Cited by 277Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhase-change materials and chalcogenides

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Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

Yoon, Jung Ho, Song, Seul Ji, Yoo, Il‐Hyuk, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Hwang, Cheol Seong·2014·Advanced Functional Materials

DOI 10.1002/adfm.201400064

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Abstract

The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and electroforming‐free characteristics is an impending task for the development of resistance switching random access memory. In this work, a two‐layered dielectric structure consisting of HfO 2 and Ta 2 O 5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration. The HfO 2 layer works as the resistance switching layer by trapping or detrapping of electronic carriers, whereas the Ta 2 O 5 layer remains intact during the whole switching cycle, which provides the rectification. With the optimized structure and operation conditions for the given materials, excellent RS uniformity, electroforming‐free, and self‐rectifying functionality could be simultaneously achieved from the Pt/Ta 2 O 5/HfO 2/TiN structure.

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Authors: Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S.
Affiliations: Seoul National University (KR)
Corresponding author: Hwang, Cheol Seong
ORCID: Yoon, Jung Ho
Yoon, Kyung Jean
Hwang, Cheol Seong
Venue: Advanced Functional Materials
Publisher: Wiley
Published: 2014-05-26
Volume: 24
Issue: 32
Pages: 5086-5095
ISSN: 1616-301X (ISSN-L)
1616-3028
DOI: 10.1002/adfm.201400064
OpenAlex: W2167342413
Cited by: 277
References: 31
Citations by year: 2026: 17 · 2025: 34 · 2024: 30 · 2023: 27 · 2022: 21 · 2021: 26 · 2020: 23 · 2019: 23 · 2018: 21 · 2017: 15 · 2016: 22 · 2015: 17 · 2014: 1
FWCI: 9.74
Type: journal article
Language: en
Open access: closed
Licence: onlinelibrary.wiley.com/termsAndConditions#vor (vor)
Locations: Advanced Functional Materials (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords: resistive random access memory, electroforming-free switching, hafnium oxide, tantalum pentoxide, TiN electrodes, platinum electrode, carrier trapping and detrapping, random access memory

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Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

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