Student or educator? Sign up with your school email and get 6 months of Pro free.
CoChat
Sign Up
Cited by 198

The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.

Cation-based resistance change memory

Valov, Ilia, Kozicki, Michael N·2013·Journal of Physics D: Applied Physics
DOI 10.1088/0022-3727/46/7/074005
Open this paper in CoChat — free account

Abstract

A potential replacement for current charge-based memory technologies in the nanoscale device regime is a form of resistance change memory (RRAM) which utilizes cation transport and redox reactions to form and remove a conducting filament in a metal–electrolyte/insulator–metal (MEM/MIM) structure. A variety of oxide and higher chalcogenide materials have been used as the silver or copper ion transport medium, yielding devices with similar switching characteristics. The technology has been the subject of extensive research in academia and industry and is in an advanced stage of commercialization but there remain a number of fundamental questions regarding the fine details of device operation and the connection with electrochemical theory at the nanoscale. This review surveys some of the published research in the area and considers the topics of ion-conducting materials, rate limiting steps during device operation and filament stability. Device performance and modelling are also presented and discussed.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1088/0022-3727/46/7/074005

Cites

13 of 13 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 13 references

Research works printed but not linked: 91

  1. 10.1002/adma.201102597 · DOI · Paper page
  2. Valov I, 2011, Nanotechnology, 22, 10.1088/0957-4484/22/28/289502 · DOI · Paper page
  3. 10.1109/TED.2009.2016019 · DOI · Paper page
  4. 10.1109/TED.2011.2116120 · DOI · Paper page
  5. Kund M, 2005, IEDM Tech. Dig., 754
  6. Fölling S Türel Ö Likharev K, 2001, Proc. IJCNN '01, 216
  7. 10.1063/1.2989132 · doi:10.1063/1.2989132
  8. 10.1016/j.spmi.2004.03.043 · doi:10.1016/j.spmi.2004.03.043
  9. 10.1016/j.jnoncrysol.2005.11.065 · DOI
  10. Schrögmeier P, 2007, Proc. IEEE Symp. on VLSI Circuits, 186
  11. 10.1016/j.sse.2010.11.024 · DOI
  12. 10.1038/nature03190 · DOI · Paper page
  13. Yang B, 2008, J. Phys. D: Appl. Phys., 41
  14. Tappertzhofen S, 2012, Nanotechnology, 23, 10.1088/0957-4484/23/14/145703 · DOI
  15. 10.1002/smll.200901100 · DOI
  16. 10.1016/j.tsf.2009.09.021 · DOI
  17. 10.1063/1.3662013 · DOI
  18. 10.1039/c2nr30413a · DOI
  19. 10.1021/jz900375a · DOI
  20. Morales-Masis M, 2009, Nanotechnology, 20, 10.1088/0957-4484/20/9/095710 · DOI
  21. 10.1063/1.2431438 · doi:10.1063/1.2431438
  22. Tsuruoka T, 2011, Nanotechnology, 22
  23. Nayak A, 2011, Nanotechnology, 22, 10.1088/0957-4484/22/23/235201 · doi:10.1088/0957-4484/22/23/235201
  24. Liang X F, 2007, J. Phys. D: Appl. Phys., 40, 4767, 10.1088/0022-3727/40/16/004 · doi:10.1088/0022-3727/40/16/004
  25. 10.1109/LED.2009.2032566 · DOI · Paper page
  26. 10.1109/LED.2008.917109 · DOI
  27. 10.1002/adfm.201001520 · DOI
  28. 10.1143/APEX.2.061401 · DOI
  29. 10.1149/1.3160570 · DOI
  30. 10.1109/LED.2011.2177803 · DOI
  31. 10.1063/1.2825273 · DOI
  32. 10.1063/1.2712777 · DOI · Paper page
  33. 10.1016/S0022-3093(01)01068-7 · DOI
  34. 10.1002/pssr.201004086 · DOI
  35. 10.1109/TNANO.2011.2160557 · DOI
  36. 10.1016/j.jnoncrysol.2007.02.054 · DOI
  37. 10.1143/JJAP.51.04DD11 · DOI
  38. 10.1109/TNANO.2006.880407 · DOI · Paper page
  39. van den Hurk J, 2012, Thin Solid Films
  40. 10.1063/1.3631013 · DOI
  41. 10.1063/1.3176977 · DOI
  42. 10.1149/1.3339449 · DOI
  43. 10.1063/1.2772191 · DOI
  44. 10.1063/1.1600848 · doi:10.1063/1.1600848
  45. 10.1002/adma.201100507 · DOI · Paper page
  46. Tappertzhofen S, 2011, Mater. Res. Soc. Symp. Proc., 1330, 10.1557/opl.2011.1198 · doi:10.1557/opl.2011.1198
  47. 10.1063/1.3151822 · DOI · Paper page
  48. 10.1021/nn1010667 · DOI · Paper page
  49. 10.1002/adma.201201499 · DOI
  50. Kim S Nishi Y, 2007, 8th Annual Non-Volatile Memory Technology Symp., 76
  51. 10.1002/adma.201101800 · DOI
  52. 10.1016/0167-2738(94)00152-I · DOI
  53. 10.1149/1.1507597 · DOI · Paper page
  54. 10.1016/S0965-9773(97)00142-6 · DOI
  55. 10.1016/j.jnoncrysol.2005.09.051 · DOI
  56. 10.1002/adma.200900598 · DOI
  57. 10.1039/b300170a · DOI · Paper page
  58. 10.1038/nmat1513 · DOI · Paper page
  59. Tsuruoka T, 2010, Nanotechnology, 21, 10.1088/0957-4484/21/42/425205 · DOI · Paper page
  60. 10.1038/nmat3307 · DOI · Paper page
  61. 10.1063/1.3675870 · DOI
  62. 10.1002/adma.201104104 · DOI · Paper page
  63. 10.1103/PhysRevB.84.115310 · DOI
  64. 10.1002/adfm.201101846 · DOI · Paper page
  65. 10.1016/0040-6090(74)90296-X · DOI · Paper page
  66. 10.1002/9783527614936 · DOI · Paper page
  67. Milchev A, 2002, Electrocrystallization: Fundamentals of Nucleation and Growth
  68. 10.1063/1.3428779 · DOI
  69. 10.1063/1.3623485 · DOI
  70. Valov I, 2012, J. Solid State Electrochem.
  71. Bard A, 2001, Electrochemical Methods: Fundamentals and Applications
  72. 10.1109/LED.2011.2143691 · DOI
  73. 10.1063/1.3673239 · DOI · Paper page
  74. Choi S Ambrogio S Balatti S Nardi F Ielmini D, 2012, Proc. 4th IEEE Int. Memory Workshop (IMW), 1
  75. 10.1016/j.mee.2010.06.041 · DOI
  76. 10.1063/1.3672824 · DOI
  77. Zhirnov V V, 2011, Nanotechnology, 22, 10.1088/0957-4484/22/25/254027 · DOI
  78. 10.1109/JPROC.2010.2064271 · DOI
  79. Valov I, 2012, Adv. Mater.
  80. Liaw C, 2007, Selected Topics of Electronics and Micromechatronics
  81. 10.1109/JSSC.2007.897172 · DOI
  82. 10.1109/LED.2009.2024623 · DOI
  83. 10.1109/LED.2009.2016991 · DOI
  84. 10.1109/JPROC.2009.2035147 · DOI
  85. Symanczyk R Dittrich R Keller J Kund M Mueller G Ruf B Albarede P-H Bournat S Bouteille L Duch A, 2007, Proc. NVMTS, 71
  86. Aratani K, 2007, IEDM Techn. Digest, 2007, 783
  87. 10.1063/1.2903707 · DOI · Paper page
  88. Kamalanathan D, 2011, Nanotechnology, 22, 10.1088/0957-4484/22/25/254017 · DOI
  89. 10.1109/JSSC.2003.818147 · DOI
  90. 10.1007/s00339-011-6292-5 · DOI · Paper page
  91. 10.1038/nmat2748 · DOI · Paper page

Cited by

See all 198

Metadata

Authors
Valov, I., & Kozicki, M. N.
Venue
Journal of Physics D: Applied Physics
Publisher
IOP Publishing
Published
2013-02-01
Volume
46
Issue
7
Pages
074005
ISSN
  • 0022-3727 (ISSN-L)
  • 1361-6463
DOI
10.1088/0022-3727/46/7/074005
OpenAlex
W2000330909
Cited by
198
References
13
FWCI
15.98
Type
journal article
Language
en
Open access
closed
Licence

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Cation-based resistance change memory. https://app.cochat.ai/papers/10.1088/0022-3727/46/7/074005
The paper
Valov, I., & Kozicki, M. N. (2013). Cation-based resistance change memory. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/46/7/074005

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.