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Cited by 316Photonic and Optical Devices3D IC and TSV technologiesSemiconductor Lasers and Optical Devices

The DOI matches its Crossref record; 60 of the 60 references it cites were found in a registry or an index.

Hybrid Integrated Platforms for Silicon Photonics

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Liang, Di, Roelkens, Gunther, Baets, Roel, Bowers, John·2010·Materials
DOI 10.3390/ma3031782PMC PMC5445873
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Abstract

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

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Figures

Figure 1 Schematic process flow for O2 plasma-assisted and SiO2 covalent wafer bonding.
Figure 1 Schematic process flow for O2 plasma-assisted and SiO2 covalent wafer bonding.CC BY · PubMed Central
Figure 2 (a) Schematic cartoons of vertical outgassing channels (VOCs) on the SOI substrate before (top) and after (bottom) contacting InP epitaxial layers. (b) Normaski microscopic images of an InP-to-SOI bonded pair after 300 °C anneal for 30 min, showing noticeable contrast between VOC region (yellow dash line box) and non-VOC region. (c) SEM cross-sectional view of VOCs with InP epitaxial layers bonded on top, showing intimate contact with no deformation or delamination. Red dash line box highlights a single VOC.
Figure 2 (a) Schematic cartoons of vertical outgassing channels (VOCs) on the SOI substrate before (top) and after (bottom) contacting InP epitaxial layers. (b) Normaski microscopic images of an InP-to-SOI bonded pair after 300 °C anneal for 30 min, showing noticeable contrast between VOC region (yellow dash line box) and non-VOC region. (c) SEM cross-sectional view of VOCs with InP epitaxial layers bonded on top, showing intimate contact with no deformation or delamination. Red dash line box highlights a single VOC.CC BY · PubMed Central
Figure 3 SAM images of (a) 50 mm and (b) 100 mm InP-to-Si bonded wafers. Interfacial voids are highlighted in red circles and yellow arrows indicate the horizontal (vertical in the image) scan lines and a pattern from the wafer chuck related to the tool.
Figure 3 SAM images of (a) 50 mm and (b) 100 mm InP-to-Si bonded wafers. Interfacial voids are highlighted in red circles and yellow arrows indicate the horizontal (vertical in the image) scan lines and a pattern from the wafer chuck related to the tool.CC BY · PubMed Central
Figure 4 (a) Photograph of processed 150 mm diameter O2 plasma-assisted bonded wafer showing individual device dies. (b) IR image of 150 mm SiO2 covalent bonded wafer with CMOS devices successfully transferred.
Figure 4 (a) Photograph of processed 150 mm diameter O2 plasma-assisted bonded wafer showing individual device dies. (b) IR image of 150 mm SiO2 covalent bonded wafer with CMOS devices successfully transferred.CC BY · PubMed Central
Figure 5 (a) Wafer warpage contour composed of 81 Omega scans at a 9 × 9 matrix with 12 mm step size. (b) Schematic warpage of bonded wafer pair with a bowing of 64.12 μm with a corresponding surface radius of 27.64 m based on the largest omega angle difference measured in (a).
Figure 5 (a) Wafer warpage contour composed of 81 Omega scans at a 9 × 9 matrix with 12 mm step size. (b) Schematic warpage of bonded wafer pair with a bowing of 64.12 μm with a corresponding surface radius of 27.64 m based on the largest omega angle difference measured in (a).CC BY · PubMed Central
Figure 6 Overview of the DVS-BCB die-to-wafer bonding process.
Figure 6 Overview of the DVS-BCB die-to-wafer bonding process.CC BY · PubMed Central
Figure 7 Polymerization reaction of the DVS-BCB monomer.
Figure 7 Polymerization reaction of the DVS-BCB monomer.CC BY · PubMed Central
Figure 8 SEM cross-section images of transferred III-V layer stacks and a top-down view.
Figure 8 SEM cross-section images of transferred III-V layer stacks and a top-down view.CC BY · PubMed Central
Figure 9 Curvature of the bonded stack as a function of temperature.
Figure 9 Curvature of the bonded stack as a function of temperature.CC BY · PubMed Central
Figure 10 A simplified fabrication process to form the hybrid Si device platform. (a) Bonding of the III-V wafer to the patterned SOI wafer. (b) InP substrate removal and mesa etching. (c) Current confinement and metal contact formation.
Figure 10 A simplified fabrication process to form the hybrid Si device platform. (a) Bonding of the III-V wafer to the patterned SOI wafer. (b) InP substrate removal and mesa etching. (c) Current confinement and metal contact formation.CC BY · PubMed Central
Figure 11 Mode profiles with different waveguide widths. The height of the Si waveguide is fixed at 0.7 μm [42].
Figure 11 Mode profiles with different waveguide widths. The height of the Si waveguide is fixed at 0.7 μm [42].CC BY · PubMed Central
Figure 12 Schematic of the layout of the optical coupling scheme for efficient and fabrication tolerant coupling between a bonded Fabry-Perot laser diode and an underlying SOI waveguide circuit using an inverted adiabatic taper approach [44].
Figure 12 Schematic of the layout of the optical coupling scheme for efficient and fabrication tolerant coupling between a bonded Fabry-Perot laser diode and an underlying SOI waveguide circuit using an inverted adiabatic taper approach [44].CC BY · PubMed Central

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Metadata

Authors
Liang, D., Roelkens, G., Baets, R., & Bowers, J.
Affiliations
  • University of California, Santa Barbara (US)
  • Photonics Research Group, IMEC - Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium
  • Ghent University (BE)
Corresponding author
Liang, Di
ORCID
Venue
Materials
Publisher
MDPI AG
Published
2010-03-12
Volume
3
Issue
3
Pages
1782-1802
ISSN
1996-1944 (ISSN-L)
DOI
10.3390/ma3031782
PMC
PMC5445873
OpenAlex
W2112113449
Cited by
316
References
60
Citations by year
2026: 6 · 2025: 19 · 2024: 17 · 2023: 20 · 2022: 27 · 2021: 21 · 2020: 18 · 2019: 15 · 2018: 27 · 2017: 23 · 2016: 26 · 2015: 28 · 2014: 25 · 2013: 19 · 2012: 14
FWCI
11.10
Type
journal article
Language
en
Open access
Licence
Locations
  • Materials (publishedVersion, cc-by)
  • Europe PMC (PubMed Central) (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion, other-oa)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion)
Funders
  • Vlaamse regering
  • Defense Advanced Research Projects Agency
  • University of California, Santa Barbara
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
hybrid integration, silicon photonics, III-V on silicon, silicon-on-insulator, wafer bonding, bond strength, stress distribution, active photonic devices, passive optical components

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