Cited by 272Silicon Carbide Semiconductor TechnologiesReliability and Maintenance OptimizationIntegrated Circuits and Semiconductor Failure Analysis

The DOI matches its Crossref record; 129 of the 133 references it cites were found in a registry or an index.

A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices

Open access
Hanif, Abu, Yu, Yuechuan, DeVoto, Douglas, Khan, Faisal·2019·IEEE Transactions on Power Electronics

Abstract

This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.

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Crossref · 10.1109/tpel.2018.2860587

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4 of the 133 references couldn’t be matched to a known paper.

Research works printed but not linked: 7

  1. singh, 0, Power MOSFET failure mechanisms, telecommunications energy conference, Proc 26th Annu Int Telecommun Energy Conf, 499
  2. valentine, 0, Failure mechanisms of insulated gate bipolar transistors (IGBTs), Proc NREL Photovolt Rel Workshops, 6
  3. scheuermann, 0, Chip temperature measurement without additional sensors, Bodo's Power Syst, 58
  4. 2017, Standard Practices for Cycle Counting in Fatigue Analysis Annual Book of ASTM Standards
  5. 2010, Power Semiconductor Reliability Handbook, Alpha & Omega Semiconductor, 8
  6. 10.1109/TPEL.2016.2521899 · DOI · Paper page
  7. lobsiger, 0, Voltage, current and temperature measurement concepts enabling intelligent gate drives, ECPE Workshop Electronics Around the Power Switch Gate Drives Sensors and Control

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Metadata

Authors
Hanif, A., Yu, Y., DeVoto, D., & Khan, F.
Affiliations
  • University of Missouri–Kansas City (US)
  • University of Utah (US)
  • National Laboratory of the Rockies (US)
Venue
IEEE Transactions on Power Electronics
Published
2019-05
Volume
34
Issue
5
Pages
4729-4746
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
OpenAlex
W2884957744
Cited by
272
References
133
Citations by year
2026: 34 · 2025: 61 · 2024: 40 · 2023: 47 · 2022: 28 · 2021: 30 · 2020: 24 · 2019: 7
FWCI
5.84
Type
journal article
Language
en
Open access
Locations
  • IEEE Transactions on Power Electronics (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
Funders
National Renewable Energy Laboratory
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
Keywords
power devices, failure mechanisms, lifetime prediction, accelerated aging, remaining life estimation, junction temperature measurement, condition monitoring

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