The DOI matches its Crossref record, with a small difference in title or year; 1 of the 1 references it cites were found in a registry or an index.
Thermal conductivity of isotopically pure and Ge-doped Si epitaxial layers from 300 to 550 K
Abstract
The thermal conductivity of epitaxial layers of Si is measured in the temperature range $300<T<550\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ using time-domain thermoreflectance. The analysis of the thermoreflectance data uses the ratio of the in-phase and out-of-phase signals of the lock-in amplifier to achieve a precision of $\ifmmode\pm\else\textpm\fi{}5%$. Comparisons are made between epitaxial layers of isotopically pure $^{28}\mathrm{Si}$, Si with a natural isotope abundance, and Ge-doped Si. At $297\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, the thermal conductivity of $^{28}\mathrm{Si}$ epitaxial films is $16\ifmmode\pm\else\textpm\fi{}5\phantom{\rule{0.2em}{0ex}}%$ larger than the thermal conductivity of natural Si. The thermal resistance created by mass-disorder scattering of phonons is in good agreement with theory for natural Si and for Ge-doped Si with a Ge concentration of $1.4\ifmmode\times\else\texttimes\fi{}{10}^{19}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$.
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When FDTR is implemented using CW lasers, the thermoreflectance signal is directly proportional to the single frequency response H(ω0).
“When an FDTR system is implemented using CW lasers, the thermoreflectance signal is instead directly proportional to single frequency response 𝐻(𝜔 0 ) [97,113,114]:”
From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [114]
Citations
Cites
Thermal conductance of epitaxial interfaces
Costescu, R. M., Wall, M. A., & Cahill, D. G. (2003) · Physical Review B · doi:10.1103/physrevb.67.054302 · Cited by 486
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A frequency-domain thermoreflectance method for the characterization of thermal properties
Schmidt, A. J., Cheaito, R., & Chiesa, M. (2009) · Review of Scientific Instruments · doi:10.1063/1.3212673 · Cited by 543
Thermal conductance of metal-metal interfaces
Gundrum, B. C., Cahill, D. G., & Averback, R. S. (2005) · Physical Review B · doi:10.1103/physrevb.72.245426 · Cited by 417
Self-citationThermal conductivity of GaN, GaN71 , and SiC from 150 K to 850 K
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.014601 · Cited by 177
Self-citationLiu, J., Zhu, J., Tian, M., Gu, X., Schmidt, A., & Yang, R. (2013) · Review of Scientific Instruments · doi:10.1063/1.4797479 · Cited by 163
Ultralow thermal conductivity of fullerene derivatives
Wang, X., Liman, C. D., Treat, N. D., Chabinyc, M. L., & Cahill, D. G. (2013) · Physical Review B · doi:10.1103/physrevb.88.075310 · Cited by 132
Self-citationZheng, X., Cahill, D. G., Krasnochtchekov, P., Averback, R. S., & Zhao, J.-C. (2007) · Acta Materialia · doi:10.1016/j.actamat.2007.05.037 · Cited by 117
Self-citationThermal conductivity of epitaxial layers of dilute SiGe alloys
Cahill, D. G., Watanabe, F., Rockett, A., & Vining, C. B. (2005) · Physical Review B · doi:10.1103/physrevb.71.235202 · Cited by 67
Self-citationEnglish, T. S., Phinney, L. M., Hopkins, P. E., & Serrano, J. R. (2013) · Journal of Heat Transfer · doi:10.1115/1.4024357 · Cited by 14
Metadata
- Authors
- Cahill, D. G., & Watanabe, F.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2004-12-17
- Volume
- 70
- Issue
- 23
- ISSN
- 1098-0121
- 1550-235X
- Cited by
- 89
- References
- 1
- Language
- en
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