The DOI matches its Crossref record; 55 of the 55 references it cites were found in a registry or an index.
Superior Field Emission Properties of Layered WS2-RGO Nanocomposites
Open accessAbstract
We report here the field emission studies of a layered WS 2-RGO composite at the base pressure of ~1 × 10−8 mbar. The turn on field required to draw a field emission current density of 1 μA/cm 2 is found to be 3.5, 2.3 and 2 V/μm for WS 2, RGO and the WS 2-RGO composite respectively. The enhanced field emission behavior observed for the WS 2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of ~800 μA/cm 2 is drawn at an applied field of 4.1 V/μm from a few layers of the WS 2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS 2 and RGO, where graphene-like states are dumped in the region of the WS 2 fundamental gap.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Kresse, G., & Furthmüller, J. (1996) · Computational Materials Science · doi:10.1016/0927-0256(96)00008-0 · Cited by 75,638
Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Ab initio molecular dynamics for liquid metals
Kresse, G., & Hafner, J. (1993) · Physical Review B · doi:10.1103/physrevb.47.558 · Cited by 45,727
Kresse, G., & Hafner, J. (1994) · Physical Review B · doi:10.1103/physrevb.49.14251 · Cited by 23,019
Perdew, J. P., Chevary, J. A., Vosko, S. H., Jackson, K. A., Pederson, M. R., Singh, D. J., & Fiolhais, C. (1992) · Physical Review B · doi:10.1103/physrevb.46.6671 · Cited by 22,269
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Perdew, J. P., Chevary, J. A., Vosko, S. H., Jackson, K. A., Pederson, M. R., Singh, D. J., & Fiolhais, C. (1993) · Physical Review B · doi:10.1103/physrevb.48.4978.2 · Cited by 17,144
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Electron emission in intense electric fields
Fowler, R. H., & Nordheim, L. (1928) · Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1928.0091 · Cited by 5,752
Graphene: The New Two‐Dimensional Nanomaterial
Rao, C. N. R., Sood, A. K., Subrahmanyam, K. S., & Govindaraj, A. (2009) · Angewandte Chemie International Edition · doi:10.1002/anie.200901678 · Cited by 3,953
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., et al. (2009) · Nature Physics · doi:10.1038/nphys1274 · Cited by 3,765
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111)
Neugebauer, J., & Scheffler, M. (1992) · Physical Review B · doi:10.1103/physrevb.46.16067 · Cited by 2,842
Doping Graphene with Metal Contacts
Giovannetti, G., Khomyakov, P. A., Brocks, G., Karpan, V. M., van den Brink, J., & Kelly, P. J. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.026803 · Cited by 2,605
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
Kong, D., Wang, H., Cha, J. J., Pasta, M., Koski, K. J., Yao, J., & Cui, Y. (2013) · Nano Letters · doi:10.1021/nl400258t · Cited by 2,250
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P.-H., & Eda, G. (2013) · ACS Nano · doi:10.1021/nn305275h · Cited by 2,122
Polyhedral and cylindrical structures of tungsten disulphide
Tenne, R., Margulis, L., Genut, M., & Hodes, G. (1992) · Nature · doi:10.1038/360444a0 · Cited by 2,002
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
MoS2 and WS2 Analogues of Graphene
Ramakrishna Matte, H. S. S., Gomathi, A., Manna, A. K., Late, D. J., Datta, R., Pati, S. K., & Rao, C. N. R. (2010) · Angewandte Chemie International Edition · doi:10.1002/anie.201000009 · Cited by 1,675
Self-citationElectrical control of neutral and charged excitons in a monolayer semiconductor
Ross, J. S., Wu, S., Yu, H., Ghimire, N. J., Jones, A. M., Aivazian, G., Yan, J., Mandrus, D. G., Xiao, D., Yao, W., et al. (2013) · Nature Communications · doi:10.1038/ncomms2498 · Cited by 1,583
Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., Fam, D. W. H., Tok, A. I. Y., Zhang, Q., & Zhang, H. (2012) · Small · doi:10.1002/smll.201101016 · Cited by 1,536
Tongay, S., Zhou, J., Ataca, C., Lo, K., Matthews, T. S., Li, J., Grossman, J. C., & Wu, J. (2012) · Nano Letters · doi:10.1021/nl302584w · Cited by 1,428
Sensing Behavior of Atomically Thin-Layered MoS2 Transistors
Late, D. J., Huang, Y.-K., Liu, B., Acharya, J., Shirodkar, S. N., Luo, J., Yan, A., Charles, D., Waghmare, U. V., Dravid, V. P., et al. (2013) · ACS Nano · doi:10.1021/nn400026u · Cited by 1,374
Self-citationHunting for Monolayer Boron Nitride: Optical and Raman Signatures
Gorbachev, R. V., Riaz, I., Nair, R. R., Jalil, R., Britnell, L., Belle, B. D., Hill, E. W., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Small · doi:10.1002/smll.201001628 · Cited by 1,151
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Late, D. J., Liu, B., Matte, H. S. S. R., Dravid, V. P., & Rao, C. N. R. (2012) · ACS Nano · doi:10.1021/nn301572c · Cited by 1,123
Self-citationFrom Mott state to superconductivity in 1T-TaS2
Sipos, B., Kusmartseva, A. F., Akrap, A., Berger, H., Forró, L., & Tutiš, E. (2008) · Nature Materials · doi:10.1038/nmat2318 · Cited by 1,048
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
Liu, W., Kang, J., Sarkar, D., Khatami, Y., Jena, D., & Banerjee, K. (2013) · Nano Letters · doi:10.1021/nl304777e · Cited by 985
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
Hu, P., Wen, Z., Wang, L., Tan, P., & Xiao, K. (2012) · ACS Nano · doi:10.1021/nn300889c · Cited by 913
Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
Hu, P., Wang, L., Yoon, M., Zhang, J., Feng, W., Wang, X., Wen, Z., Idrobo, J. C., Miyamoto, Y., Geohegan, D. B., et al. (2013) · Nano Letters · doi:10.1021/nl400107k · Cited by 824
Ding, Y., Wang, Y., Ni, J., Shi, L., Shi, S., & Tang, W. (2011) · Physica B: Condensed Matter · doi:10.1016/j.physb.2011.03.044 · Cited by 758
GaS and GaSe Ultrathin Layer Transistors
Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P. (2012) · Advanced Materials · doi:10.1002/adma.201201361 · Cited by 673
Self-citationLi, H., Lu, G., Wang, Y., Yin, Z., Cong, C., He, Q., Wang, L., Ding, F., Yu, T., & Zhang, H. (2013) · Small · doi:10.1002/smll.201202919 · Cited by 659
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Larentis, S., Fallahazad, B., & Tutuc, E. (2012) · Applied Physics Letters · doi:10.1063/1.4768218 · Cited by 591
Ayari, A., Cobas, E., Ogundadegbe, O., & Fuhrer, M. S. (2007) · Journal of Applied Physics · doi:10.1063/1.2407388 · Cited by 586
Kim, K. K., Hsu, A., Jia, X., Kim, S. M., Shi, Y., Dresselhaus, M., Palacios, T., & Kong, J. (2012) · ACS Nano · doi:10.1021/nn301675f · Cited by 570
Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
Braga, D., Gutiérrez Lezama, I., Berger, H., & Morpurgo, A. F. (2012) · Nano Letters · doi:10.1021/nl302389d · Cited by 519
Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
Late, D. J., Liu, B., Matte, H. S. S. R., Rao, C. N. R., & Dravid, V. P. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201102913 · Cited by 495
Self-citationMoS2 and WS2 Analogues of Graphene
Ramakrishna Matte, H. S. S., Gomathi, A., Manna, A. K., Late, D. J., Datta, R., Pati, S. K., & Rao, C. N. R. (2010) · Angewandte Chemie · doi:10.1002/ange.201000009 · Cited by 468
Self-citationTeweldebrhan, D., Goyal, V., & Balandin, A. A. (2010) · Nano Letters · doi:10.1021/nl903590b · Cited by 455
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013) · Applied Physics Letters · doi:10.1063/1.4803920 · Cited by 399
Self-citationLattice Mode Degeneracy in MoS2and Other Layer Compounds
Verble, J. L., & Wieting, T. J. (1970) · Physical Review Letters · doi:10.1103/physrevlett.25.362 · Cited by 387
Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
Steinberg, H., Gardner, D. R., Lee, Y. S., & Jarillo-Herrero, P. (2010) · Nano Letters · doi:10.1021/nl1032183 · Cited by 294
Experiments on plants grown in space. Status and prospects.
Halstead, T. W., & Dutcher, F. R. (1984) · PubMed · Cited by 251
Enhanced Field‐Emission Behavior of Layered MoS2 Sheets
Kashid, R. V., Late, D. J., Chou, S. S., Huang, Y., De, M., Joag, D. S., More, M. A., & Dravid, V. P. (2013) · Small · doi:10.1002/smll.201300002 · Cited by 218
Self-citationAtomically-thin crystalline films and ribbons of bismuth telluride
Teweldebrhan, D., Goyal, V., Rahman, M. S., & Balandin, A. A. (2010) · Applied Physics Letters · doi:10.1063/1.3280078 · Cited by 133
Field emission properties of boron and nitrogen doped carbon nanotubes
Sharma, R. B., Late, D. J., Joag, D. S., Govindaraj, A., & Rao, C. N. R. (2006) · Chemical Physics Letters · doi:10.1016/j.cplett.2006.06.089 · Cited by 133
Self-citationGalvis, J. A., Rodière, P., Guillamón, I., et al. (2013) · Physical Review B · doi:10.1103/physrevb.87.094502 · Cited by 38
Relativistic bandstructure and Fermi surface of PdTe2by the LMTO method
Jan, J.-P., & Skriver, H. L. (1977) · Journal of Physics F Metal Physics · doi:10.1088/0305-4608/7/9/017 · Cited by 37
Cited by
Chakravarty, D., & Late, D. J. (2015) · RSC Advances · doi:10.1039/c4ra12599a · Cited by 98
Self-citation
Metadata
- Authors
- Rout, C. S., Joshi, P. D., Kashid, R. V., Joag, D. S., More, M. A., Simbeck, A. J., Washington, M., Nayak, S. K., & Late, D. J.
- Venue
- Scientific Reports
- Published
- 2013-11-21
- Volume
- 3
- Issue
- 1
- Pages
- 3282-3282
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2014977999
- Cited by
- 270
- References
- 55
- FWCI
- 10.95
- Type
- journal article
- Language
- en
- Open access
- gold
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
