A Fully Integrated Stimulator With High Stimulation Voltage Compliance Using Dynamic Bulk Biasing Technique in a Bulk CMOS Technology
Abstract
This paper presents a fully integrated stimulator using a dynamic bulk biasing technique and a dynamic control scheme in a 180-nm bulk CMOS technology. Unlike the conventional bulk biasing method, the bulk bias voltage is dynamically set according to the different stimulation phases. It avoids the underlying leakage current paths, and improves the maximum stimulation voltage compliance (MSVC). Together with dynamic bulk biasing scheme, a high voltage interface is designed to overcome the limitation of the breakdown voltage of the substrate diode ( V$_{\mathbf{BD}}$) between the high and low voltage domains. An all-NMOS dynamic charge pump is also proposed as a dynamic power supply above V$_{\mathbf{BD}}$and provides dynamic bulk-biasing voltages. Fabricated in a 180-nm standard CMOS technology, the stimulator achieves an MSVC of$\pm$16.5 V under a 3.3-V supply, and the achieved MSVC is$\sim$1.11 times higher than the V$_{\mathbf{BD}}$($\sim$14.8 V) of the substrate diode. The stimulator is also measured in a continuous output test mode for over 10 million cycles, the variation of$\vert$MSVC$\vert$is less than 200 mV.
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Dynamic bulk biasing techniques have been studied to enable a higher stimulator compliance voltage that is not limited by the diode breakdown level with the aid of charge pumps.
“In addition to the implementation of thick-oxide devices to achieve a fully isolated active output [140], [150], dynamic bulk biasing techniques have been studied to enable a higher stimulator compliance voltage [151] that is not limited by the diode breakdown level with the aid of charge pumps [152].”
From Active Neural Interface Circuits and Systems for Selective Control of Peripheral Nerves: A Review (2024) · cites this paper as [151]
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- Authors
- Zhou, Y., Wang, K., Yin, S., Li, W.-Y., Meng, F., Wang, Z.-G., & Ma, K.
- Affiliations
- Southeast University (CN)
- Tianjin University (CN)
- Institute of RF- and OE-ICs, Southeast University, Nanjing, China
- Venue
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Published
- 2024-06
- Volume
- 71
- Issue
- 6
- Pages
- 2525-2537
- ISSN
- 1549-8328 (ISSN-L)
- 1558-0806
- OpenAlex
- W4393139857
- Cited by
- 12
- References
- 41
- Citations by year
- 2026: 2 · 2025: 7 · 2024: 3
- FWCI
- 1.32
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
- Funders
- National Natural Science Funds of China (62371332, 61774035)
- Natural Science Foundation of Jiangsu Province (BK20191260)
- Tianjin University and the Agilic Joint Laboratory
- Topics
- Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
- Keywords
- bulk CMOS, leakage current
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