The DOI matches its Crossref record; 54 of the 54 references it cites were found in a registry or an index.
Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application
Abstract
The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ∼6 × 10(2) is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.
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In the citing paper
“It has a low current analog operation capability and electroforming-free characteristics, allowing high reliability and uniformity.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“the self-rectifying characteristics of the device enable large-array operation without complex transistor or selector processes”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“the device is highly compatible with the conventional CMOS process.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“In this regard, charge trap memristors (CTM) are promising memristive systems due to their inherent forming‐free and self‐rectifying characteristics.[ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [5]
In the citing paper
“A charge trap memristor (CTM) is an attractive candidate for the memristor cell of the MCA, because the embodied rectifying characteristic frees it from the sneak current issue.”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [5]
Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.06.002 · Cited by 1,412
Self-citationComplementary resistive switches for passive nanocrossbar memories
Linn, E., Rosezin, R., Kügeler, C., & Waser, R. M. (2010) · Nature Materials · doi:10.1038/nmat2748 · Cited by 1,286
Emerging memories: resistive switching mechanisms and current status
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,099
Kano, K. (1997) · Cited by 943
Electrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921
Sub-nanosecond switching of a tantalum oxide memristor
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Nanobatteries in redox-based resistive switches require extension of memristor theory
Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., & Waser, R. (2013) · Nature Communications · doi:10.1038/ncomms2784 · Cited by 587
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Research works printed but not linked: 1
- Lange's Handbook of Chemistry, ed. J. A. Dean, McGraw-Hill Professional, Columbus, 15th edn., 1998
Cited by
Sorted by citations
Analog Synaptic Behavior of a Silicon Nitride Memristor
Kim, S., Kim, H., Hwang, S., Kim, M.-H., Chang, Y.-F., & Park, B.-G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b11191 · Cited by 252
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
Li, C., Han, L., Jiang, H., Jang, M.-H., Lin, P., Wu, Q., Barnell, M., Yang, J. J., Xin, H. L., & Xia, Q. (2017) · Nature Communications · doi:10.1038/ncomms15666 · Cited by 229
Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays
Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220
Memristive Crossbar Arrays for Storage and Computing Applications
Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205
Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films
Hu, L., Fu, S., Chen, Y., Cao, H., Liang, L., Zhang, H., Gao, J., Wang, J., & Zhuge, F. (2017) · Advanced Materials · doi:10.1002/adma.201606927 · Cited by 192
Metadata
- Authors
- Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F.
- Affiliations
- Tsinghua University (CN)
- Corresponding author
- Zeng, Fei
- Pan, Feng
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2015
- Volume
- 7
- Issue
- 14
- Pages
- 6031-6038
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W2095049814
- Cited by
- 113
- References
- 54
- Citations by year
- 2026: 1 · 2025: 9 · 2024: 8 · 2023: 1 · 2022: 6 · 2021: 15 · 2020: 11 · 2019: 14 · 2018: 15 · 2017: 14 · 2016: 13 · 2015: 6
- FWCI
- 7.72
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanoscale (publishedVersion)
- PubMed (publishedVersion)
- Funders
- National Natural Science Foundation of China (51231004 & 51371103)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive switching, forming-free switching, tantalum oxide, n-Si, oxygen vacancies, Schottky barrier, oxygen vacancy filaments, crossbar memory, high-density memory, retention, switching uniformity
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