The DOI matches its Crossref record; 23 of the 24 references it cites were found in a registry or an index.
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Abstract
The threshold voltage hysteresis in SiC power MOSFETs is rarely studied. This paper investigates the captureand emission-time constants of positive and negative charge trapped in the gate oxide and at the interface as a function of gate bias. We present a measurement technique which enables time-resolved measurement of the real Vthduring applicationrelevant bipolar ac high temperature gate stress. In addition, we use capture and emission time maps to explain the temperature dependence of AVthafter stress and are able to simulate ΔVthafter positive ac stress considering the full stress-history. Furthermore, we will show that the threshold voltage hysteresis has no harmful impact on switching operation in real applications.
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“Online monitoring of the threshold voltage needs to be fast to capture recoverable Vth due to high interface state densities [65].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [65]
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Cites
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477
Grasser, T., Reisinger, H., Wagner, P.-J., Schanovsky, F., Goes, W., & Kaczer, B. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488859 · Cited by 296
Self-citationSilicon carbide: A unique platform for metal-oxide-semiconductor physics
Liu, G., Tuttle, B., & Dhar, S. (2015) · Applied Physics Reviews · doi:10.1063/1.4922748 · Cited by 293
Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements
Reisinger, H., Blank, O., Heinrigs, W., Muehlhoff, A., Gustin, W., & Schlünder, C. (2006) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2006.251260 · Cited by 282
Self-citationReisinger, H., Grasser, T., Gustin, W., & Schlünder, C. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488858 · Cited by 205
Self-citationAnalytic modeling of the bias temperature instability using capture/emission time maps
Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Gregor Pobegen, A., Nelhiebel, M., & Kaczer, B. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131624 · Cited by 184
Self-citationUnderstanding and modeling AC BTI
Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., & Schlünder, C. (2011) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2011.5784542 · Cited by 108
Self-citationRecent advances in understanding the bias temperature instability
Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, P. J., et al. (2010) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2010.5703295 · Cited by 107
Self-citationThreshold-voltage bias-temperature instability in commercially-available SiC MOSFETs
Green, R., Lelis, A. J., & Habersat, D. B. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ea03 · Cited by 87
On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
Rescher, G., Gregor Pobegen, A., Aichinger, T., & Grasser, T. (2016) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2016.7838392 · Cited by 81
Self-citationOn the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale
Pobegen, G., & Grasser, T. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2264816 · Cited by 61
Self-citationOn the temperature dependence of NBTI recovery
Aichinger, T., Nelhiebel, M., & Grasser, T. (2008) · Microelectronics Reliability · doi:10.1016/j.microrel.2008.06.018 · Cited by 47
Self-citationThreshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2017) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/iirw.2017.8361232 · Cited by 40
Self-citationUnderstanding temperature acceleration for NBTI
Gregor Pobegen, A., Aichinger, T., Nelhiebel, M., & Grasser, T. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131623 · Cited by 39
Self-citationThreshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
Rescher, G., Pobegen, G., & Grasser, T. (2016) · Materials science forum · doi:10.4028/www.scientific.net/msf.858.481 · Cited by 35
Self-citationComplete extraction of defect bands responsible for instabilities in n and pFinFETs
Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., & Grasser, T. (2016) · Symposium on VLSI Technology · doi:10.1109/vlsit.2016.7573437 · Cited by 32
Self-citationOn the impact of the NBTI recovery phenomenon on lifetime prediction of modern p-MOSFETs
Schlünder, C., Heinrigs, W., Gustin, W., & Reisinger, H. (2006) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/irws.2006.305199 · Cited by 29
Self-citationIllarionov, Y. Y., Smith, A. D., Vaziri, S., Östling, M., Mueller, T., Lemme, M. C., & Grasser, T. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2480704 · Cited by 26
Self-citationEvaluations of threshold voltage stability on COTS SiC DMOSFETs using fast measurements
Habersat, D. B., Green, R., & Lelis, A. J. (2016) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2016.7574588 · Cited by 23
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Temperature-dependent threshold stability of COTS SiC MOSFETs during gate switching
Habersat, D. B., Green, R., & Lelis, A. J. (2017) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2017.7936413 · Cited by 18
Rescher, G., Gregor Pobegen, A., Aichinger, T., & Grasser, T. (2018) · Materials science forum · doi:10.4028/www.scientific.net/msf.924.671 · Cited by 8
Self-citation
Research works printed but not linked: 1
- 2011, CPWR-AN08 Application Considerations for SiC MOSFETs
Cited by
Sorted by citations
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2938262 · Cited by 219
Self-citationShi, B., Ramones, A. I., Liu, Y., Wang, H., Li, Y., Pischinger, S., & Andert, J. (2023) · IET Power Electronics · doi:10.1049/pel2.12524 · Cited by 177
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
Gonzalez, J. A. O., & Alatise, O. M. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2870067 · Cited by 82
Metadata
- Authors
- Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T.
- Affiliations
- TU Wien (AT)
- Infineon Technologies (Germany) (DE)
- Infineon Technologies (Austria) (AT)
- Venue
- IEEE Transactions on Device and Materials Reliability
- Published
- 2018-06
- Volume
- 18
- Issue
- 2
- Pages
- 144-153
- ISSN
- 1530-4388 (ISSN-L)
- 1558-2574
- OpenAlex
- W2790374843
- Cited by
- 115
- References
- 24
- Citations by year
- 2026: 12 · 2025: 16 · 2024: 13 · 2023: 15 · 2022: 8 · 2021: 13 · 2020: 15 · 2019: 18 · 2018: 5
- FWCI
- 4.88
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Device and Materials Reliability (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- threshold voltage hysteresis, SiC MOSFET, charge trapping, gate oxide, interface trap charge, threshold voltage shift, temperature dependence, switching operations
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