Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Grasser, T., Reisinger, H., Wagner, P.-J., Schanovsky, F., Goes, W., & Kaczer, B. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488859 · Cited by 296

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Liu, G., Tuttle, B., & Dhar, S. (2015) · Applied Physics Reviews · doi:10.1063/1.4922748 · Cited by 293

Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

Reisinger, H., Blank, O., Heinrigs, W., Muehlhoff, A., Gustin, W., & Schlünder, C. (2006) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2006.251260 · Cited by 282

The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

Reisinger, H., Grasser, T., Gustin, W., & Schlünder, C. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488858 · Cited by 205

Analytic modeling of the bias temperature instability using capture/emission time maps

Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Gregor Pobegen, A., Nelhiebel, M., & Kaczer, B. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131624 · Cited by 184

Understanding and modeling AC BTI

Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., & Schlünder, C. (2011) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2011.5784542 · Cited by 108

Recent advances in understanding the bias temperature instability

Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, P. J., et al. (2010) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2010.5703295 · Cited by 107

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Green, R., Lelis, A. J., & Habersat, D. B. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ea03 · Cited by 87

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2938262 · Cited by 219

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi, B., Ramones, A. I., Liu, Y., Wang, H., Li, Y., Pischinger, S., & Andert, J. (2023) · IET Power Electronics · doi:10.1049/pel2.12524 · Cited by 177

Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121

Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances

Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93

A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

Gonzalez, J. A. O., & Alatise, O. M. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2870067 · Cited by 82

A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching

Jiang, H., Qi, X., Qiu, G., Zhong, X., Tang, L. J., Mao, H., Wu, Z., Chen, H., & Ran, L. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3161678 · Cited by 76

Design Methodology of DC Power Cycling Test Setup for SiC MOSFETs

Yang, F., Uğur, E., & Akin, B. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2914419 · Cited by 62

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2020) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2020.3045120 · Cited by 57

Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress

Deng, X., Huang, W., Li, X., Li, X., Chen, C., Wen, Y., Ding, J., Chen, W., Sun, Y., & Zhang, B. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3163930 · Cited by 56

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2018) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2018.8353560 · Cited by 56

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs

Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Salmen, P., Rescher, G., Gustin, W., & Grasser, T. (2023) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48203.2023.10117740 · Cited by 45

Influence of the Threshold Voltage Hysteresis and the Drain Induced Barrier Lowering on the Dynamic Transfer Characteristic of SiC Power MOSFETs

Hofstetter, P., Maier, R. W., & Bakran, M. (2019) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2019.8721772 · Cited by 42

Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3012298 · Cited by 42

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Jiang, X., Wang, J., Chen, J., Yu, H., Li, Z., & John Shen, Z. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2020.2988447 · Cited by 39

Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs

Zhao, B., Yu, Q., Sun, P., Cai, Y., & Zhao, Z. (2021) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2021.3116458 · Cited by 37

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Wang, M., Chen, Y., He, Z., Wu, Z., & Li, B. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3257885 · Cited by 35

Online Monitoring for Threshold Voltage of SiC MOSFET Considering the Coupling Impact on BTI and Junction Temperature

Xin, J., Du, M., Ouyang, Z., & Wei, K. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3056634 · Cited by 35

The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

Wu, R., Gonzalez, J. A. O., Davletzhanova, Z., Mawby, P., & Alatise, O. M. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2954654 · Cited by 33

Modeling of NBTS Effects in P-Channel Power VDMOSFETs

Danković, D., Mitrović, N., Prijić, Z., & Stojadinović, N. (2020) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2020.2974131 · Cited by 30

Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic With Temperature Compensation

Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2023.3265386 · Cited by 31

Dynamic Reliability Management in Neuromorphic Computing

Song, S., Hanamshet, J., Balaji, A., Das, A. K., Krichmar, J. L., Dutt, N. D., Kandasamy, N., & Catthoor, F. (2021) · ACM Journal on Emerging Technologies in Computing Systems · doi:10.1145/3462330 · Cited by 29

Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs

Zhao, B., Sun, P., Yu, Q., Cai, Y., & Zhao, Z. (2021) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2021.3101719 · Cited by 27

A Method for the Measurement of the Threshold-Voltage Shift of SiC MOSFETs During Power Cycling Tests

Kempiak, C., & Lindemann, A. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3039424 · Cited by 29

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

Shi, L., Qian, J., Jin, M., Bhattacharya, M., Yu, H., Shimbori, A., White, M. H., & Agarwal, A. K. (2024) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2024.108194 · Cited by 24

AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24

Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters

Gonzalez, J. A. O., & Alatise, O. M. (2018) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2018.8557810 · Cited by 25

Investigation of Reverse Recovery Phenomenon for SiC MOSFETs in High-Temperature Applications

Qian, C., Wang, Z., Zhou, D., Ge, Y., Zhou, Y., Yan, X., Xin, G., & Shi, X. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3273351 · Cited by 23

Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress

Noguchi, M., Koyama, A., Iwamatsu, T., Amishiro, H., WATANABE, H. K., & Miura, N. (2020) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm13553.2020.9371992 · Cited by 22

Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

Sun, Y., Yang, C., Yin, Z., Qin, F., & Wang, D. (2019) · Journal of Applied Physics · doi:10.1063/1.5084759 · Cited by 22

Challenges of Junction Temperature Sensing in SiC Power MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2019) · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.23919/icpe2019-ecceasia42246.2019.8797281 · Cited by 21

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Ghosh, A. K., Hao, J., Cook, M., Kendrick, C., Suliman, S. A., Hall, G. D. R., Kopley, T., & Awadelkarim, O. O. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9128318 · Cited by 21

Three-phase SiC inverter with active limitation of all MOSFETs junction temperature

Stella, F., Pellegrino, G., & Armando, E. G. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113659 · Cited by 20

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Alatise, O. M., Deb, A., Bashar, E., Gonzalez, J. A. O., Jahdi, S., & Issa, W. R. (2023) · Energies · doi:10.3390/en16114380 · Cited by 21

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Wei, J., Liu, S., Lou, R., Tang, L., Ye, R., Zhang, L., Zhang, X., Sun, W., & Bai, S. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2948836 · Cited by 20

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress

Palanisamy, S., Lutz, J., Boldyrjew-Mast, R., & Basler, T. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9129286 · Cited by 19

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs Under Gate Switching Instability

Chen, C., Wang, Z., Ye, X., Hu, Y., Wang, H., Chen, H., & Leon, J. I. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3490172 · Cited by 18

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Feil, M. W., Reisinger, H., Kabakow, A., Aichinger, T., Schleich, C., Vasil'ev, A. V., Waldhoer, D., Waltl, M., Gustin, W., & Grasser, T. (2023) · Communications Engineering · doi:10.1038/s44172-023-00053-8 · Cited by 18

Reliability and reliability investigation of wide-bandgap power devices

Lutz, J., & Franke, J. (2018) · Microelectronics Reliability · doi:10.1016/j.microrel.2018.07.001 · Cited by 18

Effect of common branch impedance coupling and mutual inductance on current sharing of paralleled SiC MOSFETs with different layouts

Zhao, B., Ke, J., Yu, Q., Sun, P., Cai, Y., & Zhao, Z. (2021) · IET Power Electronics · doi:10.1049/pel2.12211 · Cited by 17

Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences

Chen, Y., Rao, Y., Wang, M., Gao, R., He, Z., Chen, Y., & Lai, P. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3365776 · Cited by 17

Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETs

Noguchi, M., Koyama, A., Iwamatsu, T., Watanabe, H., & Miura, N. (2021) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm19574.2021.9720679 · Cited by 16

On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices

Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., & Grasser, T. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3036321 · Cited by 16

Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation

Watanabe, T., Fukui, Y., Hino, S., Tomohisa, S., Miura, N., & Nishikawa, K. (2023) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2023.3234979 · Cited by 15

Working principle and characteristic analysis of SiC MOSFET

Yao, J. (2023) · Journal of Physics Conference Series · doi:10.1088/1742-6596/2435/1/012022 · Cited by 15

Investigation of Aging’s Effect on the Conduction and Switching Loss in SiC MOSFETs

Yang, F., Uğur, E., Pu, S., Akin, B., & Das, M. K. (2019) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2019.8912284 · Cited by 15

Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C

Yang, L., Bai, Y., Li, C., Yang, C., Chen, H., Tang, Y., Hao, J., Tian, X., & Liu, X. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3224638 · Cited by 14

Dynamic characterization of SiC and GaN devices with BTI stresses

Gonzalez, J. A. O., Hedayati, M. H., Jahdi, S., Stark, B. H., & Alatise, O. M. (2019) · Microelectronics Reliability · doi:10.1016/j.microrel.2019.06.081 · Cited by 14

Grid Fault Current Injection Using Virtual Synchronous Machines Featuring Active Junction Temperature Limitation of Power Devices

Mandrile, F., Stella, F., Carpaneto, E., & Bojoi, R. I. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3154488 · Cited by 14

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs

Habersat, D. B., Green, R., & Lelis, A. J. (2019) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2019.8720538 · Cited by 13

BTI saturation and universal relaxation in SiC power MOSFETs

Sánchez, L., Acurio, E., Crupi, F., Reggiani, S., & Meneghesso, G. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113642 · Cited by 11

Chip Screening Method for Suppressing Current Imbalance of Parallel-Connected SiC MOSFETs

Zhao, B., Sun, P., Yu, Q., Cai, Y., Cai, J., & Zhao, Z. (2021) · International Conference on Energy, Electrical and Power Engineering (CEEPE) · doi:10.1109/ceepe51765.2021.9475791 · Cited by 10

Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET

Xu, C., Zhong, X., Jiang, H., Qiu, G., Tang, L. J., & Ran, L. (2021) · International Conference on Energy, Electrical and Power Engineering (CEEPE) · doi:10.1109/ceepe51765.2021.9475706 · Cited by 9

Recovery of Quasi-Permanent Bias Temperature Instability in SiC MOSFETs and Its Physical Mechanism

Li, K., Sun, P., He, Z., Huang, X., Li, Q., Chen, L., Luo, Q., & Du, X. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3394476 · Cited by 9

Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias

Liang, Y., Zhang, Y., Zhang, J., He, X., Zhao, Y., Cui, M., Wen, H., Wang, M., & Liu, W. (2022) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2022.3212697 · Cited by 9

Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents

Pan, W., Jian, L., & Liu, T. (2022) · Technology Analysis and Strategic Management · doi:10.1080/09537325.2022.2106419 · Cited by 9

Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications

Jiang, J., Tang, X., Tan, K., Hu, Z., Tian, M., Xu, Y., Li, H., Zhu, W., Li, H., Hu, C., et al. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3403956 · Cited by 8

Characterization of BTI in SiC MOSFETs Using Third Quadrant Characteristics

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2019) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2019.8757624 · Cited by 8

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

Habersat, D. B., Lelis, A. J., & Green, R. (2019) · Materials science forum · doi:10.4028/www.scientific.net/msf.963.757 · Cited by 8

Fast Switching SiC Cascode JFETs for EV Traction Inverters

Wu, R., Gonzalez, J. A. O., Davletzhanova, Z., Mawby, P., & Alatise, O. M. (2020) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec39645.2020.9124052 · Cited by 8

Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs

García-Meré, J. R., Gómez, A. A., Roig, J., Rodríguez, J., & Rodríguez, A. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509430 · Cited by 7

Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs*

Chen, X., Shi, B., Li, X., Fan, H.-Y., Li, C.-Z., Deng, X., Luo, H., Wu, Y., & Zhang, B. (2020) · Chinese Physics B · doi:10.1088/1674-1056/abd391 · Cited by 7

Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs

Yang, F., Pu, S., Akin, B., Butler, S. W., & Wang, G. (2021) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec42165.2021.9487466 · Cited by 7

Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors

Kestler, T., & Bakran, M. (2019) · European Conference on Power Electronics and Applications · doi:10.23919/epe.2019.8915530 · Cited by 7

Characterization and Modeling of BTI in SiC MOSFETs

Cornigli, D., Tallarico, A. N., Reggiani, S., Fiegna, C., SANGIORGI, E., Sanchez, L., Valdivieso, C., Consentino, G., & Crupi, F. (2019) · European Solid-State Device Research Conference · doi:10.1109/essderc.2019.8901761 · Cited by 7

TCAD modeling of bias temperature instabilities in SiC MOSFETs

Carangelo, G., Reggiani, S., Consentino, G., Crupi, F., & Meneghesso, G. (2021) · Solid-State Electronics · doi:10.1016/j.sse.2021.108067 · Cited by 6

Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory

Dhyani, M., Singh, S., Tzhayek, N., & Bernstein, J. B. (2025) · Micromachines · doi:10.3390/mi16121351 · Cited by 5

The Role of the Gate Resistance and Device Variability on the Dynamic Performance of Parallel SiC Power MOSFETs

Race, S., Nagel, M., Brandl, A. K., Kovacevic-Badstuebner, I., Popescu, D., Popescu, B., & Großner, U. (2024) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd59661.2024.10579681 · Cited by 5

Comprehensive Investigations on Recovery Characteristics of Bias Temperature Instability in Planar and Trench SiC MOSFETs

Li, K., Sun, P., Zhou, X., Chen, L., & Liu, Q. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3485055 · Cited by 4

Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs

Boldyrjew-Mast, R., Herrmann, C., Liu, X., Li, X., & Basler, T. (2025) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48204.2025.10983112 · Cited by 6

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms

Bernstein, J. B., Avraham, T., & Wang, B. (2026) · Micromachines · doi:10.3390/mi17030320 · Cited by 4

Lifetime projection for BTI assuming non-constant power law exponent

Bernstein, J. B. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116147 · Cited by 4

Systematic study on temperature and time-varying characteristics of SiC MOSFET static parameters at 200 °C

Ma, X., Wang, J., & Ding, L. (2023) · Journal of Power Electronics · doi:10.1007/s43236-023-00711-2 · Cited by 4

Dynamic Reverse Bias Test Circuit for SiC MOSFET with Adjustable dV ds/dt

Lu-Wei, Z., Hui, M., Zhou, Z., Yu, B., Haoze, L., & Xin, Z. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567430 · Cited by 4

Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs

Boldyrjew-Mast, R., Bäumler, C., Wenisch-Kober, F. B., Liu, X., & Basler, T. (2022) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd49238.2022.9813675 · Cited by 4

Online Monitoring Method for SiC MOSFET Gate Oxide Degradation Based on Gate Voltage Filtering

Liu, J., Yao, B., Wei, X., Zhang, Y., & Wang, H. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509036 · Cited by 4

Crosstalk in SiC Power MOSFETs for Evaluation of Threshold Voltage Shift Caused by Bias Temperature Instability

Gonzalez, J. A. O., & Alatise, O. M. (2019) · European Conference on Power Electronics and Applications · doi:10.23919/epe.2019.8915508 · Cited by 4

Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress

Liao, P., Wang, Y., Guo, J.-B., Sun, Q., Zhang, D. W., & Xu, H. (2025) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2025.3649972 · Cited by 3

Power-Law Degradation and Lifetime Interpretation in Microelectronics Reliability

Bernstein, J. B. (2026) · Applied Sciences · doi:10.3390/app16115387 · Cited by 3

Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode Voltage under Body Effect

Xin, J., Zheng, L., Dai, Q., Du, M., Ouyang, Z., & Zhou, E. (2021) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec50170.2021.9510634 · Cited by 3

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Rasinger, F., Hauck, M., Rescher, G., Aichinger, T., Weber, H. B., Krieger, M., & Gregor Pobegen, A. (2019) · Applied Physics Letters · doi:10.1063/1.5117829 · Cited by 3

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9129637 · Cited by 3

Decoupling Effects for Dynamic Switching Stress in SiC MOSFETs

Gómez, A. A., García-Meré, J. R., Rodríguez, A., Rodríguez, J., Jiménez-Guerra, C., & Roig, J. (2025) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2025.3534183 · Cited by 2

An Investigation Into the Mechanism of AC Bias Temperature Instability in SiC MOSFETs Through Gate Charging Characteristics

Wang, Z., Chen, C., Ye, X., Du, J., Niu, H., Zhai, G., Alcaide, A. M., Leon, J. I., & Franquelo, L. G. (2025) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2025.3604592 · Cited by 2

Trade-offs Between Gate Oxide Protection and Performance in SiC MOSFETs

Gonzalez, J. A. O., Wu, R., & Alatise, O. M. (2020) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce44975.2020.9235843 · Cited by 2

Physical Modeling of Threshold Voltage Shift during Recovery Phase in SiC-based Transistors

Mao, L. (2025) · Semiconductors · doi:10.1134/s1063782624602930 · Cited by 2

Bias-Induced Instability of 4H-SiC CMOS

Wen, Y. X., & Tsui, B. Y. (2023) · Materials science forum · doi:10.4028/p-t5m16p · Cited by 2

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2019) · Materials science forum · doi:10.4028/www.scientific.net/msf.963.749 · Cited by 2

Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation

Jin, R., Ren, N., Xu, H., & Sheng, K. (2023) · IEEE International Power Electronics and Application Symposium (PEAS) · doi:10.1109/peas58692.2023.10395298 · Cited by 1

Investigations of Off-line Calibration and Consistency of SiC MOSFETs with Different Gate Structures

Liao, Y., Xu, Z., Wang, H., Ge, X., & Wang, Y. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567893 · Cited by 1

Long-term positive and negative gate bias stress tests on parallel connected SiC MOSFETs at −40 °C and 175 °C

Deb, A., Taha, M., Gonzalez, J. A. O., Mawby, P., Jahdi, S., Etoz, B., & Alatise, O. M. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115834 · Cited by 1

Dynamic Current Balancing Methodfor Parallel SiC MOSFETs Based on Threshold Voltage Sorting underAsymmetric Layout

Li, Y., Zhang, Y., Zhao, B., Sun, P., Zhao, Z., Li, X., Cai, Y., Xu, C., & Chen, Y. (2025) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec64805.2025.11116658 · Cited by 1

Bias Temperature Instability of SiC Trench MOSFET under DC and AC gate stress

Yu, K., Wang, Q., Wang, Y., & Wang, J. (2025) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipda-asia63772.2025.11183909 · Cited by 1

A 6.5 kV/100A Low‐Inductance SiC MOSFET Power Module With Integrated Current Monitoring for Parallel Chips

Zhang, Y., An, K., Li, Y., Tian, B., Qu, Z., Sun, P., Zhao, B., Cai, Y., & Zhao, Z. (2025) · IET Power Electronics · doi:10.1049/pel2.70116 · Cited by 1

Correlation of trap generation in SiC MOSFETs under γ-ray irradiation and bias temperature stress

Liang, X., Zhang, D., Wei, Y., Feng, J., Zheng, Q., Wen, L., Yu, X., Guo, Q., Zhang, T., & Li, Y. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116007 · Cited by 1

Reliability of Wide Bandgap Semiconductors for Automotive Applications

Kaminski, N., Basler, T., Boldyrjew-Mast, R., El-Barbari, S., Franke, J., Rittner, M., Salmen, P., Schmitt, S., Senftleben, O., Tuellmann, M., et al. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3672721 · Cited by 2

Linearization of BTI Degradation Across Si, SiC, and GaN

Bernstein, J. B., Avraham, T., & Wang, B. (2026) · Micro · doi:10.3390/micro6020031 · Cited by 1

Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress

He, L., Zhang, M., Li, C., Niu, H., Shi, Y., Chen, X., Fang, S., Wang, Z., & Chen, Y. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3706282 · Cited by 1

A New Method of The Active Gate Driver for Current Balancing in The Parallel MOSFET Circuits

Sulistyo, M. E., Kaleg, S., Waskitho, D. A., Ristiana, R., Muharam, A., Budiman, A. C., Sudirja, S., Amin, A., & Ismail, K. (2023) · Evergreen · doi:10.5109/7151765 · Cited by 1

OPTIMISATION OF THE GATE VOLTAGE IN SiC MOSFETS: EFFICIENCY VS RELIABILITY

Gonzalez, J. A. O., Wu, R., Wu, H., Wang, X., Pickert, V., Mawby, P., & Alatise, O. M. (2021) · IET conference proceedings. · doi:10.1049/icp.2021.1043 · Cited by 1

Investigation on SiC MOSFETs with Long Time Nitridation Treatment under Dynamic High Temperature Gate Stress

Wu, Z., Liang, S., Deng, G., & Wang, J. (2022) · IEEE International Power Electronics and Application Conference and Exposition (PEAC) · doi:10.1109/peac56338.2022.9959397 · Cited by 1

Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2017) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/iirw.2017.8361232 · Cited by 40

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2018) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2018.8353560 · Cited by 56

Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias

Unger, C., & Pfost, M. (2019) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2019.8757661 · Cited by 20

Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET Under Switching Stress

Li, X., Deng, X., Huang, J., Li, X., Chen, W., & Zhang, B. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3409570 · Cited by 6

Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions

Xie, D., Heimler, P., Boldyrjew-Mast, R., Alaluss, M., Thiele, S., Lutz, J., & Basler, T. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115657 · Cited by 8