The DOI matches its Crossref record; 129 of the 133 references it cites were found in a registry or an index.
A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices
Open accessAbstract
This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.
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“Representative TSEPs include V DS ( on ) , threshold voltage ( V th ), drain leakage current ( I dss ), dI / dt , and gate current ( I gp); these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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“these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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“while dI / dt and I gp are commonly used in SiC MOSFETs [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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Citations
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Metadata
- Authors
- Hanif, A., Yu, Y., DeVoto, D., & Khan, F.
- Affiliations
- University of Missouri–Kansas City (US)
- University of Utah (US)
- National Laboratory of the Rockies (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2019-05
- Volume
- 34
- Issue
- 5
- Pages
- 4729-4746
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2884957744
- Cited by
- 272
- References
- 133
- Citations by year
- 2026: 34 · 2025: 61 · 2024: 40 · 2023: 47 · 2022: 28 · 2021: 30 · 2020: 24 · 2019: 7
- FWCI
- 5.84
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- National Renewable Energy Laboratory
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Keywords
- power devices, failure mechanisms, lifetime prediction, accelerated aging, remaining life estimation, junction temperature measurement, condition monitoring
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