The DOI matches its Crossref record; 23 of the 24 references it cites were found in a registry or an index.
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Abstract
The threshold voltage hysteresis in SiC power MOSFETs is rarely studied. This paper investigates the captureand emission-time constants of positive and negative charge trapped in the gate oxide and at the interface as a function of gate bias. We present a measurement technique which enables time-resolved measurement of the real Vthduring applicationrelevant bipolar ac high temperature gate stress. In addition, we use capture and emission time maps to explain the temperature dependence of AVthafter stress and are able to simulate ΔVthafter positive ac stress considering the full stress-history. Furthermore, we will show that the threshold voltage hysteresis has no harmful impact on switching operation in real applications.
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“Online monitoring of the threshold voltage needs to be fast to capture recoverable Vth due to high interface state densities [65].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [65]
Citations
Cites
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477
Grasser, T., Reisinger, H., Wagner, P.-J., Schanovsky, F., Goes, W., & Kaczer, B. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488859 · Cited by 296
Self-citationSilicon carbide: A unique platform for metal-oxide-semiconductor physics
Liu, G., Tuttle, B., & Dhar, S. (2015) · Applied Physics Reviews · doi:10.1063/1.4922748 · Cited by 293
Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements
Reisinger, H., Blank, O., Heinrigs, W., Muehlhoff, A., Gustin, W., & Schlünder, C. (2006) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2006.251260 · Cited by 282
Self-citationReisinger, H., Grasser, T., Gustin, W., & Schlünder, C. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488858 · Cited by 205
Self-citationAnalytic modeling of the bias temperature instability using capture/emission time maps
Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Gregor Pobegen, A., Nelhiebel, M., & Kaczer, B. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131624 · Cited by 184
Self-citationUnderstanding and modeling AC BTI
Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., & Schlünder, C. (2011) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2011.5784542 · Cited by 108
Self-citationRecent advances in understanding the bias temperature instability
Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, P. J., et al. (2010) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2010.5703295 · Cited by 107
Self-citationThreshold-voltage bias-temperature instability in commercially-available SiC MOSFETs
Green, R., Lelis, A. J., & Habersat, D. B. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ea03 · Cited by 87
Research works printed but not linked: 1
- 2011, CPWR-AN08 Application Considerations for SiC MOSFETs
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Farhadi, M. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.4832844 · Cited by 2
2018 IndexIEEE Transactions on Device and Materials ReliabilityVol. 18
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Power Losses Reduction of Parallel Connected Power Electronics Devices
Dou, Z., Hussain, E. K., Liu, B., Fateh, A., Liu, Y., Liu, L., Yu, Q., & Wang, X. (2023) · European Conference on Power Electronics and Applications · doi:10.23919/epe23ecceeurope58414.2023.10264492
Gate Drive Method for Reducing Threshold Voltage Drift of Silicon Carbide MOSFET
Jiang, H., Zhao, K., Liao, R., Zhong, X., & Tang, L. J. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3432191
Impact of VTH Instability in SiC for Solid-State Circuit Breaker Application
Bianda, E., Gregis, G., Mengotti, E., Schlottig, G., Raciti, L., & Masper, T. (2025) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd62843.2025.11117428
Li, Y., Tian, B., Zhao, B., Sun, P., Zhao, Z., Xu, C., Chen, Y., Pei, X., Li, J., & Wu, H. (2025) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipda-asia63772.2025.11184087
Cheng, H., Chen, Y., Xu, C., Pei, X., Li, J., & Wu, H. (2025) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipda-asia63772.2025.11184027
Kempiak, C., & Lindemann, A. (2025) · International Seminar on Power Semiconductors (ISPS) · doi:10.1109/isps65707.2025.11189908
Hu, Z., Xu, H., Ren, N., Li, J., Wan, J., & Sheng, K. (2025) · Applied Physics Letters · doi:10.1063/5.0296031
Threshold Voltage Monitoring Method for SiC MOSFET Based on DM EMI Signals
Mingxing, D., Liu, X. J., & Yin, J. (2025) · IEEE Power Electronics Magazine · doi:10.1109/mpel.2025.3602395
Design of gate drive voltage for SiC MOSFETs considering gate oxide TDDB lifetime and performance
Hayashi, S., Konishi, Y., Muraoka, S., Yamazaki, J., & Wada, K. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116079
A High Accuracy Lifetime Estimation Method for SiC MOSFETs Based on CNN-LSTM Networks
Ding, X., Wang, B., Yang, Y., Zhao, M., Yang, K., & Peng, L. (2026) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2026.3673635
The Influence of Temperature on Dynamic Threshold Voltage Drift of SiC MOSFET
Wei, J., Tang, L., Ren, L., Jiang, J., Cai, J., Luo, J., Tan, X., Tian, G., & Jiang, H. (2026) · Lecture notes in electrical engineering · doi:10.1007/978-981-95-9287-6_4
Dynamic Gate Stress Evaluation of Threshold Voltage Instability in High Voltage SiC MOSFETsPreprint
Lee, H., Lee, J., & Kim, K. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.7067982
Long-term reliability analysis of bipolar stress in SiC power MOSFETs
Hernandez-Barrios, Y. (2026) · Revista Mexicana de Física · doi:10.31349/revmexfis.72.051602
Metadata
- Authors
- Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T.
- Affiliations
- TU Wien (AT)
- Infineon Technologies (Germany) (DE)
- Infineon Technologies (Austria) (AT)
- Venue
- IEEE Transactions on Device and Materials Reliability
- Published
- 2018-06
- Volume
- 18
- Issue
- 2
- Pages
- 144-153
- ISSN
- 1530-4388 (ISSN-L)
- 1558-2574
- OpenAlex
- W2790374843
- Cited by
- 115
- References
- 24
- Citations by year
- 2026: 12 · 2025: 16 · 2024: 13 · 2023: 15 · 2022: 8 · 2021: 13 · 2020: 15 · 2019: 18 · 2018: 5
- FWCI
- 4.88
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Device and Materials Reliability (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- threshold voltage hysteresis, SiC MOSFET, charge trapping, gate oxide, interface trap charge, threshold voltage shift, temperature dependence, switching operations
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