Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

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Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

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High-Density Crossbar Arrays Based on a Si Memristive System

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Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

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Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

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Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

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Recent Developments in Oxide-Based Ionic Conductors: Bulk Materials, Nanoionics, and Their Memory Applications

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Nano-engineering and functionalization of hybrid Au–Me x O y –TiO 2 (Me = W, Ga) hetero-interfaces for optoelectronic receptors and nociceptors

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Threshold Modulative Artificial GABAergic Nociceptor

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Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta 2 O 5 /Ta and TiN/HfO 2 /Ta 2 O 5 /Ta Stacks

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Effect of growth temperature on self-rectifying BaTiO3/ZnO heterojunction for high-density crossbar arrays and neuromorphic computing

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Localized Conduction Channels in Memristors

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Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device

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Improved performance of ITO/TiO 2 /HfO 2 /Pt random resistive accessory memory by nitrogen annealing treatment

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High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film

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Programmable, electroforming-free TiO x /TaO x heterojunction-based non-volatile memory devices

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Self-rectifying resistance switching memory based on a dynamic p–n junction

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A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing

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A Comprehensive Review of Electrochemical Metallization and Valence Change Mechanisms in Filamentary Resistive Switching of Halide Perovskite-Based Memory Devices

Kim, H., Yang, S. J., Shim, Y., & Moon, C. W. (2025) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c09862 · Cited by 26

Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx‐Based Memory Platform

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Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices

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Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level

Liao, C., Hu, X., Liu, X., Sun, B. T., & Zhou, G. (2022) · Applied Physics Letters · doi:10.1063/5.0102076 · Cited by 26

Thin TiO x layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta 2 O 5 /Ta resistance switching memory

Li, X. Y., Shao, X. L., Wang, Y. C., Jiang, H., Hwang, C. S., & Zhao, J. (2017) · Nanoscale · doi:10.1039/c6nr08470b · Cited by 25

Tuning tunnel barrier in Si3N4-based resistive memory embedding SiO2 for low-power and high-density cross-point array applications

Kim, S., & Park, B. (2015) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2015.12.107 · Cited by 25

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

Abbas, H., Park, M. R., Abbas, Y., Hu, Q., Kang, T. S., Yoon, T., & Kang, C. J. (2018) · Japanese Journal of Applied Physics · doi:10.7567/jjap.57.06hc03 · Cited by 25

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Song, S. J., Park, T., Yoon, K. J., Yoon, J. H., Kwon, D. E., Noh, W., Lansalot‐Matras, C., Gatineau, S., Lee, H.-K., Gautam, S., et al. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b11613 · Cited by 24

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

Ismail, M., Mahata, C., Kang, M., & Kim, S. (2023) · Ceramics International · doi:10.1016/j.ceramint.2023.03.030 · Cited by 22

Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices

Marquardt, R., Zahari, F., Carstensen, J., Popkirov, G., Gronenberg, O., Kolhatkar, G., Kohlstedt, H., & Ziegler, M. (2023) · Advanced Electronic Materials · doi:10.1002/aelm.202201227 · Cited by 25

Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing

Huang, C.-H., Weng, C.-Y., Chen, K., Chou, Y., Wu, T., & Chou, Y. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.3c03002 · Cited by 24

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO 2 /Al memory

Shao, X. L., Kim, K. M., Yoon, K. J., Song, S. J., Yoon, J. H., Kim, H. J., Park, T. H., Kwon, D. E., Kwon, Y. J., Kim, Y. M., et al. (2016) · Nanoscale · doi:10.1039/c6nr02800d · Cited by 24

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

Ma, H., Feng, J., Lv, H., Gao, T., Xu, X., Luo, Q., Gong, T., & Yuan, P. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-017-1905-3 · Cited by 24

Imaging Dielectric Breakdown in Valence Change Memory

Hubbard, W. A., Lodico, J. J., Chan, H. L., Mecklenburg, M. H., & Regan, B. C. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202102313 · Cited by 23

Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Lee, H., Han, W., Chung, H. Y., Rozenberg, M. J., Kim, K., Lee, Z., Yeom, G. Y., & Park, H. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b06117 · Cited by 23

Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure

Son, J., Lee, M., Sannyal, A., Yun, H., Cheon, J., Lee, S., Park, J. S., Kang, S. J., Jang, J., & Jeong, B. (2025) · ACS Nano · doi:10.1021/acsnano.4c07869 · Cited by 23

Interface engineering for enhancement of the analog properties of W/WO 3− x /HfO 2 /Pd resistance switched structures

Koroleva, A. A., Kozodaev, M. G., Lebedinskiǐ, Y. Y., & Markeev, A. M. (2021) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ac26f6 · Cited by 23

Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application

Pal, P., Lee, K.-J., Thunder, S., De, S., Huang, P.-T., Kämpfe, T., & Wang, Y. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3186965 · Cited by 22

Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure

Park, T., Kim, S. S., Lee, B. J., Park, T. W., Kim, H. J., & Hwang, C. S. (2023) · Nanoscale · doi:10.1039/d3nr00271c · Cited by 22

Role of ITO electrode in the resistive switching behavior of TiN/HfO 2 /ITO memory devices at different annealing temperatures

Ye, C., Deng, T.-F., Wu, J., Zhan, C., Wang, H., & Zhang, J. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.054201 · Cited by 22

Structure and optical properties of polycrystalline NiO films and its resistive switching behavior in Au/NiO/Pt structures

Lai, J. C., Wang, X., Mi, W., Ding, Y., & Yang, B. (2015) · Physica B Condensed Matter · doi:10.1016/j.physb.2015.09.001 · Cited by 22

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films

Giri, A., Kumar, M., Kim, J., Pal, M., Banerjee, W., Nikam, R. D., Kwak, J., Kong, M., Kim, S. H., Thiyagarajan, K., et al. (2021) · Advanced Materials · doi:10.1002/adma.202102252 · Cited by 21

Bio-synapse behavior controlled by interface engineering in ferroelectric tunnel memristors

Zhao, J., Yu, T., Shao, Y., Guo, R., Lin, W., Liu, G., Zhou, Z., Pei, Y., Wang, J., Sun, K., et al. (2022) · Science China Materials · doi:10.1007/s40843-022-2275-7 · Cited by 21

Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5resistance switching layer

Park, T. H., Song, S. J., Kim, H. J., Kim, S. G., Chung, S., Kim, B. Y., Lee, K. J., Kim, K. M., Choi, B. J., & Hwang, C. S. (2015) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201510110 · Cited by 21

HfO2-based memristor-CMOS hybrid implementation of artificial neuron model

Zhang, Y., Fang, Z., & Yan, X. (2022) · Applied Physics Letters · doi:10.1063/5.0091286 · Cited by 20

Bio‐Voltage Memristors: From Physical Mechanisms to Neuromorphic Interfaces

Wang, S., Wang, R., Cao, Y., Ma, X., Wang, H., & Hao, Y. (2023) · Advanced Electronic Materials · doi:10.1002/aelm.202200972 · Cited by 21

Research on Pt/NiOx/WO3–x:Ti/W Multijunction Memristors with Synaptic Learning and Memory Functions

Zhang, H., Cheng, C., Huang, B., Zhang, H., Chen, R., Huang, Y., Chen, H., & Pei, W. (2021) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.1c00704 · Cited by 20

Engineering Method for Tailoring Electrical Characteristics in TiN/TiOx/HfOx/Au Bi-Layer Oxide Memristive Devices

Park, S., Klett, S., Ivanov, T., Knauer, A., Döll, J., & Ziegler, M. (2021) · Frontiers in Nanotechnology · doi:10.3389/fnano.2021.670762 · Cited by 20

Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis

Lee, Y., Rhee, H., Kim, G., Cheong, W. H., Kim, D. H., Song, H., Kay, S. N., Lee, J., & Kim, K. M. (2025) · Nature Communications · doi:10.1038/s41467-025-59589-2 · Cited by 19

Designed Memristor Circuit for Self‐Limited Analog Switching and its Application to a Memristive Neural Network

Song, H., Kim, Y. S., Park, J., & Kim, K. M. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800740 · Cited by 18

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Sung, S. H., Kim, D. H., Kim, T., Kang, I., & Lee, K. J. (2019) · Advanced Materials Technologies · doi:10.1002/admt.201900080 · Cited by 19

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

Samanta, S., Gong, X., Zhang, P., Han, K., & Fong, X. (2019) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2019.07.050 · Cited by 19

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta 2 O 5 /Al 2 O 3 /TiN Memristors

Park, T. W., Moon, J., Shin, D. H., Kim, H. J., Kim, S. S., Cho, J. M., Park, H., Woo, K. S., Kim, D. Y., Cheong, S., et al. (2024) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.4c15598 · Cited by 18

A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO 2 single layer

Park, M. H., Jeong, J. H., Kim, W., Park, S. H., Lim, B. M., Lee, H., & Kang, S. J. (2024) · Journal of Materials Chemistry C · doi:10.1039/d4tc00227j · Cited by 18

Analog‐Digital Hybridity of Resistive Switching in Ion‐Irradiated BiFeO 3 Memristor for Synergistic Neuromorphic Functionality and Artificial Learning

Roy, S., Sahu, M. C., Jena, A. K., Mallik, S. K., Padhan, R., Mohanty, J. R., & Sahoo, S. (2024) · Advanced Materials Technologies · doi:10.1002/admt.202400557 · Cited by 18

Solution-processed metal oxide dielectric films: Progress and outlook

Lee, W., Kwak, T., Choi, J., Park, S., & Yoon, M. (2021) · APL Materials · doi:10.1063/5.0066014 · Cited by 17

Improvement of Rectification Characteristics of TaOx/Al2O3 Memristors by Oxygen Anion Migration and Barrier Modulation

Ma, Z., Wang, F., Shan, X., Lin, X., Zhang, Y., Guo, X., Liu, W., Han, Y., Zhao, X., Song, Z., et al. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3268253 · Cited by 17

Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

Prakash, C., & Dixit, A. (2023) · Journal of Applied Physics · doi:10.1063/5.0155463 · Cited by 17

Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure

Deng, Y., Xu, X., Xu, Z., Wang, M., Liu, Q., Ma, Y., Chen, J., Meng, K., Wu, Y., Miao, J., et al. (2021) · Ceramics International · doi:10.1016/j.ceramint.2021.11.005 · Cited by 17

Ti-Doped GaOxResistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

Park, J. H., Jeon, D. S., & Kim, T. G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b10266 · Cited by 17

Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks

Kim, Y., Kim, J., Kim, S. S., Kwon, Y. J., Kim, G. S., Jeon, J. W., Kwon, D. E., Yoon, J. H., & Hwang, C. S. (2019) · Advanced Intelligent Systems · doi:10.1002/aisy.201900116 · Cited by 18

Concealable physical unclonable function generation and an in-memory encryption machine using vertical self-rectifying memristors

Cho, J. M., Kim, S., Park, T. W., Shin, D. H., Kim, Y. R., Park, H., Kim, D. Y., Lee, S. H., Park, T., & Hwang, C. S. (2024) · Nanoscale Horizons · doi:10.1039/d4nh00420e · Cited by 17

Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process

Jo, Y., Jung, K., Kim, J., Woo, H., Han, J., Kim, H., Hong, J. P., Lee, J.-K., & Im, H. (2014) · Scientific Reports · doi:10.1038/srep07354 · Cited by 16

Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Go, S., Lim, K.-G., Lee, T., & Loke, D. K. (2024) · Small Science · doi:10.1002/smsc.202300139 · Cited by 15

Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory

Lee, H., & Park, H. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b03780 · Cited by 16

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application

Sun, Z., Wei, L., Feng, C., Miao, P., Guo, M., Yang, H., Li, J., & Zhao, Y. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201600361 · Cited by 16

High-performance CMOS-compatible self-rectifying memristor for passive array integration

Wang, Z., Zhang, G., Li, P., Xing, S., Wang, Z., Fan, X., Sun, J., Gao, D., Wan, Q., & Zhang, Y. (2024) · Physical Review Applied · doi:10.1103/physrevapplied.22.064003 · Cited by 15

Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application

Pal, P., Mazumder, S., Huang, C.-W., Lu, D. D., & Wang, Y. (2022) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.1c01219 · Cited by 15

Memristive Explainable Artificial Intelligence Hardware

Song, H., Park, W., Kim, G., Choi, M. G., In, J. H., Rhee, H., & Kim, K. M. (2024) · Advanced Materials · doi:10.1002/adma.202400977 · Cited by 16

Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

Yuan, X.-C., Wei, X., Dai, B., & Zeng, H. (2015) · Applied Surface Science · doi:10.1016/j.apsusc.2015.11.159 · Cited by 15

Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device

Yun, S., Park, J., Kang, M., & Kim, S. (2022) · Results in Physics · doi:10.1016/j.rinp.2022.105307 · Cited by 15

Comparative analysis of two-terminal memristors, three-terminal transistors, and their integration in neuromorphic computing

Ghazanfar, H., Rabeel, M., Kim, H., Nisar, S., Tahir, M. S., Ahmad, M., Zulfiqar, M. W., Imran, M., Dastgeer, G., & Kim, D. (2025) · Materials Today Physics · doi:10.1016/j.mtphys.2025.101929 · Cited by 15

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

Kim, S. S., Yong, S. K., Kim, J., Choi, J. M., Park, T. W., Kim, H. Y., Kim, H. J., & Hwang, C. S. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200998 · Cited by 14

Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM

Senapati, A., Roy, S., Lin, Y., Dutta, M., & Maikap, S. (2020) · Electronics · doi:10.3390/electronics9071106 · Cited by 14

Redox memristors with volatile threshold switching behavior for neuromorphic computing

Wang, Y., Gong, T., Ding, Y., Li, Y., Wang, W. J., Chen, Z., Du, N., Covi, E., Farronato, M., Ielmini, D., et al. (2022) · Journal of Electronic Science and Technology · doi:10.1016/j.jnlest.2022.100177 · Cited by 14

Sensory gating in bilayer amorphous carbon memristors

Raeber, T. J., Barlow, A. J., Zhao, Z. C., McKenzie, D. R., Partridge, J. G., McCulloch, D. G., & Murdoch, B. J. (2018) · Nanoscale · doi:10.1039/c8nr05328f · Cited by 13

Resistive switching memories

Brivio, S., & Menzel, S. (2020) · Elsevier eBooks · doi:10.1016/b978-0-08-102782-0.00002-2 · Cited by 6

Memristive devices based on Cu-doped NbO films with large self-rectifying ratio

Huang, J., Huang, H.-M., Xiao, Y., Wang, T., & Guo, X. (2021) · Solid State Ionics · doi:10.1016/j.ssi.2021.115732 · Cited by 13

Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Zahari, F., Marquardt, R., Kalläne, M., Gronenberg, O., Schlueter, C., Matveyev, Y., Haberfehlner, G., Diekmann, F., Nierhauve, A., Buck, J., et al. (2023) · Advanced Electronic Materials · doi:10.1002/aelm.202201226 · Cited by 12

Site‐Specific Emulation of Neuronal Synaptic Behavior in Au Nanoparticle‐Decorated Self‐Organized TiOx Surface

Hasina, D., Saini, M. K., Kumar, M., Mandal, A., Basu, N., Maiti, P., Srivastava, S. K., & Som, T. (2023) · Small · doi:10.1002/smll.202305605 · Cited by 12

2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping

Shim, S. K., Jang, Y. H., Han, J., Jeon, J. W., Shin, D. H., Kim, Y. R., Han, J., Woo, K. S., Lee, S. H., Cheong, S., et al. (2024) · Small · doi:10.1002/smll.202306585 · Cited by 11

Memristive Crossbar Array‐Based Probabilistic Graph Modeling

Jang, Y. H., Lee, S. H., Han, J., Cheong, S., Shim, S. K., Han, J., Ryoo, S. K., & Hwang, C. S. (2024) · Advanced Materials · doi:10.1002/adma.202403904 · Cited by 12

Pt/ZrOx/Al2O3/TiN self-rectifying memristor crossbar array based on synergistic effect of interface barrier modulation and oxygen vacancy migration

Chen, X., Wang, F., Lin, X., Li, Z., Du, H., Luo, Y., Sun, P., Wang, Y., Han, Y., Zheng, L., et al. (2025) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2025.178794 · Cited by 12

Switching-behavior improvement in HfO 2 /ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics

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Cross‐Wired Memristive Crossbar Array for Effective Graph Data Analysis

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