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Doping Dependence of the Raman Spectrum of Defected Graphene
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We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.
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Self-citation
Metadata
- Authors
- Bruna, M., Ott, A. K., Ijäs, M., Yoon, D., Sassi, U., & Ferrari, A. C.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-07-10
- Volume
- 8
- Issue
- 7
- Pages
- 7432-7441
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2118007461
- Cited by
- 391
- References
- 48
- FWCI
- 15.34
- Type
- journal article
- Language
- en
- Open access
- green
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