Cited by 7,455Quantum and electron transport phenomenaSemiconductor materials and devicesSurface and Thin Film Phenomena

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Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

DOI 10.1103/revmodphys.54.437

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Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Roberts, G. G., Pande, K. P., & Barlow, W. (1978) · IEE Journal on SolidState and Electron Devices · doi:10.1049/ij-ssed.1978.0053 · Cited by 64
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Jackman, T. E., MacDonald, J. R., Feldman, L. C., et al. (1980) · Surface Science · doi:10.1016/0039-6028(80)90442-2 · Cited by 64
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Abrahams, E., Anderson, P. W., & Ramakrishnan, T. V. (1980) · Philosophical Magazine B · doi:10.1080/01418638008222330 · Cited by 63
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Aoki, H., & Kamimura, H. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)91475-2 · Cited by 63
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Effect of a thin transition layer at a Si-SiO2 interface on electron mobility and energy levels
Stern, F. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90674-3 · Cited by 63
Self-citation
Barrier Inhomogeneities on a Si–SiO2 Interface by Scanning Internal Photoemission
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Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces
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Comment on Plasmon Linewidth Experiments for Electrons on a Helium Surface
Platzman, P. M., & Beni, G. (1976) · Physical Review Letters · doi:10.1103/physrevlett.36.626 · Cited by 62
Far infrared resonant magnetoabsorption in low density Si inversion layers
Kennedy, T. A., Wagner, R. J., McCombe, B. D., et al. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90125-9 · Cited by 62
The Wigner transition in a magnetic field
Kleppmann, W. G., & Elliott, R. J. (1975) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/8/17/012 · Cited by 61
Relation between physical and chemical processes on semiconductor surfaces
Many, A. (1973) · C R C Critical Reviews in Solid State Sciences · doi:10.1080/10408437308245841 · Cited by 61
Longitudinal and transverse dielectric functions of a two-dimensional electron system: Inclusion of exchange correlations
Rajagopal, A. K. (1977) · Physical review. B, Solid state · doi:10.1103/physrevb.15.4264 · Cited by 61
A new mechanism for negative differential conductivity in superlattices
Döhler, G. H., Tsu, R., & Esaki, L. (1975) · Solid State Communications · doi:10.1016/0038-1098(75)90302-6 · Cited by 61
Temperature dependence of the magnetoconductivity in the ground Landau level in silicon inversion layers
Kawaji, S., & Wakabayashi, J.-I. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90950-4 · Cited by 61
Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon
von Klitzing, K., Landwehr, G., & Dorda, G. (1974) · Solid State Communications · doi:10.1016/0038-1098(74)90566-3 · Cited by 61
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Magnetoconductive effects in an effectively two-dimensional system. Weak Anderson localization
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Phenomena exhibiting strong field mixing
Rau, A. R. P. (1977) · Physical Review A · doi:10.1103/physreva.16.613 · Cited by 59
Broadening of Inter-Subband Transitions in Image-Potential-Induced Surface States outside Liquid Helium
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New transitions in the photoluminescence of GaAs quantum wells
Miller, R. C., Kleinman, D. A., Munteanu, O., et al. (1981) · Applied Physics Letters · doi:10.1063/1.92548 · Cited by 58
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Voisin, P. H., Bastard, G., da Silva, C. E. T. G., et al. (1981) · Solid State Communications · doi:10.1016/0038-1098(81)91051-6 · Cited by 58
Polarizabilities of shallow donors in silicon
Bethin, J. R., Castner, T. G., & Lee, N. K. (1974) · Solid State Communications · doi:10.1016/0038-1098(74)90657-7 · Cited by 58
Analytical formulae for d.c. hopping conductivity
Butcher, P. N., Hayden, K. J., & McInnes, J. A. (1977) · Philosophical magazine · doi:10.1080/00318087708244445 · Cited by 57
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The Si/SiO2 interface examined by cross-sectional transmission electron microscopy
Blanc, J., Buiocchi, C. J., Abrahams, M. S., et al. (1977) · Applied Physics Letters · doi:10.1063/1.89289 · Cited by 56
Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
Tsui, D. C., & Kaminsky, G. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)91707-5 · Cited by 56
Electrical properties of semiconductor surfaces
Boddy, P. J. (1968) · Surface Science · doi:10.1016/0039-6028(68)90184-2 · Cited by 55
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Arnold, E. (1976) · Surface Science · doi:10.1016/0039-6028(76)90113-8 · Cited by 55
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Krämer, B., MacKinnon, A., & Weaire, D. L. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.6357 · Cited by 55
Subband Structures of N-Channel Inversion Layers on III–V Compounds –A Possibility of the Gate Controlled Gunn Effect–
Takada, Y., & Uemura, Y. (1977) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.43.139 · Cited by 55
The kinetic behavior of mobile ions in the Al-SiO2-Si system
Boudry, M. R., & Stagg, J. P. (1979) · Journal of Applied Physics · doi:10.1063/1.326016 · Cited by 55
Rechenmethoden der Quantentheorie
Flügge, S. (1993) · Springer-Lehrbuch · doi:10.1007/978-3-642-97504-2 · Cited by 55
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Drummond, T. J., Morkoç, H., Hess, K., et al. (1981) · Journal of Applied Physics · doi:10.1063/1.329426 · Cited by 54
High field magnetoconductivity of Si inversion layers
Tsui, D. C. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90843-2 · Cited by 54
Positive Magnetoresistance Induced by Zeeman Splitting in Two-Dimensional Systems
Kawabata, A. (1981) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.50.2461 · Cited by 54
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The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures
Vojak, B. A., Holonyak, N., Laidig, W. D., et al. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90252-5 · Cited by 54
Electron Tunneling and Capacitance Studies of a Quantized Surface Accumulation Layer
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Two-dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface
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Numerical studies on the anderson localization problem
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Theory of Two-Dimensional Classical Electron Plasma
Totsuji, H. (1976) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.40.857 · Cited by 53
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Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctions
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Magnetoconductance Oscillations of n -Type Inversion Layers in InSb Surfaces
Kotera, N., Katayama, Y., & Komatsubara, K. F. (1972) · Physical review. B, Solid state · doi:10.1103/physrevb.5.3065 · Cited by 53
Surface cyclotron resonance in Si under uniaxial stress
Stallhofer, P., Kotthaus, J. P., & Koch, J. F. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)90160-5 · Cited by 53
Tunneling study of surface quantization in n−PbTe
Tsui, D. C., Kaminsky, G., & Schmidt, P. H. (1974) · Physical review. B, Solid state · doi:10.1103/physrevb.9.3524 · Cited by 53
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Götze, W., Prelovšek, P., & Wölfle, P. (1979) · Solid State Communications · doi:10.1016/0038-1098(79)90654-9 · Cited by 53
The two-dimensional white noise problem and localisation in an inversion layer
Thouless, D. J., & Elzain, M. E. (1978) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/11/16/012 · Cited by 53
Raman scattering and zone-folding effects for alternating monolayers of GaAs-AlAs
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Surface quantum states in tellurium
von Klitzing, K., & Landwehr, G. (1971) · Solid State Communications · doi:10.1016/0038-1098(71)90630-2 · Cited by 53
Self-consistent theory of screening in a two dimensional electron gas under strong magnetic field
Sarma, S. D. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90071-x · Cited by 53

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Authors: Ando, T., Fowler, A. B., & Stern, F.
Affiliations: University of Tsukuba (JP)
Venue: Reviews of Modern Physics
Publisher: American Physical Society (APS)
Published: 1982-04-01
Volume: 54
Issue: 2
Pages: 437-672
ISSN: 0034-6861 (ISSN-L)
DOI: 10.1103/revmodphys.54.437
OpenAlex: W2043365391
Cited by: 7,455
References: 1,635
Citations by year: 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
FWCI: 108.29
Type: journal article
Language: en
Open access: closed
Licence: link.aps.org/licenses/aps-default-license (vor)
Locations: Reviews of Modern Physics (publishedVersion)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
Keywords: two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties

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