A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices
Open accessAbstract
This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Representative temperature-sensitive electrical parameters include VDS(on), threshold voltage, drain leakage current, dI/dt, and gate current.
“Representative TSEPs include V DS ( on ) , threshold voltage ( V th ), drain leakage current ( I dss ), dI / dt , and gate current ( I gp); these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
The TSEP methods section (page unavailable) identifies threshold voltage and current slew rate (dIce/dt or dIds/dt) as TSEPs. The copy does not identify VDS(on), drain leakage current, or gate current as TSEPs; it discusses leakage current under high humidity and gate current after dielectric breakdown instead. Thus it does not support the full list or the assertion that all five parameters reflect accumulated thermal stress. (LLM, conf=0.87)
Experimental — accuracy not yet measuredThese temperature-sensitive electrical parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies.
“these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
The sections on tests to verify condition-monitoring methods and the Conclusion (page numbers unavailable) say that changes in failure-precursor parameters reveal aging and can guide maintenance scheduling. The junction-temperature section cautions that electrical indicators such as VCE are also sensitive to current temperature and must be compared at a fixed temperature. The copy therefore supports their use in condition-based maintenance, but does not establish that these parameters specifically reflect accumulated thermal stress. (LLM, conf=0.83)
Experimental — accuracy not yet measureddI/dt and gate current are commonly used in SiC MOSFETs.
“while dI / dt and I gp are commonly used in SiC MOSFETs [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
The Dielectric Breakdown section (page unavailable) says gate current can increase in a MOSFET after breakdown, but does not say gate current is commonly used in SiC MOSFETs. Searches for dI/dt, gate current, and current rate of change found no passage addressing their common use in SiC MOSFETs. (LLM, conf=0.72)
Experimental — accuracy not yet measured
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Cites
A Study of the Effects of Cyclic Thermal Stresses on a Ductile Metal
Coffin, L. F. (1954) · Transactions of the American Society of Mechanical Engineers · doi:10.1115/1.4015020 · Cited by 2,241 · see citing works
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278 · see citing works
Behavior of materials under conditions of thermal stress
Manson, S. S. (1953) · NASA STI Repository (National Aeronautics and Space Administration) · Cited by 1,230 · see citing works
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039 · see citing works
Survey on Reliability of Power Electronic Systems
Song, Y., & Wang, B. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2192503 · Cited by 867 · see citing works
Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics
Wang, H., Liserre, M., Blaabjerg, F., de Place Rimmen, P., Jacobsen, J. B., Kvisgaard, T., & Landkildehus, J. (2014) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2013.2290282 · Cited by 693 · see citing works
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Smet, V., Forest, F., Huselstein, J.-J., Richardeau, F., Khatir, Z., Lefebvre, S., & Berkani, M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2011.2114313 · Cited by 620 · see citing works
Fast power cycling test of IGBT modules in traction application
Held, M., Jacob, P., Nicoletti, G. J., Scacco, P., & Poech, M. (2002) · IEEE International Conference on Power Electronics and Drive Systems (PEDS) · doi:10.1109/peds.1997.618742 · Cited by 587 · see citing works
Solder joint fatigue models: review and applicability to chip scale packages
Lee, W. W., Nguyen, L. T., & Selvaduray, G. S. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(99)00061-x · Cited by 525 · see citing works
Reliability of Controlled Collapse Interconnections
Norris, K. C., & Landzberg, A. H. (1969) · IBM Journal of Research and Development · doi:10.1147/rd.133.0266 · Cited by 500 · see citing works
Dielectric breakdown mechanisms in gate oxides
Lombardo, S. A., Stathis, J. H., Linder, B. P., Pey, K. L., Palumbo, F., & Tung, C. (2005) · Journal of Applied Physics · doi:10.1063/1.2147714 · Cited by 456 · see citing works
A Lifetime Estimation Technique for Voltage Source Inverters
Huang, H. F., & Mawby, P. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2229472 · Cited by 396 · see citing works
Reliability engineering and system safety
(1988) · Reliability Engineering & System Safety · doi:10.1016/0951-8320(88)90007-5 · Cited by 339 · see citing works
Solomon, H. D. (1986) · IEEE Transactions on Components Hybrids and Manufacturing Technology · doi:10.1109/tchmt.1986.1136672 · Cited by 300 · see citing works
An Efficient Implementation of the Rainflow Counting Algorithm for Life Consumption Estimation
Musallam, M., & Johnson, C. M. (2012) · IEEE Transactions on Reliability · doi:10.1109/tr.2012.2221040 · Cited by 261 · see citing works
Development of a Methodology for Improving Photovoltaic Inverter Reliability
Ristow, A., Begovic, M. M., Pregelj, A., & Rohatgi, A. (2008) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2008.924017 · Cited by 250 · see citing works
Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation
Nguyen, T.-T., Ahmed, A., Thang, T. V., & Park, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2353417 · Cited by 249 · see citing works
Smet, V., Forest, F., Huselstein, J.-J., Rashed, A., & Richardeau, F. (2013) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2012.2196894 · Cited by 232 · see citing works
Xiong, Y., Cheng, X., Shen, Z. J., Mi, C. C., Wu, H., & Garg, V. K. (2008) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2008.918399 · Cited by 226 · see citing works
Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
Patil, N., Celaya, J. ́. R., Das, D., Goebel, K., & PECHT, M. G. (2009) · IEEE Transactions on Reliability · doi:10.1109/tr.2009.2020134 · Cited by 222 · see citing works
Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules
Choi, U.-M., Joergensen, S., & Blaabjerg, F. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2521899 · Cited by 200 · see citing works
A dynamic electro-thermal model for the IGBT
Hefner, A. R. (1994) · IEEE Transactions on Industry Applications · doi:10.1109/28.287517 · Cited by 198 · see citing works
Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise
Xiang, D., Ran, L., Tavner, P., Bryant, A. T., Yang, S., & Mawby, P. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2011.2168556 · Cited by 193 · see citing works
Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
Chen, H., Ji, B., Pickert, V., & Cao, W. (2014) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2013.2292547 · Cited by 192 · see citing works
Yang, L., Agyakwa, P. A., & Johnson, C. M. (2012) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2012.2235836 · Cited by 186 · see citing works
Stroe, D.-I., Swierczynski, M., Stan, A.-I., Teodorescu, R., & Andreasen, S. J. (2014) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2014.2321028 · Cited by 176 · see citing works
Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification
Xiang, D., Ran, L., Tavner, P., Yang, S., Bryant, A. T., & Mawby, P. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2160988 · Cited by 174 · see citing works
Düşmez, S., Duran, H., & Akin, B. (2016) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2016.2518127 · Cited by 167 · see citing works
Void-induced thermal impedance in power semiconductor modules: Some transient temperature effects
Katsis, D. C., & van Wyk, J. D. (2003) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2003.816527 · Cited by 156 · see citing works
Thermal component model for electrothermal analysis of IGBT module systems
Yun, C.-S., Malberti, P., Ciappa, M., & Fichtner, W. (2001) · IEEE Transactions on Advanced Packaging · doi:10.1109/6040.938309 · Cited by 153 · see citing works
The history of reliability prediction
Denson, W. K. (1998) · IEEE Transactions on Reliability · doi:10.1109/24.740547 · Cited by 150 · see citing works
Ciappa, M., Carbognani, F., & Fïchtner, W. (2003) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2003.818148 · Cited by 149 · see citing works
Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current
Zhou, S., Zhou, L., & Sun, P. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2210249 · Cited by 149 · see citing works
Reliability Estimation of Three Single-Phase Topologies in Grid-Connected PV Systems
Chan, F., & Calleja, H. (2010) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2060459 · Cited by 141 · see citing works
Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
Lai, W., Chen, M., Ran, L., Alatise, O. M., Xu, S., & Mawby, P. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2501540 · Cited by 134 · see citing works
A thermal model for insulated gate bipolar transistor module
Luo, Z., Ahn, H., & Nokali, M. A. E. (2004) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2004.830089 · Cited by 131 · see citing works
Makdessi, M., Sarı, A., Venet, P., Bevilacqua, P., & Joubert, C. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2351274 · Cited by 130 · see citing works
Turn-Off Time as an Early Indicator of Insulated Gate Bipolar Transistor Latch-up
Brown, D. W., Abbas, M., Ginart, A. E., Ali, I., Kalgren, P. W., & Vachtsevanos, G. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2159848 · Cited by 129 · see citing works
Sonnenfeld, G., Goebel, K., & Celaya, J. ́. R. (2008) · Conference record (1995) - Autotestcon/Conference record - Autotestcon · doi:10.1109/autest.2008.4662613 · Cited by 120 · see citing works
Düşmez, S., Ali, S. H., Heydarzadeh, M., Kamath, A. S., Duran, H., & Akin, B. (2016) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2016.2603144 · Cited by 113 · see citing works
Towards prognostics for electronics components
Saha, B., Celaya, J. ́. R., Wysocki, P. F., & Goebel, K. (2009) · IEEE Aerospace Conference (AERO) · doi:10.1109/aero.2009.4839676 · Cited by 111 · see citing works
Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter
Brckner, T., & Bernet, S. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2006.886651 · Cited by 111 · see citing works
Aldaco, S. E. D. L., Calleja, H., Chan, F., & Jiménez-Grajales, H. R. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2222673 · Cited by 109 · see citing works
Hamidi, A., Beck, N., Thomas, K., & Herr, E. (1999) · Microelectronics Reliability · doi:10.1016/s0026-2714(99)00164-x · Cited by 106 · see citing works
Perpiñà, X., Servière, J. F., Saiz, J., Barlini, D., Mermet-Guyennet, M., & Millán, J. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.078 · Cited by 104 · see citing works
A prognostic approach for non-punch through and field stop IGBTs
Patil, N., Das, D., & PECHT, M. G. (2011) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.10.017 · Cited by 98 · see citing works
IGBT module with user accessible on-chip current and temperature sensors
Motto, E. R., & Donlon, J. F. (2012) · 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec.2012.6165816 · Cited by 92 · see citing works
Barlini, D., Ciappa, M., Castellazzi, A., Mermet-Guyennet, M., & Fichtner, W. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.058 · Cited by 92 · see citing works
Uno, M., & Kukita, A. (2015) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2015.2504578 · Cited by 88 · see citing works
Condition Monitoring of Power Electronic Circuits Using Artificial Neural Networks
Mohagheghi, S., Harley, R. G., Habetler, T. G., & Divan, D. M. (2009) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2009.2017806 · Cited by 87 · see citing works
Accelerated aging system for prognostics of power semiconductor devices
Celaya, J. ́. R., Wysocki, P. F., Vashchenko, V. A., Saha, S., & Goebel, K. (2010) · IEEE AUTOTESTCON (IEEE Systems Readiness Technology Conference) · doi:10.1109/autest.2010.5613564 · Cited by 84 · see citing works
Accelerated aging with electrical overstress and prognostics for power MOSFETs
Saha, S., Celaya, J. ́. R., Vashchenko, V. A., Mahiuddin, S. S., & Goebel, K. (2011) · IEEE Energytech · doi:10.1109/energytech.2011.5948532 · Cited by 84 · see citing works
Berkani, M., Khatir, Z., Ousten, J.-P., Badel, F., Dupont, L., & Lefebvre, S. (2007) · Microelectronics Reliability · doi:10.1016/j.microrel.2007.07.027 · Cited by 83 · see citing works
Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors
Astigarraga, D., Ibáñez, F. M., Galarza, A., Echeverría, J. M., Unanue, I., Baraldi, P., & Zio, E. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2512923 · Cited by 80 · see citing works
Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics
Alghassi, A., Perinpanayagam, S., Samie, M., & Sreenuch, T. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2360662 · Cited by 78 · see citing works
Thebaud, J.-M., Woirgard, E., Zardini, C., Azzopardi, S., Briat, O., & Vinassa, J.-M. (2003) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2003.815112 · Cited by 73 · see citing works
An accelerated thermal aging platform to monitor fault precursor on-state resistance
Düşmez, S., & Akin, B. (2015) · IEEE International Electric Machines & Drives Conference (IEMDC) · doi:10.1109/iemdc.2015.7409238 · Cited by 73 · see citing works
Advanced IGBT modules for railway traction applications: Reliability testing
Berg, H., & Wolfgang, E. (1998) · Microelectronics Reliability · doi:10.1016/s0026-2714(98)00150-4 · Cited by 71 · see citing works
Acceleration Factors for Lead-Free Solder Materials
Salmela, O. (2007) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2007.900076 · Cited by 70 · see citing works
Online Ringing Characterization as a Diagnostic Technique for IGBTs in Power Drives
Ginart, A. E., Brown, D. W., Kalgren, P. W., & Roemer, M. J. (2009) · IEEE Transactions on Instrumentation and Measurement · doi:10.1109/tim.2009.2013920 · Cited by 69 · see citing works
Automated Fast Extraction of Compact Thermal Models for Power Electronic Modules
Evans, P. L., Castellazzi, A., & Johnson, C. M. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2236687 · Cited by 65 · see citing works
Measurement of the transient junction temperature in MOSFET devices under operating conditions
Barlini, D., Ciappa, M., Mermet-Guyennet, M., & Fichtner, W. (2007) · Microelectronics Reliability · doi:10.1016/j.microrel.2007.07.008 · Cited by 64 · see citing works
Celaya, J. ́. R., Saxena, A., Saha, S., Vashchenko, V. A., & Goebel, K. (2011) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2011.5890815 · Cited by 54 · see citing works
Full SiC power module with advanced structure and its solar inverter application
Hinata, Y., Horio, M., Ikeda, Y., Yamada, R., & Takahashi, Y. (2013) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2013.6520272 · Cited by 54 · see citing works
Lifetime Prediction for Power Electronics Module Substrate Mount-down Solder Interconnect
Lu, H., Tilford, T., Bailey, C., & Newcombe, D. R. (2007) · International Symposium on High Density packaging and Microsystem Integration · doi:10.1109/hdp.2007.4283558 · Cited by 52 · see citing works
Pietranico, S., Lefebvre, S., Pommier, S., Berkani, M., & Bontemps, S. (2011) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.06.009 · Cited by 52 · see citing works
Quantifying Device Degradation in Live Power Converters Using SSTDR Assisted Impedance Matrix
Nasrin, M. S., Khan, F., & Alam, M. K. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2273556 · Cited by 51 · see citing works
Self-citationEnergy based methodology for damage and life prediction of solder joints under thermal cycling
Sarihan, V. (1994) · IEEE Transactions on Components Packaging and Manufacturing Technology Part B · doi:10.1109/96.338733 · Cited by 51 · see citing works
Investigation of the heel crack mechanism in Al connections for power electronics modules
Celnikier, Y., Benabou, L., Dupont, L., & Coquery, G. (2011) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.01.001 · Cited by 50 · see citing works
Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2013) · Annual Conference of the IEEE Industrial Electronics Society (IECON) · doi:10.1109/iecon.2013.6699260 · Cited by 50 · see citing works
Temperature-Level Effect on Solder Lifetime During Thermal Cycling of Power Modules
Berkani, M., Khatir, Z., Ousten, J.-P., & Lefebvre, S. (2008) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2008.2002354 · Cited by 48 · see citing works
Coquery, G., & Lallemand, R. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(00)00191-8 · Cited by 46 · see citing works
Thermal and Structural Simulation Techniques for Estimating Fatigue Life of an IGBT Module
Sasaki, K., Iwasa, N., Kurosu, T., Saito, K., Koike, Y., Kamita, Y., & Toyoda, Y. (2008) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2008.4538928 · Cited by 45 · see citing works
A Second-Level SAC Solder-Joint Fatigue-Life Prediction Methodology
Dauksher, W. (2008) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2007.912253 · Cited by 42 · see citing works
Novel wire bond material for advanced power module packages
Schmidt, R., König, C., & Prenosil, P. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.06.139 · Cited by 39 · see citing works
Senturk, O. S., Munk‐Nielsen, S., Teodorescu, R., Helle, L., & Rodríguez, P. (2011) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2011.6063820 · Cited by 39 · see citing works
Bielen, J. A., Gommans, J.-J., & Theunis, F. (2006) · doi:10.1109/esime.2006.1644022 · Cited by 38 · see citing works
Considerations for a Digital Gate Unit in high power applications
Kuhn, H., Koneke, T., & Mertens, A. (2008) · PESC record · doi:10.1109/pesc.2008.4592367 · Cited by 38 · see citing works
A Physics-of-failure based Prognostic Method for Power Modules
Yin, C., Lu, H., Musallam, M., Bailey, C., & Johnson, C. M. (2008) · IEEE Electronics Packaging Technology Conference (EPTC) · doi:10.1109/eptc.2008.4763591 · Cited by 36 · see citing works
Avenas, Y., & Dupont, L. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.03.032 · Cited by 35 · see citing works
Haumann, S., Rudzki, J., Osterwald, F., Becker, M., & Eisele, R. (2013) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2013.6520275 · Cited by 34 · see citing works
Physics of failure as a basis for solder elements reliability assessment in wind turbines
Kostandyan, E. E., & Sørensen, J. D. (2012) · Reliability Engineering & System Safety · doi:10.1016/j.ress.2012.06.020 · Cited by 34 · see citing works
Eleffendi, M. A., & Johnson, C. M. (2015) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2015.7309265 · Cited by 33 · see citing works
Thermal characteristics analysis of an IGBT using a fiber Bragg grating
Bazzo, J. P., Lukasievicz, T., Vogt, M., de Oliveira, V., Kalinowski, H. J., & da Silva, J. C. C. (2011) · Optics and Lasers in Engineering · doi:10.1016/j.optlaseng.2011.08.009 · Cited by 32 · see citing works
Energy-based methodology for the fatigue life prediction of solder materials
Vaynman, S., & McKeown, S. A. (1993) · IEEE Transactions on Components Hybrids and Manufacturing Technology · doi:10.1109/33.232059 · Cited by 32 · see citing works
Reliability evaluation of three-level inverters
Ding, Y., Loh, P. C., Tan, K. K., Wang, P., & Gao, F. (2010) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2010.5433438 · Cited by 31 · see citing works
Junction temperature measurement of IGBTs using short circuit current
Xu, Z., Wang, F., & Ning, P. (2012) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2012.6342837 · Cited by 29 · see citing works
Coquery, G., Carubelli, S., Ousten, J.-P., Lallemand, R., Lecoq, F., Lhotellier, D., de Viry, V., & Dupuy, P. (2001) · Microelectronics Reliability · doi:10.1016/s0026-2714(01)00197-4 · Cited by 29 · see citing works
A breakthrough in power electronics reliability — New die attach and wire bonding materials
Krebs, T., Duch, S., Schmitt, W., Koetter, S., Prenosil, P., & Thomas, S. (2013) · IEEE Electronic Components and Technology Conference (ECTC) · doi:10.1109/ectc.2013.6575811 · Cited by 27 · see citing works
Claassen, A., & Shaukatullah, H. (2002) · doi:10.1109/stherm.1997.566797 · Cited by 27 · see citing works
Musallam, M., Yin, C., Bailey, C., & Johnson, C. M. (2013) · Microelectronics Reliability · doi:10.1016/j.microrel.2013.08.017 · Cited by 27 · see citing works
Product Level Accelerated Reliability Testing of Motor Drives With Input Power Interruptions
Pippola, J., Vaalasranta, I., Marttila, T., Kiilunen, J., & Frisk, L. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2359734 · Cited by 27 · see citing works
Junction Temperature Prediction of IGBT Power Module Based on BP Neural Network
Wu, J., Zhou, L., Du, X., & Sun, P. (2014) · Journal of Electrical Engineering and Technology · doi:10.5370/jeet.2014.9.3.970 · Cited by 27 · see citing works
Ageing Test Results of low voltage MOSFET Modules for electrical vehicles
Dupont, L., Lefebvre, S., Berkani, M., Khatir, Z., Faugières, J. C., & Emorine, F. (2007) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2007.4417433 · Cited by 23 · see citing works
de Vega, A. R., Ghimire, P., Pedersen, K. B., Trintis, I., Bęczkowski, S., Munk‐Nielsen, S., Rannestad, B., & Thøgersen, P. (2014) · International Power Electronics Conference (IPEC) · doi:10.1109/ipec.2014.6869948 · Cited by 22 · see citing works
A Life Model for Supercapacitors
Williard, N., Baek, D.-C., Park, J. W., Choi, B.-O., Osterman, M. D., & PECHT, M. G. (2015) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2015.2479466 · Cited by 22 · see citing works
Reliability analysis and performance degradation of a Boost converter
Alam, M. K., & Khan, F. (2013) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2013.6647461 · Cited by 21 · see citing works
Self-citationLifetime extrapolation for IGBT modules under realistic operation conditions
Ciappa, M., Malberti, P., Fichtner, W., Cova, P., Cattani, L., & Fantini, F. (1999) · Microelectronics Reliability · doi:10.1016/s0026-2714(99)00160-2 · Cited by 20 · see citing works
Onboard condition monitoring of solder fatigue in IGBT power modules
Ji, B., Pickert, V., Cao, W., & Xing, L. (2013) · IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) · doi:10.1109/demped.2013.6645690 · Cited by 20 · see citing works
Online algorithm for early stage fault detection in IGBT switches
Anderson, J. M., Cox, R. W., & O'Connor, P. (2013) · IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives · doi:10.1109/demped.2013.6645689 · Cited by 19 · see citing works
Reliability of non-hermetic pressure contact IGBT modules
Schlegel, R., Herr, E., & Richter, F. (2001) · Microelectronics Reliability · doi:10.1016/s0026-2714(01)00193-7 · Cited by 16 · see citing works
A systematic design approach to thermal-electrical power electronics integration
Cottet, D., Drofenik, U., & Meyer, J.-M. (2008) · Electronics System-Integration Technology Conference (ESTC) · doi:10.1109/estc.2008.4684353 · Cited by 16 · see citing works
Potential of Digital Gate Units in High Power Applications
Kuhn, H., Koneke, T., & Mertens, A. (2008) · doi:10.1109/epepemc.2008.4635473 · Cited by 16 · see citing works
Predicting the Reliability of Power Electronic Modules
Bailey, C., Lu, H., & Tilford, T. (2007) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept.2007.4441543 · Cited by 15 · see citing works
Reliability of Wind Turbine components — Solder elements fatigue failure
Kostandyan, E. E., & Sørensen, J. D. (2012) · Proceedings, annual Reliability and Maintainability Symposium/Proceedings. Annual Reliability and Maintainability Symposium · doi:10.1109/rams.2012.6175420 · Cited by 15 · see citing works
Fault-tolerant topology of a grid-connected PV inverter coupled by a Scott transformer
Dat, M. T., Wijnhoven, T., & Driesen, J. (2012) · doi:10.1109/asscc.2012.6523306 · Cited by 14 · see citing works
On-line [TJ, Vce] Monitoring of IGBTs stressed by fast Power Cycling tests
Rashed, A., Huselstein, J.-J., Forest, F., Martiré, T., & Enrici, P. (2013) · HAL · Cited by 13 · see citing works
Study on case temperature distribution for condition monitoring of multidie IGBT modules
Tian, B., Wang, Z., & Qiao, W. (2014) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2014.6803664 · Cited by 13 · see citing works
Vaalasranta, I., Pippola, J., & Frisk, L. (2013) · IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives · doi:10.1109/demped.2013.6645691 · Cited by 13 · see citing works
Advanced power cycling test for power module with on-line on-state VCE measurement
Choi, U., Trintis, I., Blaabjerg, F., Jorgensen, S., & Svarre, M. L. (2015) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2015.7104765 · Cited by 13 · see citing works
Boattini, F., & Genton, C.-M. (2015) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2015.7309424 · Cited by 12 · see citing works
Numerical and experimental results correlation during power MOSFET ageing
Azoui, T., Tounsi, P., Dupuy, P., Dorkel, J. M., & Martineau, D. (2012) · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · doi:10.1109/esime.2012.6191798 · Cited by 12 · see citing works
Study of Degradation in Switching Mode Power Supply Based on the Theory of PoF
Li, D., & Li, X. (2012) · International Conference on Computer Science and Service System · doi:10.1109/csss.2012.493 · Cited by 12 · see citing works
SEM investigation on IGBT latch-up failure
Wu, W., Fan, C., Wang, Y., Wang, Y., Cui, X., Jacob, P., & Held, M. (2005) · IEEE International Conference on Solid-State and Integrated Circuit Technology · doi:10.1109/icsict.2001.982074 · Cited by 11 · see citing works
Power cycling test bench for IGBT power modules used in wind applications
Wagenitz, D., Westerholz, A., Erdmann, E., Hambrecht, A., & Dieckerhoff, S. (2011) · European Conference on Power Electronics and Applications · Cited by 11 · see citing works
Long term reliability testing of HV-IGBT modules in worst case traction operation
Fratelli, L., Cascone, B., Glannini, G., & Busatto, G. (1999) · Microelectronics Reliability · doi:10.1016/s0026-2714(99)00161-4 · Cited by 11 · see citing works
Benbahouche, L., Merabet, A., & Zegadi, A. (2012) · International Conference on Microwaves, Radar & Wireless Communications · doi:10.1109/mikon.2012.6233539 · Cited by 11 · see citing works
A fault-tolerant switching scheme for a photovoltaic high-frequency-link inverter
Tajfar, A., & Mazumder, S. K. (2012) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2012.6166109 · Cited by 10 · see citing works
Self-Healing Control with Multifunctional Gate Drive Circuits for Power Converters
Xiao, P., Venayagamoorthy, G. K., Corzine, K. A., & Woodley, R. S. (2007) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/07ias.2007.282 · Cited by 9 · see citing works
A fault tolerant dual inverter configuration for islanded mode photovoltaic generation system
Madhukar Rao, A., Umesh, B. S., & Keerthipati, S. (2013) · International Future Energy Electronics Conference (IFEEC) · doi:10.1109/ifeec.2013.6687614 · Cited by 7 · see citing works
System-level reliability testing a frequency converter with simultaneous stresses
Kiilunen, J., & Frisk, L. (2011) · IET Power Electronics · doi:10.1049/iet-pel.2010.0239 · Cited by 7 · see citing works
Tlig, M., Slama, J. B. H., & Belaïd, M. A. (2014) · International Conference on Electrical Sciences and Technologies in Maghreb · doi:10.1109/cistem.2014.7076991 · Cited by 6 · see citing works
Reduced Order Electro-Thermal Models for Real-Time Health Management of Power Electronics
Musallam, M., Buttay, C., Johnson, C. M., Bailey, C., & Whitehead, M. (2007) · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · doi:10.1109/esime.2007.360058 · Cited by 5 · see citing works
IGBT condition monitoring with system identification methods
Wang, C., Ji, B., Song, X., Pickert, V., & Cao, W. (2014) · IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) · doi:10.1109/itec-ap.2014.6941216 · Cited by 5 · see citing works
Huang, X., Wu, W., & Chou, P.-L. (2012) · International Conference on Electronic Materials and Packaging · doi:10.1109/emap.2012.6507914 · Cited by 5 · see citing works
Bachti, S., Dupont, L., Loudot, S., & Coquery, G. (2013) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2013.6634415 · Cited by 4 · see citing works
Influences of DBC metal layout on the reliability of IGBT power modules
Tian, T., Liang, L., Xin, W., & Luo, F. L. (2015) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2015.7369299 · Cited by 4 · see citing works
Real time, on line, age calculation of IGBT power modules
James, P. A., & Forsyth, A. J. (2010) · IET International Conference on Power Electronics, Machines and Drives (PEMD) · doi:10.1049/cp.2010.0122 · Cited by 1 · see citing works
(2008)
Flagged first, then by citations
4 of the 133 references couldn’t be matched to a known paper.
Research works printed but not linked: 9
- [30]30. Prabjit Singh, "Power MOSFET Failure Mechanisms, Telecommunications Energy Conference," 26th Annual International Telecommunications Energy Conference (INTELEC), pp. 499-502, 19- 23 Sept. 2004.
- [36]36. Nathan Valentine, Dr. Diganta Das, and Prof. Michael Pecht, "Failure Mechanisms of Insulated Gate Bipolar Transistors (IGBTs)", 2015 NREL Photovoltaic Reliability Workshop, https://www.nrel.gov/pv/assets/pdfs/2015_pvmrw_131_das.pdf.
- [67]67. Standard Practices for Cycle Counting in Fatigue Analysis, Annual Book of ASTM Standards, ASTME 1049-85 (Reapproved 1997), 1999, vol. 03.01, Philadelphia, USA.
- [81]81. Choi, Ui-Min, Soeren Joergensen, and Frede Blaabjerg. "Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules." IEEE Transactions on Power Electronics, 31(12), 8371-8376.
- [87]87. Yanick Lobsiger and Johann W. Kolar, "Voltage, Current and Temperature Measurement Concepts Enabling Intelligent Gate Drives," Presented at ECPE Workshop Munich Electronics around the power switch: Gate drives, sensors and control, 2011. [Online]. Available at https://www.pes.ee.ethz.ch/uploads/tx_ethpublications/Lobsiger_Mea surement_Concepts_ECPE_WS_2011.pdf
- [93]93. Power Semiconductor Reliability Handbook, ALPHA & OMEGA SEMICONDUCTOR, Sunnyvale, CA, 2010. pp. 8-10. [Online]. Available http://www.aosmd.com/media/reliability-handbook.pdf
- [96]96. IGBT Module Reliability Application Note, pp. 4-6, [Online]. Availablehttp://www.dynexpowersemiconductors.com/media/d/n/dnx _an5945.pdf
- [98]98. Power Module Reliability-Mitsubishi Electric, pp. 11-13, [Online]. Available: http://www.mitsubishielectric.com/semiconductors/products/pdf/relia bility/0512_e.pdf
- [130]130. Uwe Scheuermann, "Chip Temperature Measurement without Additional Sensors," Bodo's Power Systems, pp. 58-59, [Online]. Available:http://www.semikron.com/skcompub/en/Chip_Temperature _Measurement.pdf
Cited by
Sorted by citations
An Overview of Artificial Intelligence Applications for Power Electronics
Zhao, S., Blaabjerg, F., & Wang, H. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024914 · Cited by 947 · see citing works
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261 · see citing works
A Review on IGBT Module Failure Modes and Lifetime Testing
Abuelnaga, A. H., Narimani, M., & Bahman, A. S. (2021) · IEEE Access · doi:10.1109/access.2021.3049738 · Cited by 247 · see citing works
A Fault-Tolerant Hybrid Cascaded H-Bridge Multilevel Inverter
Mhiesan, H. G., Wei, Y., Siwakoti, Y. P., & Mantooth, H. A. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.2996097 · Cited by 130 · see citing works
Wide bandgap semiconductor-based integrated circuits
Yuvaraja, S., Khandelwal, V., Tang, X. L., & Li, X. (2023) · Chip · doi:10.1016/j.chip.2023.100072 · Cited by 130 · see citing works
Mission Profile-Oriented Control for Reliability and Lifetime of Photovoltaic Inverters
Sangwongwanich, A., Yang, Y., Séra, D., & Blaabjerg, F. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2947227 · Cited by 105 · see citing works
Hosseinabadi, F., Chakraborty, S., Bhoi, S. K., Prochart, G., Hrvanovic, D., & Hegazy, O. (2024) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2024.3379294 · Cited by 104 · see citing works
An Overview of Lifetime Management of Power Electronic Converters
Rahimpour, S., Tarzamni, H., Kurdkandi, N. V., Husev, O. O., Vinnikov, D., & Tahami, F. (2022) · IEEE Access · doi:10.1109/access.2022.3214320 · Cited by 101 · see citing works
Two-Dimensional Hexagonal Boron Nitride for Building Next-Generation Energy-Efficient Devices
Gong, Y., Xu, Z., Li, D., Zhang, J., Aharonovich, I., & Zhang, Y. (2021) · ACS Energy Letters · doi:10.1021/acsenergylett.0c02427 · Cited by 97 · see citing works
Artificial Intelligence-Based Control Design for Reliable Virtual Synchronous Generators
Xu, Q., Dragičević, T., Xie, L., & Blaabjerg, F. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3050197 · Cited by 78 · see citing works
Wang, H., Xu, Z., Ge, X., Liao, Y., Yang, Y., Zhang, Y., Yao, B., & Chai, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3278675 · Cited by 76 · see citing works
A road map for reliable power electronics for more electric aircraft
Wileman, A. J., Aslam, S., & Perinpanayagam, S. (2021) · Progress in Aerospace Sciences · doi:10.1016/j.paerosci.2021.100739 · Cited by 73 · see citing works
Review of the Failure Mechanism and Methodologies of IGBT Bonding Wire
Li, Q., Li, Y., Fu, H., Tu, C., Xiao, B., Xiao, F., Zhai, D., & Lu, J. (2023) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2023.3297224 · Cited by 66 · see citing works
Wang, B., Wang, L., Mu, W., Qin, M., Yang, F., Liu, J., Tomoyuki, Y., & Fujihira, T. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3062620 · Cited by 65 · see citing works
Review of Active Thermal Control for Power Electronics: Potentials, Limitations, and Future Trends
Ibrahim, A., Salem, M., Jamil, M. K. M., Outeiro, M. T., & Desa, M. K. M. (2024) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2024.3376086 · Cited by 65 · see citing works
Liu, L., Zhou, D., Zou, J., & Wang, W. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3242839 · Cited by 61 · see citing works
Enhance Reliability of Semiconductor Devices in Power Converters
Nguyen, M. H., & Kwak, S. (2020) · Electronics · doi:10.3390/electronics9122068 · Cited by 60 · see citing works
Jie, H., Zhao, Z., Li, H., Wang, C., Chang, Y., & See, K. Y. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3454152 · Cited by 56 · see citing works
An Overview of Digital Twin Technology for Power Electronics: State-of-the-Art and Future Trends
Wu, C., Cui, Z., Xia, Q., Yue, J., & Lyu, F. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3570638 · Cited by 55 · see citing works
Polat, H., Hosseinabadi, F., Hasan, M. M., Chakraborty, S., Geury, T., Baghdadi, M. E., Wilkins, S., & Hegazy, O. (2023) · Batteries · doi:10.3390/batteries9020121 · Cited by 54 · see citing works
An Overview of Spread Spectrum Time Domain Reflectometry Responses to Photovoltaic Faults
Saleh, M. U., Deline, C. A., Benoit, E. J., Kingston, S. R., Edun, A. S., Jayakumar, N. K. T., Harley, J. B., Furse, C. M., & Scarpulla, M. A. (2020) · IEEE Journal of Photovoltaics · doi:10.1109/jphotov.2020.2972356 · Cited by 51 · see citing works
Degradation of SiC MOSFETs Under High-Bias Switching Events
Kozak, J. P., Zhang, R., Liu, J., Ngo, K. D. T., & Zhang, Y. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3064288 · Cited by 47 · see citing works
Yang, X., Zhang, Y., Wu, X., & Liu, G. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3314738 · Cited by 45 · see citing works
Zeng, Z., Ou, K., Wang, L., & Yu, Y. (2020) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2020.3012065 · Cited by 40 · see citing works
Self-citationA Real-Time Adaptive IGBT Thermal Model Based on an Effective Heat Propagation Path Concept
Wang, Z., Qiao, W., & Qu, L. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2020.2973181 · Cited by 39 · see citing works
Behara, R. K., & Saha, A. K. (2022) · Energies · doi:10.3390/en15197164 · Cited by 37 · see citing works
Choe, C., Chen, C., Nagao, S., & Suganuma, K. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024986 · Cited by 35 · see citing works
Nyamathulla, S., Dhanamjayulu, C., & Muyeen, S. M. (2023) · Electronics · doi:10.3390/electronics12081944 · Cited by 34 · see citing works
Reliability of Power Semiconductor Modules: A State-of-the-Art Review
Agirrezabala, E., Aizpuru, I., Garrido, D., & Portillo, A. (2025) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2025.3576994 · Cited by 34 · see citing works
Lifetime Prediction Method of the Traction Converter IGBT Based on Plastic Strain Energy Density
Shi, Y., Liu, J., Ai, Y., Chen, S., & Pei, C. (2023) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2023.3274567 · Cited by 32 · see citing works
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34 · see citing works
“Rep-resentative TSEPs include V DS ( on ) , V th , I dss , Miller plateau voltage, dI / dt , and I gp , which can also signal potential failure or package degradation [64,71–74].”
Review on Power Cycling Reliability of SiC Power Device
Gao, X., Jia, Q., Wang, Y., Zhang, H., Ma, L., Zou, G., & Guo, F. (2024) · Electronic Materials · doi:10.3390/electronicmat5020007 · Cited by 30 · see citing works
Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms
Ibrahim, M. S., Abbas, W., Waseem, M., Lu, C. B., Lee, H. H., Fan, J., & Loo, K. H. (2023) · Mathematics · doi:10.3390/math11153283 · Cited by 29 · see citing works
Chen, T.-C., Alazzawi, F. J. I., Salameh, A. A. M., Ahmed, A. A. A., Pustokhina, I., Surendar, A., & Oudah, A. Y. (2021) · Mechanics of Advanced Materials and Structures · doi:10.1080/15376494.2021.2014002 · Cited by 29 · see citing works
Al-Mohamad, A., Hoblos, G., & Puig, V. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113676 · Cited by 28 · see citing works
Prelinearized Class-B Power Amplifier for Piezoelectric Transducers and Portable Ultrasound Systems
Choi, H. (2019) · Sensors · doi:10.3390/s19020287 · Cited by 28 · see citing works
Prognostics of Health Measures for Machines With Aging and Dynamic Cumulative Damage
Duan, C., & Deng, C. (2020) · IEEE/ASME Transactions on Mechatronics · doi:10.1109/tmech.2020.2995757 · Cited by 27 · see citing works
IGBT lifetime model considering composite failure modes
Li, L., He, Y., Wang, L., Wang, C., & Liu, X. (2022) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2022.106529 · Cited by 26 · see citing works
Electrothermal Performance-Based FCS-MPC for Dynamic Thermal Balance Control of Traction Converters
Yang, C., Peng, T., Huang, X., Fan, X., Tao, H., Yang, C., & Gui, W. (2021) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2021.3076019 · Cited by 24 · see citing works
A humidity-induced novel failure mechanism in power semiconductor diodes
Leppänen, J., Ross, G., Vuorinen, V., Ingman, J. M., Jormanainen, J., & Paulasto‐Kröckel, M. (2021) · Microelectronics Reliability · doi:10.1016/j.microrel.2021.114207 · Cited by 24 · see citing works
Artificial Intelligence for Power Electronics in Electric Vehicles: Challenges and Opportunities
Paret, P. P., Finegan, D. P., & Narumanchi, S. V. J. (2022) · Journal of Electronic Packaging · doi:10.1115/1.4056306 · Cited by 24 · see citing works
Yu, R., Jahdi, S., Alatise, O. M., Gonzalez, J. A. O., Munagala, S. P., Simpson, N., & Mellor, P. (2023) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2023.3316928 · Cited by 27 · see citing works
Orville, T., Tajwar, M., Bihani, R., Saha, P., & Hannan, M. A. (2025) · Thermo · doi:10.3390/thermo5030030 · Cited by 23 · see citing works
Roy, S., Hanif, A., & Khan, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3032996 · Cited by 22 · see citing works
Self-citationLi, H., Yu, R., Yao, R., Wang, X., Li, J., Liu, R., Yu, Y., & Chen, X. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3078891 · Cited by 22 · see citing works
Self-citationDirect on Chip Thermal Measurement in IGBT Modules Using FBG Technology—Sensing Head Interfacing
Chen, S., Vilchis-Rodriguez, D. S., Djurović, S., Barnes, M., Mckeever, P., & Jia, C. (2021) · IEEE Sensors Journal · doi:10.1109/jsen.2021.3131322 · Cited by 21 · see citing works
Online Condition Monitoring Methodology for Power Electronics Package Reliability Assessment
Martin, H., Smits, E. C. P., Poelma, R. H., van Driel, W. D., & Zhang, G. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3352747 · Cited by 21 · see citing works
Chaturvedi, A., Sarma, M., Chaturvedi, S. K., & Bernstein, J. B. (2023) · Microelectronics Reliability · doi:10.1016/j.microrel.2023.114958 · Cited by 20 · see citing works
Shen, J., Zhang, J., Huang, X., Qiu, L., & Fang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266287 · Cited by 20 · see citing works
Du, X. H., Du, X., Zhang, J., & Li, G. (2020) · Journal of Power Electronics · doi:10.1007/s43236-020-00154-z · Cited by 20 · see citing works
Active Peltier Effect Heat Sink for Power Semiconductor Device Thermal Stability Enhancement
Ding, L., Song, R., Zhao, S., Wang, J., & Mantooth, H. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3290196 · Cited by 19 · see citing works
Gong, T., Ma, C., Cao, L., & Su, W. (2025) · Applied Thermal Engineering · doi:10.1016/j.applthermaleng.2025.127258 · Cited by 17 · see citing works
Review of Methodologies for Structural Integrity Evaluation of Power Modules
MIYAZAKI, N., SHISHIDO, N., & HAYAMA, Y. (2020) · Journal of Electronic Packaging · doi:10.1115/1.4048038 · Cited by 17 · see citing works
Liu, X., Sun, F., Wang, W., Zhao, J., Wang, L., Che, Z., Bai, G., Wang, X., Wang, J., Kim, M. J., et al. (2022) · International Journal of Minerals Metallurgy and Materials · doi:10.1007/s12613-021-2336-9 · Cited by 17 · see citing works
Xiao, X., Ge, X., Ke, Q., Yong, L., Liao, Y., Wang, H., & Zhang, Y. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3231718 · Cited by 17 · see citing works
Vaccaro, A., Biadene, D., & Magnone, P. (2023) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2023.3331814 · Cited by 17 · see citing works
Traction Inverter Highly Accelerated Life Testing With High-Temperature Stress
Wu, Q., Wang, M., Zhou, W., Lu, X., Xiao, K., Bhat, K. P., & Chen, C. (2020) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2020.3006778 · Cited by 17 · see citing works
Rizzo, S. A., Susinni, G., & Iannuzzo, F. (2021) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2021.3066959 · Cited by 17 · see citing works
Review on the Thermal Models Applications in the Reliability of Power Semiconductor Device
Zhang, J., Shen, H., Sun, H., & Wang, Z. (2025) · IET Power Electronics · doi:10.1049/pel2.70065 · Cited by 16 · see citing works
MLD-Based Thermal Behavior Analysis of Traction Converters Under Faulty Conditions
Yang, C., Peng, T., Gao, F., Tao, H., Yang, C., Feng, J., & Gui, W. (2020) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2020.3048025 · Cited by 16 · see citing works
Design of Reference Junction Temperature Swing of Power Module for Thermal Management
Zhang, J., Du, X., Qian, C., Ye, Y., & Zhou, J. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3201532 · Cited by 16 · see citing works
An Accurate and Intelligent Approach to Predicting the Power Device Fatigue Failure Process
Liu, Y., Jia, L., Wang, L., Wang, J., Zhang, J., & Zhang, Z. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3339618 · Cited by 15 · see citing works
Model Predictive-Based Fault-Tolerant and Power Balancing Control for Cascaded H-Bridge Inverter
Wang, X., Zhao, Y., Ru, Y., Hu, W., & Zou, T. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3349311 · Cited by 14 · see citing works
A Flexible-PCB on DPC GaN Power Module With Ultralow Parasitic Inductance
Kong, H., Jia, L., Wang, L., Yao, Y., Yang, F., & Cui, H. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3521083 · Cited by 14 · see citing works
Samavatian, V., Fotuhi‐Firuzabad, M., Dehghanian, P., & Blaabjerg, F. (2021) · IEEE Access · doi:10.1109/access.2021.3075974 · Cited by 14 · see citing works
Driver Integrated Online Rds-on Monitoring Method for SiC Power Converters
Chen, Z., Chen, C., & Huang, A. Q. (2022) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce50734.2022.9947617 · Cited by 14 · see citing works
Xiao, Y., Goyal, G. K., Su, J., Abbasi, H. R., Yan, H., Yao, X., Tantratian, K., Yan, Z., Alksninis, A., Phipps, M., et al. (2025) · Resources Conservation and Recycling · doi:10.1016/j.resconrec.2025.108309 · Cited by 15 · see citing works
Lima, A. A. D. M., Souza, F. A. A., Morais, E. E. C., Honório, D. D. A., & Barreto, L. H. S. C. (2022) · Workshop on Communication Networks and Power Systems (WCNPS) · doi:10.1109/wcnps56355.2022.9969681 · Cited by 13 · see citing works
Yang, X., Wu, X., Heng, K., & Liu, G. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2023.3244368 · Cited by 13 · see citing works
Liao, J. P., Peng, T., Xu, Y., Gui, G., Yang, C., Yang, C., & Gui, W. (2024) · Reliability Engineering & System Safety · doi:10.1016/j.ress.2024.110302 · Cited by 13 · see citing works
Detection of Bond Wire Lift Off in IGBT Power Modules Using Ultrasound Resonators
Hanif, A., Azad, A. N. M. W., & Khan, F. (2020) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec39645.2020.9124226 · Cited by 13 · see citing works
Self-citationA Novel Three-Pulse Equivalent Power Loss Profile for Simplified Thermal Estimation
Zhang, Y., Ge, X., Zhang, Y., Xie, D., Yao, B., & Wang, H. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3070994 · Cited by 13 · see citing works
Characterization of plastic and creep behavior in thick aluminum wire for power modules
SHISHIDO, N., Setoguchi, Y., Kumagai, Y., KOGANEMARU, M., IKEDA, T., HAYAMA, Y., & MIYAZAKI, N. (2021) · Microelectronics Reliability · doi:10.1016/j.microrel.2021.114185 · Cited by 13 · see citing works
Rahimi, T., Ding, L., Abadifard, A., Ghavidel, P., Farhadi, M., & Faraji, R. (2021) · Case Studies in Thermal Engineering · doi:10.1016/j.csite.2021.101134 · Cited by 13 · see citing works
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module
Sun, P. F., Niu, F., Zeng, Z., Li, K., & Ou, K. (2023) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2023.3245302 · Cited by 12 · see citing works
Zhang, Y., Shan, J., Song, T., Huang, Z., & Zhu, X. (2023) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2023.3283673 · Cited by 12 · see citing works
Xie, M., Sun, P., Ouyang, W., Luo, Q., & Du, X. (2023) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2023.3329162 · Cited by 12 · see citing works
Management of aging assets in power distribution systems: A comprehensive review
Shaghaghi, A., Taghitahooneh, M., Yahyaeifar, M., & Dashti, R. (2024) · Energy Strategy Reviews · doi:10.1016/j.esr.2024.101529 · Cited by 12 · see citing works
Cui, Y., Hu, J., Tallam, R. M., Miklosovic, R., & Zargari, N. R. (2023) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec43580.2023.10131151 · Cited by 12 · see citing works
A Model-Based Prognostics Approach for RUL Forecasting of a Degraded DC-DC Converter
Al-Mohamad, A., Hoblos, G., & Puig, V. (2019) · Conference on Control and Fault-Tolerant Systems · doi:10.1109/systol.2019.8864778 · Cited by 12 · see citing works
Deng, S., Lan, H., Yue, K., Chen, Z., Zhang, X., Huang, R., Huang, Z., & Li, W. (2024) · Energy · doi:10.1016/j.energy.2024.133599 · Cited by 11 · see citing works
A Biodegradable Radical Polymer Enables High‐Performance, Physically Transient Organic Memory
Ko, J., Kim, S., Kim, D., Lim, T., Jin, S., Jeong, Y., Joo, Y., & Cho, S. (2025) · Angewandte Chemie International Edition · doi:10.1002/anie.202422826 · Cited by 11 · see citing works
Kalay, M. Ş., & Akpolat, A. N. (2025) · IET Renewable Power Generation · doi:10.1049/rpg2.70111 · Cited by 11 · see citing works
Role of reliability assessment in Si-based non-Isolated DC-DC power electronic converters
Jayaswal, K., & Palwalia, D. K. (2022) · Materials Today Proceedings · doi:10.1016/j.matpr.2022.02.241 · Cited by 11 · see citing works
Tang, J., Li, L., Zhang, G., Zhang, J., & Liu, P. (2022) · Microelectronics Reliability · doi:10.1016/j.microrel.2022.114859 · Cited by 10 · see citing works
A Bond Wire Aging Monitoring Method for IGBT Modules Based on Bond Wire Degradation Voltage
Dai, Z., Ge, X., Lin, C., Wang, H., Xu, Z., & Liang, G. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3476374 · Cited by 10 · see citing works
Li, L., He, Y., Wang, L., Wang, C., Wang, C., & Wu, X. (2021) · Microelectronics Reliability · doi:10.1016/j.microrel.2021.114165 · Cited by 10 · see citing works
Reliability in Electronic Packaging: Past, Now and Future
Zhiwen, C., Yunhui, M., Liu, S., Li, H., Liu, L., Lei, X., Ying, Z., & Xiang, G. (2021) · Journal of Mechanical Engineering · doi:10.3901/jme.2021.16.248 · Cited by 10 · see citing works
Wang, B., Wang, J., Ma, D., Wang, L., Yang, F., Li, X., & Tan, Y. (2019) · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.23919/icpe2019-ecceasia42246.2019.8796932 · Cited by 10 · see citing works
Joint Estimation of MOSFET Degradation in a DC-DC Converter Using Extended Kalman Filter
Alyakhni, A., Al-Mohamad, A., & Hoblos, G. (2019) · Conference on Control and Fault-Tolerant Systems · doi:10.1109/systol.2019.8864731 · Cited by 10 · see citing works
Qiu, Y., & Li, Z. (2024) · Electronics · doi:10.3390/electronics13081512 · Cited by 9 · see citing works
Hou, Y. K., Lu, C. B., Abbas, W., Ibrahim, M. S., Waseem, M., Lee, H. H., & Loo, K. H. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3476980 · Cited by 9 · see citing works
Behara, R. K., & Saha, A. K. (2025) · Renewable and Sustainable Energy Reviews · doi:10.1016/j.rser.2025.115573 · Cited by 11 · see citing works
Khoso, A. Q., Fareedi, A. U. R., Khan, H., Manca, O., Buonomo, B., & Nardini, S. (2025) · International Journal of Heat and Mass Transfer · doi:10.1016/j.ijheatmasstransfer.2025.127705 · Cited by 9 · see citing works
Overview of Digital Twin Development in Power Electronics
Bhoi, S. K., Chakraborty, S., Hosseinabadi, F., Frikha, M. A., Martin, G. E., Sorniotti, A., & Hegazy, O. (2025) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2025.3615238 · Cited by 13 · see citing works
Physics-Embedded Neural ODEs for Sim-to-Real Edge Digital Twins of Hybrid Power Electronics Systems
Zheng, J., Wang, H., Zeng, Y., Mou, D., Zhang, X., Li, H., Vázquez, S., & Franquelo, L. G. (2026) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2025.3645414 · Cited by 9 · see citing works
Analysis and Comparison of Three-Level ANPC With Different Commutation Modes
Zhang, B., Zou, Z., & Wang, Z. (2021) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/pemc48073.2021.9432581 · Cited by 9 · see citing works
Model Predictive Control Algorithm for Prolonging Lifetime of Three-Phase Voltage Source Converters
Nguyen, M. H., Kwak, S., & Choi, S. (2023) · IEEE Access · doi:10.1109/access.2023.3294995 · Cited by 9 · see citing works
DC Power Cycling Test and Lifetime Prediction for SiC MOSFETs
Ding, X., Wang, B., & Yang, Y. (2023) · International Conference on Electrical Machines and Systems (ICEMS) · doi:10.1109/icems59686.2023.10344327 · Cited by 8 · see citing works
Verbrugge, B., Rasool, H., Hasan, M. M., Chakraborty, S., Geury, T., Baghdadi, M. E., & Hegazy, O. (2022) · Energies · doi:10.3390/en16010153 · Cited by 8 · see citing works
- Authors
- Hanif, A., Yu, Y., DeVoto, D., & Khan, F.
- Affiliations
- University of Missouri–Kansas City (US)
- University of Utah (US)
- National Laboratory of the Rockies (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2019-05
- Volume
- 34
- Issue
- 5
- Pages
- 4729-4746
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2884957744
- Cited by
- 272
- References
- 133
- Citations by year
- 2026: 34 · 2025: 61 · 2024: 40 · 2023: 47 · 2022: 28 · 2021: 30 · 2020: 24 · 2019: 7
- FWCI
- 5.84
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- National Renewable Energy Laboratory
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Keywords
- power devices, failure mechanisms, lifetime prediction, accelerated aging, remaining life estimation, junction temperature measurement, condition monitoring
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
