The DOI matches its Crossref record; 54 of the 54 references it cites were found in a registry or an index.
Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application
Abstract
The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ∼6 × 10(2) is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.
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In the citing paper
“It has a low current analog operation capability and electroforming-free characteristics, allowing high reliability and uniformity.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“the self-rectifying characteristics of the device enable large-array operation without complex transistor or selector processes”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“the device is highly compatible with the conventional CMOS process.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [20]
In the citing paper
“In this regard, charge trap memristors (CTM) are promising memristive systems due to their inherent forming‐free and self‐rectifying characteristics.[ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [5]
In the citing paper
“A charge trap memristor (CTM) is an attractive candidate for the memristor cell of the MCA, because the embodied rectifying characteristic frees it from the sneak current issue.”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [5]
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Metadata
- Authors
- Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F.
- Affiliations
- Tsinghua University (CN)
- Corresponding author
- Zeng, Fei
- Pan, Feng
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2015
- Volume
- 7
- Issue
- 14
- Pages
- 6031-6038
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W2095049814
- Cited by
- 113
- References
- 54
- Citations by year
- 2026: 1 · 2025: 9 · 2024: 8 · 2023: 1 · 2022: 6 · 2021: 15 · 2020: 11 · 2019: 14 · 2018: 15 · 2017: 14 · 2016: 13 · 2015: 6
- FWCI
- 7.72
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanoscale (publishedVersion)
- PubMed (publishedVersion)
- Funders
- National Natural Science Foundation of China (51231004 & 51371103)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive switching, forming-free switching, tantalum oxide, n-Si, oxygen vacancies, Schottky barrier, oxygen vacancy filaments, crossbar memory, high-density memory, retention, switching uniformity
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