mobility in silicon inversion layers
     R.E. Oakley, M. Pepper · 1972 · Physics Letters A
133. Mechanisms of electron-phonon scattering and resistivity in graphite intercalation compounds
     L. Pietronero, S. Strässler · 1981 · Physical review. B, Condensed matter
134. Inversion layer carrier mobility in metal–oxide–semiconductor devices
     C. T. Hsing, D. Kennedy, K. M. van Vliet · 1980 · physica status solidi (a)
135. Conduction in quantized silicon inversion layers with many occupied electric subbands
     A. R. Nelson, E. Brown · 1974 · Physical review. B, Solid state
136. Surface depletion and inversion in semiconductors with arbitrary dopant profiles
     Dirk J. Bartelink · 1980 · Applied Physics Letters
137. Theory of Cyclotron Resonance of Hot Electrons on the Liquid 4He
     Takayuki Aoki, Motohiko Saitoh · 1980 · Journal of the Physical Society of Japan
138. Longitudinal properties of two-dimensional classical electron liquids
     Hiroo Totsuji, Hideyuki Kakeya · 1979 · Physics Letters A
139. The transient response of quasi-two-dimensional semiconductors under hot electron conditions
     Pankaj Kumar Das, David K. Ferry, A. Barr · 1978 · Surface Science
140. Accumulation- and inversion-layer Hall mobilities in silicon films on sapphire
     A.C. Ipri · 1973 · Applied Physics Letters
141. Temperature and band-gap-light dependence of far IR resonant magnetotransmission in Si inversion layers
     T. A. Kennedy, Bruce D. McCombe, Daniel C. Tsui · 1978 · Surface Science
142. Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems
     S. Das Sarma, Anupam Madhukar · 1981 · Journal of Vacuum Science and Technology
143. Plasma Oscillations in a Superlattice
     G. М. Shmelev, I. A. Ciiaikovskii, V. V. Pavlovich · 1977 · physica status solidi (b)
144. Rydberg states in strong electric and magnetic fields
     Robert F. O’Connell · 1978 · Physical Review A
145. Far-infra-red cyclotron resonance in the inversion layer onp-Hg1−x Cd x Te
     Shin‐ichiro Narita, T. Kuroda · 1977 · ˜Il œNuovo cimento della Società italiana di fisica. B/˜Il œNuovo cimento B
146. Comment on Plasmon Linewidth Experiments for Electrons on a Helium Surface
     P. M. Platzman, G. Beni · 1976 · Physical Review Letters
147. Theory of cyclotron resonance for electrons in a Si surface inversion layer under a uniaxial stress
     C. S. Ting, A. K. Ganguly, W. Y. Lai · 1981 · Physical review. B, Condensed matter
148. Optical properties of quasi-two-dimensional systems: Nonlocal effects
     Wolf Luis Mochán, Rubén G. Barrera · 1981 · Physical review. B, Condensed matter
149. Many-body effects on the transverse conductivity of two-dimensional electron systems in strong magnetic fields
     Arisato Kawabata · 1980 · Surface Science
150. Itinerant electron ferromagnetism of a two dimensional system
     A. K. Rajagopal · 1977 · Solid State Communications
151. Wigner transition temperature of a two-dimensional electron gas in a strong magnetic field
     Rolf R. Gerhardts · 1981 · Physical review. B, Condensed matter
152. Thermally activated conductance of a silicon inversion layer by electrons excited above the mobility edge
     H. H. J. M. Niederer, A P M Mattey, M Sparnaay · 1981 · Journal of Physics C Solid State Physics
153. Comments on "A new approach to the theory and modeling of IGFET's
     J.R. Brews · 1977 · IEEE Transactions on Electron Devices
154. Optical Conductivity of Two-Dimensional Disordered Systems
     Kozo Hoshino · 1976 · Journal of the Physical Society of Japan
155. Stability of the six-valley state of the Si(111) n -type inversion layer
     G. Beni, T. M. Rice · 1979 · Physical review. B, Condensed matter
156. Frequency response of charge transfer in MOS inversion layers
     Udo Lieneweg · 1980 · Solid-State Electronics
157. Linewidths of Resonances in a Two-Dimensional Wigner Lattice on a Liquid-Helium Surface
     R. Mehrotra, Arnold J. Dahm · 1979 · Physical Review Letters
158. Spectroscopy of electron subband levels in an inversion layer on InSb
     W. Beinvogl, J. Frederick Koch · 1978 · Surface Science
159. Peaked structure appearing in the field effect mobility of silicon mos devices at temperatures above 20 K
     R. A. Stradling, R J Tidey · 1975 · C R C Critical Reviews in Solid State Sciences
160. Far infrared Faraday rotation in a two-dimensional electron gas
     Herbert Piller · 1979 · Journal of Vacuum Science and Technology
161. Some aspects of localization in two-dimensional systems
     M. Pepper · 1978 · Surface Science
162. Far-infrared investigation of high index surfaces on silicon
     Hiroshi Okamoto, K. Muro, Shin‐ichiro Narita · 1980 · Surface Science
163. Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si(100)
     G. Abstreiter, Peter Stallhofer, J. P. Kotthaus · 1980 · Surface Science
164. High frequency conductivity of two-dimensional electrons in a superlattice
     Teresa Cole, J. P. Kotthaus, T.N. Theis · 1978 · Surface Science
165. On Gunn Instability in Two-Dimensional Semiconductors
     達美 黒沢, Seiji Nagahashi · 1978 · Journal of the Physical Society of Japan
166. Minimum metallic conductivity in a thin crystal
     Henn H. Soonpaa · 1978 · Solid State Communications
167. On the g factor for electrons in n-type silicon surface inversion layers
     Koziro Narita, Sumiko Takaoka, Kiichi F. Komatsubara · 1973 · Solid State Communications
168. Universality and transport in two-dimensional disordered systems
     Donald C. Licciardello, D. J. Thouless · 1976 · Surface Science
169. Dislocation formalism in crystals with long-range interactions
     Arno Holz · 1980 · Physical review. B, Condensed matter
170. Frequency dependent effective masses in Si inversion layers at metallic densities
     T. A. Kennedy, R. J. Wagner, Bruce D. McCombe · 1976 · Surface Science
171. Characteristics of quasi-two-dimensional excitons and plasmons at various concentrations
     В. Г. Литовченко · 1978 · Surface Science
172. A plasma resonance study of valley transfer in (001) Si inversion layers
     Th. Englert, Daniel C. Tsui, Ralph A. Logan · 1981 · Solid State Communications
173. Inversion layer plasma waves in quantizing magnetic field
     M. Orman, Norman J. M. Horing · 1974 · Solid State Communications
174. Influence of uniaxial stress on quantum effects in Si inversion layers
     Daniel C. Tsui, G. Kaminsky · 1976 · Surface Science
175. Problems of the electron theory of metals IV. thermodynamic and kinetic properties of metals in a Magnetic field
     M. Ya. Azbel’ · 1969 · Uspekhi Fizicheskih Nauk
176. Theory of valley-splitting without effective-mass approximation
     Florian Schulte · 1979 · Solid State Communications
177. Test of McWhorter's model of low-frequency noise in Si m.o.s.t.s
     Feodora Berz, C.G. Prior · 1970 · Electronics Letters
178. Valley splitting in n-type inverted silicon mosfet surfaces
     H. Köhler · 1980 · Surface Science
179. Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon
     Amir A. Lakhani, T.K. Lee, J. J. Quinn · 1976 · Surface Science
180. Effect of the Auger-type transition on the intersubband optical absorption in Si surface inversion layers
     C. S. Ting, A. K. Ganguly · 1979 · Physical review. B, Condensed matter
181. IONS AT THE CRITICAL INTERFACE OF 3He-4He MIXTURES
     P. Leǐderer, M. Wanner, W. Schoepe · 1978 · Le Journal de Physique Colloques
182. On the size-dependence of the electrical conductivity for strongly disordered two-dimensional systems
     J. Stein, Uwe Krey · 1980 · Solid State Communications
183. Effect of the interface on electronic structure of n-Si MOS charge layer
     Masatoshi Nakayama · 1980 · Surface Science
184. A New Type of Anomalous Magnetoresistance in Two Dimensional Transport in InAs
     Shinji Kawaji, Yoichi Kawaguchi · 1968 · Journal of the Physical Society of Japan
185. On the modification of the Einstein relation for inversion layers on narrow gap semiconductors in a strong electric field
     A. N. Chakravarti, Ananya Chowdhury, Kamakhya Prasad Ghatak · 1980 · physica status solidi (a)
186. Magnetoresistance of n-silicon inversion layers in the ohmic and in the hot-electron range
     K. Hess · 1976 · Surface Science
187. Effect of a parallel magnetic field on interband transitions in two-dimensional systems
     P. M. Platzman, Bertrand I. Halperin · 1978 · Physical review. B, Condensed matter
188. Thin crystal as a 2d system
     Henn H. Soonpaa · 1978 · Surface Science
189. Effects of nitrogen annealing on electron scatterings in SiSiO2 interface
     Atsuo Yagi, Shinji Kawaji · 1979 · Solid-State Electronics
190. Influence of intervalley transitions on the photoconductivity in n-type Si 〈100〉 inversion layers
     Gottfried H. Döhler · 1976 · Solid State Communications
191. Effects of adsorption on the electrical conductivity of thin crystals of bismuth tellurium sulfide
     Robert Daniel Redin, H.A. Undem, Henn H. Soonpaa · 1977 · Surface Science
192. Two-dimensional electron gas in a magnetic field: Polarizability
     M. L. Glasser · 1980 · Physical review. B, Condensed matter
193. Calculation of surface quantum levels in tellurium inversion layers
     J. Bouat, J. C. Thuillier · 1978 · Journal de physique
194. I–V and magnetoconductivity measurements on a quasi-two-dimensional crystal
     H.A. Undem, Kenneth E. Severson, Henn H. Soonpaa · 1977 · Solid State Communications
195. Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures
     Gordon C. Osbourn · 1981 · Journal of Vacuum Science and Technology
196. Theory of the Electron Mobility in Inversion Layers on Oxidized Silicon Surface at Room Temperature
     Ching‐Yuan Wu, G. Thomas · 1972 · Physical review. B, Solid state
197. Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures
     Yoshifumi Katayama, Koziro Narita, Yasuhiro Shiraki · 1977 · Journal of the Physical Society of Japan
198. Collective excitations and electrodynamic behavior of electrons in a three-layer structure
     Günther Meißner · 1978 · Surface Science
199. Electron dynamics in P -Si m.o.s.f.e.t. inversion channels
     Jacques Zimmermann, R. Fauquembergue, M. Charef · 1980 · Electronics Letters
200. Matthiessen's rule and its variation for cyclotron resonance width in two and three dimensions
     M. Prasad, Shigeji Fujita · 1977 · Physics Letters A