Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application

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Items 101–113 of 113

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4. Resistive memory properties of an electrochemical SiO2-based device without an active electrode
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5. Synthesis, structural and electrical analysis of La and Nd-doped KCa(BO3)2 interlayers in Al/n-Si photodiode structures
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6. Impact of the electronic band structure on the reliability of triple layer a-VMCO devices
   Attilio Belmonte, B. Govoreanu, Subhali Subhechha, Luca Di Piazza, Ludovic Goux, Gouri Sankar Kar · 2017 · IEEE International Reliability Physics Symposium proceedings
7. Large On/Off and Rectification Ratios, Self-Compliance, High-Uniformity in Pt/Al2O3/TaOx/Ta Self-Rectifying Memristors
   Sheng‐Guang Ren, Run Ni, Xiaodi Huang, Yi Li, Xiangshui Miao · 2021 · IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
8. Enhancing simulation feasibility for multi-layer 2D MoS 2 RRAM devices: reliability performance learnings from a passive network model
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9. Capturing Configurable Self-Rectifying Behaviors: Multi-Interfaced Oxide-Based Resistive Random Access Memory
   Ying‐Chen Chen, Chih‐Yang Lin, Chao‐Cheng Lin, Chang-Hsien Lin · 2025 · ECS Journal of Solid State Science and Technology
10. Highly stable self-rectifying memristor integrated arrays for simulated annealing neuromorphic computing
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11. Topology-Aware Recognition Framework Based on Ultra-High On/Off Ratio Memristors for Handwritten Digit Recognition
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12. HfO2 self-rectifying selector in RRAM array
    Xinlei Zhang, Hao Ji, Ran Jiang · 2018 · IEEE International Conference on Solid-State and Integrated Circuit Technology
13. A Compact and Fast Single‐Spike TTFS Encoder With Ultralow Operating Voltage for Efficient Neuromorphic Fourier Transform
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