The DOI matches its Crossref record; 55 of the 55 references it cites were found in a registry or an index.
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
Abstract
A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.
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Cites
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Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Silicon carbide color centers for quantum applications
Castelletto, S., & Boretti, A. (2020) · Journal of Physics: Photonics · doi:10.1088/2515-7647/ab77a2 · Cited by 317
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
A New Complete Condition Monitoring Method for SiC Power MOSFETs
Ugur, E., Xu, C., Yang, F., Pu, S., & Akin, B. (2021) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2020.2970668 · Cited by 126
Metadata
- Authors
- Liu, G., Tuttle, B. R., & Dhar, S.
- Venue
- Applied Physics Reviews
- Publisher
- AIP Publishing
- Published
- 2015-06-01
- Volume
- 2
- Issue
- 2
- ISSN
- 1931-9401 (ISSN-L)
- OpenAlex
- W645130925
- Cited by
- 292
- References
- 55
- FWCI
- 12.99
- Type
- journal article
- Language
- en
- Open access
- closed
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