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Resistive Switches and Memories from Silicon Oxide

Yao, Jun, Sun, Zhengzong, Zhong, Lin, Natelson, Douglas, Tour, James M.·2010·Nano Letters
DOI 10.1021/nl102255r
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Abstract

Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiO(x) matrix, with SiO(x) itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles). These properties in a SiO(x)-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible.

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Metadata

Authors
Yao, J., Sun, Z., Zhong, L., Natelson, D., & Tour, J. M.
Venue
Nano Letters
Publisher
American Chemical Society (ACS)
Published
2010-08-31
Volume
10
Issue
10
Pages
4105-4110
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
DOI
10.1021/nl102255r
OpenAlex
W2086007999
Cited by
338
References
5
FWCI
20.18
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Resistive Switches and Memories from Silicon Oxide. https://app.cochat.ai/papers/10.1021/nl102255r
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Yao, J., Sun, Z., Zhong, L., Natelson, D., & Tour, J. M. (2010). Resistive Switches and Memories from Silicon Oxide. Nano Letters. https://doi.org/10.1021/nl102255r

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