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Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

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Inoue, I. H., Yasuda, S., Akinaga, H., Takagi, H.·2008·Physical Review B

Abstract

Exotic features of a metal/oxide/metal sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as ${\mathrm{Fe}}_{2}{\mathrm{O}}_{3}$, $\mathrm{NiO}$, and $\mathrm{CoO}$. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off state and the other is a conductive on state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, nonvolatile threshold switching, and current-voltage duality. From the systematic sample-size dependence of the resistance in on and off states, we conclude that the resistance switching is due to the formation of ``electric faucet'' at the interface, which shows up as a homogeneous to inhomogeneous transition of the current distribution.

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Metadata

Authors
Inoue, I. H., Yasuda, S., Akinaga, H., & Takagi, H.
Venue
Physical Review B
Published
2008-01-03
Volume
77
Issue
3
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W1996441062
Cited by
252
References
1
FWCI
29.29
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution. https://app.cochat.ai/papers/10.1103/physrevb.77.035105
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Inoue, I. H., Yasuda, S., Akinaga, H., & Takagi, H. (2008). Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution. Physical Review B. https://doi.org/10.1103/physrevb.77.035105

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