Cited by 7,455Quantum and electron transport phenomenaSemiconductor materials and devicesSurface and Thin Film Phenomena

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Electronic properties of two-dimensional systems

Ando, Tsuneya, Fowler, Alan B., Stern, Frank·1982·Reviews of Modern Physics

DOI 10.1103/revmodphys.54.437

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Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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Two-photon absorption in size-quantized films with tilted valleys
Zaluzny, M., & Piłat, M. (1979) · Thin Solid Films · doi:10.1016/0040-6090(79)90505-4 · Cited by 3
Theory of hot electrons on the surface of 4He
Saitoh, M., & Aoki, T. (1978) · Surface Science · doi:10.1016/0039-6028(78)90506-x · Cited by 3
Self-consistent numerical solutions of p-type inversion layers in silicon mos devices
Garcia, N. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)91230-8 · Cited by 3
Self-consistent results for n-channel silicon most at high magnetic fields
Velchev, N. B., & Nachev, I. (1980) · Surface Science · doi:10.1016/0039-6028(80)90511-7 · Cited by 3
Polarization-wave instability in quasi-two-dimensional system of electrons
Sato, K., & Nagaoka, Y. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)91097-9 · Cited by 3
Interface States Induced by Amorphous SiO2 in MOS Structures
Ôsaka, Y. (1977) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.42.533 · Cited by 3
Theory of the temperature-dependent cyclotron resonance lineshape of inversion-layer electrons
Prasad, M., Srinivas, T. K., & Fujita, S. (1978) · Surface Science · doi:10.1016/0039-6028(78)90531-9 · Cited by 3
Interaction of interface plasmons and longitudinal optical phonons in multilayer structures in the presence of a transverse conductivity
Banville, M., Caillé, A., & Zuckermann, M. J. (1980) · Physical review. B, Condensed matter · doi:10.1103/physrevb.21.355 · Cited by 3
Carrier scattering at elemental and compound semiconductor interfaces
Greene, R. (1975) · C R C Critical Reviews in Solid State Sciences · doi:10.1080/10408437508243494 · Cited by 3
Correlation energy and excitation spectra of two-dimensional electron-hole systems in high magnetic fields
Lerner, I. V., & Lozovik, Y. E. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90181-7 · Cited by 3
Submillimeter laser cyclotron resonance of inversion layers at low electron densities
Wagner, R. J., & Tsui, D. C. (1980) · Surface Science · doi:10.1016/0039-6028(80)90505-1 · Cited by 3
Hole mobility in inversion layers of MOS structures with superthin gate dielectric
Guzev, A. A., Gurtov, V. A., Rzhanov, A. V., et al. (1979) · physica status solidi (a) · doi:10.1002/pssa.2210560107 · Cited by 3
High-frequency conductivity of a two-dimensional electron gas interacting with optical phonons
Tzoar, N. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.20.1306 · Cited by 3
Temperature dependent metallic conductance above the mobility edge of a silicon inversion layer
Niederer, H. H. J. M., Matthey, A. P. M., & Sparnaay, M. (1981) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/14/28/017 · Cited by 3
Intervalley transitions in inversion layers
Döhler, G. H. (1976) · Journal of Vacuum Science and Technology · doi:10.1116/1.569017 · Cited by 3
Carrier-density dependence of the activation energies associated with hopping in two-dimensional impurity bands
Hayden, K. J. (1980) · Philosophical Magazine B · doi:10.1080/13642818008245412 · Cited by 3
Quantum Galvano-Magnetic Phenomena in M.O.S. Inversion Layers
Uemura, Y. (1974) · Proceedings of the Twelfth International Conference on the Physics of Semiconductors · doi:10.1007/978-3-322-94774-1_112 · Cited by 3
The ground state energy of a 2-D electron gas
Isihara, A., & Toyoda, T. (1977) · The European Physical Journal B · doi:10.1007/bf01325276 · Cited by 3
Recent results of high magnetic field experiments on MOSFETS in Grenoble
Landwehr, G. (1980) · Surface Science · doi:10.1016/0039-6028(80)90512-9 · Cited by 3
MAGNETIC SUSCEPTIBILITY OF A TWO-DIMENSIONAL ELECTRON GAS WITH AN ENERGY PROPORTIONAL TO kn
Marchand, A., & Lumbroso‐Bader, N. (1960) · Carbon · doi:10.1016/b978-1-4831-9835-4.50030-6 · Cited by 2
Density-of-states tails, fluctuation states, and mobility edges in systems with randomly distributed impurities
Heinrichs, J. (1978) · Physical review. B, Condensed matter · doi:10.1103/physrevb.17.3051 · Cited by 2
Faraday rotation in the Appel-Overhauser model for inversion-layer electrons in Si
O’Connell, R. F., & Wallace, G. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.24.2267 · Cited by 2
Experimental observations on thin crystals of Bi2(Te1−xSx)3 in the localization region
Soonpaa, H. H. (1980) · Surface Science · doi:10.1016/0039-6028(80)90499-9 · Cited by 2
On the two-dimensionality of many-body effects in surface quantum states of Si-MOSFETs
Rauh, H., & K�mmel, R. (1980) · The European Physical Journal B · doi:10.1007/bf01292666 · Cited by 2
Far infrared photoresistive response in silicon inversion layers and electric subband spectra
Wheeler, R. G. (1976) · Surface Science · doi:10.1016/0039-6028(76)90125-4 · Cited by 2
Broken-symmetry ground states in n-type inversion layers of Ge and GaP
Kelly, M. J., & Falicov, L. M. (1977) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/10/8/021 · Cited by 2
Effect of substrate bias on the mobility and scattering time of electrons in si inversion layers
Lakhani, A. A., & Stiles, P. J. (1976) · Surface Science · doi:10.1016/0039-6028(76)90135-7 · Cited by 2
Characterization of SiSiO2 interface with c1− ions by low temperature electron conduction measurements
Yagi, A., Namiki, M., Kusuda, K., et al. (1978) · Surface Science · doi:10.1016/0039-6028(78)90479-x · Cited by 2
Cyclotron resonance in a two-dimensional electron gas on helium surfaces
Grimes, C. C. (1979) · Journal of Magnetism and Magnetic Materials · doi:10.1016/0304-8853(79)90228-2 · Cited by 2
Exchange energy of a two-dimensional quantum plasma in a magnetic field
LaBonney, J. J., & Horing, N. J. M. (1977) · Surface Science · doi:10.1016/0039-6028(77)90055-3 · Cited by 2
Electrical Characteristics of Depletion-Type SOS MOS Devices
Onga, S., Ko, W. H., Hatanaka, K., et al. (1980) · Japanese Journal of Applied Physics · doi:10.1143/jjap.19.1675 · Cited by 2
Die Beweglichkeit von Ladungsträgern im Stromkanal von MOS-Transistoren
Friedrich, H., & Stillger, J. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90101-2 · Cited by 2
STRUCTURE OF THE ELECTRON GAS AT THE SURFACE OF LIQUID HELIUM
Grimes, C. C. (1978) · Le Journal de Physique Colloques · doi:10.1051/jphyscol:19786571 · Cited by 2
Tunneling and some electronic properties of compound semiconductors
Tsui, D. C. (1975) · C R C Critical Reviews in Solid State Sciences · doi:10.1080/10408437508243495 · Cited by 2
Two-dimensional conductivity in the contact regions of silicon MOSFETs
Kress-Rogers, E., Nicholas, R. J., Englert, T., et al. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/23/010 · Cited by 2
Mobility of Electrons in a Quantized Accumulation Layer on ZnO Limited by Phonon Scattering
Roy, J., Basu, P. K., & Nag, B. R. (1980) · physica status solidi (b) · doi:10.1002/pssb.2221020243 · Cited by 2
On the two-dimensional Wigner lattice in a magnetic field
Canel, E. (1978) · Surface Science · doi:10.1016/0039-6028(78)90513-7 · Cited by 2
Hartree calculations for n-inversion layers on stressed silicon surfaces
Tews, H. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)90063-7 · Cited by 2
Electron mobility in Si-MOSFETs with an additional implanted channel
Fischer, W. M., Jacobs, E. P., Eisele, I., et al. (1979) · Solid-State Electronics · doi:10.1016/0038-1101(79)90024-8 · Cited by 2
Anisotropic impurity scattering in electrically quantized inversion layers
Hess, K. (1975) · Solid State Communications · doi:10.1016/0038-1098(75)90032-0 · Cited by 2
Electron Conductivity-Mass Anisotropy in Silicon MOS Inversion Layers
Maeda, H. (1972) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.32.575 · Cited by 2
Two-valley model for studying the low temperature phases inn-type inversion layers of semiconductors
Paulus, U. (1978) · The European Physical Journal B · doi:10.1007/bf01320981 · Cited by 2
Melting of the two-dimensional electron solid
Nagai, T., & Ōnuki, A. (1978) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/11/16/001 · Cited by 2
Effects of finite thickness on the interacting electron gas in a surface inversion layer
Rosthal, R., & Prange, R. E. (1976) · Surface Science · doi:10.1016/0039-6028(76)90158-8 · Cited by 2
Quantum oscillations in (110) and (111)n-channel MOSFET's
Neugebauer, T., von Klitzing, K., Landwehr, G., et al. (1976) · Surface Science · doi:10.1016/0039-6028(76)90148-5 · Cited by 2
Surface quantum oscillations in tellurium inversion layers
Bouat, J., & Thuillier, J. C. (1977) · Physics Letters A · doi:10.1016/0375-9601(77)90090-1 · Cited by 2
Ferromagnetism of two-dimensional electron systems
Rajagopal, A. K., Singhal, S. P., Banerjee, M., et al. (1978) · Surface Science · doi:10.1016/0039-6028(78)90515-0 · Cited by 2
Reflectance of an array of charged conducting layers
Roberts, O. D. (1975) · The European Physical Journal B · doi:10.1007/bf01325456 · Cited by 2
Cyclotron resonance for electrons in surface states on liquid helium
Monarkha, Y. P., & Shikin, V. B. (1980) · Surface Science · doi:10.1016/0039-6028(80)90472-0 · Cited by 2
Magnetic fields and the stability of charge-density-wave ground-states in silicon inversion layers
Kelly, M. J., & Falicov, L. M. (1977) · Solid State Communications · doi:10.1016/0038-1098(77)90157-0 · Cited by 2
Nonlinear Effects of Surface Charge Waves in a n-InSb MOS Structure in a Transverse Magnetic Field
Toda, M. (1970) · Japanese Journal of Applied Physics · doi:10.1143/jjap.9.49 · Cited by 2
The connection between the thermodynamics of chemisorption on semiconductor surfaces and surface scattering of carriers
Greene, R. F. (1972) · Thin Solid Films · doi:10.1016/0040-6090(72)90171-x · Cited by 2
Charge-density wave induced cyclotron resonance harmonics on Si(111) inversion layers
Drew, H. D. (1978) · Surface Science · doi:10.1016/0039-6028(78)90528-9 · Cited by 2
Submillimeter cyclotron resonance of electrons in accumulation layers on indium antimonide surfaces
von Ortenberg, M., & Steigenberger, U. (1977) · Journal of the Optical Society of America · doi:10.1364/josa.67.000928 · Cited by 2
Electric break-throughs in vicinal planes of (001) Si inversion layers
Ohkawa, F. J. (1980) · Surface Science · doi:10.1016/0039-6028(80)90514-2 · Cited by 2
Theory of Cyclotron Resonance Line Shape in MOS Inversion Layers
Ando, T., & Uemura, Y. (1974) · Proceedings of the Twelfth International Conference on the Physics of Semiconductors · doi:10.1007/978-3-322-94774-1_123 · Cited by 2
Self-citation
Quantum effects on melting temperature of two-dimensional Wigner solid
Fukuyama, H., & Yoshioka, D. (1980) · Surface Science · doi:10.1016/0039-6028(80)90467-7 · Cited by 2
Erratum: “Self-Consistent Treatment of Two-Dimensional Anderson Localization in Magnetic Fields”
Yoshioka, D., Ono, Y., & Fukuyama, H. (1982) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.51.340b · Cited by 2
Levels of charges at surfaces of dielectrics
Khaǐkin, M. S., Trojanovsky, A. M., & Volodin, A. (1980) · Surface Science · doi:10.1016/0039-6028(80)90474-4 · Cited by 2
Correlational properties of two-dimensional electron systems in the surface states on liquid helium
Nagano, S., Ichimaru, S., & Itoh, N. (1980) · Surface Science · doi:10.1016/0039-6028(80)90469-0 · Cited by 2
Effects of long range components of random potentials on conductivity in two dimensions
Yukio, O. (1980) · Surface Science · doi:10.1016/0039-6028(80)90503-8 · Cited by 2
Theory of Bound States Associated with n-Type Inversion Layers on Silicon (001) Surfaces.
Martin, B. G., & Wallis, R. F. (1976) · Defense Technical Information Center (DTIC) · Cited by 1
Conference summary
Stern, F. (1980) · Surface Science · doi:10.1016/0039-6028(80)90541-5 · Cited by 1
Self-citation
Density-of-states mass for quantized accumulation layers measured from C-V characteristics
Roychoudhury, D., & Basu, P. K. (1977) · Solid-State Electronics · doi:10.1016/0038-1101(77)90214-3 · Cited by 1
Two-dimensional electron layers: A system for studying strong field mixing effects
Rau, A. R. P. (1980) · Surface Science · doi:10.1016/0039-6028(80)90532-4 · Cited by 1
Charge density waves in silicon inversion layers: Effect of four valley interaction terms
Quinn, J. J., & Kawamoto, G. H. (1978) · Solid State Communications · doi:10.1016/0038-1098(78)91348-0 · Cited by 1
K∥-dependence of subband energies for Si(001) n-inversion layers
Schulte, F. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90772-3 · Cited by 1
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
Enllert, T., Landwehr, G., von Klitzing, K., et al. (1978) · Surface Science · doi:10.1016/0039-6028(78)90510-1 · Cited by 1
A time-dependent anomalous threshold in silicon MOS devices fabricated on high-resistivity substrates
Nicholas, R. J., & Strading, R. A. (1976) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/9/10/003 · Cited by 1
On the optical orientation of free carriers in size quantized Pb1−xSnxTe films
Zaluzny, M. (1979) · physica status solidi (b) · doi:10.1002/pssb.2220960165 · Cited by 1
Inversion layers of tellurium in magnetic fields
Kaczmarek, E., & Bangert, E. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/4/025 · Cited by 1
PARAMETRIC EXCITATION OF ELECTRONS AT THE LIQUID HELIUM SURFACE IN A MAGNETIC FIELD
Shikin, V. B. (1978) · Le Journal de Physique Colloques · doi:10.1051/jphyscol:19786149 · Cited by 1
Influence of the MOS surface channel on a channel-to-source contact diode characteristic
Hönlein, W., von Klitzing, K., & Landwehr, G. (1980) · Surface Science · doi:10.1016/0039-6028(80)90488-4 · Cited by 1
Effect of reverse substrate bias on the minigap in Si inversion layers
Cole, T., Lakhani, A. A., & Stiles, P. J. (1981) · Solid State Communications · doi:10.1016/0038-1098(81)91062-0 · Cited by 1
Influence of electron-electron interactions on the localization of surface states
Kleppmann, W. G. (1976) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/9/8/005 · Cited by 1

Flagged first, then by citations

Research works printed but not linked: 413

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Authors: Ando, T., Fowler, A. B., & Stern, F.
Affiliations: University of Tsukuba (JP)
Venue: Reviews of Modern Physics
Publisher: American Physical Society (APS)
Published: 1982-04-01
Volume: 54
Issue: 2
Pages: 437-672
ISSN: 0034-6861 (ISSN-L)
DOI: 10.1103/revmodphys.54.437
OpenAlex: W2043365391
Cited by: 7,455
References: 1,635
Citations by year: 2026: 110 · 2025: 100 · 2024: 119 · 2023: 112 · 2022: 114 · 2021: 127 · 2020: 164 · 2019: 152 · 2018: 141 · 2017: 158 · 2016: 152 · 2015: 174 · 2014: 178 · 2013: 206 · 2012: 184
FWCI: 108.29
Type: journal article
Language: en
Open access: closed
Licence: link.aps.org/licenses/aps-default-license (vor)
Locations: Reviews of Modern Physics (publishedVersion)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Surface and Thin Film Phenomena
Keywords: two-dimensional electron systems, inversion layer, accumulation layer, semiconductor-insulator interface, Si/SiO2 interface, semiconductor heterojunctions, semiconductor superlattices, energy levels, electron transport, optical properties

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