Cited by 7,455Quantum and electron transport phenomenaSemiconductor materials and devicesSurface and Thin Film Phenomena

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Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

DOI 10.1103/revmodphys.54.437

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Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Kamins, T. I., & MacDonald, N. (1968) · Physical Review · doi:10.1103/physrev.167.754 · Cited by 25
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Rahman, T. S., Mills, D. L., & Riseborough, P. S. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.4081 · Cited by 25
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Pomerantz, M. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)91584-3 · Cited by 25
The interaction of polar-optical phonons with a two-dimensional electron gas
Tzoar, N. (1979) · Surface Science · doi:10.1016/0039-6028(79)90147-x · Cited by 25
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Baus, M. (1978) · Journal of Statistical Physics · doi:10.1007/bf01012509 · Cited by 24
Self-consistent Debye-Waller factors of the electron solid on liquid helium
Namaizawa, H. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90161-1 · Cited by 24
Properties of the interface charge inhomogeneities in the thermally grown Si-SiO2 structure
Ziegler, K., & Klausmann, E. (1976) · Applied Physics Letters · doi:10.1063/1.88620 · Cited by 24
Single-interface enhanced mobility structures by metalorganic chemical vapour deposition
Coleman, J. J., Dapkus, P. D., & Yang, J. J. J. (1981) · Electronics Letters · doi:10.1049/el:19810426 · Cited by 24
Observation of mobility anisotropy of electrons on (110) silicon surfaces at low temperatures
Sah, C. T., Edwards, J. R., & Ning, T. H. (1972) · physica status solidi (a) · doi:10.1002/pssa.2210100117 · Cited by 24
Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temperatures
Shinba, Y., & Nakamura, K. (1981) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.50.114 · Cited by 24
Analysis of hopping conduction in impurity bands in inversion layers
Hayden, K. J., & Butcher, P. N. (1978) · Philosophical Magazine B · doi:10.1080/13642817808246337 · Cited by 24
Surface quantum oscillations in accumulation and inversion layers on tellurium
Silbermann, R., & Landwehr, G. (1975) · Solid State Communications · doi:10.1016/0038-1098(75)90002-2 · Cited by 24
Electronic surface states on liquid helium
Huang, H.-M., Shih, Y. M., & Woo, C.-W. (1974) · Journal of Low Temperature Physics · doi:10.1007/bf00658870 · Cited by 24
Electron energy loss spectroscopy studies of the Si-SiO2 interface
Adachi, T., & Helms, C. R. (1979) · Applied Physics Letters · doi:10.1063/1.91036 · Cited by 24
Self-consistent calculation of impurity scattering in inversion layers
Vinter, B. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)90174-6 · Cited by 24
Study of a two-dimensional electron gas in a magnetic field. I. Weak field
Isihara, A., & Toyoda, T. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.19.831 · Cited by 24
Transport properties of two-dimensional disordered electron systems in strong magnetic fields
Aoki, H. (1978) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/11/18/018 · Cited by 24
Field-effect mobility in quantized accumulation layers on ZnO surfaces
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K�mmel, R. (1975) · The European Physical Journal B · doi:10.1007/bf01362243 · Cited by 23
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Landwehr, G., Bangert, E., von Klitzing, K., et al. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)90092-2 · Cited by 23
Crystallization and Instabilities in Highly Anharmonic Crystals
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Katayama, Y., Yoshida, I., Kotera, N., et al. (1972) · Applied Physics Letters · doi:10.1063/1.1653968 · Cited by 22
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Charge Instabilities in Lateral Super‐Lattices under Conditions of Population Inversion
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Charge Density Waves of Two-Dimensional Electrons in Strong Magnetic Fields
Kuramoto, Y. (1978) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.44.1035 · Cited by 21
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von Ortenberg, M., & Silbermann, R. (1975) · Solid State Communications · doi:10.1016/0038-1098(75)90548-7 · Cited by 21
Far-infrared emission from Si-MOSFET’s on high-index surfaces
Tsui, D. C., & Gornik, E. (1978) · Applied Physics Letters · doi:10.1063/1.90047 · Cited by 21
Theoretical considerations on quantization for carriers in mos structures
Uemura, Y. (1976) · Surface Science · doi:10.1016/0039-6028(76)90105-9 · Cited by 21
Boundary conditions, energy spectrum, and optical transitions of electrons in bounded narrow gap crystals
Volkov, V. A., & Pinsker, T. N. (1979) · Surface Science · doi:10.1016/0039-6028(79)90512-0 · Cited by 21
Shift in cyclotron resonance of electrons on liquid helium surfaces
Cheng, A. F., & Platzman, P. M. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)90248-x · Cited by 21
Mechanical stress influence on effective masses in Si inversion layers
Eisele, I., Gesch, H., & Dorda, G. (1976) · Surface Science · doi:10.1016/0039-6028(76)90130-8 · Cited by 21
The metal-insulator transition in the impurity band of n-type GaAs induced by a magnetic field and loss of dimension
Pepper, M. (1978) · Philosophical Magazine B · doi:10.1080/01418637808226652 · Cited by 21
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Matheson, T. G., & Higgins, R. J. (1982) · Physical review. B, Condensed matter · doi:10.1103/physrevb.25.2633 · Cited by 21
The phase fixation in the systems with e-h pairing; collective modes and current states
Lozovik, Y. E., & Yudson, V. I. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90414-8 · Cited by 21
Quantum size effect with arbitrary surface potential
Cottey, A. (1973) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/6/15/008 · Cited by 21
Numerical methods in the study of the Anderson transition
Weaire, D. L., & Krämer, B. (1979) · Journal of Non-Crystalline Solids · doi:10.1016/0022-3093(79)90069-3 · Cited by 21
On the strip transmission line spectroscopy of the inter-subband transition of MOS charge layer
Nakayama, M. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90039-4 · Cited by 21
Spectroscopic studies of electron surface states on liquid helium
Zipfel, C. L., Brown, T. M., & Grimes, C. C. (1976) · Surface Science · doi:10.1016/0039-6028(76)90151-5 · Cited by 21
Electron correlation in a high density gas confined to very thin films
Zia, R. K. P. (1973) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/6/21/015 · Cited by 21
Spectroscopy of InAs subbands
Reisinger, H., & Koch, F. (1981) · Solid State Communications · doi:10.1016/0038-1098(81)91221-7 · Cited by 21
Negative Magnetoresistance in Very Strong Accumulation Layers on ZnO Surfaces
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Contributions to Localization in the Silicon Inversion Layer from States in the Gap in SiOx
Ngai, K. L., & Reinecke, T. L. (1976) · Physical Review Letters · doi:10.1103/physrevlett.37.1418 · Cited by 21
Low-frequency 1/f noise in MOSFET’s at low current levels
Aoki, M., Katto, H., & 山田, 栄. (1977) · Journal of Applied Physics · doi:10.1063/1.323592 · Cited by 21
Discussion of the surface-potential fluctuations caused by oxide-charge fluctuations
Declerck, G. J., Overstraeten, R. V., & Broux, G. L. (1974) · Journal of Applied Physics · doi:10.1063/1.1663634 · Cited by 21
On the cyclotron resonance width of an electron impurity system in two dimensions
Prasad, M., & Fujita, S. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90317-9 · Cited by 21
The electronic structure of InAs/GaSb(001) superlattices-two dimensional effects
Madhukar, A., & Nucho, R. N. (1979) · Solid State Communications · doi:10.1016/0038-1098(79)90959-1 · Cited by 20
Theory of magnetoplasmon resonance lineshape in the silicon inversion layer
Ando, T. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)90200-4 · Cited by 20
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Determination of the g-factor of electrons in N-type silicon surface inversion layers
Kobayashi, M., & Komatsubara, K. F. (1973) · Solid State Communications · doi:10.1016/0038-1098(73)90594-2 · Cited by 20
Inter-subband optical absorption in an inversion layer on a semiconductor surface in magnetic fields
Ando, T. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)91156-5 · Cited by 20
Self-citation
Degeneracy effects on semiconductor surfaces
ZEMEL, J. N., & KAPLIT, M. (1969) · Surface Science · doi:10.1016/0039-6028(69)90233-7 · Cited by 20
The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors
Baccarani, G., Mazzone, A. M., & Morandi, C. (1974) · Solid-State Electronics · doi:10.1016/0038-1101(74)90025-2 · Cited by 20
Evidence for a Valley-Occupancy Transition in Si Inversion Layers at Low Electron Densities
Cole, T., McCombe, B. D., Quinn, J. J., et al. (1981) · Physical Review Letters · doi:10.1103/physrevlett.46.1096 · Cited by 20

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Authors: Ando, T., Fowler, A. B., & Stern, F.
Affiliations: University of Tsukuba (JP)
Venue: Reviews of Modern Physics
Publisher: American Physical Society (APS)
Published: 1982-04-01
Volume: 54
Issue: 2
Pages: 437-672
ISSN: 0034-6861 (ISSN-L)
DOI: 10.1103/revmodphys.54.437
OpenAlex: W2043365391
Cited by: 7,455
References: 1,635
Citations by year: 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
FWCI: 108.29
Type: journal article
Language: en
Open access: closed
Licence: link.aps.org/licenses/aps-default-license (vor)
Locations: Reviews of Modern Physics (publishedVersion)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
Keywords: two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties

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