Cited by 7,455Quantum and electron transport phenomenaSemiconductor materials and devicesSurface and Thin Film Phenomena

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Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

DOI 10.1103/revmodphys.54.437

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Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Surface superconductivity and the MOS system
Kelly, M. J., & Hanke, W. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.112 · Cited by 40
Problems and prospects of compound semiconductor field-effect transistors
Wieder, H. (1980) · Journal of Vacuum Science and Technology · doi:10.1116/1.570582 · Cited by 40
Levitated electrons
Edel'man, V. S. (1980) · Uspekhi Fizicheskih Nauk · doi:10.3367/ufnr.0130.198004d.0675 · Cited by 40
Effect of coexistence of random potential and electron-electron interaction in two-dimensional systems: Wigner glass
Aoki, H. (1979) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/12/4/010 · Cited by 39
Quantum properties of strong accumulation layers on ZnO surfaces
Eger, D., Many, A., & Goldstein, Y. (1976) · Surface Science · doi:10.1016/0039-6028(76)90107-2 · Cited by 39
Landau-level spectra of conduction electrons at an InAs surface
Tsui, D. C. (1975) · Physical review. B, Solid state · doi:10.1103/physrevb.12.5739 · Cited by 39
Piezoelectric scattering in quantised surface layers in semiconductors
Basu, P. K., & Nag, B. R. (1981) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/14/10/019 · Cited by 39
The conductivity of strongly disordered two-dimensional systems
Gold, A., & Götze, W. (1981) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/14/28/008 · Cited by 39
Localization and the quantized Hall resistance in the two-dimensional electron gas
Tsui, D. C., & Allen, S. J. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.24.4082 · Cited by 39
Correlation energy of 2-D electrons
Isihara, A., & Toyoda, T. (1977) · Annals of Physics · doi:10.1016/0003-4916(77)90316-5 · Cited by 39
The origin and nature of silicon band-gap states at the Si/SiO2 interface
Singh, J., & Madhukar, A. (1981) · Applied Physics Letters · doi:10.1063/1.92208 · Cited by 39
Electron—hole superconductivity. Influence of structure defects
Lozovik, Y. E., & Yudson, V. I. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90687-1 · Cited by 39
Landau Interaction Function for Electrons in the Surface Inversion Layer of a Semiconductor: A Test of Many-Body Theory
Lee, T. K., Ting, C. S., & Quinn, J. J. (1975) · Physical Review Letters · doi:10.1103/physrevlett.35.1048 · Cited by 39
Instability and Melting of the Electron Solid
Horn, H. M. V. (1967) · Physical Review · doi:10.1103/physrev.157.342 · Cited by 39
Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application
Delescluse, P., Laviron, M., Chaplart, J., et al. (1981) · Electronics Letters · doi:10.1049/el:19810242 · Cited by 38
Continuously Voltage-Tunable Line Absorption in Surface Quantization
Wheeler, R. G., & Ralston, R. W. (1971) · Physical Review Letters · doi:10.1103/physrevlett.27.925 · Cited by 38
Properties of surface state electrons on liquid helium
Crandall, R. S. (1976) · Surface Science · doi:10.1016/0039-6028(76)90150-3 · Cited by 38
Quantum Effects on Melting Temperature of Two-Dimensional Wigner Solid in Strong Magnetic Fields
Fukuyama, H., & Yoshioka, D. (1980) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.48.1853 · Cited by 38
Drift-Velocity Saturation of Holes in Si Inversion Layers
Satô, T., Takeishi, Y., Tango, H., et al. (1971) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.31.1846 · Cited by 38
Far-infrared and capacitance measurements of electrons on liquid helium
Lambert, D. K., & Richards, P. L. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.3282 · Cited by 38
Physical limitations of MOS structures
Das, M. B. (1969) · Solid-State Electronics · doi:10.1016/0038-1101(69)90087-2 · Cited by 38
Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs
Judaprawira, S., Wang, W. I., Chao, P. C., et al. (1981) · IEEE Electron Device Letters · doi:10.1109/edl.1981.25322 · Cited by 38
Theory of Plasmon Excitation in Thin Films by Electrons of Non‐Normal Incidence
Otto, A. (1967) · physica status solidi (b) · doi:10.1002/pssb.19670220211 · Cited by 38
Ge-GaAs superlattices by molecular beam epitaxy
Chang, C., Segmüller, A., Chang, L. L., et al. (1981) · Applied Physics Letters · doi:10.1063/1.92179 · Cited by 38
Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of Si
Lakhani, A. A., & Stiles, P. J. (1975) · Physics Letters A · doi:10.1016/0375-9601(75)90250-9 · Cited by 38
Hall mobility of a cleaned germanium surface
Missman, R. A., & Handler, P. (1959) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(59)90287-2 · Cited by 38
Two-dimensional electron-lattice scattering in thermally oxidized silicon surface-inversion layers
Wu, C.-Y., & Thomas, G. (1974) · Physical review. B, Solid state · doi:10.1103/physrevb.9.1724 · Cited by 38
Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlattice
Mori, S., & Ando, T. (1980) · Surface Science · doi:10.1016/0039-6028(80)90479-3 · Cited by 37
Self-citation
Quantum mechanical determination of the potential and carrier distributions in the inversion layer of metal—oxide—semiconductor devices
Hsing, C. T., Kennedy, D. P., Sutherland, A. D., et al. (1979) · physica status solidi (a) · doi:10.1002/pssa.2210560113 · Cited by 37
An investigation of the valley splitting in n-channel silicon 〈100〉 inversion layers
Nicholas, R. J., von Klitzing, K., & Englert, T. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90628-6 · Cited by 37
Properties of the silicon–SiO2 interface
Williams, R. (1977) · Journal of Vacuum Science and Technology · doi:10.1116/1.569342 · Cited by 37
Electron escape from the image-potential-induced surface states on liquid helium
Iye, Y., Kōno, K., Kajita, K., et al. (1980) · Journal of Low Temperature Physics · doi:10.1007/bf00114327 · Cited by 37
Macroscopic Electron Lattice on the Surface of Liquid Helium
Ikezi, H. (1979) · Physical Review Letters · doi:10.1103/physrevlett.42.1688 · Cited by 37
Surface mobility measurement using acoustic surface waves
Bers, A., Cafarella, J. H., & Burke, B. E. (1973) · Applied Physics Letters · doi:10.1063/1.1654689 · Cited by 36
Experimental Study of Oscillatory Values of g* of a Two-Dimensional Electron Gas
Lakhani, A. A., & Stiles, P. J. (1973) · Physical Review Letters · doi:10.1103/physrevlett.31.25 · Cited by 36
Subharmonic structure of cyclotron resonance an inversion layer on Si
Kotthaus, J. P., Abstreiter, G., & Koch, J. F. (1974) · Solid State Communications · doi:10.1016/0038-1098(74)91132-6 · Cited by 36
Charge-density waves in two- and three-dimensional jellium
Sander, L. M., Rose, J. H., & Shore, H. B. (1980) · Physical review. B, Condensed matter · doi:10.1103/physrevb.21.2739 · Cited by 36
ELS studies of quantized accumulation layers on ZnO surfaces
Goldstein, Y., Many, A., Wagner, I., et al. (1980) · Surface Science · doi:10.1016/0039-6028(80)90540-3 · Cited by 36
The Anderson transition in silicon inversion layers
Pollitt, S., Pepper, M., & Adkins, C. J. (1976) · Surface Science · doi:10.1016/0039-6028(76)90116-3 · Cited by 36
Fluctuations, Coulomb effects, and long-range order in incommensurate charge-density-wave structures
Bergman, D. J., Rice, T. M., & Lee, P. A. (1977) · Physical review. B, Solid state · doi:10.1103/physrevb.15.1706 · Cited by 36
Experimental Study of Electron Localization in a Two-Dimensional Metal
Komori, F., Kobayashi, S.-I., Ootuka, Y., et al. (1981) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.50.1051 · Cited by 36
The dielectric constant in liquid and solid4He
Chan, M. H. W., Ryschkewitsch, M. G., & Meyer, H. (1977) · Journal of Low Temperature Physics · doi:10.1007/bf00654569 · Cited by 36
Quantum Theory of Transport in Narrow Channels
Duke, C. B. (1968) · Physical Review · doi:10.1103/physrev.168.816 · Cited by 36
Galvanomagnetic Effects in Silicon Surface Inversion Layers
Sakaki, H., & Sugano, T. (1971) · Japanese Journal of Applied Physics · doi:10.1143/jjap.10.1016 · Cited by 36
Morphology of SiSiO2 interface
Sugano, T., Jen, J. C., & Hamano, T. (1980) · Surface Science · doi:10.1016/0039-6028(80)90487-2 · Cited by 36
Negative magnetoresistance in a two-dimensional impurity band in cesiated p-Si(111) surface inversion layers
Kawaguchi, Y., Kitahara, H., & Kawaji, S. (1978) · Surface Science · doi:10.1016/0039-6028(78)90535-6 · Cited by 36
Measurements and interpretation of low-frequency noise in FET's
Das, M. B., & Moore, J. M. (1974) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1974.17906 · Cited by 36
Magnetic surface levels
Khaǐkin, M. S. (1968) · Uspekhi Fizicheskih Nauk · doi:10.3367/ufnr.0096.196811b.0409 · Cited by 36
Ground-state energy and effective mass of a polaron in a two-dimensional surface layer
Huybrechts, W. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)90335-6 · Cited by 35
Plasma frequency of the electron gas in layered structures
Apostol, M. (1975) · The European Physical Journal B · doi:10.1007/bf01325455 · Cited by 35
Resolution of Shubnikov-de Haas Paradoxes in Si Inversion Layers
Vinter, B., & Overhauser, A. W. (1980) · Physical Review Letters · doi:10.1103/physrevlett.44.47 · Cited by 35
Transport properties of light and heavy holes in the space charge region of a clean and water covered (111) germanium surface
Handler, P., & Eisenhour, S. L. (1964) · Surface Science · doi:10.1016/0039-6028(64)90044-5 · Cited by 35
Melting transition of two-dimensional crystals
Holz, A., & Medeiros, J. T. N. (1978) · Physical review. B, Condensed matter · doi:10.1103/physrevb.17.1161 · Cited by 35
The channel conductivity in n-type Si inversion layers at very low electron densities
Sjöstrand, M. E., & Stiles, P. J. (1975) · Solid State Communications · doi:10.1016/0038-1098(75)90890-x · Cited by 35
Metal-insulator transitions induced by a magnetic field
Pepper, M. (1979) · Journal of Non-Crystalline Solids · doi:10.1016/0022-3093(79)90071-1 · Cited by 35
Crystallization of electrons on the surface of liquid helium
Grimes, C. C., & Adams, G. W. (1980) · Surface Science · doi:10.1016/0039-6028(80)90465-3 · Cited by 35
Charge density waves in layered compounds
Salvo, F. J. D. (1976) · Surface Science · doi:10.1016/0039-6028(76)90155-2 · Cited by 35
A metal-insulator transition in the impurity band of n-type GaAs induced by loss of dimension
Pepper, M. (1977) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/10/8/003 · Cited by 35
Magnetic field effects on slab surface plasmons in the local limit
Horing, N. J. M., & Yildiz, M. (1973) · Physics Letters A · doi:10.1016/0375-9601(73)90834-7 · Cited by 35
Vibration modes of a two-dimensional Wigner lattice coupled to ripplons on a liquid-helium surface
Eguiluz, A. G., Maradudin, A. A., & Elliott, R. J. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.24.197 · Cited by 34
Magnetotransport in an inversion layer on p-InSb
Därr, A., & Kotthaus, J. P. (1978) · Surface Science · doi:10.1016/0039-6028(78)90540-x · Cited by 34
Inversion layer mobility with intersubband scattering
Ezawa, H. (1976) · Surface Science · doi:10.1016/0039-6028(76)90108-4 · Cited by 34
Negative Magnetoresistance in n -Channel (100) Silicon Inversion Layers
Eisele, I., & Dorda, G. (1974) · Physical Review Letters · doi:10.1103/physrevlett.32.1360 · Cited by 34
New Model for Interface Charge-Carrier Mobility: The Role of Misfit Dislocations
Neumark, G. F. (1968) · Physical Review Letters · doi:10.1103/physrevlett.21.1252 · Cited by 34
Calculation of hopping transport coefficients
Butcher, P. N. (1980) · Philosophical Magazine B · doi:10.1080/01418638008222328 · Cited by 34
Parametric Approach to Surface Screening of a Weak External Electric Field
Appelbaum, J. A., & Baraff, G. A. (1971) · Physical review. B, Solid state · doi:10.1103/physrevb.4.1246 · Cited by 34
Impurity bands in inversion layers
Hartstein, A., & Fowler, A. B. (1978) · Surface Science · doi:10.1016/0039-6028(78)90467-3 · Cited by 34
Self-citation
Conduction in non-crystalline systems. X. Mobility and percolation edges
Mott, N. F. (1974) · Philosophical magazine · doi:10.1080/14786437408213243 · Cited by 34
Crystallography and crystal chemistry of materials with layered structures
Ad (1977) · Journal of Molecular Structure · doi:10.1016/0022-2860(77)87120-2 · Cited by 34
Observation of liquid-to-crystal transition in a two dimensional electronic system
Marty, D., Poitrenaud, J., & Williams, F. I. B. (1980) · Journal de Physique Lettres · doi:10.1051/jphyslet:019800041013031100 · Cited by 33
Charged interface of He3 - He4 mixtures. Softening of interfacial waves
Leiderer, P. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.20.4511 · Cited by 33
Exact Matrix Elements of a Crystal Hamiltonian between Harmonic-Oscillator Wave Functions
Koehler, T. R. (1966) · Physical Review · doi:10.1103/physrev.144.789 · Cited by 33
Optical properties of charge-density-wave ground states for inversion layers in many-valley semiconductors
Kelly, M. J., & Falicov, L. M. (1977) · Physical review. B, Solid state · doi:10.1103/physrevb.15.1983 · Cited by 33
Microscopic approach to the quantum size effect in superlattices
Ivanov, I., & Pollmann, J. (1979) · Solid State Communications · doi:10.1016/0038-1098(79)90489-7 · Cited by 33
Nonlinear screening in layered semimetals
Pietronero, L., Strässler, S., & Zeller, H. R. (1979) · Solid State Communications · doi:10.1016/0038-1098(79)90660-4 · Cited by 33
Conductor-insulator transition in the Anderson model of a disordered solid
Prelovšek, P. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.1304 · Cited by 33
Quantization effects in ZnO accumulation layers in contact with an electrolyte
Eger, D., & Goldstein, Y. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.19.1089 · Cited by 33
Phase transitions in two-dimensional electron-hole systems in high magnetic fields
Lerner, I. V., & Lozovik, Y. E. (1980) · Journal of Low Temperature Physics · doi:10.1007/bf00114330 · Cited by 33

Flagged first, then by citations

Research works printed but not linked: 413

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Chang, L. L., 1975, Epitaxial Growth, Part A
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Holz, A., Ordering in Two Dimensions
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Authors: Ando, T., Fowler, A. B., & Stern, F.
Affiliations: University of Tsukuba (JP)
Venue: Reviews of Modern Physics
Publisher: American Physical Society (APS)
Published: 1982-04-01
Volume: 54
Issue: 2
Pages: 437-672
ISSN: 0034-6861 (ISSN-L)
DOI: 10.1103/revmodphys.54.437
OpenAlex: W2043365391
Cited by: 7,455
References: 1,635
Citations by year: 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
FWCI: 108.29
Type: journal article
Language: en
Open access: closed
Licence: link.aps.org/licenses/aps-default-license (vor)
Locations: Reviews of Modern Physics (publishedVersion)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
Keywords: two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties

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