Cited by 113Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhase-change materials and chalcogenides

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Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application

Gao, Shuang, Zeng, Fei, Li, Fan, Wang, Minjuan, Mao, Haijun, Wang, Guangyue, Song, Cheng, Pan, Feng·2015·Nanoscale

DOI 10.1039/c4nr06406b

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Abstract

The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ∼6 × 10(2) is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.

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Authors: Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F.
Affiliations: Tsinghua University (CN)
Corresponding author: Zeng, Fei
Pan, Feng
ORCID: Gao, Shuang
Zeng, Fei
Li, Fan
Mao, Haijun
Wang, Guangyue
Song, Cheng
Pan, Feng
Venue: Nanoscale
Publisher: Royal Society of Chemistry (RSC)
Published: 2015
Volume: 7
Issue: 14
Pages: 6031-6038
ISSN: 2040-3364 (ISSN-L)
2040-3372
DOI: 10.1039/c4nr06406b
OpenAlex: W2095049814
Cited by: 113
References: 54
Citations by year: 2026: 1 · 2025: 9 · 2024: 8 · 2023: 1 · 2022: 6 · 2021: 15 · 2020: 11 · 2019: 14 · 2018: 15 · 2017: 14 · 2016: 13 · 2015: 6
FWCI: 7.72
Type: journal article
Language: en
Open access: closed
Locations: Nanoscale (publishedVersion)
PubMed (publishedVersion)
Funders: National Natural Science Foundation of China (51231004 & 51371103)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords: resistive switching, forming-free switching, tantalum oxide, n-Si, oxygen vacancies, Schottky barrier, oxygen vacancy filaments, crossbar memory, high-density memory, retention, switching uniformity

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Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application

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